The Experts below are selected from a list of 210414 Experts worldwide ranked by ideXlab platform
Haesuk Jung - One of the best experts on this subject based on the ideXlab platform.
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determination of local bonding Configuration and structural modification in amorphous carbon with silicon incorporation
Diamond and Related Materials, 2003Co-Authors: Haesuk JungAbstract:Abstract The bonding Configuration and structural evolution of Si-incorporated amorphous carbon (a-C:Si x ) films were studied. The incorporation of Si to amorphous carbon (a-C) has the advantageous effect of promoting sp 3 hybridized bond formation and improving the thermal stability. The composition, bonding Configuration, Structure and electrical properties of a-C:Si x were investigated as a function of Si concentration. For Si concentration below 10 at.%, incorporated Si substituted for sp 2 C-bonded clusters and the electrical resistivity of a-C:Si x increased significantly. From 10 to 23 at.%, the fraction of sp 3 bonds and the residual stress increased with Si concentration. However, when increasing Si concentration above 23 at.%, it is observed that the contribution of Si-4C bonds increased and residual stress and resistivity of a-C:Si x decreased. From the above results, different structural and bonding characteristics of a-C:Si x were established and this transition of structural evolution is closely related to the incorporated Si content in film.
Lijun Luan - One of the best experts on this subject based on the ideXlab platform.
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solution growth of in doped cdmnte crystals by the vertical bridgman method with the acrt technique
Journal of Crystal Growth, 2012Co-Authors: Wanqi Jie, Tao Wang, Xin Zheng, Lijun LuanAbstract:Abstract Cd 1− x Mn x Te (CdMnTe) crystals were grown by the solution technique using Te as a solvent and the growth was performed in a vertical Bridgman arrangement with the accelerated crucible rotation technique (ACRT). Ingot in the diameter of 30 mm and length of 60 mm was obtained. As-grown crystals showed a resistivity of 2.065×10 10 Ω cm and mobility life time product of electrons of 1.61×10 −3 cm 2 V −1 . PL spectrum and IR transmittance measurements revealed that the as-grown CdMnTe possessed high crystalline quality. A CdMnTe detector was fabricated with planar Configuration Structure, which showed a resolution of 12.51% of the 241 Am at 59.5 keV peak. In conclusion, the Te solution vertical Bridgman technique was proved to be a practical way to effectively reduce the twins in CdMnTe crystal and to produce high quality detector-grade CdMnTe crystal with good spectroscopic performance.
Tao Wang - One of the best experts on this subject based on the ideXlab platform.
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solution growth of in doped cdmnte crystals by the vertical bridgman method with the acrt technique
Journal of Crystal Growth, 2012Co-Authors: Wanqi Jie, Tao Wang, Xin Zheng, Lijun LuanAbstract:Abstract Cd 1− x Mn x Te (CdMnTe) crystals were grown by the solution technique using Te as a solvent and the growth was performed in a vertical Bridgman arrangement with the accelerated crucible rotation technique (ACRT). Ingot in the diameter of 30 mm and length of 60 mm was obtained. As-grown crystals showed a resistivity of 2.065×10 10 Ω cm and mobility life time product of electrons of 1.61×10 −3 cm 2 V −1 . PL spectrum and IR transmittance measurements revealed that the as-grown CdMnTe possessed high crystalline quality. A CdMnTe detector was fabricated with planar Configuration Structure, which showed a resolution of 12.51% of the 241 Am at 59.5 keV peak. In conclusion, the Te solution vertical Bridgman technique was proved to be a practical way to effectively reduce the twins in CdMnTe crystal and to produce high quality detector-grade CdMnTe crystal with good spectroscopic performance.
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vertical bridgman growth and characterization of cdmnte crystals for gamma ray radiation detector
Journal of Crystal Growth, 2011Co-Authors: Yuanyuan Du, Tao Wang, Yadong Xu, Pengfei YuAbstract:CdMnTe (CMT) has been recently considered to be a good candidate as a promising material for the manufacture of room-temperature nuclear radiation detectors due to its better lattice strengthening, wider band gap energy and low segregation potential. This paper reports the recent progress of detector-grade CMT crystals in Northwestern Polytechnical University. CdMnTe:In ingots with diameter of 30 mm were grown using a Modified Vertical Bridgman (MVB) method. Current-voltage measurements were performed on single element planar Configuration Structure with Au electrode and the obtained resistivity of CMT samples was up to 6.19 x 10 10 Ω cm. PL spectra and IR transmittance measurement on the samples were revealed that the as-grown CMT crystal possess of high quality. IR microscope showed that the Te inclusions in CMT are 10-20 μm in diameter and within the range 1 × 10 4 ―3 × 10 4 cm ―3 in concentration. The 241 Am gamma-ray spectral was obtained for the CMT single planar detector with the energy resolution of 12.38% of the 59.5 keV peak. The mobility-lifetime products for the electron and hole of the as-grown CMT crystals were evaluated to be 1.22 x 10- 3 cm 2 V ―1 and 3.0 x 10 ―5 cm 2 V ―1 , respectively.
Wanqi Jie - One of the best experts on this subject based on the ideXlab platform.
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solution growth of in doped cdmnte crystals by the vertical bridgman method with the acrt technique
Journal of Crystal Growth, 2012Co-Authors: Wanqi Jie, Tao Wang, Xin Zheng, Lijun LuanAbstract:Abstract Cd 1− x Mn x Te (CdMnTe) crystals were grown by the solution technique using Te as a solvent and the growth was performed in a vertical Bridgman arrangement with the accelerated crucible rotation technique (ACRT). Ingot in the diameter of 30 mm and length of 60 mm was obtained. As-grown crystals showed a resistivity of 2.065×10 10 Ω cm and mobility life time product of electrons of 1.61×10 −3 cm 2 V −1 . PL spectrum and IR transmittance measurements revealed that the as-grown CdMnTe possessed high crystalline quality. A CdMnTe detector was fabricated with planar Configuration Structure, which showed a resolution of 12.51% of the 241 Am at 59.5 keV peak. In conclusion, the Te solution vertical Bridgman technique was proved to be a practical way to effectively reduce the twins in CdMnTe crystal and to produce high quality detector-grade CdMnTe crystal with good spectroscopic performance.
Luoqiang Cai - One of the best experts on this subject based on the ideXlab platform.
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some practical consideration of a 2mw direct drive permanent magnet wind power generation system
International Conference on Energy and Environment Technology, 2009Co-Authors: Keyuan Huang, Ying Zhang, Shoudao Huang, Jian Gao, Luoqiang CaiAbstract:Nowadays, there has been much interest and studies in direct-drive permanent magnet synchronous generator (PMSG) due to its high efficiency and reliability with the rapid development of the power semiconductor devices. MW class permanent magnet synchronous generator (PMSG) is an important trend for larger capacity and higher power density. The present paper is aimed to outline the design, including optimal machine design, converter topology choosing and its control. Two 1MW back-to-back PWM converters with parallel connection are used to feed the power to the grid. The Configuration, Structure and control strategy of the converter are discussed. Some experimental results are given to illustrate the performance of the actual system.