The Experts below are selected from a list of 300 Experts worldwide ranked by ideXlab platform
Chen Fu - One of the best experts on this subject based on the ideXlab platform.
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study of Gate Width influence on extrinsic transconductance in algan gan heterostructure field effect transistors with polarization coulomb field scattering
IEEE Transactions on Electron Devices, 2016Co-Authors: Ming Yang, Yuanjie Lv, Zhihong Feng, Chen FuAbstract:AlGaN/GaN heterostructure FETs with the same Gate length and different Gate Widths were fabricated, and the extrinsic transconductance was measured. The device with a wider Gate Width shows a lower peak value, but a slower drop of extrinsic transconductance. This phenomenon is attributed to the influence of polarization Coulomb field (PCF) scattering, which originates from the irregular distribution of the polarization charges at the AlGaN/GaN interface. PCF scattering influences the extrinsic transconductance by scattering the electrons in the Gate–source channel, thus altering the source access resistance. Different Gate Widths are accompanied by different PCF scattering intensities, inducing different behaviors of extrinsic transconductance. It demonstrates the possibility to take advantage of PCF scattering to improve the characteristics of GaN devices.
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Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
IEEE Transactions on Electron Devices, 2016Co-Authors: Ming Yang, Yuanjie Lv, Zhihong Feng, Chen FuAbstract:AlGaN/GaN heterostructure FETs with the same Gate length and different Gate Widths were fabricated, and the extrinsic transconductance was measured. The device with a wider Gate Width shows a lower peak value, but a slower drop of extrinsic transconductance. This phenomenon is attributed to the influence of polarization Coulomb field (PCF) scattering, which originates from the irregular distribution of the polarization charges at the AlGaN/GaN interface. PCF scattering influences the extrinsic transconductance by scattering the electrons in the Gate-source channel, thus altering the source access resistance. Different Gate Widths are accompanied by different PCF scattering intensities, inducing different behaviors of extrinsic transconductance. It demonstrates the possibility to take advantage of PCF scattering to improve the characteristics of GaN devices.
Ming Yang - One of the best experts on this subject based on the ideXlab platform.
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Influence of Gate Width on Gate-channel carrier mobility in AlGaN/GaN heterostructure field-effect transistors
Superlattices and Microstructures, 2017Co-Authors: Ming Yang, Qizheng Ji, Shufeng Zhang, Yafei Yuan, Bo Song, Ziwei Lu, Jihao HeAbstract:Abstract For the fabricated AlGaN/GaN heterostructure field-effect transistors (HFETs) with different Gate Widths, the Gate-channel carrier mobility is experimentally obtained from the measured current-voltage and capacitance-voltage curves. Under each Gate voltage, the mobility gets lower with Gate Width increasing. Analysis shows that the phenomenon results from the polarization Coulomb field (PCF) scattering, which originates from the irregularly distributed polarization charges at the AlGaN/GaN interface. The device with a larger Gate Width is with a larger PCF scattering potential and a stronger PCF scattering intensity. As a function of Gate Width, PCF scattering potential shows a same trend with the mobility variation. And the theoretically calculated mobility values fits well with the experimentally obtained values. Varying Gate Widths will be a new perspective for the improvement of device characteristics by modulating the Gate-channel carrier mobility.
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study of Gate Width influence on extrinsic transconductance in algan gan heterostructure field effect transistors with polarization coulomb field scattering
IEEE Transactions on Electron Devices, 2016Co-Authors: Ming Yang, Yuanjie Lv, Zhihong Feng, Chen FuAbstract:AlGaN/GaN heterostructure FETs with the same Gate length and different Gate Widths were fabricated, and the extrinsic transconductance was measured. The device with a wider Gate Width shows a lower peak value, but a slower drop of extrinsic transconductance. This phenomenon is attributed to the influence of polarization Coulomb field (PCF) scattering, which originates from the irregular distribution of the polarization charges at the AlGaN/GaN interface. PCF scattering influences the extrinsic transconductance by scattering the electrons in the Gate–source channel, thus altering the source access resistance. Different Gate Widths are accompanied by different PCF scattering intensities, inducing different behaviors of extrinsic transconductance. It demonstrates the possibility to take advantage of PCF scattering to improve the characteristics of GaN devices.
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Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
IEEE Transactions on Electron Devices, 2016Co-Authors: Ming Yang, Yuanjie Lv, Zhihong Feng, Chen FuAbstract:AlGaN/GaN heterostructure FETs with the same Gate length and different Gate Widths were fabricated, and the extrinsic transconductance was measured. The device with a wider Gate Width shows a lower peak value, but a slower drop of extrinsic transconductance. This phenomenon is attributed to the influence of polarization Coulomb field (PCF) scattering, which originates from the irregular distribution of the polarization charges at the AlGaN/GaN interface. PCF scattering influences the extrinsic transconductance by scattering the electrons in the Gate-source channel, thus altering the source access resistance. Different Gate Widths are accompanied by different PCF scattering intensities, inducing different behaviors of extrinsic transconductance. It demonstrates the possibility to take advantage of PCF scattering to improve the characteristics of GaN devices.
Zhihong Feng - One of the best experts on this subject based on the ideXlab platform.
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Influence of mesa edge capacitance on frequency behavior of millimeter-wave AlGaN/GaN HEMTs
Solid-state Electronics, 2017Co-Authors: Jiangfeng Du, Zhihong Feng, Kang Wang, Qi YuAbstract:Abstract The influence of mesa edge capacitance on the frequency characteristics of AlGaN/GaN HEMTs with 90 nm Gate length was studied in this paper. To extract mesa edge capacitances, a small-signal equivalent circuit model considering mesa edge capacitances was provided. Based on the model, the intrinsic Gate capacitances of AlGaN/GaN HEMTs with 2 × 20 μm, 2 × 30 μm, 2 × 40 μm, and 2 × 50 μm Gate Widths were extracted, respectively. Through linear fitting along Gate Width for the extracted results and simulations, 8.06 fF/μm2 of mesa edge capacitances at Vgs = −4.5 V and Vds = 8 V in the devices with 2 × 20 μm Gate Width was obtained, which can be about 33.2% of the total Gate capacitance. Mesa edge capacitances results in a significant drop of current-gain cut-off frequency (fT), and the effect is more serious in the shorter Gate length devices.
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study of Gate Width influence on extrinsic transconductance in algan gan heterostructure field effect transistors with polarization coulomb field scattering
IEEE Transactions on Electron Devices, 2016Co-Authors: Ming Yang, Yuanjie Lv, Zhihong Feng, Chen FuAbstract:AlGaN/GaN heterostructure FETs with the same Gate length and different Gate Widths were fabricated, and the extrinsic transconductance was measured. The device with a wider Gate Width shows a lower peak value, but a slower drop of extrinsic transconductance. This phenomenon is attributed to the influence of polarization Coulomb field (PCF) scattering, which originates from the irregular distribution of the polarization charges at the AlGaN/GaN interface. PCF scattering influences the extrinsic transconductance by scattering the electrons in the Gate–source channel, thus altering the source access resistance. Different Gate Widths are accompanied by different PCF scattering intensities, inducing different behaviors of extrinsic transconductance. It demonstrates the possibility to take advantage of PCF scattering to improve the characteristics of GaN devices.
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Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
IEEE Transactions on Electron Devices, 2016Co-Authors: Ming Yang, Yuanjie Lv, Zhihong Feng, Chen FuAbstract:AlGaN/GaN heterostructure FETs with the same Gate length and different Gate Widths were fabricated, and the extrinsic transconductance was measured. The device with a wider Gate Width shows a lower peak value, but a slower drop of extrinsic transconductance. This phenomenon is attributed to the influence of polarization Coulomb field (PCF) scattering, which originates from the irregular distribution of the polarization charges at the AlGaN/GaN interface. PCF scattering influences the extrinsic transconductance by scattering the electrons in the Gate-source channel, thus altering the source access resistance. Different Gate Widths are accompanied by different PCF scattering intensities, inducing different behaviors of extrinsic transconductance. It demonstrates the possibility to take advantage of PCF scattering to improve the characteristics of GaN devices.
Yuanjie Lv - One of the best experts on this subject based on the ideXlab platform.
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study of Gate Width influence on extrinsic transconductance in algan gan heterostructure field effect transistors with polarization coulomb field scattering
IEEE Transactions on Electron Devices, 2016Co-Authors: Ming Yang, Yuanjie Lv, Zhihong Feng, Chen FuAbstract:AlGaN/GaN heterostructure FETs with the same Gate length and different Gate Widths were fabricated, and the extrinsic transconductance was measured. The device with a wider Gate Width shows a lower peak value, but a slower drop of extrinsic transconductance. This phenomenon is attributed to the influence of polarization Coulomb field (PCF) scattering, which originates from the irregular distribution of the polarization charges at the AlGaN/GaN interface. PCF scattering influences the extrinsic transconductance by scattering the electrons in the Gate–source channel, thus altering the source access resistance. Different Gate Widths are accompanied by different PCF scattering intensities, inducing different behaviors of extrinsic transconductance. It demonstrates the possibility to take advantage of PCF scattering to improve the characteristics of GaN devices.
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Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
IEEE Transactions on Electron Devices, 2016Co-Authors: Ming Yang, Yuanjie Lv, Zhihong Feng, Chen FuAbstract:AlGaN/GaN heterostructure FETs with the same Gate length and different Gate Widths were fabricated, and the extrinsic transconductance was measured. The device with a wider Gate Width shows a lower peak value, but a slower drop of extrinsic transconductance. This phenomenon is attributed to the influence of polarization Coulomb field (PCF) scattering, which originates from the irregular distribution of the polarization charges at the AlGaN/GaN interface. PCF scattering influences the extrinsic transconductance by scattering the electrons in the Gate-source channel, thus altering the source access resistance. Different Gate Widths are accompanied by different PCF scattering intensities, inducing different behaviors of extrinsic transconductance. It demonstrates the possibility to take advantage of PCF scattering to improve the characteristics of GaN devices.
Julius R Gersbach - One of the best experts on this subject based on the ideXlab platform.
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impact of Gate Width of corral traps in potential wild pig trapping success
Wildlife Society Bulletin, 2014Co-Authors: Eric M Metcalf, Israel D Parker, Roel R Lopez, Billy J Higginbotham, Donald S Davis, Julius R GersbachAbstract:Wild pig (Sus scrofa) populations do considerable environmental damage throughout much of the United States and have prompted varied capture and control efforts. Corral traps are a popular wild pig trapping tool. However, the impact of Gate Width on the effectiveness of corral traps has not been tested. This information could increase efficacy of capture and is important for future population-control efforts. We hypothesized that wild pigs would habituate better to corral traps with wider Gate openings. We used remote game cameras to monitor the willingness of wild pigs to enter baited corral traps through 4 common Gate Widths (0.9 m, 1.2 m, 1.5 m, 1.8 m; no doors on any Gates). We found no significant differences in Gate-Width selection for total wild pigs, sex-based selection, or number of piglets. Land managers should feel comfortable using Gate sizes as small as 0.9 m when constructing corral traps. © 2014 The Wildlife Society.