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Z. Ye - One of the best experts on this subject based on the ideXlab platform.
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epitaxial growth of antiphase boundary free Gaas Layer on 300 mm si 001 substrate by metalorganic chemical vapour deposition with high mobility
APL Materials, 2016Co-Authors: R Alcotte, Y Bogumilowicz, R Cipro, J Moeyaert, Errol Antonio C Sanchez, M. Martin, S David, F Bassani, F Ducroquet, Z. YeAbstract:Metal organic chemical vapor deposition of Gaas on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial Gaas films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The Gaas Layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active Layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.
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anti phase boundaries free Gaas epiLayers on quasi nominal ge buffered silicon substrates
Applied Physics Letters, 2015Co-Authors: Y Bogumilowicz, R Cipro, R Alcotte, Franck Bassani, J Moeyaert, Z. Ye, J.-m. Hartmann, M. Martin, T Baron, Errol Antonio C SanchezAbstract:We have obtained Anti-Phase Boundary (APB) free Gaas epiLayers on “quasi-nominal” (001) silicon substrates, while using a thick germanium strain relaxed buffer between the Gaas Layer and the silicon substrate in order to accommodate the 4% lattice mismatch between the two. As silicon (001) substrates always have a small random offcut angle from their nominal surface plane, we call them “quasi-nominal.” We have focused on the influence that this small (≤0.5°) offcut angle has on the Gaas epiLayer properties, showing that it greatly influences the density of APBs. On 0.5° offcut substrates, we obtained smooth, slightly tensile strained (R = 106%) Gaas epiLayers that were single domain (e.g., without any APB), showing that it is not necessary to use large offcut substrates, typically 4° to 6°, for Gaas epitaxy on silicon. These make the Gaas Layers more compatible with the existing silicon manufacturing technology that uses “quasi-nominal” substrates.
R Alcotte - One of the best experts on this subject based on the ideXlab platform.
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epitaxial growth of antiphase boundary free Gaas Layer on 300 mm si 001 substrate by metalorganic chemical vapour deposition with high mobility
APL Materials, 2016Co-Authors: R Alcotte, Y Bogumilowicz, R Cipro, J Moeyaert, Errol Antonio C Sanchez, M. Martin, S David, F Bassani, F Ducroquet, Z. YeAbstract:Metal organic chemical vapor deposition of Gaas on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial Gaas films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The Gaas Layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active Layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.
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anti phase boundaries free Gaas epiLayers on quasi nominal ge buffered silicon substrates
Applied Physics Letters, 2015Co-Authors: Y Bogumilowicz, R Cipro, R Alcotte, Franck Bassani, J Moeyaert, Z. Ye, J.-m. Hartmann, M. Martin, T Baron, Errol Antonio C SanchezAbstract:We have obtained Anti-Phase Boundary (APB) free Gaas epiLayers on “quasi-nominal” (001) silicon substrates, while using a thick germanium strain relaxed buffer between the Gaas Layer and the silicon substrate in order to accommodate the 4% lattice mismatch between the two. As silicon (001) substrates always have a small random offcut angle from their nominal surface plane, we call them “quasi-nominal.” We have focused on the influence that this small (≤0.5°) offcut angle has on the Gaas epiLayer properties, showing that it greatly influences the density of APBs. On 0.5° offcut substrates, we obtained smooth, slightly tensile strained (R = 106%) Gaas epiLayers that were single domain (e.g., without any APB), showing that it is not necessary to use large offcut substrates, typically 4° to 6°, for Gaas epitaxy on silicon. These make the Gaas Layers more compatible with the existing silicon manufacturing technology that uses “quasi-nominal” substrates.
Errol Antonio C Sanchez - One of the best experts on this subject based on the ideXlab platform.
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epitaxial growth of antiphase boundary free Gaas Layer on 300 mm si 001 substrate by metalorganic chemical vapour deposition with high mobility
APL Materials, 2016Co-Authors: R Alcotte, Y Bogumilowicz, R Cipro, J Moeyaert, Errol Antonio C Sanchez, M. Martin, S David, F Bassani, F Ducroquet, Z. YeAbstract:Metal organic chemical vapor deposition of Gaas on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial Gaas films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The Gaas Layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active Layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.
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anti phase boundaries free Gaas epiLayers on quasi nominal ge buffered silicon substrates
Applied Physics Letters, 2015Co-Authors: Y Bogumilowicz, R Cipro, R Alcotte, Franck Bassani, J Moeyaert, Z. Ye, J.-m. Hartmann, M. Martin, T Baron, Errol Antonio C SanchezAbstract:We have obtained Anti-Phase Boundary (APB) free Gaas epiLayers on “quasi-nominal” (001) silicon substrates, while using a thick germanium strain relaxed buffer between the Gaas Layer and the silicon substrate in order to accommodate the 4% lattice mismatch between the two. As silicon (001) substrates always have a small random offcut angle from their nominal surface plane, we call them “quasi-nominal.” We have focused on the influence that this small (≤0.5°) offcut angle has on the Gaas epiLayer properties, showing that it greatly influences the density of APBs. On 0.5° offcut substrates, we obtained smooth, slightly tensile strained (R = 106%) Gaas epiLayers that were single domain (e.g., without any APB), showing that it is not necessary to use large offcut substrates, typically 4° to 6°, for Gaas epitaxy on silicon. These make the Gaas Layers more compatible with the existing silicon manufacturing technology that uses “quasi-nominal” substrates.
Masayoshi Umeno - One of the best experts on this subject based on the ideXlab platform.
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growth and characterization of Gaas epitaxial Layers on si porous si si substrate by chemical beam epitaxy
Journal of Applied Physics, 2001Co-Authors: S Saravanan, Tetsuo Soga, Masayoshi Umeno, Takashi Jimbo, Yasuhiko Hayashi, Nobuhiko Sato, Takao YoneharaAbstract:The initial growth of Gaas films on a Si/porous Si/Si (SPS) substrate has been investigated using reflection high-energy electron diffraction. The morphology and the thickness have been examined by a Nomarski optical microscope and scanning electron microscope, respectively. The results of the low temperature photoluminescence studies have shown that a significant reduction in the residual thermal tensile stress can be achieved with reduced growth temperature. The 77 K photoluminescence spectra for Gaas/Si show a strain-induced splitting between the heavy and light hole valence bands which corresponds to a biaxial tensile stress of 2.45 kbar acting on the Gaas Layer where the same for Gaas/SPS grown at 450 °C is 1.69 kbar. The results have shown that a SPS substrate with the combination of low temperature growth is a promising candidate for obtaining Gaas films with low stress.
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growth of stress released Gaas on Gaas si structure by metalorganic chemical vapor deposition
Applied Physics Letters, 2000Co-Authors: Tetsuo Soga, Takehito Jimbo, Justin Arokiaraj, Masayoshi UmenoAbstract:A stress-released Gaas Layer was grown on Gaas bonded to Si substrate with the combination of epitaxial lift-off technique and regrowth by metalorganic chemical vapor deposition. The Gaas thin film was bonded to Si substrate using SeS2 and another Gaas Layer was regrown. The photoluminescence peak wavelength and the slope of the time resolved photoluminescence decay of Gaas/Si are almost the same as those of Gaas grown on Gaas substrate.
Y Bogumilowicz - One of the best experts on this subject based on the ideXlab platform.
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epitaxial growth of antiphase boundary free Gaas Layer on 300 mm si 001 substrate by metalorganic chemical vapour deposition with high mobility
APL Materials, 2016Co-Authors: R Alcotte, Y Bogumilowicz, R Cipro, J Moeyaert, Errol Antonio C Sanchez, M. Martin, S David, F Bassani, F Ducroquet, Z. YeAbstract:Metal organic chemical vapor deposition of Gaas on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial Gaas films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The Gaas Layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active Layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.
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anti phase boundaries free Gaas epiLayers on quasi nominal ge buffered silicon substrates
Applied Physics Letters, 2015Co-Authors: Y Bogumilowicz, R Cipro, R Alcotte, Franck Bassani, J Moeyaert, Z. Ye, J.-m. Hartmann, M. Martin, T Baron, Errol Antonio C SanchezAbstract:We have obtained Anti-Phase Boundary (APB) free Gaas epiLayers on “quasi-nominal” (001) silicon substrates, while using a thick germanium strain relaxed buffer between the Gaas Layer and the silicon substrate in order to accommodate the 4% lattice mismatch between the two. As silicon (001) substrates always have a small random offcut angle from their nominal surface plane, we call them “quasi-nominal.” We have focused on the influence that this small (≤0.5°) offcut angle has on the Gaas epiLayer properties, showing that it greatly influences the density of APBs. On 0.5° offcut substrates, we obtained smooth, slightly tensile strained (R = 106%) Gaas epiLayers that were single domain (e.g., without any APB), showing that it is not necessary to use large offcut substrates, typically 4° to 6°, for Gaas epitaxy on silicon. These make the Gaas Layers more compatible with the existing silicon manufacturing technology that uses “quasi-nominal” substrates.
