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Chuan-zhen Zhao - One of the best experts on this subject based on the ideXlab platform.
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Band Gap Energy of the As-rich InxGa1-xBiyAs1-y depending on composition
Infrared Physics & Technology, 2021Co-Authors: Chuan-zhen Zhao, Sha Sha Wang, Tong Wei, Jun WangAbstract:Abstract A model estimating the band Gap Energy of the As-rich InxGa1-xBiyAs1-y is set up. An excellent description is shown. It is found that the In and Bi fractions do not modify the Г valence band maximum (VBM) independently. However, they modify the Г conduction band minimum (CBM) independently. The incorporation of the In fraction in the GaBiyAs1-y alloy will lead to the coupling interaction between the Bi level and the Г CBM of the host material decreasing. It is due to that the Energy difference between the Bi level and the Г VBM of InxGa1-xAs enlarges with increasing In fraction. InxGa1-xBiyAs1-y needs less Bi fraction than GaBiyAs1-y when the spin-orbit splitting Energy surpasses the band Gap Energy. The reason is that incorporating In fraction in GaBiyAs1-y can reduce the band Gap Energy while the spin-orbit splitting Energy almost keeps a constant. In addition, the impurity-host interaction depends on not only the impurity anion fraction, but also the host anion fraction when the impurity anion fraction reaches a certain degree. If there are two or more cations in the alloy, the coupling parameter depending on the cation fraction should be taken into consideration. Based on the existing evidence, it can be concluded that InxGa1-xBiyAs1-y has a direct band Gap in the whole composition range.
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Pressure dependence of the band Gap Energy for dilute nitride and antimony GaNxSbyAs1−x−y
Materials Science-Poland, 2020Co-Authors: Chuan-zhen Zhao, Xiao-dong Sun, He-yu Ren, Sha Sha WangAbstract:AbstractDilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its band Gap Energy depending on pressure can be divided into two regions. In the low pressure range, the band Gap Energy is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum (CBM) of GaAs. The other one is the coupling interaction between the Sb level and the Γ valence band maximum (VBM) of GaAs. In the high pressure range, the band Gap Energy depends also on two factors. One is the coupling interaction between the N level and the X CBM of GaAs. The other one is the coupling interaction between the Sb level and the Γ VBM of GaAs. In addition, it has been found that the Energy difference between the Γ CBM and the X CBM in GaNAsSb is larger than that in GaAs. It is due to two factors. One is the coupling interaction between the N level and the Γ CBM of GaAs. The other is the coupling interaction between the N level and the X CBM of GaAs.
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Band Gap Energy of GaSbxN1-x across the whole composition range
Journal of Physics and Chemistry of Solids, 2020Co-Authors: Chuan-zhen Zhao, Sha Sha Wang, Xiao-dong Sun, Yu Guo, Jun WangAbstract:Abstract A model for the band Gap Energy of GaSbxN1-x across the entire composition range is established. It is found that the model can estimate the band Gap Energy of GaSbxN1-x wonderfully. It is also found that the calculated band Gap minimum in this work is about 0.09 eV at x = 0.82, which indicates that the band Gap Energy of GaSbxN1-x is not negative over the whole composition range. In addition, GaSbxN1-x should have a direct band Gap over the entire composition range.
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The factors determining the band Gap Energy of the As-rich GaBi x As 1- x
Applied Physics A, 2019Co-Authors: Chuan-zhen Zhao, Sha Sha Wang, Tong Wei, Xiao-dong Sun, Jun WangAbstract:The band Gap Energy in the As-rich GaBixAs1−x alloy is studied and a modified model is set up. It is found that the impurity–impurity interaction determined by the Bi pairs and Bi clusters should be taken into consideration. It is also found that when the Bi content increases, the band Gap Energy of GaBixAs1−x goes through from the impurity-like region to the band-like region in the As-rich range. In the impurity-like region, the Г VBM of GaBixAs1−x plays a more important role than the Г CBM in the band Gap reduction. Under this condition, the impurity–host interaction in the valence band should be the most important factor to determine the band Gap Energy. On increasing Bi content, the Г VBM of GaBixAs1−x gradually shows a weaker composition dependence than Г CBM due to the influence of the localized Bi levels. In this case, the most important factor determining the band Gap Energy is the impurity–host interaction in the conduction band.
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Band Gap Energy of ZnO x Se 1− x over the entire composition range
Applied Physics A, 2018Co-Authors: Chuan-zhen Zhao, Sha Sha Wang, Xiao-dong Sun, Si-yu Sun, Jun WangAbstract:A model predicting the band Gap Energy of ZnOxSe1−x over the entire composition range is set up. It is found that the model can provide a good description for the band Gap Energy of ZnOxSe1−x. It is also found that the physical mechanisms for the band Gap evolution in different composition ranges are different. Although the physical mechanism for the band Gap evolution in the Se-rich region differs from that in the O-rich region, the difference between the band Gap reductions in the Se-rich and O-rich regions is not large. In addition, it is found that the band Gap bowing in the middle composition region is smaller than that in the Se-rich and O-rich regions. The reason is that the middle composition region lies in the bandlike region while the Se-rich and the O-rich composition regions lie in the impurity-like region.
T Schmiedel - One of the best experts on this subject based on the ideXlab platform.
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pressure dependence of the band Gap Energy and the conduction band mass for an n type ingaas gaas strained single quantum well
Physica E-low-dimensional Systems & Nanostructures, 1998Co-Authors: E D Jones, S W Tozer, T SchmiedelAbstract:Abstract We report the measurement of the pressure dependence for the band-Gap Energy Eg and conduction-band mass mc for an 80 A-wide n-type In0.20Ga0.80As/GaAs strained-single-quantum well at 4.2 K for pressures between 0 and 35 kbar and fields up to 30 T. The band-Gap Energy Eg, at each pressure, was determined by extrapolating the magnetoluminescence “fan-diagram” to zero magnetic field. The pressure dependence of the band-Gap Energy was found to be quadratic with a linear term of about 10.3 meV/kbar and a small, −2×10 −2 meV / kbar 2 , quadratic contribution. Analyses of the pressure-dependent 4.2 K magnetoluminescence data yield a conduction-band mass logarithmic pressure derivative ∂log (m c )/ ∂ P=0.58% kbar −1 .
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Pressure dependence of the band-Gap Energy and the conduction-band mass for an n-type InGaAs/GaAs strained single-quantum well
Physica E-low-dimensional Systems & Nanostructures, 1998Co-Authors: E D Jones, S W Tozer, T SchmiedelAbstract:Abstract We report the measurement of the pressure dependence for the band-Gap Energy Eg and conduction-band mass mc for an 80 A-wide n-type In0.20Ga0.80As/GaAs strained-single-quantum well at 4.2 K for pressures between 0 and 35 kbar and fields up to 30 T. The band-Gap Energy Eg, at each pressure, was determined by extrapolating the magnetoluminescence “fan-diagram” to zero magnetic field. The pressure dependence of the band-Gap Energy was found to be quadratic with a linear term of about 10.3 meV/kbar and a small, −2×10 −2 meV / kbar 2 , quadratic contribution. Analyses of the pressure-dependent 4.2 K magnetoluminescence data yield a conduction-band mass logarithmic pressure derivative ∂log (m c )/ ∂ P=0.58% kbar −1 .
Harlan U. Anderson - One of the best experts on this subject based on the ideXlab platform.
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The Optical Properties and Band Gap Energy of Nanocrystalline La0.4Sr0.6TiO3 Thin Films
Journal of the American Ceramic Society, 2005Co-Authors: Toshio Suzuki, Vladimir Petrovsky, Piotr Jasinski, Harlan U. AndersonAbstract:The effects of microstructure on the optical properties of La 0.4 Sr 0.6 TiO 3 thin films were investigated. Dense films with the thickness of ∼200 nm and grain size 14-30 nm were produced on monocrystalline sapphire substrates by using a polymeric precursor spin coating technique at annealing temperatures under 800' C. X-ray data showed the formation of a single-phase cubic perovskite-type structure similar to undoped SrTiO 3 for annealing temperatures >500°C. The results of optical measurements showed that the optical spectra varied with the change of the grain size. From these data, the absorption coefficients were calculated and the band Gap Energy determined. In agreement with the quantum confinement model, it was shown that the band Gap Energy increased as the grain size decreased.
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Band Gap Energy in nanocrystalline ZrO2:16%Y thin films
Applied Physics Letters, 1999Co-Authors: Igor Kosacki, Vladimir Petrovsky, Harlan U. AndersonAbstract:The results of optical absorption measurements on nanocrystalline ZrO2:16%Y thin films are presented. Dense 0.7 μm thick films with 1–300 nm grain size have been obtained on sapphire substrate using a polymeric precursor spin coating technique. The relationship between the Energy Gap and microstructure of ZrO2:16%Y has been determined and discussed. The quantum confinement effect was observed at the grain size lower than 100 nm with the band Gap Energy shift of 0.25 eV when the microstructure was changed up to 1 nm. Some limitation of the model has been observed and discussed. The band Gap Energy of 5.62±0.05 eV has been determined as microstructure independent value.
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band Gap Energy in nanocrystalline zro2 16 y thin films
Applied Physics Letters, 1999Co-Authors: Igor Kosacki, Vladimir Petrovsky, Harlan U. AndersonAbstract:The results of optical absorption measurements on nanocrystalline ZrO2:16%Y thin films are presented. Dense 0.7 μm thick films with 1–300 nm grain size have been obtained on sapphire substrate using a polymeric precursor spin coating technique. The relationship between the Energy Gap and microstructure of ZrO2:16%Y has been determined and discussed. The quantum confinement effect was observed at the grain size lower than 100 nm with the band Gap Energy shift of 0.25 eV when the microstructure was changed up to 1 nm. Some limitation of the model has been observed and discussed. The band Gap Energy of 5.62±0.05 eV has been determined as microstructure independent value.
E D Jones - One of the best experts on this subject based on the ideXlab platform.
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pressure dependence of the band Gap Energy and the conduction band mass for an n type ingaas gaas strained single quantum well
Physica E-low-dimensional Systems & Nanostructures, 1998Co-Authors: E D Jones, S W Tozer, T SchmiedelAbstract:Abstract We report the measurement of the pressure dependence for the band-Gap Energy Eg and conduction-band mass mc for an 80 A-wide n-type In0.20Ga0.80As/GaAs strained-single-quantum well at 4.2 K for pressures between 0 and 35 kbar and fields up to 30 T. The band-Gap Energy Eg, at each pressure, was determined by extrapolating the magnetoluminescence “fan-diagram” to zero magnetic field. The pressure dependence of the band-Gap Energy was found to be quadratic with a linear term of about 10.3 meV/kbar and a small, −2×10 −2 meV / kbar 2 , quadratic contribution. Analyses of the pressure-dependent 4.2 K magnetoluminescence data yield a conduction-band mass logarithmic pressure derivative ∂log (m c )/ ∂ P=0.58% kbar −1 .
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Pressure dependence of the band-Gap Energy and the conduction-band mass for an n-type InGaAs/GaAs strained single-quantum well
Physica E-low-dimensional Systems & Nanostructures, 1998Co-Authors: E D Jones, S W Tozer, T SchmiedelAbstract:Abstract We report the measurement of the pressure dependence for the band-Gap Energy Eg and conduction-band mass mc for an 80 A-wide n-type In0.20Ga0.80As/GaAs strained-single-quantum well at 4.2 K for pressures between 0 and 35 kbar and fields up to 30 T. The band-Gap Energy Eg, at each pressure, was determined by extrapolating the magnetoluminescence “fan-diagram” to zero magnetic field. The pressure dependence of the band-Gap Energy was found to be quadratic with a linear term of about 10.3 meV/kbar and a small, −2×10 −2 meV / kbar 2 , quadratic contribution. Analyses of the pressure-dependent 4.2 K magnetoluminescence data yield a conduction-band mass logarithmic pressure derivative ∂log (m c )/ ∂ P=0.58% kbar −1 .
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Determination of the dependence of the band-Gap Energy on composition for Cd1-xZnxTe.
Physical review. B Condensed matter, 1992Co-Authors: J.l. Reno, E D JonesAbstract:We have grown Cd{sub 1{minus}{ital x}}Zn{sub {ital x}}Te layers over the entire composition range (0{le}{ital x}{le}1) by molecular-beam epitaxy on GaAs(100) substrates. The quality of the layers is good near the end points of the alloy range but decreases in the middle as expected. We have obtained a relationship for the band-Gap Energy at 4 K as a function of Zn concentration. This relationship exhibits significantly larger bowing than was previously thought.
Sha Sha Wang - One of the best experts on this subject based on the ideXlab platform.
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Band Gap Energy of the As-rich InxGa1-xBiyAs1-y depending on composition
Infrared Physics & Technology, 2021Co-Authors: Chuan-zhen Zhao, Sha Sha Wang, Tong Wei, Jun WangAbstract:Abstract A model estimating the band Gap Energy of the As-rich InxGa1-xBiyAs1-y is set up. An excellent description is shown. It is found that the In and Bi fractions do not modify the Г valence band maximum (VBM) independently. However, they modify the Г conduction band minimum (CBM) independently. The incorporation of the In fraction in the GaBiyAs1-y alloy will lead to the coupling interaction between the Bi level and the Г CBM of the host material decreasing. It is due to that the Energy difference between the Bi level and the Г VBM of InxGa1-xAs enlarges with increasing In fraction. InxGa1-xBiyAs1-y needs less Bi fraction than GaBiyAs1-y when the spin-orbit splitting Energy surpasses the band Gap Energy. The reason is that incorporating In fraction in GaBiyAs1-y can reduce the band Gap Energy while the spin-orbit splitting Energy almost keeps a constant. In addition, the impurity-host interaction depends on not only the impurity anion fraction, but also the host anion fraction when the impurity anion fraction reaches a certain degree. If there are two or more cations in the alloy, the coupling parameter depending on the cation fraction should be taken into consideration. Based on the existing evidence, it can be concluded that InxGa1-xBiyAs1-y has a direct band Gap in the whole composition range.
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Pressure dependence of the band Gap Energy for dilute nitride and antimony GaNxSbyAs1−x−y
Materials Science-Poland, 2020Co-Authors: Chuan-zhen Zhao, Xiao-dong Sun, He-yu Ren, Sha Sha WangAbstract:AbstractDilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its band Gap Energy depending on pressure can be divided into two regions. In the low pressure range, the band Gap Energy is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum (CBM) of GaAs. The other one is the coupling interaction between the Sb level and the Γ valence band maximum (VBM) of GaAs. In the high pressure range, the band Gap Energy depends also on two factors. One is the coupling interaction between the N level and the X CBM of GaAs. The other one is the coupling interaction between the Sb level and the Γ VBM of GaAs. In addition, it has been found that the Energy difference between the Γ CBM and the X CBM in GaNAsSb is larger than that in GaAs. It is due to two factors. One is the coupling interaction between the N level and the Γ CBM of GaAs. The other is the coupling interaction between the N level and the X CBM of GaAs.
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Band Gap Energy of GaSbxN1-x across the whole composition range
Journal of Physics and Chemistry of Solids, 2020Co-Authors: Chuan-zhen Zhao, Sha Sha Wang, Xiao-dong Sun, Yu Guo, Jun WangAbstract:Abstract A model for the band Gap Energy of GaSbxN1-x across the entire composition range is established. It is found that the model can estimate the band Gap Energy of GaSbxN1-x wonderfully. It is also found that the calculated band Gap minimum in this work is about 0.09 eV at x = 0.82, which indicates that the band Gap Energy of GaSbxN1-x is not negative over the whole composition range. In addition, GaSbxN1-x should have a direct band Gap over the entire composition range.
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The factors determining the band Gap Energy of the As-rich GaBi x As 1- x
Applied Physics A, 2019Co-Authors: Chuan-zhen Zhao, Sha Sha Wang, Tong Wei, Xiao-dong Sun, Jun WangAbstract:The band Gap Energy in the As-rich GaBixAs1−x alloy is studied and a modified model is set up. It is found that the impurity–impurity interaction determined by the Bi pairs and Bi clusters should be taken into consideration. It is also found that when the Bi content increases, the band Gap Energy of GaBixAs1−x goes through from the impurity-like region to the band-like region in the As-rich range. In the impurity-like region, the Г VBM of GaBixAs1−x plays a more important role than the Г CBM in the band Gap reduction. Under this condition, the impurity–host interaction in the valence band should be the most important factor to determine the band Gap Energy. On increasing Bi content, the Г VBM of GaBixAs1−x gradually shows a weaker composition dependence than Г CBM due to the influence of the localized Bi levels. In this case, the most important factor determining the band Gap Energy is the impurity–host interaction in the conduction band.
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Band Gap Energy of ZnO x Se 1− x over the entire composition range
Applied Physics A, 2018Co-Authors: Chuan-zhen Zhao, Sha Sha Wang, Xiao-dong Sun, Si-yu Sun, Jun WangAbstract:A model predicting the band Gap Energy of ZnOxSe1−x over the entire composition range is set up. It is found that the model can provide a good description for the band Gap Energy of ZnOxSe1−x. It is also found that the physical mechanisms for the band Gap evolution in different composition ranges are different. Although the physical mechanism for the band Gap evolution in the Se-rich region differs from that in the O-rich region, the difference between the band Gap reductions in the Se-rich and O-rich regions is not large. In addition, it is found that the band Gap bowing in the middle composition region is smaller than that in the Se-rich and O-rich regions. The reason is that the middle composition region lies in the bandlike region while the Se-rich and the O-rich composition regions lie in the impurity-like region.
