The Experts below are selected from a list of 36348 Experts worldwide ranked by ideXlab platform
Wei Huang - One of the best experts on this subject based on the ideXlab platform.
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multiphosphine oxide hosts for ultralow voltage driven true blue thermally activated delayed fluorescence diodes with External Quantum Efficiency beyond 20
Advanced Materials, 2016Co-Authors: Jing Zhang, Dongxue Ding, Ying Wei, Fuquan Han, Wei HuangAbstract:Highly efficient low-voltage-driven -true-blue thermally activated -delayed fluorescence diodes are realized through employing a tri-phosphine oxide host (2,2',4-tris(di(phenyl) -phosphoryl)-diphenylether (DPETPO)) with a record External Quantum Efficiency of 23.0% and the lowest onset voltage of 2.8 V to date.
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Multiphosphine‐Oxide Hosts for Ultralow‐Voltage‐Driven True‐Blue Thermally Activated Delayed Fluorescence Diodes with External Quantum Efficiency beyond 20%
Advanced materials (Deerfield Beach Fla.), 2015Co-Authors: Jing Zhang, Dongxue Ding, Ying Wei, Fuquan Han, Wei HuangAbstract:Highly efficient low-voltage-driven -true-blue thermally activated -delayed fluorescence diodes are realized through employing a tri-phosphine oxide host (2,2',4-tris(di(phenyl) -phosphoryl)-diphenylether (DPETPO)) with a record External Quantum Efficiency of 23.0% and the lowest onset voltage of 2.8 V to date.
Ying Wei - One of the best experts on this subject based on the ideXlab platform.
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multiphosphine oxide hosts for ultralow voltage driven true blue thermally activated delayed fluorescence diodes with External Quantum Efficiency beyond 20
Advanced Materials, 2016Co-Authors: Jing Zhang, Dongxue Ding, Ying Wei, Fuquan Han, Wei HuangAbstract:Highly efficient low-voltage-driven -true-blue thermally activated -delayed fluorescence diodes are realized through employing a tri-phosphine oxide host (2,2',4-tris(di(phenyl) -phosphoryl)-diphenylether (DPETPO)) with a record External Quantum Efficiency of 23.0% and the lowest onset voltage of 2.8 V to date.
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Multiphosphine‐Oxide Hosts for Ultralow‐Voltage‐Driven True‐Blue Thermally Activated Delayed Fluorescence Diodes with External Quantum Efficiency beyond 20%
Advanced materials (Deerfield Beach Fla.), 2015Co-Authors: Jing Zhang, Dongxue Ding, Ying Wei, Fuquan Han, Wei HuangAbstract:Highly efficient low-voltage-driven -true-blue thermally activated -delayed fluorescence diodes are realized through employing a tri-phosphine oxide host (2,2',4-tris(di(phenyl) -phosphoryl)-diphenylether (DPETPO)) with a record External Quantum Efficiency of 23.0% and the lowest onset voltage of 2.8 V to date.
Thorsten Trupke - One of the best experts on this subject based on the ideXlab platform.
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Addressing limitations of photoluminescence based External Quantum Efficiency measurements
Journal of Applied Physics, 2018Co-Authors: Appu Paduthol, Mattias K. Juhl, Thorsten TrupkeAbstract:The spectral response of photoluminescence is a contactless method that provides a measurement of the relative External Quantum Efficiency of silicon solar cells and wafers. This method is accurate only if the measured luminescence originates from the radiative recombination of voltage dependent carriers. This paper investigates the impact of luminescence from voltage independent carriers in heavily diffused regions and other spurious sources of luminescence, such as luminescence from dielectric layers. A method, based on partial shading, is then demonstrated to record luminescence from only the voltage dependent carriers. This method is shown to provide accurate relative External Quantum Efficiency on cells and partially processed wafers. The relevance of the dependence of the measured data on the angular distribution of the incident light is demonstrated in this context, which explains errors in previously published data.
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Limitations of photoluminescence based External Quantum Efficiency measurements
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC 28th PVSEC & 34th EU PVSEC), 2018Co-Authors: Appu Paduthol, Mattias K. Juhl, Thorsten TrupkeAbstract:The spectral response of photoluminescence is a contactless method that provides a measurement of the relative External Quantum Efficiency of silicon solar cells and wafers. This paper elaborates on a few limitations of this measurement technique to measure the actual External Quantum Efficiency. Firstly, this method is accurate only if the measured luminescence originates from the radiative recombination of voltage dependent carriers. This paper investigates the impact of luminescence from other spurious sources of luminescence, such as from dielectric layers, on the measurement. Secondly, the paper investigates the impact of angle of incidence of the excitation source on the measurement. This is relevant for LED based light sources, which typically have a high emission angle.
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Correcting the Effect of LED Spectra on External Quantum Efficiency Measurements of Solar Cells
IEEE Journal of Photovoltaics, 2018Co-Authors: Appu Paduthol, Mattias K. Juhl, Thorsten TrupkeAbstract:Light emitting diodes (LEDs) are increasingly being used as light sources in studying solar cells due to their high power, low cost, and long bulb lifetimes. However, LEDs do not provide the monochromatic illumination that is desired for an External Quantum Efficiency measurement. This study investigates the error associated with using a broad emission spectrum instead of monochromatic light on measurements of the External Quantum Efficiency of silicon solar cells. An analytical approach is used to quantify the impact of the finite spectral width of LEDs. The approach is then extended to provide a method that corrects for the resulting error in the measured External Quantum Efficiency (EQE). It is shown that after applying the correction method to the measured EQE, the absolute error can be reduced from 1%–2% to under 0.5%.
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Relative External Quantum Efficiency of Crystalline Silicon Wafers From Photoluminescence
IEEE Journal of Photovoltaics, 2017Co-Authors: Mattias K. Juhl, Malcolm Abbott, Thorsten TrupkeAbstract:The External Quantum Efficiency is routinely measured to determine the carrier collection probability of solar cells as a function of illumination wavelength. The common method used to perform these measurements requires a fully metalized device such that the short circuit current can be measured under monochromatic illumination. This paper demonstrates the extraction of relative External Quantum Efficiency data from open circuit photoluminescence measurements in a contactless fashion. Good agreement is observed between the photoluminescence-based technique and traditional External Quantum Efficiency data for illumination wavelengths in the range 400 to 625 nm. Deviations are observed for longer illumination wavelengths and their origin is discussed.
Jing Zhang - One of the best experts on this subject based on the ideXlab platform.
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multiphosphine oxide hosts for ultralow voltage driven true blue thermally activated delayed fluorescence diodes with External Quantum Efficiency beyond 20
Advanced Materials, 2016Co-Authors: Jing Zhang, Dongxue Ding, Ying Wei, Fuquan Han, Wei HuangAbstract:Highly efficient low-voltage-driven -true-blue thermally activated -delayed fluorescence diodes are realized through employing a tri-phosphine oxide host (2,2',4-tris(di(phenyl) -phosphoryl)-diphenylether (DPETPO)) with a record External Quantum Efficiency of 23.0% and the lowest onset voltage of 2.8 V to date.
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Multiphosphine‐Oxide Hosts for Ultralow‐Voltage‐Driven True‐Blue Thermally Activated Delayed Fluorescence Diodes with External Quantum Efficiency beyond 20%
Advanced materials (Deerfield Beach Fla.), 2015Co-Authors: Jing Zhang, Dongxue Ding, Ying Wei, Fuquan Han, Wei HuangAbstract:Highly efficient low-voltage-driven -true-blue thermally activated -delayed fluorescence diodes are realized through employing a tri-phosphine oxide host (2,2',4-tris(di(phenyl) -phosphoryl)-diphenylether (DPETPO)) with a record External Quantum Efficiency of 23.0% and the lowest onset voltage of 2.8 V to date.
Max Shatalov - One of the best experts on this subject based on the ideXlab platform.
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AlGaN deep ultraviolet LEDs with External Quantum Efficiency over 10
2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013Co-Authors: Max Shatalov, Jinwei Yang, Yuri Bilenko, Michael Shur, Remis GaskaAbstract:Deep UV LED structures with UV transparent design, reflective p-electrodes and die encapsulation exhibited External Quantum Efficiency above 11%. Progress in material growth and device fabrication will be discussed along with issues further limiting Efficiency.
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algan deep ultraviolet light emitting diodes with External Quantum Efficiency above 10
Applied Physics Express, 2012Co-Authors: Max Shatalov, Jinwei Yang, Yuri Bilenko, Remis Gaska, Alex Lunev, Xuhong Hu, Alex Dobrinsky, M S Shur, G A Garrett, Michael WrabackAbstract:Improvements of the internal Quantum Efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting ohmic contact, and chip encapsulation with optimized shape and refractive index allowed us to obtain the External Quantum Efficiency of 10.4% at 20 mA CW current with the output power up to 9.3 mW at 278 nm for AlGaN-based deep-ultraviolet light-emitting diodes grown on sapphire substrates.
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AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
Applied Physics Express, 2012Co-Authors: Max Shatalov, Jinwei Yang, Yuri Bilenko, Michael Shur, Remis Gaska, Alex Dobrinsky, Wenhong Sun, A. Lunev, Craig MoeAbstract:Improvements of the internal Quantum Efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting ohmic contact, and chip encapsulation with optimized shape and refractive index allowed us to obtain the External Quantum Efficiency of 10.4% at 20 mA CW current with the output power up to 9.3 mW at 278 nm for AlGaN-based deep-ultraviolet light-emitting diodes grown on sapphire substrates.
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278 nm deep ultraviolet LEDs with 11% External Quantum Efficiency
70th Device Research Conference, 2012Co-Authors: Max Shatalov, Jinwei Yang, Yuri Bilenko, Michael Shur, Remis Gaska, Alex Lunev, Xuhong Hu, Alex Dobrinsky, Gregory Garrett, Michael WrabackAbstract:III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) offer smaller size, wider choice of peak emission wavelengths, lower power consumption and reduced cost compared to mercury vapor lamps and other UV light sources. Increasing Efficiency of DUV LEDs accelerates their applications in bio-agent detection, analytical instrumentation, phototherapy, disinfection, biotechnology and sensing. We report on 278 nm DUV LEDs with External Quantum Efficiency exceeding 10 % achieved by improvements of material quality and light extraction.
