Decoupling Capacitance

14,000,000 Leading Edge Experts on the ideXlab platform

Scan Science and Technology

Contact Leading Edge Experts & Companies

Scan Science and Technology

Contact Leading Edge Experts & Companies

The Experts below are selected from a list of 1164 Experts worldwide ranked by ideXlab platform

Fred Wang - One of the best experts on this subject based on the ideXlab platform.

  • New Boundary Condition for Decoupling Capacitance Selection in SiC Phase Legs Considering Short-Circuit Events
    2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018
    Co-Authors: Craig Timms, Liang Qiao, Fred Wang, Zheyu Zhang, Dong Dong
    Abstract:

    This paper presents a new boundary condition for designing phase legs when using the Decoupling Capacitance method. New SiC MOSFETs have much higher short-circuit currents-over 14X datasheet rating-then comparable Si IGBT devices. The energy draw on the Decoupling Capacitance due to this can be a large step input that over-voltages the device if not accounted for. Decoupling Capacitance requirements have previously been based on switching conditions during normal operation and may not be sufficient for high current devices or modules. Furthermore, fast protection work has focused on lower current discrete devices whereas this issue becomes more prevalent in higher current configurations. Analysis of device over-voltage during short-circuit events is presented along with new sizing guidelines for DC link Decoupling Capacitance.

  • design and performance evaluation of overcurrent protection schemes for silicon carbide sic power mosfets
    Energy Conversion Congress and Exposition, 2013
    Co-Authors: Zhiqiang Wang, Laren M. Tolbert, Benjamin J. Blalock, Fred Wang
    Abstract:

    Overcurrent protection of silicon carbide (SiC) MOSFETs remains a challenge due to lack of practical knowledge. This paper presents two overcurrent protection methods to improve the reliability and overall cost of the SiC MOSFET based converter. First, a solid state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the DC bus to detect and clear overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under overcurrent faults is implemented as well. The design considerations and potential issues of the protection methods are described and analyzed in detail. A phase-leg configuration based step-down converter is built to evaluate the performance of the proposed protection schemes under various conditions, considering variation of fault type, Decoupling Capacitance, protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature dependent characteristics, and applications to help designers select a proper protection method.

Benjamin J. Blalock - One of the best experts on this subject based on the ideXlab platform.

  • Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
    Ieee Transactions on Industrial Electronics, 2014
    Co-Authors: Z Q Wang, X. J. Shi, Yuncan Xue, Laren M. Tolbert, Fei Wang, Benjamin J. Blalock
    Abstract:

    Overcurrent protection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) remains a challenge due to lack of practical knowledge. This paper presents three overcurrent protection methods to improve the reliability and overall cost of SiC MOSFET-based converters. First, a solid-state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the dc bus to detect and clear overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under overcurrent faults is implemented as well. Third, a novel active overcurrent protection scheme through dynamic evaluation of fault current level is proposed. The design considerations and potential issues of the protection methods are described and analyzed in detail. A phase-leg configuration-based step-down converter is built to evaluate the performance of the protection schemes under various conditions, considering variation of fault type, Decoupling Capacitance, protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature-dependent characteristics, and applications to help designers select a proper protection method.

  • design and performance evaluation of overcurrent protection schemes for silicon carbide sic power mosfets
    Energy Conversion Congress and Exposition, 2013
    Co-Authors: Zhiqiang Wang, Laren M. Tolbert, Benjamin J. Blalock, Fred Wang
    Abstract:

    Overcurrent protection of silicon carbide (SiC) MOSFETs remains a challenge due to lack of practical knowledge. This paper presents two overcurrent protection methods to improve the reliability and overall cost of the SiC MOSFET based converter. First, a solid state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the DC bus to detect and clear overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under overcurrent faults is implemented as well. The design considerations and potential issues of the protection methods are described and analyzed in detail. A phase-leg configuration based step-down converter is built to evaluate the performance of the proposed protection schemes under various conditions, considering variation of fault type, Decoupling Capacitance, protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature dependent characteristics, and applications to help designers select a proper protection method.

Issa Batarseh - One of the best experts on this subject based on the ideXlab platform.

  • a three port flyback for pv microinverter applications with power pulsation Decoupling capability
    IEEE Transactions on Power Electronics, 2012
    Co-Authors: Haibing Hu, Souhib Harb, Xiang Fang, Z J Shen, Qian Zhang, Dehua Zhang, Issa Batarseh
    Abstract:

    A novel single-stage photovoltaic (PV) microinverter with power Decoupling capability is proposed in this paper. The proposed topology is based on three-port flyback with one port dedicated to power Decoupling function so as to reduce the Decoupling Capacitance, thus allowing for long lifetime film capacitor to be used. Operation principle is analyzed in details. Key design considerations, including key parameter selections, predictive control strategy, and the dc voltage balance control across the power Decoupling capacitor, are given in this paper. A 100-W microinverter prototype is built to verify the proposed topology. Experimental results show the proposed topology can achieve power Decoupling, while maintaining good efficiency.

  • a three port flyback for pv microinverter applications with power pulsation Decoupling capability
    IEEE Transactions on Power Electronics, 2012
    Co-Authors: Haibing Hu, Souhib Harb, Xiang Fang, Z J Shen, Qian Zhang, Dehua Zhang, Issa Batarseh
    Abstract:

    A novel single-stage photovoltaic (PV) microinverter with power Decoupling capability is proposed in this paper. The proposed topology is based on three-port flyback with one port dedicated to power Decoupling function so as to reduce the Decoupling Capacitance, thus allowing for long lifetime film capacitor to be used. Operation principle is analyzed in details. Key design considerations, including key parameter selections, predictive control strategy, and the dc voltage balance control across the power Decoupling capacitor, are given in this paper. A 100-W microinverter prototype is built to verify the proposed topology. Experimental results show the proposed topology can achieve power Decoupling, while maintaining good efficiency.

Laren M. Tolbert - One of the best experts on this subject based on the ideXlab platform.

  • Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
    Ieee Transactions on Industrial Electronics, 2014
    Co-Authors: Z Q Wang, X. J. Shi, Yuncan Xue, Laren M. Tolbert, Fei Wang, Benjamin J. Blalock
    Abstract:

    Overcurrent protection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) remains a challenge due to lack of practical knowledge. This paper presents three overcurrent protection methods to improve the reliability and overall cost of SiC MOSFET-based converters. First, a solid-state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the dc bus to detect and clear overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under overcurrent faults is implemented as well. Third, a novel active overcurrent protection scheme through dynamic evaluation of fault current level is proposed. The design considerations and potential issues of the protection methods are described and analyzed in detail. A phase-leg configuration-based step-down converter is built to evaluate the performance of the protection schemes under various conditions, considering variation of fault type, Decoupling Capacitance, protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature-dependent characteristics, and applications to help designers select a proper protection method.

  • design and performance evaluation of overcurrent protection schemes for silicon carbide sic power mosfets
    Energy Conversion Congress and Exposition, 2013
    Co-Authors: Zhiqiang Wang, Laren M. Tolbert, Benjamin J. Blalock, Fred Wang
    Abstract:

    Overcurrent protection of silicon carbide (SiC) MOSFETs remains a challenge due to lack of practical knowledge. This paper presents two overcurrent protection methods to improve the reliability and overall cost of the SiC MOSFET based converter. First, a solid state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the DC bus to detect and clear overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under overcurrent faults is implemented as well. The design considerations and potential issues of the protection methods are described and analyzed in detail. A phase-leg configuration based step-down converter is built to evaluate the performance of the proposed protection schemes under various conditions, considering variation of fault type, Decoupling Capacitance, protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature dependent characteristics, and applications to help designers select a proper protection method.

Haibing Hu - One of the best experts on this subject based on the ideXlab platform.

  • a three port flyback for pv microinverter applications with power pulsation Decoupling capability
    IEEE Transactions on Power Electronics, 2012
    Co-Authors: Haibing Hu, Souhib Harb, Xiang Fang, Z J Shen, Qian Zhang, Dehua Zhang, Issa Batarseh
    Abstract:

    A novel single-stage photovoltaic (PV) microinverter with power Decoupling capability is proposed in this paper. The proposed topology is based on three-port flyback with one port dedicated to power Decoupling function so as to reduce the Decoupling Capacitance, thus allowing for long lifetime film capacitor to be used. Operation principle is analyzed in details. Key design considerations, including key parameter selections, predictive control strategy, and the dc voltage balance control across the power Decoupling capacitor, are given in this paper. A 100-W microinverter prototype is built to verify the proposed topology. Experimental results show the proposed topology can achieve power Decoupling, while maintaining good efficiency.

  • a three port flyback for pv microinverter applications with power pulsation Decoupling capability
    IEEE Transactions on Power Electronics, 2012
    Co-Authors: Haibing Hu, Souhib Harb, Xiang Fang, Z J Shen, Qian Zhang, Dehua Zhang, Issa Batarseh
    Abstract:

    A novel single-stage photovoltaic (PV) microinverter with power Decoupling capability is proposed in this paper. The proposed topology is based on three-port flyback with one port dedicated to power Decoupling function so as to reduce the Decoupling Capacitance, thus allowing for long lifetime film capacitor to be used. Operation principle is analyzed in details. Key design considerations, including key parameter selections, predictive control strategy, and the dc voltage balance control across the power Decoupling capacitor, are given in this paper. A 100-W microinverter prototype is built to verify the proposed topology. Experimental results show the proposed topology can achieve power Decoupling, while maintaining good efficiency.