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Jong-wan Park - One of the best experts on this subject based on the ideXlab platform.
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Synthesis of crack-free thick diamond wafer by step-down control of Deposition Temperature
Journal of Materials Research, 2000Co-Authors: Jae-kap Lee, Young-joon Baik, Young-joon Park, Kwang Yong Eun, Jong-wan ParkAbstract:Due to growth tensile stress, which evolves in diamond films during Deposition, thick diamond films are easily cracked. In this study we successfully prevented growth cracks by introducing thermal compressive stress with step-down control of Deposition Temperatures during growth. Three Deposition Temperature drops of 10 °C each during Deposition enabled us to successfully synthesize crack-free four-inch diamond wafers several hundred micrometers in thickness. This method is very simple and may be applicable to coating of films of various materials different from those of substrates.
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Effect of Deposition Temperature on the Characteristics of Low Dielectric Fluorinated Amorphous Carbon Thin Films
Korean Journal of Materials Research, 1999Co-Authors: Jeongwon Park, Sung-hoon Yang, Jong-wan ParkAbstract:Fluorinated amorphous carbon (a-C:F) films were prepared by an electron cyclotron resonance chemical vapor Deposition (ECRCVD) system using a gas mixture of and over a range of Deposition Temperature (room Temperature ~ 300). 500 thick DLC films were pre-deposited on Si substrate to improve the strength between substrate and a-C:F film. The chemical bonding structure, chemical composition, surface roughness and dielectric constant of a-C:F films deposited by varying the Deposition Temperature were studied with a variety of techniques, such as Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), atomic force microscopy (AFM) and capacitance-voltage(C-V) measurement. Both Deposition rate and fluorine content decreased linearly with increasing Deposition Temperature. As the Deposition Temperature increased from room Temperature to 300, the fluorine concentration decreased from 53.9at.% down to 41.0at.%. The dielectric constant increased from 2.45 to 2.71 with increasing the Deposition Temperature from room Temperature to 300. The film shrinkage was reduced with increasing Deposition Temperature. This results ascribed by the increased crosslinking in the films at the higher Deposition Temperature.
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Effect of Deposition Temperature on dielectric properties of PECVD Ta2O5 thin film
Journal of Materials Science, 1994Co-Authors: Hwan Seong Moon, Jong-wan Park, Jae Suk Lee, Sung Wook Han, Jae-hak Lee, Seung Kee Yang, Hyung-ho ParkAbstract:Tantalum oxide film formation by plasma-enhanced chemical vapour Deposition (PECVD) using TaCl5 as a source material was examined. The effects of Deposition Temperature on the formation, structure and electric properties of the Ta2O5 film were investigated for Al/Ta2O5/ p-Si (MTS) capacitors. The Deposition rate and refractive index increased with increasing Deposition Temperature. It was found that the structure of Ta2O5 deposited by PECVD was amorphous as-deposited. However, crystalline δ-Ta2O5 of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta2O5 were found to be 2.54 fF μm−2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other Deposition methods.
Ji Yik Yang - One of the best experts on this subject based on the ideXlab platform.
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Influences of Deposition Temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor
Applied Physics Letters, 1996Co-Authors: Kow-ming Chang, Shih Wei Wang, Chin Jen Wu, Chii Horng Li, Ji Yik YangAbstract:In this letter, fluorinated silicon oxide (FxSiOy) films were deposited in the electron cyclotron resonance (ECR) chemical vapor Deposition system with SiH4, O2, and CF4 as the reaction gases. The CF4, in contrast to SiF4 or FSi(OC2H5)3 used in other reports, is an indirect fluorinating source. The fluorinating mechanism is similar to that of the etching of oxide by fluorocarbon plasma, therefore, the thermal stability of the incorporated fluorine must strongly depend on the Deposition Temperature. It is found that the thermal stability and moisture resistance are greatly improved by increasing the Deposition Temperature. However, the higher Deposition Temperature also results in a higher compressed stress and dielectric constant. Besides, to get the moisture resistance, the Deposition Temperature must be above 300 °C. On the other hand, ECR‐SiO2 (without fluorination), even deposited at room Temperature, is shown to have a good water resistance. Therefore, by choosing Deposition Temperature for FxSiOy to...
M. Ino - One of the best experts on this subject based on the ideXlab platform.
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Effects of Deposition Temperature on the oxidation resistance and electrical characteristics of silicon nitride
IEEE Transactions on Electron Devices, 1994Co-Authors: M. Yoshimaru, N. Inoue, H. Tamura, M. InoAbstract:A study was made of the effects of Deposition Temperature on the oxidation resistance and electrical characteristics of silicon nitride. It was found that silicon nitride below a certain limit thickness has no oxidation resistance. This threshold falls as the Deposition Temperature is lowered. 3-nm-thick silicon nitride deposited at 600/spl deg/C has sufficient oxidation resistance For wet oxidation at 850/spl deg/C, while 5 nm film deposited at 750/spl deg/C has no oxidation resistance. The electrical characteristics also improve as the Deposition Temperature is lowered. 6-nm-thick silicon nitride deposited at 600/spl deg/C shows a TDDB lifetime that is about two orders longer than that of 6-nm-thick silicon nitride deposited at 700/spl deg/C. It was also found that the silicon nitride transition layer which is deposited at the initial stage of Deposition influences the oxidation resistance and electrical characteristics of thin silicon nitride. It was concluded that lowering the Deposition Temperature reduces the influence of the transition layer and improves the oxidation resistance and electrical characteristics of thin silicon nitride. >
P. Roca I Cabarrocas - One of the best experts on this subject based on the ideXlab platform.
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Effect of Deposition Temperature on polymorphous silicon thin films by PECVD: Role of hydrogen
Materials Science in Semiconductor Processing, 2016Co-Authors: L. Hamui, B.m. Monroy, K.h. Kim, A. López-suárez, Jaime Santoyo-salazar, Máximo López-lópez, P. Roca I Cabarrocas, Guillermo SantanaAbstract:Abstract Pm-Si:H which has improved optical and transport properties as well as stability compared to hydrogenated amorphous silicon is studied. In order to understand the effect of the growth Temperature on pm-Si:H films, hydrogen bonding and stability were analyzed in this work. Samples grown at different Temperatures were compared and a change on the films morphology and structure was observed. HRTEM images evidence nanocrystals with approximate size of 9 nm. A growth surface reorganization was observed at an almost constant Deposition rate. Increasing the Deposition Temperature leads to a more ordered, compact and smooth structure of the pm-Si:H films. Hydrogen interaction with the growing surface is related to the Deposition Temperature, changing the growth of the amorphous matrix due to hydrogen surface diffusion into lower energy and more stable positions. The total hydrogen in the film is reduced as Temperature increases and hydrogen becomes more tightly bonded, which changes in a non monotonous way how the nanocrystals are incorporated and their environment. The optoelectronic properties of the films are directly related to the incorporation of hydrogen and whether it is weakly or tightly bonded. A diminution of the optical gap of the pm-Si:H films in the range from 1.71 to 1.65 eV was observed with the increase of the Deposition Temperature in the range from 175 to 275 °C.
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Influence of the Deposition Temperature on the performance of microcrystalline silicon thin film transistors
Solid-State Electronics, 2008Co-Authors: M. Oudwan, P. Roca I Cabarrocas, A. Abramov, François TemplierAbstract:Abstract Bottom gate microcrystalline silicon thin film transistors (μc-Si:H TFT) have been fabricated at three different Deposition Temperatures (150, 200 and 250 °C) for the μc-Si layer. We found that the linear field effect mobility increases from 0.1 to 0.44 cm 2 /V s by decreasing the Temperature from 250 °C to 150 °C, and that the leakage current of TFTs with μc-Si deposited at 150 °C is lower than that of μc-Si:H deposited at 250 °C. Moreover, there is no influence of the Deposition Temperature on the stability of μc-Si:H TFTs. The improvement of the electrical characteristics at lower Deposition Temperatures is discussed in terms of a lower concentration of donor active oxygen atoms at lower Temperature.
Kow-ming Chang - One of the best experts on this subject based on the ideXlab platform.
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Influences of Deposition Temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor
Applied Physics Letters, 1996Co-Authors: Kow-ming Chang, Shih Wei Wang, Chin Jen Wu, Chii Horng Li, Ji Yik YangAbstract:In this letter, fluorinated silicon oxide (FxSiOy) films were deposited in the electron cyclotron resonance (ECR) chemical vapor Deposition system with SiH4, O2, and CF4 as the reaction gases. The CF4, in contrast to SiF4 or FSi(OC2H5)3 used in other reports, is an indirect fluorinating source. The fluorinating mechanism is similar to that of the etching of oxide by fluorocarbon plasma, therefore, the thermal stability of the incorporated fluorine must strongly depend on the Deposition Temperature. It is found that the thermal stability and moisture resistance are greatly improved by increasing the Deposition Temperature. However, the higher Deposition Temperature also results in a higher compressed stress and dielectric constant. Besides, to get the moisture resistance, the Deposition Temperature must be above 300 °C. On the other hand, ECR‐SiO2 (without fluorination), even deposited at room Temperature, is shown to have a good water resistance. Therefore, by choosing Deposition Temperature for FxSiOy to...