The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
C A Dimitriadis - One of the best experts on this subject based on the ideXlab platform.
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analytical Drain Current compact model in the depletion operation region of short channel triple gate junctionless transistors
IEEE Transactions on Electron Devices, 2017Co-Authors: T A Oproglidis, G Ghibaudo, A Tsormpatzoglou, D H Tassis, T A Karatsori, Sylvain Barraud, C A DimitriadisAbstract:A new charge-based analytical compact model for the Drain Current of junctionless (JL) triple-gate MOSFETs is presented, which includes the short-channel effects, the saturation velocity overshoot, the series resistance, and the mobility degradation effects. The proposed model consists of a single analytical equation that covers the depletion operation region in which the bulk conduction determines the Drain Current. The model is supported by experimental measurements in JL nanowire transistors with channel length varying from 95 to 25 nm and doping concentration $2 \times 10^{19}$ cm $^{\mathrm {-3}}$ . The overall results reveal the very good accuracy of the proposed analytical compact model, making it suitable for circuit simulation tools.
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impact of source Drain series resistance on Drain Current mismatch in advanced fully depleted soi n mosfets
IEEE Electron Device Letters, 2015Co-Authors: E G Ioannidis, C A Dimitriadis, C G Theodorou, S Haendler, E Josse, G GhibaudoAbstract:In this letter, we demonstrate the existence of the source–Drain series resistance mismatch and its impact on Drain Current variability with regard to the other mismatch parameters. To this end, we propose a new methodology for the Drain Current mismatch study based on $Y$ -function, enabling a precise determination of the various variability sources in advanced fully depleted silicon on insulator (SOI) MOS devices.
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analytical surface potential based Drain Current model for amorphous ingazno thin film transistors
Journal of Applied Physics, 2013Co-Authors: A Tsormpatzoglou, N A Hastas, N Choi, Forough Mahmoudabadi, Miltiadis K Hatalis, C A DimitriadisAbstract:A fully analytical surface-potential-based Drain Current model for amorphous InGaZnO (α-IGZO) thin film transistors (TFTs) has been developed based on a Gaussian distribution of subgap states, with the central energy fixed at the conduction band edge, which is approximated by two exponential distributions. This model includes both drift and diffusion components to describe the Drain Current in all regions of operation. Using an empirical mobility relationship that depends on both horizontal and vertical electric field, it is demonstrated that the model describes accurately the experimental transfer and output characteristics, making the model suitable for the design of circuits using α-IGZO TFTs.
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compact model of Drain Current in short channel triple gate finfets
IEEE Transactions on Electron Devices, 2012Co-Authors: N Fasarakis, G Ghibaudo, A Tsormpatzoglou, D H Tassis, I Pappas, K Papathanasiou, Matthias Bucher, C A DimitriadisAbstract:An analytical compact Drain Current model for undoped (or lightly doped) short-channel triple-gate fin-shaped field-effect transistors (finFETs) is presented, taking into account quantum-mechanical and short-channel effects such as threshold-voltage shifts, Drain-induced barrier lowering, and subthreshold slope degradation. In the saturation region, the effects of series resistance, surface roughness scattering, channel length modulation, and saturation velocity were also considered. The proposed model has been validated by comparing the transfer and output characteristics with device simulations and with experimental results. The good accuracy and the symmetry of the model make it suitable for implementation in circuit simulation tools.
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origin of low frequency noise in the low Drain Current range of bottom gate amorphous igzo thin film transistors
IEEE Electron Device Letters, 2011Co-Authors: C G Theodorou, A Tsormpatzoglou, Miltiadis K Hatalis, C A Dimitriadis, Shahrukh A Khan, J Jomaah, G GhibaudoAbstract:The low-frequency noise of bottom-gate amorphous IGZO thin-film transistors is investigated in the low Drain Current range. The noise spectra show generation-recombination (g-r) noise at Drain Currents Id <; 5 nA, attributed to bulk traps located in a thin layer of the IGZO close to the conducting channel. At higher Drain Currents, a pure 1/f noise is observed. It is shown that the carrier number fluctuations are responsible for the 1/f noise due to trapping/detrapping of carriers in slow oxide traps, located near the interface with uniform spatial distribution.
Matthias Bucher - One of the best experts on this subject based on the ideXlab platform.
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charge based modeling of long channel symmetric double gate junction fets part i Drain Current and transconductances
IEEE Transactions on Electron Devices, 2018Co-Authors: Nikolaos Makris, Jeanmichel Sallese, Farzan Jazaeri, Rupendra Kumar Sharma, Matthias BucherAbstract:The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of not only device fabrication but also its operation. The device has been largely used in low-noise applications, but also more recently, in power electronics. Physics-based compact models for JFETs, contrary to MOSFETs, are, however, scarce. In this paper, an analytical, charge-based model is established for the mobile charges, Drain Current, and transconductances of symmetric DG JFETs, covering all regions of device operation. The model is unified and continuous from subthreshold to linear and saturation operation and is valid over a large temperature range. This charge-based model constitutes the basis of a full compact model of the DG JFET.
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compact model of Drain Current in short channel triple gate finfets
IEEE Transactions on Electron Devices, 2012Co-Authors: N Fasarakis, G Ghibaudo, A Tsormpatzoglou, D H Tassis, I Pappas, K Papathanasiou, Matthias Bucher, C A DimitriadisAbstract:An analytical compact Drain Current model for undoped (or lightly doped) short-channel triple-gate fin-shaped field-effect transistors (finFETs) is presented, taking into account quantum-mechanical and short-channel effects such as threshold-voltage shifts, Drain-induced barrier lowering, and subthreshold slope degradation. In the saturation region, the effects of series resistance, surface roughness scattering, channel length modulation, and saturation velocity were also considered. The proposed model has been validated by comparing the transfer and output characteristics with device simulations and with experimental results. The good accuracy and the symmetry of the model make it suitable for implementation in circuit simulation tools.
A Tsormpatzoglou - One of the best experts on this subject based on the ideXlab platform.
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analytical Drain Current compact model in the depletion operation region of short channel triple gate junctionless transistors
IEEE Transactions on Electron Devices, 2017Co-Authors: T A Oproglidis, G Ghibaudo, A Tsormpatzoglou, D H Tassis, T A Karatsori, Sylvain Barraud, C A DimitriadisAbstract:A new charge-based analytical compact model for the Drain Current of junctionless (JL) triple-gate MOSFETs is presented, which includes the short-channel effects, the saturation velocity overshoot, the series resistance, and the mobility degradation effects. The proposed model consists of a single analytical equation that covers the depletion operation region in which the bulk conduction determines the Drain Current. The model is supported by experimental measurements in JL nanowire transistors with channel length varying from 95 to 25 nm and doping concentration $2 \times 10^{19}$ cm $^{\mathrm {-3}}$ . The overall results reveal the very good accuracy of the proposed analytical compact model, making it suitable for circuit simulation tools.
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analytical surface potential based Drain Current model for amorphous ingazno thin film transistors
Journal of Applied Physics, 2013Co-Authors: A Tsormpatzoglou, N A Hastas, N Choi, Forough Mahmoudabadi, Miltiadis K Hatalis, C A DimitriadisAbstract:A fully analytical surface-potential-based Drain Current model for amorphous InGaZnO (α-IGZO) thin film transistors (TFTs) has been developed based on a Gaussian distribution of subgap states, with the central energy fixed at the conduction band edge, which is approximated by two exponential distributions. This model includes both drift and diffusion components to describe the Drain Current in all regions of operation. Using an empirical mobility relationship that depends on both horizontal and vertical electric field, it is demonstrated that the model describes accurately the experimental transfer and output characteristics, making the model suitable for the design of circuits using α-IGZO TFTs.
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compact model of Drain Current in short channel triple gate finfets
IEEE Transactions on Electron Devices, 2012Co-Authors: N Fasarakis, G Ghibaudo, A Tsormpatzoglou, D H Tassis, I Pappas, K Papathanasiou, Matthias Bucher, C A DimitriadisAbstract:An analytical compact Drain Current model for undoped (or lightly doped) short-channel triple-gate fin-shaped field-effect transistors (finFETs) is presented, taking into account quantum-mechanical and short-channel effects such as threshold-voltage shifts, Drain-induced barrier lowering, and subthreshold slope degradation. In the saturation region, the effects of series resistance, surface roughness scattering, channel length modulation, and saturation velocity were also considered. The proposed model has been validated by comparing the transfer and output characteristics with device simulations and with experimental results. The good accuracy and the symmetry of the model make it suitable for implementation in circuit simulation tools.
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origin of low frequency noise in the low Drain Current range of bottom gate amorphous igzo thin film transistors
IEEE Electron Device Letters, 2011Co-Authors: C G Theodorou, A Tsormpatzoglou, Miltiadis K Hatalis, C A Dimitriadis, Shahrukh A Khan, J Jomaah, G GhibaudoAbstract:The low-frequency noise of bottom-gate amorphous IGZO thin-film transistors is investigated in the low Drain Current range. The noise spectra show generation-recombination (g-r) noise at Drain Currents Id <; 5 nA, attributed to bulk traps located in a thin layer of the IGZO close to the conducting channel. At higher Drain Currents, a pure 1/f noise is observed. It is shown that the carrier number fluctuations are responsible for the 1/f noise due to trapping/detrapping of carriers in slow oxide traps, located near the interface with uniform spatial distribution.
David Jimenez - One of the best experts on this subject based on the ideXlab platform.
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explicit Drain Current charge and capacitance model of graphene field effect transistors
IEEE Transactions on Electron Devices, 2011Co-Authors: David JimenezAbstract:This paper presents a compact physics-based model of the Drain Current, charge, and capacitance of graphene field-effect transistors, which is of relevance for the exploration of dc, ac, and transient behavior of graphene-based circuits. The physical framework is a field-effect model and drift-diffusion carrier transport incorporating saturation velocity effects. First, an explicit model has been derived for the Drain Current. Using it as a basis, explicit closed-form expressions for the charge and capacitances based on the Ward-Dutton partition scheme were derived, covering continuously all the operation regions. The model is of special interest for analog and radio-frequency applications where bandgap engineering of graphene is not needed.
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explicit Drain Current model of graphene field effect transistors targeting analog and radio frequency applications
IEEE Transactions on Electron Devices, 2011Co-Authors: David Jimenez, O MoldovanAbstract:We present a compact physics-based model of the Current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and RF applications where band-gap engineering of graphene could be not needed. The physical framework is a field-effect model and drift-diffusion carrier transport. Explicit closed-form expressions have been derived for the Drain Current continuously covering all operation regions. The model has been benchmarked with measured prototype devices, demonstrating accuracy and predictive behavior. Finally, we show an example of projection of the intrinsic gain as a figure of merit commonly used in RF/analog applications.
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explicit Drain Current charge and capacitance model of graphene field effect transistors
arXiv: Mesoscale and Nanoscale Physics, 2011Co-Authors: David JimenezAbstract:I present a compact physics-based model of the Drain Current, charge and capacitance of graphene field-effect transistors, of relevance for exploration of DC, AC and transient behavior of graphene based circuits. The physical framework is a field-effect model and drift-diffusion carrier transport incorporating saturation velocity effects. First, an explicit model has been derived for the Drain Current. Using it as a basis, explicit closed-form expressions for the charge and capacitances based on the Ward-Dutton partition scheme, covering continuosly all operation regions. The model is of special interest for analog and radio-frequency applications where bandgap engineering of graphene could be not needed.
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explicit Drain Current model of graphene field effect transistors targeting analog and radio frequency applications
arXiv: Mesoscale and Nanoscale Physics, 2011Co-Authors: David Jimenez, Oana MoldovanAbstract:We present a compact physics-based model of the Current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and radio-frequency applications where bandgap engineering of graphene could be not needed. The physical framework is a field-effect model and drift-diffusion carrier transport. Explicit closed-form expressions have been derived for the Drain Current covering continuosly all operation regions. The model has been benchmarked with measured prototype devices, demonstrating accuracy and predictive behavior. Finally, we show an example of projection of the intrinsic gain as a figure of merit commonly used in RF /analog applications.
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erratum analytic model for the surface potential and Drain Current in negative capacitance field effect transistors
IEEE Transactions on Electron Devices, 2010Co-Authors: David Jimenez, E Miranda, A GodoyAbstract:In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance (NC) region could act as a step-up converter of the surface potential in a metal-oxide-semiconductor structure, opening a new route for the realization of transistors with steeper subthreshold characteristics (S <; 60mV/dec). In this paper, a comprehensive physics-based surface potential and a Drain Current model for the NC field-effect transistor are reported. The model is aimed to evaluate the potentiality of such transistors for low-power switching applications. This paper also sheds light on how operation in the NC region can be experimentally detected.
Yichun Zhou - One of the best experts on this subject based on the ideXlab platform.
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surface potential based Drain Current model for long channel junctionless double gate mosfets
IEEE Transactions on Electron Devices, 2012Co-Authors: Zhuojun Chen, Yongguang Xiao, Minghua Tang, Ying Xiong, Jianqiang Huang, Jiancheng Li, Xiaochen Gu, Yichun ZhouAbstract:A surface-potential-based model is developed for the symmetric long-channel junctionless double-gate MOSFET. The relationships between surface potential and gate voltage are derived from some effective approximations to Poisson's equation for deep depletion, partial depletion, and accumulation conditions. Then, the Pao-Sah integral is carried out to obtain the Drain Current. It is shown that the model is in good agreement with numerical simulations from subthreshold to saturation region. Finally, we discuss the strengths and limitations (i.e., threshold voltage shifts) of the JLFET, which has been recently proposed as a promising candidate for the JFET.