The Experts below are selected from a list of 12198 Experts worldwide ranked by ideXlab platform

Hong Liang - One of the best experts on this subject based on the ideXlab platform.

  • Chemical-Mechanical Polishing (CMP): a controlled tribocorrosion process
    Tribocorrosion of Passive Metals and Coatings, 2014
    Co-Authors: Milind Kulkarni, F. Gao, Hong Liang
    Abstract:

    Abstract: Chemical-Mechanical Polishing (CMP) is often associated with Chemical-Mechanical planarization which is a Polishing process assisted by Chemical reactions to remove surface materials. CMP is a standard manufacturing process practiced at the semiconductor industry to fabricate integrated circuits and memory disks. When the purpose is to remove surface materials, it is referred to as Chemical-Mechanical Polishing. However, when the purpose is to flatten a surface, it is referred to as Chemical-Mechanical planarization. CMP is considered to be a triboChemical process because of the synergy between friction and corrosion.

  • Lubricating behavior in Chemical–Mechanical Polishing of copper
    Scripta Materialia, 2002
    Co-Authors: Hong Liang
    Abstract:

    Abstract In this work, we simulated the Cu-Chemical–Mechanical Polishing (Cu-CMP) using a laboratory model system. By comparing with the classic lubrication study, a “Stribeck Curve” for CMP was generated. Results indicated that the hydrodynamic lubrication regime was never reached. Based on these results, we propose a contact-Polishing mode for CMP.

  • Wear‐Contact Problems and Modeling of Chemical Mechanical Polishing
    Journal of The Electrochemical Society, 1998
    Co-Authors: O. G. Chekina, Leon M. Keer, Hong Liang
    Abstract:

    Wafer shape and contact pressure evolution during Chemical Mechanical Polishing, and the characteristics of the steady-state regime are analyzed on the basis of approaches developed in contact mechanics. Nonplanarity caused by the geometrical nonuniformity (erosion) and by the presence of different material on the surface (recess) is considered. The possibility of the process optimization and the determination of system parameters based on the polished surface profiles is discussed.

  • wear contact problems and modeling of Chemical Mechanical Polishing
    Journal of The Electrochemical Society, 1998
    Co-Authors: O. G. Chekina, Leon M. Keer, Hong Liang
    Abstract:

    Wafer shape and contact pressure evolution during Chemical Mechanical Polishing, and the characteristics of the steady-state regime are analyzed on the basis of approaches developed in contact mechanics. Nonplanarity caused by the geometrical nonuniformity (erosion) and by the presence of different material on the surface (recess) is considered. The possibility of the process optimization and the determination of system parameters based on the polished surface profiles is discussed.

Jung-hoon Chun - One of the best experts on this subject based on the ideXlab platform.

  • Scratching by pad asperities in Chemical–Mechanical Polishing
    Cirp Annals-manufacturing Technology, 2010
    Co-Authors: Nannaji Saka, T Eusner, Jung-hoon Chun
    Abstract:

    In the fabrication of micro- and nano-scale semiconductor devices and electroMechanical systems, the Chemical–Mechanical Polishing (CMP) process is extensively employed. During the CMP process, undesirable scratches are produced on metal-interconnect and low-k-dielectric surfaces by the softer pad asperities. This paper presents contact mechanics models for the initiation of scratching in terms of the pad asperity geometry, the interfacial friction, and the Mechanical properties of materials. Results of dry, wet and lubricated experiments on Cu coatings qualitatively validate the theoretical models. To mitigate scratching by pad asperities during CMP, the developed models suggest that the friction coefficient be kept below 0.2.

  • nano scale scratching in Chemical Mechanical Polishing
    Cirp Annals-manufacturing Technology, 2008
    Co-Authors: Nannaji Saka, T Eusner, Jung-hoon Chun
    Abstract:

    Abstract During Chemical–Mechanical Polishing (CMP) in the fabrication of advanced semiconductor devices, undesirable nano-scale scratches are produced, especially in the presence of low-k dielectrics. In this paper, the lower- and upper-bound loads for scratching are estimated by contact mechanics models and are validated by AFM experiments. Additionally, the width and depth of scratches are related to such process parameters as: particle size, abrasive volume fraction, Mechanical and geometric properties of the pad and surface coatings, and Polishing pressure. The upper-limit for scratch width is found to be a function of the particle size and the hardnesses of the coatings and the pad. In Cu CMP this limit is about one-fifth of the abrasive diameter.

  • Mechanics, mechanisms, and modeling of the Chemical Mechanical Polishing process
    2001
    Co-Authors: Kyungyoon Noh, Jiun-yu Lai, Nannaji Saka, Jung-hoon Chun
    Abstract:

    The Chemical Mechanical Polishing (CMP) process is now widely employed in the Integrated Circuit Fabrication. However, due to the complexity of process parameters on the material removal rate (MRR), mechanism of material removal and pattern effect are not well understood. In this paper, three contact regimes between the wafer surface and the Polishing pad were proposed: direct contact, mixed or partial contact, and hydroplaning. The interfacial friction force has been employed to characterize these contact conditions. Several Polishing models are reviewed with emphasis on the Mechanical aspects of CMP. Experiments have been conducted to verify the Mechanical Polishing models and to identify the dominant mechanism of material removal under typical CMP conditions. Keywords—Chemical Mechanical Polishing, Process Control, Semiconductor Manufacturing, Integrated

Michael L Eyman - One of the best experts on this subject based on the ideXlab platform.

  • tribology analysis of Chemical Mechanical Polishing
    Journal of The Electrochemical Society, 1994
    Co-Authors: Scott R Runnels, Michael L Eyman
    Abstract:

    To better understand the variation of material removal rate on a wafer during Chemical-Mechanical Polishing (CMP), knowledge of the stress distribution on the wafer surface is required. The difference in wafer-surface stress distributions could be considerable depending on whether or not the wafer hydroplanes during Polishing. This study analyzes the fluid film between the wafer and pad and demonstrates that hydroplaning is possible for standard CMP processes. The importance of wafer curvature, slurry viscosity, and rotation speed on the thickness of the fluid film is also demonstrated.

Steven Danyluk - One of the best experts on this subject based on the ideXlab platform.

  • Mechanical Mechanisms of Chemical Mechanical Polishing
    Advanced Materials Research, 2008
    Co-Authors: Steven Danyluk, Sum Huan Ng
    Abstract:

    This paper describes a Mechanical mechanism of Chemical Mechanical Polishing (CMP) and the model is applied to the Polishing of silicon substrates by polyurethane pads and slurries containing fumed silica as is typically done in the manufacture of integrated circuits. The model utilizes the concept that the Polishing pad surface contains asperities that support the normal load on the wafer, and that friction and hydrodynamic forces influence wear. The interfacial fluid pressure can significantly influence the normal pressures on the wafers and its effects modify the wear rate predictions.

  • An Analysis of Mixed Lubrication in Chemical Mechanical Polishing
    Journal of Tribology-transactions of The Asme, 2005
    Co-Authors: C. Fred Higgs, Inho Yoon, Steven Danyluk
    Abstract:

    Pressure and shear flow factors (Patir and Cheng, 1978) were used to take into account the roughness of the pad surface in the modeling of the interfacial fluid pressure during Chemical Mechanical Polishing. An attempt was made to explain the physical meaning of the flow factors in this particular application. Additionally, a parametric study was carried out to see the effect on the model after the incorporation of the flow factors. The pressure and shear flow factors were found to have a competing effect on the magnitude of the sub-ambient fluid pressure.

  • Effect of electric field on Chemical Mechanical Polishing of langasite
    Wear, 2001
    Co-Authors: Dae Soon Lim, Inho Yoon, Steven Danyluk
    Abstract:

    Abstract The effect of dc electric fields on material removal rates of single crystal langasite during the Chemical Mechanical Polishing process was investigated. The removal rate of the langasite in the commercial silica slurry was increased by up to 30% with a dc electric field ranging from −300 to +300 V/mm. The motion of slurry particles by surface charge was responsible for the electrical field-assisted Chemical Mechanical Polishing (EFACMP) of langasite observed in this study. The effect of electric fields on Chemical Mechanical Polishing is explained by the variation of the particle concentration due to the attraction to either the langasite surface or the pad by surface charge. The variation of the slurry particles near the langasite surface due to the electric field was confirmed experimentally by hardness variation in the slurry.

  • contact mechanics and lubrication hydrodynamics of Chemical Mechanical Polishing
    Journal of The Electrochemical Society, 1999
    Co-Authors: John A Tichy, Joseph A Levert, Lei Shan, Steven Danyluk
    Abstract:

    A preliminary model for the contact mechanics and fluid mechanics of the Chemical Mechanical Polishing process is presented. Only the basic equations of elastic contact surface mechanics and hydrodynamic lubrication are required. Although the model is highly idealized, no ad hoc assumptions or adjustable parameters are required. Some new experimental results are presented, reinforcing the counterintuitive experimental determination of suction fluid pressure below the pad. The model correctly predicts the magnitude of the suction pressure and the effect of load, speed, and roughness.

  • contact mechanics and lubrication hydrodynamics of Chemical Mechanical Polishing
    Journal of The Electrochemical Society, 1999
    Co-Authors: John A Tichy, Joseph A Levert, Lei Shan, Steven Danyluk
    Abstract:

    A preliminary model for the contact mechanics and fluid mechanics of the Chemical Mechanical Polishing process is presented. Only the basic equations of elastic contact surface mechanics and hydrodynamic lubrication are required. Although the model is highly idealized, no ad hoc assumptions or adjustable parameters are required. Some new experimental results are presented, reinforcing the counterintuitive experimental determination of suction fluid pressure below the pad. The model correctly predicts the magnitude of the suction pressure and the effect of load, speed, and roughness. © 1999 The ElectroChemical Society. All rights reserved.

O. G. Chekina - One of the best experts on this subject based on the ideXlab platform.

  • Wear‐Contact Problems and Modeling of Chemical Mechanical Polishing
    Journal of The Electrochemical Society, 1998
    Co-Authors: O. G. Chekina, Leon M. Keer, Hong Liang
    Abstract:

    Wafer shape and contact pressure evolution during Chemical Mechanical Polishing, and the characteristics of the steady-state regime are analyzed on the basis of approaches developed in contact mechanics. Nonplanarity caused by the geometrical nonuniformity (erosion) and by the presence of different material on the surface (recess) is considered. The possibility of the process optimization and the determination of system parameters based on the polished surface profiles is discussed.

  • wear contact problems and modeling of Chemical Mechanical Polishing
    Journal of The Electrochemical Society, 1998
    Co-Authors: O. G. Chekina, Leon M. Keer, Hong Liang
    Abstract:

    Wafer shape and contact pressure evolution during Chemical Mechanical Polishing, and the characteristics of the steady-state regime are analyzed on the basis of approaches developed in contact mechanics. Nonplanarity caused by the geometrical nonuniformity (erosion) and by the presence of different material on the surface (recess) is considered. The possibility of the process optimization and the determination of system parameters based on the polished surface profiles is discussed.