The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform

Zhiliang Zhang - One of the best experts on this subject based on the ideXlab platform.

  • controllable synthesis and sintering of silver nanoparticles for inkjet printed Flexible Electronics
    Journal of Alloys and Compounds, 2015
    Co-Authors: Zhiliang Zhang
    Abstract:

    An effective and facile strategy was developed to successfully synthesize nearly uniform silver nanoparticles (AgNPs) with particle size of <10 nm, and demonstrated to achieve the sintering of AgNPs at room temperature for inkjet-printed Flexible Electronics. In such system, a series of different chain-length alkylamines were exploited as capped molecules to controllable synthesis of uniform AgNPs with the mean nanoparticle size in rang of 8.6 +/- 0.9, 8.9 +/- 1.2 and 9.2 +/- 1.6 nm, and these ultra-small nanoparticles were very favorable to attain an excellent printing fluency. Based on the as-synthesized AgNPs, a sequence of Flexible electrocircuits was successfully fabricated by ink-jet printing technique. After the dipped treatment, the printed AgNPs were achieved to spontaneous coalescence and aggregation at room temperature induced by preferential dissolution of capped molecules on AgNPs surfaces into methanol solution. These aggregated AgNPs demonstrated superior controllability, excellent stability and low resistivity in the range of 31.6-26.5 mu Omega cm, and would have enormous potential in the application to be tailored for assembly of optoElectronics devices. (C) 2015 Elsevier B.V. All rights reserved.

  • controllable synthesis of silver nanoparticles in hyperbranched macromolecule templates for printed Flexible Electronics
    RSC Advances, 2015
    Co-Authors: Zhiliang Zhang, Huayong Zhang
    Abstract:

    In this work, a series of different generation hyperbranched macromolecules were synthesized and exploited for the template-directed synthesis of silver nanoparticles (AgNPs). The results obtained from UV-vis spectra, transmission electron microscopy and scanning electron microscopy images showed that the synthesized AgNPs was nearly uniform, monodisperse and the mean AgNP size was 31.2 ± 3.6, 25.6 ± 2.7 and 21.8 ± 2.2 nm, corresponding to the respective generation of hyperbranched macromolecules employed. Based on the as-synthesized AgNPs, a sequence of Flexible electrocircuits were successfully fabricated by ink-jet printing technique and exhibited very low resistivity in the range of 8.26 × 10−8–7.62 × 10−8 Ω m after laser sintering treatment. This method provided a facile and efficient strategy to synthesize uniform and monodisperse AgNPs, and would have enormous potential in applications for Flexible Electronics, electrochemical devices and biosensor assembly.

Powen Chiu - One of the best experts on this subject based on the ideXlab platform.

  • van der waals epitaxy of functional moo2 film on mica for Flexible Electronics
    Applied Physics Letters, 2016
    Co-Authors: Thi Hien Do, Thai Duy Ha, Q Zhan, Jenhyih Juang, Qing He, Elke Arenholz, Powen Chiu
    Abstract:

    Flexible Electronics have a great potential to impact consumer Electronics and with that our daily life. Currently, no direct growth of epitaxial functional oxides on commercially available Flexible substrates is possible. In this study, in order to address this challenge, muscovite, a common layered oxide, is used as a Flexible substrate that is chemically similar to typical functional oxides. We fabricated epitaxial MoO2 films on muscovite via pulsed laser deposition technique. A combination of X-ray diffraction and transmission electron microscopy confirms van der Waals epitaxy of the heterostructures. The electrical transport properties of MoO2 films are similar to those of the bulk. Flexible or free-standing MoO2 thin film can be obtained and serve as a template to integrate additional functional oxide layers. Our study demonstrates a remarkable concept to create Flexible Electronics based on functional oxides.

Ravinder Dahiya - One of the best experts on this subject based on the ideXlab platform.

  • van der waals contact engineering of graphene field effect transistors for large area Flexible Electronics
    ACS Nano, 2019
    Co-Authors: William Taube Navaraj, Nivasan Yogeswaran, Duncan H Gregory, Ravinder Dahiya
    Abstract:

    Graphene has great potential for high-performance Flexible Electronics. Although studied for more than a decade, contacting graphene efficiently, especially for large-area, Flexible Electronics, is still a challenge. Here, by engineering the graphene–metal van der Waals (vdW) contact, we demonstrate that ultralow contact resistance is achievable via a bottom-contact strategy incorporating a simple transfer process without any harsh thermal treatment (>150 °C). The majority of the fabricated devices show contact resistances below 200 Ω·μm with values as low as 65 Ω·μm achievable. This is on par with the state-of-the-art top- and edge-contacted graphene field-effect transistors. Further, our study reveals that these contacts, despite the presumed weak nature of the vdW interaction, are stable under various bending conditions, thus guaranteeing compatibility with Flexible Electronics with improved performance. This work illustrates the potential of the previously underestimated vdW contact approach for large...

  • Ultra-thin chips for high-performance Flexible Electronics
    npj Flexible Electronics, 2018
    Co-Authors: Shoubhik Gupta, Leandro Lorenzelli, William Taube Navaraj, Ravinder Dahiya
    Abstract:

    Flexible Electronics has significantly advanced over the last few years, as devices and circuits from nanoscale structures to printed thin films have started to appear. Simultaneously, the demand for high-performance Electronics has also increased because Flexible and compact integrated circuits are needed to obtain fully Flexible electronic systems. It is challenging to obtain Flexible and compact integrated circuits as the silicon based CMOS Electronics, which is currently the industry standard for high-performance, is planar and the brittle nature of silicon makes bendability difficult. For this reason, the ultra-thin chips from silicon is gaining interest. This review provides an in-depth analysis of various approaches for obtaining ultra-thin chips from rigid silicon wafer. The comprehensive study presented here includes analysis of ultra-thin chips properties such as the electrical, thermal, optical and mechanical properties, stress modelling, and packaging techniques. The underpinning advances in areas such as sensing, computing, data storage, and energy have been discussed along with several emerging applications (e.g., wearable systems, m-Health, smart cities and Internet of Things etc.) they will enable. This paper is targeted to the readers working in the field of integrated circuits on thin and bendable silicon; but it can be of broad interest to everyone working in the field of Flexible Electronics.

Surya Prakash Singh - One of the best experts on this subject based on the ideXlab platform.

  • copper conductive inks synthesis and utilization in Flexible Electronics
    RSC Advances, 2015
    Co-Authors: Venkata Abhinav K, P.s. Karthik, Surya Prakash Singh, Venkata Krishna Rao R
    Abstract:

    Conductive inks are a recent advance in Electronics and have promising future applications in Flexible Electronics and smart applications. In this review we tried to focus on a particular conductive ink that is based on copper nanoparticles. Although extensive research is being done all over the world, a few complications are yet to be perfectly solved. We tried to focus on some of the complications involved in their synthesis and their various applications in the different fields of science. Conductive inks have promising applications in the present trends of science and technology. The main intention behind this review is to list some of the best methods to synthesize copper nanoparticles according to the method of synthesizing them. We chose copper nanoparticle synthesis and the preparation of conductive inks because copper is a very abundant material, possesses high conductivity (after silver), and it has huge potential to replace expensive conductive inks made of silver, graphene, CNTs, etc. The other reason behind focussing on copper is its properties, such as ductility, malleability, thermal dissipation activity, anti-microbial nature, etc. In this review, we have listed some of the best methods of synthesizing copper conductive inks and their usage in various printing techniques. Different methods of sintering for the obtained conductive patterns are also included.

  • Conductive silver inks and their applications in printed and Flexible Electronics
    RSC Adv., 2015
    Co-Authors: R. Venkata Krishna Rao, K. Venkata Abhinav, Venkata Krishna R Rao, Venkata K Abhinav, P.s. Karthik, Surya Prakash Singh
    Abstract:

    Conductive inks have been widely investigated in recent years due to their popularity in printed Electronics (PE) and Flexible Electronics (FE). They comprise specific and unique applications that belong to a whole new level of future technology. In this context, silver is a keenly researched material for its promising application in conductive inks. In printing technology, silver conductive inks have a major role in electronic applications. The emerging integration of different technologies is in the form of silver nanoinks. In recent years, the printed Electronics market has been dominated by expensive materials such as gold, platinum, etc., which result in costly and complex instruments. To overcome these drawbacks, silver conductive inks can serve as alternative to the current technology. Presently, printed circuit boards (PCBs) use complex and expensive techniques to fabricate the circuit boards, which in turn increases the overall cost. Solvent-based silver conductive inks are capable of substituting PCB technology while reducing the cost of manufacturing. Due to their stellar reputation, investors are looking forward to applying this technology in printed Electronics industries.

Weidong Zhou - One of the best experts on this subject based on the ideXlab platform.

  • Fast Flexible Electronics with strained silicon nanomembranes
    Scientific Reports, 2013
    Co-Authors: Han Zhou, Jung-hun Seo, Weidong Zhou, Deborah M. Paskiewicz, Ye Zhu, George K. Celler, Paul M. Voyles, Max G. Lagally
    Abstract:

    Fast Flexible Electronics operating at radio frequencies (>1 GHz) are more attractive than traditional Flexible Electronics because of their versatile capabilities, dramatic power savings when operating at reduced speed and broader spectrum of applications. Transferrable single-crystalline Si nanomembranes (SiNMs) are preferred to other materials for Flexible Electronics owing to their unique advantages. Further improvement of Si-based device speed implies significant technical and economic advantages. While the mobility of bulk Si can be enhanced using strain techniques, implementing these techniques into transferrable single-crystalline SiNMs has been challenging and not demonstrated. The past approach presents severe challenges to achieve effective doping and desired material topology. Here we demonstrate the combination of strained- NM-compatible doping techniques with self-sustained-strain sharing by applying a strain-sharing scheme between Si and SiGe multiple epitaxial layers, to create strained print-transferrable SiNMs. We demonstrate a new speed record of Si-based Flexible Electronics without using aggressively scaled critical device dimensions.

  • fast Flexible Electronics using transferrable silicon nanomembranes
    Journal of Physics D, 2012
    Co-Authors: Kan Zhang, Jung-hun Seo, Weidong Zhou
    Abstract:

    A systematic review, covering the aspects of material preparation, device fabrication and process integration, is provided for Flexible Electronics operating in high-frequency domain based on transferrable monocrystalline silicon (Si) nanomembranes (NM). Previously demonstrated methods of releasing Si NM from silicon-on-insulator source substrates and transferring it to Flexible substrates are briefly described. Due to the processing temperature limitation of most Flexible substrates, a pre-release NM selective doping scheme is used for Si NMs. With proper selections of ion implantation energy and dose, fully doped Si NMs across their entire thickness with very low sheet resistivity can be obtained, allowing flip transfer of the NMs for backside and even double side processing. A general conclusion of preferred low implantation energy for shallower depth ion implantation is identified. The evolvement of radio frequency (RF) Flexible Si thin-film transistor (TFT) structures is described in detail. The continuous performance enhancement of TFTs owing to process and TFT structure innovations is analysed. Demonstrations of Flexible Si RF switches and RF inductors and capacitors are also briefly reviewed as valuable components of the general Flexible device family, some of which also benefit from the pre-release NM doping technique. With the proved feasibility of these basic RF elements and related processing techniques, more complicated Flexible RF circuits can be expected. Future research directions are also discussed, including further enhancement of device performance, building more types of semiconductor devices on Flexible substrates, and process integration for Flexible circuits and systems.

  • 12 ghz thin film transistors on transferrable silicon nanomembranes for high performance Flexible Electronics
    Small, 2010
    Co-Authors: Lei Sun, Jung-hun Seo, George K. Celler, Guoxuan Qin, Weidong Zhou
    Abstract:

    Multigigahertz Flexible Electronics are attractive and have broad applications. A gate-after-source/drain fabrication process using preselectively doped single-crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 μm channel alignment for the SiNMs on a soft plastic substrate, thin-film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high-performance Flexible Electronics.