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Sergei V Kalinin - One of the best experts on this subject based on the ideXlab platform.

  • Ferroelectric Domain engineering of lithium niobate single crystal confined in glass
    MRS Communications, 2019
    Co-Authors: Keith Veenhuizen, Stephen Jesse, Sergei V Kalinin, Sean Mcanany, Rama K. Vasudevan, Daniel A. Nolan, Bruce G. Aitken, Himanshu Jain, Volkmar Dierolf
    Abstract:

    Ferroelectric single-crystal-architecture-in-glass is a new class of metamaterials that would enable active integrated optics if the Ferroelectric behavior is preserved within the confines of glass. We demonstrate using lithium niobate crystals fabricated in lithium niobosilicate glass by femtosecond laser irradiation that not only such behavior is preserved, the Ferroelectric Domains can be engineered with a DC bias. A piezoresponse force microscope is used to characterize the piezoelectric and Ferroelectric behavior. The piezoresponse correlates with the orientation of the crystal lattice as expected for unconfined crystal, and a complex micro- and nano-scale Ferroelectric Domain structure of the as-grown crystals is revealed.

  • intermittency quasiperiodicity and chaos in probe induced Ferroelectric Domain switching
    Nature Physics, 2014
    Co-Authors: Anton V Ievlev, Stephen Jesse, Anna N Morozovska, Evgheni Strelcov, Eugene A Eliseev, Yuriy V Pershin, Amit Kumar, Ya V Shur, Sergei V Kalinin
    Abstract:

    Ferroelectric Domain switching on the surface of a lithium niobate thin film can be induced by the tip of a scanning probe microscope, and gives rise to both regular and chaotic spatiotemporal patterns. Moreover, the long-range interactions that govern these phenomena can be tuned by varying temperature, humidity, Domain spacing and tip bias.

  • dynamic conductivity of Ferroelectric Domain walls in bifeo3
    Nano Letters, 2011
    Co-Authors: Peter Maksymovych, Jan Seidel, Sergei V Kalinin, Yinghao Chu, Arthur P Baddorf, Longqing Chen, R Ramesh
    Abstract:

    Topological walls separating Domains of continuous polarization, magnetization, and strain in ferroic materials hold promise of novel electronic properties, that are intrinsically localized on the nanoscale and that can be patterned on demand without change of material volume or elemental composition. We have revealed that Ferroelectric Domain walls in multiferroic BiFeO3 are inherently dynamic electronic conductors, closely mimicking memristive behavior and contrary to the usual assumption of rigid conductivity. Applied electric field can cause a localized transition between insulating and conducting Domain walls, tune Domain wall conductance by over an order of magnitude, and create a quasicontinuous spectrum of metastable conductance states. Our measurements identified that subtle and microscopically reversible distortion of the polarization structure at the Domain wall is at the origin of the dynamic conductivity. The latter is therefore likely to be a universal property of topological defects in ferr...

  • quantitative piezoelectric force microscopy influence of tip shape size and contact geometry on the nanoscale resolution of an antiparallel Ferroelectric Domain wall
    arXiv: Materials Science, 2008
    Co-Authors: L Tian, Anna N Morozovska, Eugene A Eliseev, Sergei V Kalinin, A Vasudevarao, Venkatraman Gopalan
    Abstract:

    The structure of a single antiparallel Ferroelectric Domain wall in LiNbO3 is quantitatively mapped by piezoelectric force microscopy (PFM) with calibrated probe geometry. The PFM measurements are performed for 49 probes with the radius varying from 10 to 300 nm. The magnitude and variation of the experimental piezoelectric coefficient across a Domain wall matches the profiles calculated from a comprehensive analytical theory, as well as 3-dimensional finite element method simulations. Quantitative agreement between experimental and theoretical profile widths is obtained only when a finite disk-type tip radius that is in true contact with the sample surface is considered, which is in agreement with scanning electron microscopy images of the actual tips after imaging. The magnitude of the piezoelectric coefficient is shown to be independent of the tip radius, and the PFM profile width is linearly proportional to the tip radius. Finally we demonstrate a method to extract any intrinsic material broadening of the Ferroelectric wall width. Surprisingly wide wall widths of 20- 200nm are observed.

  • review of Ferroelectric Domain imaging by piezoresponse force microscopy
    2007
    Co-Authors: A L Kholkin, Sergei V Kalinin, Andreas Roelofs, Alexei Gruverman
    Abstract:

    This chapter describes the principles, theoretical background, recent developments, and applications of a local probe-based technique for nondestructive high-resolution Ferroelectric Domain imaging and manipulation—piezoresponse force microscopy (PFM). This technique has proven to be a powerful tool for the characterization of Ferroelectric thin films, ceramics, and single crystals. Recent advances in application of PFM for studying a mechanism of polarization reversal at the nanoscale, Domain dynamics, degradation effects, and size-dependent phenomena in Ferroelectrics are reviewed in detail. Examples of using PFM for the characterization of various polar materials such as Ferroelectric films, piezoelectric semiconductors, and Ferroelectric relaxors are given.

E Soergel - One of the best experts on this subject based on the ideXlab platform.

  • enhanced electro optic response in Domain engineered linbo3 channel waveguides
    Applied Physics Letters, 2016
    Co-Authors: G Zisis, E Soergel, C Y J Ying, Pranabendu Ganguly, C L Sones, R W Eason, S Mailis
    Abstract:

    Substantial enhancement (36.7%) of the intrinsic electro-optic coefficient (r_33) has been observed in lithium niobate channel waveguides, which are made to overlap with a pole-inhibited Ferroelectric Domain. The waveguide and the overlapping Ferroelectric Domain are both produced by a single UV irradiation process and are thus self-aligning. The enhancement of the electro-optic coefficient effect is attributed to strain, which is associated with the Ferroelectric Domain boundaries that contain the channel waveguide.

  • quantitative analysis of Ferroelectric Domain imaging with piezoresponse force microscopy
    Applied Physics Letters, 2006
    Co-Authors: T Jungk, Akos Hoffmann, E Soergel
    Abstract:

    The contrast mechanism for Ferroelectric Domain imaging via piezoresponse force microscopy (PFM) is investigated. A vectorial description of PFM measurements is presented which takes into account the background caused by the experimental setup. This allows a quantitative, frequency independent analysis of the Domain contrast which is in good agreement with the expected values for the piezoelectric deformation of the sample and satisfies the generally required features of PFM imaging.

Longqing Chen - One of the best experts on this subject based on the ideXlab platform.

  • facilitation of Ferroelectric switching via mechanical manipulation of hierarchical nanoscale Domain structures
    Physical Review Letters, 2017
    Co-Authors: Zibin Chen, Haosu Luo, Feifei Wang, Simon P. Ringer, Longqing Chen, Liang Hong, X Z Liao
    Abstract:

    Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanoDomains via mechanical loading and its effect on facilitating Ferroelectric Domain switching in relaxor-based Ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for Ferroelectric Domain switching. Our results advance the fundamental understanding of Ferroelectric Domain switching behavior.

  • On the elastically coupled magnetic and Ferroelectric Domains: A phase-field model
    Applied Physics Letters, 2014
    Co-Authors: Tiannan Yang, Ce-wen Nan, Longqing Chen
    Abstract:

    A phase-field model is developed to study local elastic coupling between magnetic and Ferroelectric Domains that show one-to-one pattern match. A multiferroic layered heterostructure of Co0.4Fe0.6/BaTiO3 is considered as an example. Dynamics of the local elastic coupling is investigated by simulating a time-dependent electric-field driven changes in local magnetization/polarization/strain distributions and by comparing the associated velocities of the magnetic and Ferroelectric Domain walls. It is found that the electric-field-driven dynamic magnetic Domain evolution manifests itself as an alternating occurrence of local magnetization rotation and coupled motion of magnetic and Ferroelectric Domain walls with almost identical velocities.

  • dynamic conductivity of Ferroelectric Domain walls in bifeo3
    Nano Letters, 2011
    Co-Authors: Peter Maksymovych, Jan Seidel, Sergei V Kalinin, Yinghao Chu, Arthur P Baddorf, Longqing Chen, R Ramesh
    Abstract:

    Topological walls separating Domains of continuous polarization, magnetization, and strain in ferroic materials hold promise of novel electronic properties, that are intrinsically localized on the nanoscale and that can be patterned on demand without change of material volume or elemental composition. We have revealed that Ferroelectric Domain walls in multiferroic BiFeO3 are inherently dynamic electronic conductors, closely mimicking memristive behavior and contrary to the usual assumption of rigid conductivity. Applied electric field can cause a localized transition between insulating and conducting Domain walls, tune Domain wall conductance by over an order of magnitude, and create a quasicontinuous spectrum of metastable conductance states. Our measurements identified that subtle and microscopically reversible distortion of the polarization structure at the Domain wall is at the origin of the dynamic conductivity. The latter is therefore likely to be a universal property of topological defects in ferr...

  • effect of grain orientation and grain size on Ferroelectric Domain switching and evolution phase field simulations
    Acta Materialia, 2007
    Co-Authors: S Choudhury, Yulan Li, C E Krill, Longqing Chen
    Abstract:

    Phase field simulations were conducted in order to understand the effect of grain orientation, grain boundary and grain size on Ferroelectric Domain switching, stress distribution and evolution behavior under an applied electric field. Tetragonal Ferroelectric Domains were considered. Hysteresis loops were obtained for a single crystal, a bi-crystal and a polycrystal and the differences in their coercive fields were examined. It was found that the magnitude of the coercive field was closely related to the Domain structures at the maximum electric field. Nucleation of new Domains at a grain boundary led to local high stress. The effect of a reduced Ferroelectric transition temperature at the grain boundary on the polarization distribution, Domain structure and switching was studied.

  • three dimensional computer simulation of Ferroelectric Domain formation
    Journal of the American Ceramic Society, 2005
    Co-Authors: Longqing Chen
    Abstract:

    Three-dimensional (3-D) computer simulations of Ferroelectric Domain formation and evolution were performed, using a computer simulation model based on the time-dependent Ginsburg-Landau equations. A cubic-to-tetragonal Ferroelectric phase transition is considered. It is shown that the initial stage of the transition during the annealing of a quenched cubic paraelectric phase involves the nucleation and growth of the Ferroelectric Domains, followed by the Domain coarsening leading to the formation of 90° and 180° Domain structures. Part of the 3-D results reported here confirm our conclusions made earlier for the two-dimensional (2-D) case, namely, the nonlocal elastic interactions are critical to the formation of twin structure and the dipole-dipole interactions are responsible for the head-to-tail arrangements of dipoles at twin boundaries. In contrast to our previous work, and others; the effect of the depolarization energy was explicitly incorporated into the simulation model. It is found that when there are no surface charges to compensate the Lorentz field due to the polarization charges, and if the system is mechanically clamped, both 90° and 180° Domains are thermodynamically stable.

Manfred Fiebig - One of the best experts on this subject based on the ideXlab platform.

  • Observation of uncompensated bound charges at improper Ferroelectric Domain walls
    Nano Letters, 2019
    Co-Authors: Peggy Schoenherr, Jakob Schaab, Andres Cano, Mario Hentschel, Konstantin Shapovalov, Manfred Fiebig, Edith Bourret, Massimiliano Stengel, Dennis Meier
    Abstract:

    Low-temperature electrostatic force microscopy (EFM) is used to probe unconventional Domain walls in the improper Ferroelectric semiconductor Er0.99Ca0.01MnO3 down to cryogenic temperatures. The low-temperature EFM maps reveal pronounced electric far fields generated by partially uncompensated Domain-wall bound charges. Positively and negatively charged walls display qualitatively different fields as a function of temperature, which we explain based on different screening mechanisms and the corresponding relaxation time of the mobile carriers. Our results demonstrate Domain walls in improper Ferroelectrics as a unique example of natural interfaces that are stable against the emergence of electrically uncompensated bound charges. The outstanding robustness of improper Ferroelectric Domain walls in conjunction with their electronic versatility brings us an important step closer to the development of durable and ultrasmall electronic components for next-generation nanotechnology.

  • conductivity contrast and tunneling charge transport in the vortexlike Ferroelectric Domain patterns of multiferroic hexagonal ymno3
    Physical Review Letters, 2017
    Co-Authors: E Ruff, Manfred Fiebig, S Krohns, Martin Lilienblum, Dennis Meier, P Lunkenheimer, A Loidl
    Abstract:

    We deduce the intrinsic conductivity properties of the Ferroelectric Domain walls around the topologically protected Domain vortex cores in multiferroic YMnO_{3}. This is achieved by performing a careful equivalent-circuit analysis of dielectric spectra measured in single-crystalline samples with different vortex densities. The conductivity contrast between the bulk Domains and the less conducting Domain boundaries is revealed to reach up to a factor of 500 at room temperature, depending on the sample preparation. Tunneling of localized defect charge carriers is the dominant charge-transport process in the Domain walls that are depleted of mobile charge carriers. This work demonstrates that, via equivalent-circuit analysis, dielectric spectroscopy can provide valuable information on the intrinsic charge-transport properties of Ferroelectric Domain walls, which is of high relevance for the design of new Domain-wall-based microelectronic devices.

  • probing Ferroelectric Domain engineering in bifeo3 thin films by second harmonic generation
    Advanced Materials, 2015
    Co-Authors: Morgan Trassin, Gabriele De Luca, Sebastian Manz, Manfred Fiebig
    Abstract:

    An optical probe of Ferroelectric Domain distribution and manipulation in BiFeO₃ thin films is reported using optical second harmonic generation. A unique relation between the Domain distribution and its integral symmetry is established. The Ferroelectric signature is even resolved when the film is covered by a top electrode. The effect of voltage-induced Ferroelectric switching is imaged.

  • Polarization control at spin-driven Ferroelectric Domain walls.
    Nature Communications, 2015
    Co-Authors: Naëmi Leo, Andres Cano, Manfred Fiebig, Anders Bergman, Narayan Poudel, Bernd Lorenz, Dennis Meier
    Abstract:

    Unusual electronic states arise at Ferroelectric Domain walls due to the local symmetry reduction, strain gradients and electrostatics. This particularly applies to improper Ferroelectrics, where the polarization is induced by a structural or magnetic order parameter. Because of the subordinate nature of the polarization, the rigid mechanical and electrostatic boundary conditions that constrain Domain walls in proper ferroics are lifted. Here we show that spin-driven Ferroelectricity promotes the emergence of charged Domain walls. This provides new degrees of flexibility for controlling Domain-wall charges in a deterministic and reversible process. We create and position a Domain wall by an electric field in Mn0.95Co0.05WO4. With a magnetic field we then rotate the polarization and convert neutral into charged Domain walls, while its magnetic properties peg the wall to its location. Using atomistic Landau-Lifshitz-Gilbert simulations we quantify the polarization changes across the two wall types and highlight their general occurrence.

Z. Yan - One of the best experts on this subject based on the ideXlab platform.

  • electrical half wave rectification at Ferroelectric Domain walls
    Nature Nanotechnology, 2018
    Co-Authors: Jakob Schaab, A. Cano, Megan E. Holtz, Z. Yan, S Krohns, Martin Lilienblum, Sandra H Skjaervo, Xiaoyu Dai
    Abstract:

    Domain walls in Ferroelectric semiconductors show promise as multifunctional two-dimensional elements for next-generation nanotechnology. Electric fields, for example, can control the direct-current resistance and reversibly switch between insulating and conductive Domain-wall states, enabling elementary electronic devices such as gates and transistors. To facilitate electrical signal processing and transformation at the Domain-wall level, however, an expansion into the realm of alternating-current technology is required. Here, we demonstrate diode-like alternating-to-direct current conversion based on neutral Ferroelectric Domain walls in ErMnO3. By combining scanning probe and dielectric spectroscopy, we show that the rectification occurs at the tip–wall contact for frequencies at which the walls are effectively pinned. Using density functional theory, we attribute the responsible transport behaviour at the neutral walls to an accumulation of oxygen defects. The practical frequency regime and magnitude of the direct current output are controlled by the bulk conductivity, establishing electrode–wall junctions as versatile atomic-scale diodes.

  • Imaging and characterization of conducting Ferroelectric Domain walls by photoemission electron microscopy
    Applied Physics Letters, 2014
    Co-Authors: Jakob Schaab, Andres Cano, Ingo P. Krug, F. Nickel, Daniel M. Gottlob, Hatice Doğanay, Mario Hentschel, Z. Yan, Edith Bourret-courchesne, Claus Michael Schneider
    Abstract:

    High-resolution X-ray photoemission electron microscopy (X-PEEM) is a well-established method for imaging Ferroelectric Domain structures. Here, we expand the scope of application of X-PEEM and demonstrate its capability for imaging and investigating Domain walls in Ferroelectrics with high-spatial resolution. Using ErMnO3 as test system, we show that Ferroelectric Domain walls can be visualized based on photo-induced charging effects and local variations in their electronic conductance can be mapped by analyzing the energy distribution of photoelectrons. Our results open the door for non-destructive, contract-free, and element-specific studies of the electronic and chemical structure at Domain walls in Ferroelectrics.