The Experts below are selected from a list of 321 Experts worldwide ranked by ideXlab platform

Yongming Li - One of the best experts on this subject based on the ideXlab platform.

  • selective Electrochemical Etching of single walled carbon nanotubes
    Advanced Functional Materials, 2009
    Co-Authors: Hongliang Zhang, Liping Huang, Gui Yu, Hisashi Kajiura, Yongming Li
    Abstract:

    Single-walled carbon nanotubes (SWNTs) are a promising material for future nanotechnology. However, their applications are still limited in success because of the co-existence of metallic SWNTs and semiconducting SWNTs produced samples. Here, Electrochemical Etching, which shows both diameter and electrical selectivity, is demonstrated to remove SWNTs. With the aid of a back-gate electric field, selective removal of metallic SWNTs is realized, resulting in high-performance SWNT field-effect transistors with pure semiconducting SWNT channels. Moreover, Electrochemical Etching is realized on a selective area. These findings would be valuable for research and the application of SWNTs in electrochemistry and in electronic devices.

  • Selective Electrochemical Etching of Single‐Walled Carbon Nanotubes
    Advanced Functional Materials, 2009
    Co-Authors: Hongliang Zhang, Liping Huang, Gui Yu, Hisashi Kajiura, Yongming Li
    Abstract:

    Single-walled carbon nanotubes (SWNTs) are a promising material for future nanotechnology. However, their applications are still limited in success because of the co-existence of metallic SWNTs and semiconducting SWNTs produced samples. Here, Electrochemical Etching, which shows both diameter and electrical selectivity, is demonstrated to remove SWNTs. With the aid of a back-gate electric field, selective removal of metallic SWNTs is realized, resulting in high-performance SWNT field-effect transistors with pure semiconducting SWNT channels. Moreover, Electrochemical Etching is realized on a selective area. These findings would be valuable for research and the application of SWNTs in electrochemistry and in electronic devices.

Patrick J. French - One of the best experts on this subject based on the ideXlab platform.

  • Electrochemical Etching for n-type Silicon using a Novel Etchant
    Transducers ’01 Eurosensors XV, 2020
    Co-Authors: Shinichi Izuo, Hiroshi Ohji, Patrick J. French, Kazuhiko Tsutsumi
    Abstract:

    In this paper, Electrochemical Etching using a novel etchant for n-type silicon is presented. Using a novel etchant that is Dimethylformamide (DMF) and hydrofluoric acid (HF) based, macropores have been successfully fabricated and selectivity over the masking layer, such as silicon dioxide and silicon nitride, have been improved. Concentration of H2O in DMF-HF based etchant influences on etch rate of silicon dioxide. Conductivity of DMF-HF based etchant effects on pore morphology. These results make Electrochemical Etching process more compatible with other processes such as circuit.

  • Initial pits for Electrochemical Etching in hydrofluoric acid
    Sensors and Actuators A-physical, 2000
    Co-Authors: Hiroshi Ohji, Patrick J. French, Shinichi Izuo, Kazuhiko Tsutsumi
    Abstract:

    This paper reports on a characterization of structures fabricated by Electrochemical Etching in hydrofluoric acid (HF) using different types of initial pits. An initial pit has been thought to require a sharp tip in order to collect electronic holes generated by illumination. Therefore, the initial pits have been formed by Etching in a KOH solution, which suffers from crystal orientation dependence. We successfully demonstrate the structures fabricated by the Electrochemical Etching with the initial pits, which have flat or round base. These pits are formed by isotropic wet Etching or reactive ion Etching (RIE), which are free from crystal orientation of silicon substrate. Furthermore, regular hole patterns can be achieved without initial pits. This makes the Electrochemical Etching process more simple. The electric field in the silicon is calculated and the calculated results support the experimental results.

  • Fabrication of mechanical structures in p-type silicon using Electrochemical Etching
    Sensors and Actuators A-physical, 2000
    Co-Authors: Hiroshi Ohji, Patrick J. French, Kazuhiko Tsutsumi
    Abstract:

    In this paper, free standing beams and trench structures are successfully fabricated in p-type silicon using Electrochemical Etching in HF-dimethyl-formamide (DMF). The morphology of the etched surface and the etch rate as a function of the current density are investigated. The optimization of the current density enables to fabricate trench structures with width and pitch of 2.5 μm and 4 μm, respectively. After the fabrication of these trench structures, the applied voltage is increased in order to connect these trenches under the wall structures. Therefore free standing beams with single crystal silicon can be achieved in one step. The aluminium etch rate in 4% HF-DMF is very low due to low water content in this chemical solution. Furthermore silicon dioxide is not attacked by the etchant during the Electrochemical Etching. Therefore thermal dioxide layer can be used as a masking layer to make an initial pit. This makes the Electrochemical Etching process simple. However, it is difficult to control the etched width using the current density adjusted by the applied voltage during the Etching.

  • Single step Electrochemical Etching in ammonium fluoride
    Sensors and Actuators A-physical, 1999
    Co-Authors: H. Ohji, Patrick J. French
    Abstract:

    This paper presents a new technique of micromachining using single step Electrochemical Etching in an ammonium fluoride based etchant. This Etching technology is to fabricate 3-D structures in single crystal silicon by a combination of anisotropic and isotropic Etching mode. The etch rate and morphology of the etched surface are investigated for the etch parameters (etchant concentration, current density). Optimization of these parameters makes it possible to make free standing beams. Using the ammonium fluoride as the etchant, aluminium survives the Etching.

  • fabrication of free standing structure using single step Electrochemical Etching in hydrofluoric acid
    Sensors and Actuators A-physical, 1999
    Co-Authors: H. Ohji, P J Trimp, Patrick J. French
    Abstract:

    This paper presents a new technique of micromachining using single step Electrochemical Etching in hydrofluoric acid (HF). The Electrochemical Etching in HF is known as a technique for porous silicon formation. This Etching technique is applied to fabricate 3-D structures in single crystal silicon by a combination of anisotropic and isotropic modes. The diameter of the pore, or the width of the trench, can be controlled by the current density. First, vertical walls are formed and after desired depth is obtained, current density is increased by adjusting the light intensity. The width of the trenches is increased under the structures without affecting the width of existing trenches. The connection of the trenches can be achieved and free standing beams obtained with only one mask. The free standing beams with height, width and length of 40 μm, 2 μm and 250 μm, respectively, have been made of single crystal silicon.

Hongliang Zhang - One of the best experts on this subject based on the ideXlab platform.

  • selective Electrochemical Etching of single walled carbon nanotubes
    Advanced Functional Materials, 2009
    Co-Authors: Hongliang Zhang, Liping Huang, Gui Yu, Hisashi Kajiura, Yongming Li
    Abstract:

    Single-walled carbon nanotubes (SWNTs) are a promising material for future nanotechnology. However, their applications are still limited in success because of the co-existence of metallic SWNTs and semiconducting SWNTs produced samples. Here, Electrochemical Etching, which shows both diameter and electrical selectivity, is demonstrated to remove SWNTs. With the aid of a back-gate electric field, selective removal of metallic SWNTs is realized, resulting in high-performance SWNT field-effect transistors with pure semiconducting SWNT channels. Moreover, Electrochemical Etching is realized on a selective area. These findings would be valuable for research and the application of SWNTs in electrochemistry and in electronic devices.

  • Selective Electrochemical Etching of Single‐Walled Carbon Nanotubes
    Advanced Functional Materials, 2009
    Co-Authors: Hongliang Zhang, Liping Huang, Gui Yu, Hisashi Kajiura, Yongming Li
    Abstract:

    Single-walled carbon nanotubes (SWNTs) are a promising material for future nanotechnology. However, their applications are still limited in success because of the co-existence of metallic SWNTs and semiconducting SWNTs produced samples. Here, Electrochemical Etching, which shows both diameter and electrical selectivity, is demonstrated to remove SWNTs. With the aid of a back-gate electric field, selective removal of metallic SWNTs is realized, resulting in high-performance SWNT field-effect transistors with pure semiconducting SWNT channels. Moreover, Electrochemical Etching is realized on a selective area. These findings would be valuable for research and the application of SWNTs in electrochemistry and in electronic devices.

H. Ohji - One of the best experts on this subject based on the ideXlab platform.

  • Single step Electrochemical Etching in ammonium fluoride
    Sensors and Actuators A-physical, 1999
    Co-Authors: H. Ohji, Patrick J. French
    Abstract:

    This paper presents a new technique of micromachining using single step Electrochemical Etching in an ammonium fluoride based etchant. This Etching technology is to fabricate 3-D structures in single crystal silicon by a combination of anisotropic and isotropic Etching mode. The etch rate and morphology of the etched surface are investigated for the etch parameters (etchant concentration, current density). Optimization of these parameters makes it possible to make free standing beams. Using the ammonium fluoride as the etchant, aluminium survives the Etching.

  • fabrication of free standing structure using single step Electrochemical Etching in hydrofluoric acid
    Sensors and Actuators A-physical, 1999
    Co-Authors: H. Ohji, P J Trimp, Patrick J. French
    Abstract:

    This paper presents a new technique of micromachining using single step Electrochemical Etching in hydrofluoric acid (HF). The Electrochemical Etching in HF is known as a technique for porous silicon formation. This Etching technique is applied to fabricate 3-D structures in single crystal silicon by a combination of anisotropic and isotropic modes. The diameter of the pore, or the width of the trench, can be controlled by the current density. First, vertical walls are formed and after desired depth is obtained, current density is increased by adjusting the light intensity. The width of the trenches is increased under the structures without affecting the width of existing trenches. The connection of the trenches can be achieved and free standing beams obtained with only one mask. The free standing beams with height, width and length of 40 μm, 2 μm and 250 μm, respectively, have been made of single crystal silicon.

Liping Huang - One of the best experts on this subject based on the ideXlab platform.

  • selective Electrochemical Etching of single walled carbon nanotubes
    Advanced Functional Materials, 2009
    Co-Authors: Hongliang Zhang, Liping Huang, Gui Yu, Hisashi Kajiura, Yongming Li
    Abstract:

    Single-walled carbon nanotubes (SWNTs) are a promising material for future nanotechnology. However, their applications are still limited in success because of the co-existence of metallic SWNTs and semiconducting SWNTs produced samples. Here, Electrochemical Etching, which shows both diameter and electrical selectivity, is demonstrated to remove SWNTs. With the aid of a back-gate electric field, selective removal of metallic SWNTs is realized, resulting in high-performance SWNT field-effect transistors with pure semiconducting SWNT channels. Moreover, Electrochemical Etching is realized on a selective area. These findings would be valuable for research and the application of SWNTs in electrochemistry and in electronic devices.

  • Selective Electrochemical Etching of Single‐Walled Carbon Nanotubes
    Advanced Functional Materials, 2009
    Co-Authors: Hongliang Zhang, Liping Huang, Gui Yu, Hisashi Kajiura, Yongming Li
    Abstract:

    Single-walled carbon nanotubes (SWNTs) are a promising material for future nanotechnology. However, their applications are still limited in success because of the co-existence of metallic SWNTs and semiconducting SWNTs produced samples. Here, Electrochemical Etching, which shows both diameter and electrical selectivity, is demonstrated to remove SWNTs. With the aid of a back-gate electric field, selective removal of metallic SWNTs is realized, resulting in high-performance SWNT field-effect transistors with pure semiconducting SWNT channels. Moreover, Electrochemical Etching is realized on a selective area. These findings would be valuable for research and the application of SWNTs in electrochemistry and in electronic devices.