The Experts below are selected from a list of 106545 Experts worldwide ranked by ideXlab platform
Christophe Gaquiere - One of the best experts on this subject based on the ideXlab platform.
-
High Frequency Characterization of Compact N+Poly/Nwell Varactor Using Waffle-Layout
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2008Co-Authors: Y. Morandini, J.-f. Larchanche, Christophe GaquiereAbstract:The high Frequency Characterization of a new waffle layout for N+Poly/Nwell varactor has been studied in STMicroelectronics 65 nm CMOS process. We compare this new waffle layout with model of standard multifingers varactor. In addition to the area saving, the waffle MOS varactor also provides enhancement to the RF merit figure of varactor through the serial resistance and substrate capacitance improvement.
-
Differential P+/Nwell varactor High Frequency Characterization
2007 IEEE International Conference on Microelectronic Test Structures, 2007Co-Authors: Y. Morandini, J.-f. Larchanche, D. Rapisarda, Christophe GaquiereAbstract:Here we report, the evaluation of two differential integrated diode varactor layouts. For a first time, differential structures connected to an integrated BalUn are characterized with a two ports vector network analyzer (VNA). Limitations of this method lead us to use four ports measurements. Results reveal the best layout for differential implementation and the sensitivity to common mode.
Y. Morandini - One of the best experts on this subject based on the ideXlab platform.
-
High Frequency Characterization of Compact N+Poly/Nwell Varactor Using Waffle-Layout
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2008Co-Authors: Y. Morandini, J.-f. Larchanche, Christophe GaquiereAbstract:The high Frequency Characterization of a new waffle layout for N+Poly/Nwell varactor has been studied in STMicroelectronics 65 nm CMOS process. We compare this new waffle layout with model of standard multifingers varactor. In addition to the area saving, the waffle MOS varactor also provides enhancement to the RF merit figure of varactor through the serial resistance and substrate capacitance improvement.
-
Differential P+/Nwell varactor High Frequency Characterization
2007 IEEE International Conference on Microelectronic Test Structures, 2007Co-Authors: Y. Morandini, J.-f. Larchanche, D. Rapisarda, Christophe GaquiereAbstract:Here we report, the evaluation of two differential integrated diode varactor layouts. For a first time, differential structures connected to an integrated BalUn are characterized with a two ports vector network analyzer (VNA). Limitations of this method lead us to use four ports measurements. Results reveal the best layout for differential implementation and the sensitivity to common mode.
Lotfi Senhadji - One of the best experts on this subject based on the ideXlab platform.
-
Time-Frequency Characterization of interdependencies in nonstationary signals: application to epileptic EEG.
IEEE Transactions on Biomedical Engineering, 2017Co-Authors: Karim Ansari-asl, Fabrice Bartolomei, Jean-jacques Bellanger, Fabrice Wendling, Lotfi SenhadjiAbstract:For the past decades, numerous works have been dedicated to the development of signal processing methods aimed at measuring the degree of association between electroencephalographic (EEG) signals. This interdependency parameter, which may be defined in various ways, is often used to characterize a functional coupling between different brain structures or regions during either normal or pathological processes. In this paper, we focus on the time-Frequency Characterization of the interdependency between signals. Particularly, we propose a novel estimator of the linear relationship between nonstationary signals based on the cross correlation of narrow band filtered signals. This estimator is compared to a more classical estimator based on the coherence function. In a simulation framework, results show that it may exhibit better statistical performances (bias and variance or mean square error) when a priori knowledge about time delay between signals is available. On real data (intracerebral EEG signals), results show that this estimator may also enhance the readability of the time-Frequency representation of relationship and, thus, can improve the interpretation of nonstationary interdependencies in EEG signals. Finally, we illustrate the importance of characterizing the relationship in both time and Frequency domains by comparing with Frequency-independent methods (linear and nonlinear).
B K Gilbert - One of the best experts on this subject based on the ideXlab platform.
-
high Frequency Characterization of power ground plane structures
IEEE Transactions on Microwave Theory and Techniques, 1999Co-Authors: Robert W Techentin, B K GilbertAbstract:In this paper, we describe a strategy to characterize power and ground-plane structures using a full cavity-mode Frequency-domain resonator model. We develop insights into modal analysis and introduce a novel technique to suppress modal impedances, minimizing both transfer and input impedances. The influence of port locations on the Z matrix is evaluated.
-
High-Frequency Characterization of power/ground-plane structures
IEEE Transactions on Microwave Theory and Techniques, 1999Co-Authors: Guang-tsai Lei, Robert W Techentin, B K GilbertAbstract:In this paper, we describe a strategy to characterize power and ground-plane structures using a full cavity-mode Frequency-domain resonator model. We develop insights into modal analysis and introduce a novel technique to suppress modal impedances, minimizing both transfer and input impedances. The influence of port locations on the Z matrix is evaluated.
Linda C. Smith - One of the best experts on this subject based on the ideXlab platform.
-
High Frequency Characterization of small geometry bipolar transistors
Proceedings of the 1988 Bipolar Circuits and Technology Meeting, 1Co-Authors: Paul J. Van Wijnen, Linda C. SmithAbstract:Small-signal high-Frequency measurements of small bipolar transistors, carried out 'on wafer' up to a Frequency of 18 GHz, are presented. Current gain, transconductance, and maximum power gain characteristics as a function of Frequency and DC bias conditions have been obtained with accurate calibration and correction techniques. The figures of merit, f/sub t/f/sub y/, and f/sub max/, associated with these characteristics have been discussed, and a simplified analysis of the relevant time constants has been given. Simulation results with a modified Gummel/Poon model show that good high-Frequency modeling can be achieved by taking into account the current dependence of the base resistance and the base transit time, and the modeling of excess phase shift. Finally the importance of modeling the distributed base-collector capacitance, which is accomplished in the Gummel/Poon model with the parameter x/sub cjc/, has been emphasized. It is very important even for frequencies well below the cutoff Frequency. >