The Experts below are selected from a list of 306 Experts worldwide ranked by ideXlab platform

Stig Munk-nielsen - One of the best experts on this subject based on the ideXlab platform.

  • Reliability Improvement of Power Converters by Means of Condition Monitoring of IGBT Modules
    IEEE Transactions on Power Electronics, 2017
    Co-Authors: Ui-min Choi, Stig Munk-nielsen, Frede Blaabjerg, Soren Jorgensen, Bjørn Rannestad
    Abstract:

    Power electronic systems have gradually gained an important status in a wide range of industrial applications such as renewable generation, motor drives, automotive, and railway transportation. Accordingly, recent research makes an effort to improve the reliability of power electronic systems to comply with more stringent constraints on safety, cost, and availability. The power devices are one of the most reliability-critical components in power electronic systems. Therefore, its condition monitoring plays an important role to improve the reliability of power electronic systems. This paper proposes a condition monitoring method of insulated-gate bipolar transistor (IGBT) modules. In the first section of this paper, a structure of a conventional IGBT module and a related parameter for the condition monitoring are explained. Then, a proposed real-time on-state Collector–Emitter Voltage measurement circuit and condition monitoring strategies under different operating conditions are described. Finally, experimental results confirm the feasibility and effectiveness of the proposed method.

  • Experimental Evaluation of IGBT Junction Temperature Measurement via a Modified-VCE (VCE_VGE) Method with Series Resistance Removal
    2016
    Co-Authors: Nick Baker, Stig Munk-nielsen, Francesco Iannuzzo, Laurent Dupont, Yvan Avenas
    Abstract:

    Temperature sensitive electrical parameters (TSEPs) allow junction temperature measurements on power semiconductors without modification to module packaging. The on-state Collector-Emitter Voltage (VCE) in IGBTs is an attractive option for junction temperature measurement since it is relatively easy to measure during operation. Nevertheless, the resistive contribution of interconnection and packaging materials has been shown to introduce large errors when using the VCE for junction temperature measurement. This paper uses an IR camera to experimentally evaluate a modified-VCE method designed to remove this series resistance contribution. This method can be described as the difference in VCE at two different gate Voltages (15V and 13V). Experimental validation focuses primarily on the accuracy of the temperature measurement and investigates paralleled chip configurations as well as multiple devices with differing geometry and manufacturer. The modified-VCE shows significant improvement over the normal-VCE in terms of correlation to mean junction temperature, with maximum errors typically below 10°C. These results are additionally compared with one traditional and robust TSEP: the Voltage drop under low current injection.

  • Novel screening techniques for wind turbine power converters
    2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), 2016
    Co-Authors: Asger Bjorn Jorgensen, Stig Munk-nielsen, Simon Dyhr Sonderskov, Nicklas Christensen, K. L. Frederiksen, E. Iciragiye, A. E. Maarbjerg, Bjørn Rannestad
    Abstract:

    Power converters represent one of the highest failure rates in the wind turbine. Therefore converter manufacturers perform burn-in tests to prevent shipping of faulty converters. Recent developments in junction temperature estimation, based on accurate online IGBT Collector-Emitter Voltage measurements, allow for thermal stress estimation of the IGBT modules. This is utilized to detect infant mortalities in power converters, by comparing thermal responses of IGBTs for faulty and non-faulty converters. The method proves to be a time and cost efficient candidate to replace burn-in tests of power converters for wind turbines applications.

  • Condition monitoring of IGBT module for reliability improvement of power converters
    2016 IEEE Transportation Electrification Conference and Expo Asia-Pacific (ITEC Asia-Pacific), 2016
    Co-Authors: Ui-min Choi, Stig Munk-nielsen, Frede Blaabjerg, Soren Jorgensen, Bjørn Rannestad
    Abstract:

    Power electronic systems have gradually gained an important status in a wide range of industrial applications such as automotive, motor drives, railway transportation and renewable generation. Accordingly, recent research makes an effort to improve the reliability of power electronic systems to comply with more stringent constraints on safety, cost and availability. The power devices are the one of the most reliability-critical components in power electronic systems. Therefore, its condition monitoring plays an important role to improve the reliability of power electronic systems. This paper proposes a condition monitoring method of an IGBT module. In the first section of this paper, the structure of a conventional IGBT module and related parameter for the condition monitoring are explained. Then, an intelligent on-state Collector-Emitter Voltage measurement circuit and condition monitoring strategies depending on converter operating conditions are described. Finally, experimental results confirm the feasibility and effectiveness of the proposed method.

  • On-state Voltage drop based derating/uprating on a MW converter to improve reliability
    Microelectronics Reliability, 2016
    Co-Authors: Pramod Ghimire, Ionut Trintis, Stig Munk-nielsen, Bjørn Rannestad
    Abstract:

    Abstract Power semiconductor devices are the most fragile components limiting reliability of power converters, where major stresses are temperature dependent parameters. Typically, the operating virtual maximum junction temperature is specified by a manufacturer for each individual device. The thermal system and operating load are designed based on this number. Online monitoring of an on-state Collector–Emitter Voltage (υce,on) and a junction temperature is necessary to ensure the design performance within a safe limit and also to make this method applicable for derating/uprating power. This paper presents the real time measurement of υce,on and thereby the junction temperature estimation in high power converters. Knowing these parameters online, the maximum power capability can be detected. The operating maximum junction temperature is selected and thereby based on the operating condition the derating of power is shown for a megawatt (MW) converter. An experimental setup including online monitoring is described and the measurement of power derating is presented at the specified conditions.

Bjørn Rannestad - One of the best experts on this subject based on the ideXlab platform.

  • Reliability Improvement of Power Converters by Means of Condition Monitoring of IGBT Modules
    IEEE Transactions on Power Electronics, 2017
    Co-Authors: Ui-min Choi, Stig Munk-nielsen, Frede Blaabjerg, Soren Jorgensen, Bjørn Rannestad
    Abstract:

    Power electronic systems have gradually gained an important status in a wide range of industrial applications such as renewable generation, motor drives, automotive, and railway transportation. Accordingly, recent research makes an effort to improve the reliability of power electronic systems to comply with more stringent constraints on safety, cost, and availability. The power devices are one of the most reliability-critical components in power electronic systems. Therefore, its condition monitoring plays an important role to improve the reliability of power electronic systems. This paper proposes a condition monitoring method of insulated-gate bipolar transistor (IGBT) modules. In the first section of this paper, a structure of a conventional IGBT module and a related parameter for the condition monitoring are explained. Then, a proposed real-time on-state Collector–Emitter Voltage measurement circuit and condition monitoring strategies under different operating conditions are described. Finally, experimental results confirm the feasibility and effectiveness of the proposed method.

  • Novel screening techniques for wind turbine power converters
    2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), 2016
    Co-Authors: Asger Bjorn Jorgensen, Stig Munk-nielsen, Simon Dyhr Sonderskov, Nicklas Christensen, K. L. Frederiksen, E. Iciragiye, A. E. Maarbjerg, Bjørn Rannestad
    Abstract:

    Power converters represent one of the highest failure rates in the wind turbine. Therefore converter manufacturers perform burn-in tests to prevent shipping of faulty converters. Recent developments in junction temperature estimation, based on accurate online IGBT Collector-Emitter Voltage measurements, allow for thermal stress estimation of the IGBT modules. This is utilized to detect infant mortalities in power converters, by comparing thermal responses of IGBTs for faulty and non-faulty converters. The method proves to be a time and cost efficient candidate to replace burn-in tests of power converters for wind turbines applications.

  • Condition monitoring of IGBT module for reliability improvement of power converters
    2016 IEEE Transportation Electrification Conference and Expo Asia-Pacific (ITEC Asia-Pacific), 2016
    Co-Authors: Ui-min Choi, Stig Munk-nielsen, Frede Blaabjerg, Soren Jorgensen, Bjørn Rannestad
    Abstract:

    Power electronic systems have gradually gained an important status in a wide range of industrial applications such as automotive, motor drives, railway transportation and renewable generation. Accordingly, recent research makes an effort to improve the reliability of power electronic systems to comply with more stringent constraints on safety, cost and availability. The power devices are the one of the most reliability-critical components in power electronic systems. Therefore, its condition monitoring plays an important role to improve the reliability of power electronic systems. This paper proposes a condition monitoring method of an IGBT module. In the first section of this paper, the structure of a conventional IGBT module and related parameter for the condition monitoring are explained. Then, an intelligent on-state Collector-Emitter Voltage measurement circuit and condition monitoring strategies depending on converter operating conditions are described. Finally, experimental results confirm the feasibility and effectiveness of the proposed method.

  • On-state Voltage drop based derating/uprating on a MW converter to improve reliability
    Microelectronics Reliability, 2016
    Co-Authors: Pramod Ghimire, Ionut Trintis, Stig Munk-nielsen, Bjørn Rannestad
    Abstract:

    Abstract Power semiconductor devices are the most fragile components limiting reliability of power converters, where major stresses are temperature dependent parameters. Typically, the operating virtual maximum junction temperature is specified by a manufacturer for each individual device. The thermal system and operating load are designed based on this number. Online monitoring of an on-state Collector–Emitter Voltage (υce,on) and a junction temperature is necessary to ensure the design performance within a safe limit and also to make this method applicable for derating/uprating power. This paper presents the real time measurement of υce,on and thereby the junction temperature estimation in high power converters. Knowing these parameters online, the maximum power capability can be detected. The operating maximum junction temperature is selected and thereby based on the operating condition the derating of power is shown for a megawatt (MW) converter. An experimental setup including online monitoring is described and the measurement of power derating is presented at the specified conditions.

  • Online chip temperature monitoring using υ ce -load current and IR thermography
    2015 IEEE Energy Conversion Congress and Exposition (ECCE), 2015
    Co-Authors: Pramod Ghimire, Kristian Bonderup Pedersen, Ionut Trintis, Bjørn Rannestad, Stig Munk-nielsen
    Abstract:

    This paper presents on-state Collector-Emitter Voltage (υ ce, on )-load current (I c ) method to monitor chip temperature on power insulated gate bipolar transistor (IGBT) modules in converter operation. The measurement method is also evaluated using infrared (IR) thermography. Temperature dependencies of υ ce, on at load current is measured and temperature dependency calibration factor is formulated. This method needs a correction to compensate a deviation in the interconnection resistance from homogeneous temperature field in calibration to non-homogeneous field in loading. The correction parameter is obtained from a static calibration and the method is proposed in the paper. Ageing compensation in estimating the temperature is illustrated. The correction parameter is also analysed in finite element model and also investigated experimentally superimposing heat by conducting device for a longer time in the calibration.

Sandeep Anand - One of the best experts on this subject based on the ideXlab platform.

  • ICIT - Error Analysis of An Accurate Bipolar Voltage Measurement Circuit for Online Health Monitoring of IGBTs
    2019 IEEE International Conference on Industrial Technology (ICIT), 2019
    Co-Authors: Pratik Diwakar Deshmukh, Abhinav Arya, Sandeep Anand
    Abstract:

    On-state Voltage is predominantly used in the health monitoring of the IGBT. In this paper, fast, accurate and online on-state Voltage measurement circuit is suggested for an IGBT. The circuit is capable of measuring positive on-state Collector-Emitter Voltage (V CE–ON ) and negative forward Voltage (V F ) of anti-parallel diode. The measurement circuit offers the scaling/shifting of the on-state Voltage, which facilitates direct connection of Analog to Digital (ADC), to monitor the Voltage in digital controllers. The key advantage of the suggested circuit is that the overall measurement error is about ± 0.111%, which is below the allowable error limits (± 0.33%) for condition monitoring of the IGBT. A flexible Voltage clamping is provided, during OFF state of device, to minimize the error in the measurement. Different possible errors in the measurement are due to, i) resistor mismatch, ii) diode Voltages mismatch, and iii) ADC quantisation and opamp. The detailed analysis of the mentioned errors is presented in this paper. Simulation and experimental validation of suggested circuit is carried out and results are also compared with previously reported measurement circuits.

  • Evaluation of Vce at inflection point for monitoring bond wire degradation in discrete packaged IGBTs
    IEEE Transactions on Power Electronics, 2017
    Co-Authors: Arun Singh, Anup Anurag, Sandeep Anand
    Abstract:

    A novel scheme is proposed for online condition monitoring of bond wires present in insulated gate bipolar transistor (IGBT) package. The proposed method detects bond wire degradation using on-state Collector Emitter Voltage at the inflection point. Previously reported condition monitoring methods based on on-state Collector-Emitter Voltage as a precursor of aging require an accurate knowledge of junction temperature which is difficult to measure online during an inverter operation. The key advantage of the proposed scheme is that it monitors the bond wire degradation irrespective of the junction temperature. Therefore, this technique is not affected by increase in junction temperature due to die attach degradation or change in ambient temperature. The proposed scheme is verified experimentally under realistic operating conditions.

Ali Ibrahim - One of the best experts on this subject based on the ideXlab platform.

  • Wire-bond Contact Degradation Modelling for Remaining Useful Lifetime Prognosis of IGBT Power Modules
    2020
    Co-Authors: M Nazar, Ali Ibrahim, Zoubir Khatir, Nicolas Degrenne, Z Al-masry
    Abstract:

    Power electronic modules undergo electro-thermal stresses due to power losses that lead to several kinds of degradations, and finally to failure. In order to prevent power electronic modules failure, one should assess its reliability in real-time operation. For this purpose, Prognostics and Health Management (PHM) approach could be a promising tool for reliability evaluation. In this paper, we propose an analytical model that describes the metallization to wire-bond contact degradation, which is a main cause that leads the IGBT power module to fail. The usual aging indicator of such damages is the Collector-Emitter Voltage (V_CE) that increases with degradation. The analytical model is related to this indicator and it is based on the contact resistance theory and constriction current lines. The proposed model is hence used to build a prognostic model for estimating the remaining useful lifetime (RUL) of IGBT power modules. The prognostic model is illustrated using aging data coming from accelerated power cycling tests with different stress conditions. Results show a prognostic capability.

  • Using of bond-wire resistance as aging indicator of semiconductor power modules
    Microelectronics Reliability, 2020
    Co-Authors: Ali Ibrahim, Zoubir Khatir, J. P. Ousten, Richard Lallemand, Nicolas Degrenne, Stefan Mollov, D. Ingrosso
    Abstract:

    Abstract This paper investigates the use of wire—bonds contact resistance as indicator to diagnose the health state of power electronics modules. This technique is especially dedicated to monitoring the degradation of the topside interconnection (metallization-wire bonds) when the module is wired with a Kelvin point. One advantage of this indicator is that it can be followed online, without being disturbed by current or Voltage, to diagnose the state of health and, possibly, the prognosis of the remaining lifetime of the power module by associating it with a lifetime model. For this purpose, based on power-cycling tests in different conditions, a comparison between this indicator and the one commonly used, i.e. the Collector-Emitter Voltage Vce, shows that the first one is much more sensitive to the degradations, easier to use online and finally should be more suitable for lifetime prognosis.

  • Wire-bond contact degradation modeling for remaining useful lifetime prognosis of IGBT power modules
    Microelectronics Reliability, 2020
    Co-Authors: M Nazar, Ali Ibrahim, Zoubir Khatir, Nicolas Degrenne, Z Al-masry
    Abstract:

    Reliability of power electronic equipment can be enhanced with the ability to predict its health state to avoid damage and permit making necessary maintenance. In this paper, an analytical physics of failure model is built that describes the contact resistance between wire-bonds and pad-metallization in an IGBT semiconductor device. On one hand, this model is based on the theory of the electrical contact resistance and the other hand on the spread of the current from the contact to the aluminum film. When contact degradations occur, the model can relate the crack propagation in the wire-bond interconnection to the Collector-Emitter Voltage (VCE) and may allow identifying the health of the device. If the Voltage is measured during actual operation, the length of the contact radius can be estimated and crack propagation rate can be calculated and used to predict the remaining useful life. The approach is tested with experimental accelerated aging tests.

  • Constant ΔTj Power Cycling Strategy in DC Mode for Top-Metal and Bond-Wire Contacts Degradation Investigations
    IEEE Transactions on Power Electronics, 2019
    Co-Authors: Son-ha Tran, Ali Ibrahim, Zoubir Khatir, Richard Lallemand, Jean Pierre Ousten, Jeffrey Ewanchuk, Stefan V Mollov
    Abstract:

    The study of the impact of junction temperature swings ("Tj) on degradation mechanisms during power cycling tests (PCTs) requires both a control of the applied thermal stress and a separation of degradation modes. The first requirement can be obtained by using a "constant "Tj" power cycling strategy that allows to minimize the cross-interactions between the influencing factors. The second one is made by using a dedicated power module well-suited for targeting only the chips top-side degradations (metallization and bond wire contacts). In this paper, a constant "Tj strategy by gate Voltage regulation is performed for power cycling tests in DC-mode. The tested modules are ideally designed for top-metal and bond-wire contacts degradation investigations. From ageing indicator on the Collector-Emitter Voltage (VCE), the results clearly show that three regimes of degradation occur systematically at the IGBT chips top-side, whatever the stress conditions. Moreover, comparative results in 'constant "Tj' and conventional 'constant "I' PCT strategies have shown that the feedback between stresses and damages encountered in the second strategy is more important for low "Tj values than for high "Tj values. In addition, results show that in case of high stresses, the 'constant "Tj' strategy with Vge regulation, gives values close to a 'constant "I' strategy but that the extrapolation towards low values of "Tj can be questionable for the 'constant "Tj' strategy.

Zoubir Khatir - One of the best experts on this subject based on the ideXlab platform.

  • Wire-bond Contact Degradation Modelling for Remaining Useful Lifetime Prognosis of IGBT Power Modules
    2020
    Co-Authors: M Nazar, Ali Ibrahim, Zoubir Khatir, Nicolas Degrenne, Z Al-masry
    Abstract:

    Power electronic modules undergo electro-thermal stresses due to power losses that lead to several kinds of degradations, and finally to failure. In order to prevent power electronic modules failure, one should assess its reliability in real-time operation. For this purpose, Prognostics and Health Management (PHM) approach could be a promising tool for reliability evaluation. In this paper, we propose an analytical model that describes the metallization to wire-bond contact degradation, which is a main cause that leads the IGBT power module to fail. The usual aging indicator of such damages is the Collector-Emitter Voltage (V_CE) that increases with degradation. The analytical model is related to this indicator and it is based on the contact resistance theory and constriction current lines. The proposed model is hence used to build a prognostic model for estimating the remaining useful lifetime (RUL) of IGBT power modules. The prognostic model is illustrated using aging data coming from accelerated power cycling tests with different stress conditions. Results show a prognostic capability.

  • Using of bond-wire resistance as aging indicator of semiconductor power modules
    Microelectronics Reliability, 2020
    Co-Authors: Ali Ibrahim, Zoubir Khatir, J. P. Ousten, Richard Lallemand, Nicolas Degrenne, Stefan Mollov, D. Ingrosso
    Abstract:

    Abstract This paper investigates the use of wire—bonds contact resistance as indicator to diagnose the health state of power electronics modules. This technique is especially dedicated to monitoring the degradation of the topside interconnection (metallization-wire bonds) when the module is wired with a Kelvin point. One advantage of this indicator is that it can be followed online, without being disturbed by current or Voltage, to diagnose the state of health and, possibly, the prognosis of the remaining lifetime of the power module by associating it with a lifetime model. For this purpose, based on power-cycling tests in different conditions, a comparison between this indicator and the one commonly used, i.e. the Collector-Emitter Voltage Vce, shows that the first one is much more sensitive to the degradations, easier to use online and finally should be more suitable for lifetime prognosis.

  • Wire-bond contact degradation modeling for remaining useful lifetime prognosis of IGBT power modules
    Microelectronics Reliability, 2020
    Co-Authors: M Nazar, Ali Ibrahim, Zoubir Khatir, Nicolas Degrenne, Z Al-masry
    Abstract:

    Reliability of power electronic equipment can be enhanced with the ability to predict its health state to avoid damage and permit making necessary maintenance. In this paper, an analytical physics of failure model is built that describes the contact resistance between wire-bonds and pad-metallization in an IGBT semiconductor device. On one hand, this model is based on the theory of the electrical contact resistance and the other hand on the spread of the current from the contact to the aluminum film. When contact degradations occur, the model can relate the crack propagation in the wire-bond interconnection to the Collector-Emitter Voltage (VCE) and may allow identifying the health of the device. If the Voltage is measured during actual operation, the length of the contact radius can be estimated and crack propagation rate can be calculated and used to predict the remaining useful life. The approach is tested with experimental accelerated aging tests.

  • Constant ΔTj Power Cycling Strategy in DC Mode for Top-Metal and Bond-Wire Contacts Degradation Investigations
    IEEE Transactions on Power Electronics, 2019
    Co-Authors: Son-ha Tran, Ali Ibrahim, Zoubir Khatir, Richard Lallemand, Jean Pierre Ousten, Jeffrey Ewanchuk, Stefan V Mollov
    Abstract:

    The study of the impact of junction temperature swings ("Tj) on degradation mechanisms during power cycling tests (PCTs) requires both a control of the applied thermal stress and a separation of degradation modes. The first requirement can be obtained by using a "constant "Tj" power cycling strategy that allows to minimize the cross-interactions between the influencing factors. The second one is made by using a dedicated power module well-suited for targeting only the chips top-side degradations (metallization and bond wire contacts). In this paper, a constant "Tj strategy by gate Voltage regulation is performed for power cycling tests in DC-mode. The tested modules are ideally designed for top-metal and bond-wire contacts degradation investigations. From ageing indicator on the Collector-Emitter Voltage (VCE), the results clearly show that three regimes of degradation occur systematically at the IGBT chips top-side, whatever the stress conditions. Moreover, comparative results in 'constant "Tj' and conventional 'constant "I' PCT strategies have shown that the feedback between stresses and damages encountered in the second strategy is more important for low "Tj values than for high "Tj values. In addition, results show that in case of high stresses, the 'constant "Tj' strategy with Vge regulation, gives values close to a 'constant "I' strategy but that the extrapolation towards low values of "Tj can be questionable for the 'constant "Tj' strategy.