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Jene Andrew Golovchenko - One of the best experts on this subject based on the ideXlab platform.

  • Low-temperature Homoepitaxial Growth on Si(111) through a Pb monolayer
    Applied Physics Letters, 1998
    Co-Authors: Paul G. Evans, Oscar D. Dubon, John Chervinsky, Frans Spaepen, Jene Andrew Golovchenko
    Abstract:

    A monolayer of Pb mediates high-quality Homoepitaxial Growth on Si (111) surfaces at temperatures where Growth with other overlayer elements or on bare surfaces leads to amorphous or highly defective crystalline films. Nearly defect-free epitaxy proceeds for film thicknesses up to 1000 A with no sign that this is an upper limit. The minimum temperature for high-quality epitaxy depends on the substrate miscut. For a 0.2° miscut, the minimum temperature is 340 °C. Films grown on substrates miscut 2.3° towards [112] show good crystalline quality down to 310 °C.

  • Low‐temperature Homoepitaxial Growth on Si(111) mediated by thin overlayers of Au
    Applied Physics Letters, 1994
    Co-Authors: G. D. Wilk, John Chervinsky, Frans Spaepen, Robert E. Martinez, Jene Andrew Golovchenko
    Abstract:

    High quality Homoepitaxial Growth of Si on Si(111) through an overlayer of Au is shown to occur at 450–500 °C, far below the temperature required for Growth of Si of similar quality on bare Si(111). Films of unlimited thickness can be obtained with excellent crystalline quality, as revealed by Rutherford backscattering spectrometry ion channeling measurements (χmin=2.2%). A distinct range of Au coverage (0.4–1.0 monolayer) results in the best quality epitaxy, with no measurable amount of Au trapped at either the interface or within the grown films. Cross‐sectional transmission electron microscopy reveals that in films grown with Au coverages below and above the optimum range, the predominant defects are twins on (111) planes and Au inclusions, respectively.

Gabriel Ferro - One of the best experts on this subject based on the ideXlab platform.

  • ge incorporation inside 4h sic during Homoepitaxial Growth by chemical vapor deposition
    Acta Materialia, 2014
    Co-Authors: Kassem Alassaad, Véronique Soulière, François Cauwet, Hervé Peyre, Davy Carole, Pawel Kwasnicki, Sandrine Juillaguet, Thomas Kups, Jörg Pezoldt, Gabriel Ferro
    Abstract:

    Abstract In this work, we report on the addition of GeH 4 gas during Homoepitaxial Growth of 4H-SiC by chemical vapor deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied by Ge droplet accumulation at the surface. The Ge incorporation level inside the 4H-SiC matrix, ranging from a few 10 17 to a few 10 18  at. cm −3 , was found to be mainly affected by the Growth temperature and GeH 4 flux. Other Growth parameters, such as C/Si ratio, polarity or off-orientation, did not show any significant influence. The Ge incorporation inside SiC was determined to occur at Si sites. On the other hand, adding GeH 4 led to an increase in the intentional n-type doping level by a factor of 2–5 depending on the C/Si ratio in the gas phase.

  • Ge incorporation inside 4H-SiC during Homoepitaxial Growth by chemical vapor deposition.
    Acta Materialia, 2014
    Co-Authors: Kassem Alassaad, Véronique Soulière, François Cauwet, Hervé Peyre, Davy Carole, Pawel Kwasnicki, Sandrine Juillaguet, Thomas Kups, Jörg Pezoldt, Gabriel Ferro
    Abstract:

    In this work, we report on the addition of GeH4 gas during Homoepitaxial Growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets accumulation at the surface. The Ge incorporation level inside the 4H-SiC matrix, ranging from few 1017 to few 1018 at.cm-3, was found to be mainly affected by the Growth temperature and GeH4 flux. Other Growth parameters like C/Si ratio, polarity, or off-orientation did not show any significant influence. On the other hand, adding GeH4 led to the increase of the intentional n type doping level by a factor of 2 to 5 depending on the C/Si ratio in the gas phase.

  • Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature
    2009
    Co-Authors: Nikoletta Jegenyes, Jean Lorenzzi, Véronique Soulière, Jacques Dazord, François Cauwet, Gabriel Ferro
    Abstract:

    Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, Homoepitaxial Growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the Growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.

  • SiC Homoepitaxial Growth at Low Temperature by Vapor-Liquid-Solid Mechanism in Al-Si Melt
    Crystal Growth and Design, 2003
    Co-Authors: Christophe Jacquier, Didier Chaussende, François Cauwet, Gabriel Ferro, Yves Monteil
    Abstract:

    Homoepitaxial Growth of SiC was successfully performed at a temperature as low as 1100 °C via a vapor-liquid-solid (VLS) mechanism where propane feeds an Al-Si droplet. This approach has several advantages compared to the conventional liquid-phase epitaxy (LPE) such as an easier mastering of the Growth as no thermal gradient (vertical or radial) needs to be controlled. We observed however the formation at the surface of small crystals during the cooling. Some small nonwetted zones are also seen, but they occupy less than 1% of the sample area. Both defects were also present in LPE configuration.

E. Vlieg - One of the best experts on this subject based on the ideXlab platform.

  • Sb-enhanced nucleation in the Homoepitaxial Growth of Ag(111)
    Physical Review B, 1998
    Co-Authors: H. A. Van Der Vegt, J. Vrijmoeth, R. J. Behm, E. Vlieg
    Abstract:

    The effect of Sb on the Homoepitaxial Growth mode of a Ag(111) surface has been studied by scanning tunneling microscopy. In a previous paper we reported on the effect of Sb on the interlayer diffusion barrier of Ag(111). Here we describe in more detail the effect of Sb on the island nucleation and surface diffusion. We find a homogeneous effect of the Sb on the Ag(111) surface, while heterogeneous nucleation and sticking can be excluded. The surface diffusion barrier appears to be linearly dependent on the Sb concentration. This shows that Sb has an effect not only locally at the step edges, but also on the terraces where it decreases the mobility of the Ag atoms. Further, we show that the Sb segregates efficiently during Growth. [S0163-1829(98)02807-0].

  • Indium-induced layer-by-layer Growth and suppression of twin formation in the Homoepitaxial Growth of Cu(111).
    Physical review. B Condensed matter, 1995
    Co-Authors: H. A. Van Der Vegt, Jesús Álvarez, Xavier Torrelles, S. Ferrer, E. Vlieg
    Abstract:

    We have investigated the effect of In on the Homoepitaxial Growth of Cu(111) by means of surface x-ray diffraction. At the temperature range investigated (125--300 K), the Growth on clean Cu occurs in a three-dimensional mode with the creation of twin crystallites over a small fraction of the total surface area. When the surface is precovered with a submonolayer amount of In, layer-by-layer Growth is induced and the formation of twin crystallites is suppressed.

Lide Zhang - One of the best experts on this subject based on the ideXlab platform.

  • Density-Controlled Homoepitaxial Growth of ZnS Nanowire Arrays
    The Journal of Physical Chemistry C, 2009
    Co-Authors: Min Wang, Guang Tao Fei, Xiao Guang Zhu, Ming Guang Kong, Lide Zhang
    Abstract:

    In this paper, single-crystal ZnS column arrays are prepared on the ZnS wafer. The ZnS column arrays are then utilized as a transition layer to achieve large-scale Homoepitaxial Growth of ZnS nanowire arrays. Through annealing ZnS columns coated with Au films at different temperatures, the Au particle density is controlled, and the ZnS nanowire density is controlled via a vapor−liquid−solid process ranging from 0.33 to 3.04 wires/μm2. This universal method can be easily applied to Homoepitaxially grow nanowire arrays of other materials and tune the nanowire density.

Rositsa Yakimova - One of the best experts on this subject based on the ideXlab platform.

  • Selective Homoepitaxial Growth and luminescent properties of ZnO nanopillars.
    Nanotechnology, 2011
    Co-Authors: Volodymyr Khranovskyy, Ioannis Tsiaoussis, Lars Hultman, Rositsa Yakimova
    Abstract:

    High spatial density ZnO nanopillars (NPs) have been fabricated on catalyst-and pattern-free Si wafers using atmospheric pressure metal organic chemical vapor deposition (APMOCVD) at a moderate temperature (500 degrees C). The nanopillar diameter is similar to 35 nm and the length is similar to 150 nm, with a density of similar to 2 x 10(9) cm(-2). The Growth evolution of the nanopillars, providing the (0001)(NP) parallel to (0001)(ZnO) (grain) parallel to (100)(Si) (surface) epitaxial relationship, is extensively studied by scanning and high resolution transmission microscopy. The approach to obtaining the ZnO 1D structures is explained in terms of selective Homoepitaxial Growth via the crystallographic anisotropy of the seeding layer. The advanced PL properties of ZnO NPs, e. g. indications of free excitonic and absence of defect emission, are related to their single crystalline nature within one pillar and most probably better stoichiometry and less contamination. The observed efficient monochromatic UV emission from the ZnO NPs at room temperature points toward their potential application as building blocks for nanoscale optoelectronic devices.