The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform

Longfei Song - One of the best experts on this subject based on the ideXlab platform.

Yunfa Chen - One of the best experts on this subject based on the ideXlab platform.

Dezhen Shen - One of the best experts on this subject based on the ideXlab platform.

  • sb doped zno microwires emitting filament and Homojunction light emitting diodes
    Journal of Materials Chemistry C, 2017
    Co-Authors: Mingming Jiang, Zhenzhong Zhang, Haifeng Zhao, Chongxin Shan, Dezhen Shen
    Abstract:

    Individual Sb-doped ZnO (ZnO:Sb) microwires with durable and reproducible p-type conduction have been synthesized, and by increasing the Sb2O3 weight ratios in the precursor mixtures, tunable p-type conduction characteristics can be obtained. Meanwhile, wavelength-tuning electroluminescence (EL) has been observed by applying bias onto individual ZnO:Sb microwires, in which the ZnO:Sb microwires act as emitting filaments. The as-synthesized p-type ZnO:Sb microwires are applied to fabricate Homojunction light-emitting devices. The corresponding p–n junction demonstrates excellent diode characteristics, and strong near band edge emissions can be observed with the dominant EL emission wavelengths centered at 400 nm. The results demonstrated the emitting filament characteristics of ZnO:Sb microwires for the first time, and also demonstrated their applicability in Homojunction light-emitting diodes, and thus may offer alluring prospects as compact, efficient, reliable building blocks for microscale light sources.

  • a highly efficient uv photodetector based on a zno microwire p n Homojunction
    Journal of Materials Chemistry C, 2014
    Co-Authors: Linlin Shi, Dongxu Zhao, Fei Wang, Xing Chen, Bin Yao, Dezhen Shen
    Abstract:

    A highly efficient ultraviolet photodetector was successfully obtained based on a Sb-doped p-type ZnO microwire p–n Homojunction which consisted of a single Sb-doped p-type ZnO microwire and a single undoped ZnO microwire. The ultralong Sb-doped ZnO single crystalline microwires were synthesized via a chemical vapor deposition method. The ZnO microwire Homojunction showed well-defined rectification characteristics, which indicated the p-type conductivity of the Sb-doped ZnO microwire. An ultraviolet photodetector with an external quantum efficiency of 64.5% was obtained based on the ZnO microwire p–n Homojunction. The photodetector showed high wavelength selectivity with a full width at half maximum of 6 nm for the photoresponse peak located at 386 nm.

  • stable surface plasmon enhanced zno Homojunction light emitting devices
    Journal of Materials Chemistry C, 2013
    Co-Authors: He Shen, Chongxin Shan, Qian Qiao, Jishan Liu, Dezhen Shen
    Abstract:

    Ag nanoparticle surface plasmon enhanced ZnO Homojunction light-emitting devices (LEDs) have been constructed. It is found that the Ag nanoparticles can increase the emission of the devices greatly, and the Ag nanoparticle decorated LEDs degrade little after placing in ambient air for three months, revealing their good stability.

  • phosphorus doped p type zno nanorods and zno nanorod p n Homojunction led fabricated by hydrothermal method
    Journal of Physical Chemistry C, 2009
    Co-Authors: Xuan Fang, Dongxu Zhao, Dezhen Shen, Xiaohua Wang
    Abstract:

    Phosphorus-doped ZnO nanorods and ZnO nanorod Homojunctions were prepared by a hydrothermal method. The structural and photoluminescent (PL) characterizations showed the P atoms doped into the ZnO crystal lattice. In low-temperature PL spectra the emission peaks located at 3.310 and 3.241 eV were observed, which could be attributed to a conduction band to the phosphorus-related acceptor transition and a donor−acceptor pair transition, respectively. ZnO Homojunctions were synthesized by P-doped ZnO nanorods grown on undoped ZnO nanorods. The current−voltage (I−V) measurement based on the ZnO nanorod p−n Homojunctions showed a typical semiconductor rectification characteristic with a turn-on voltage of about 3.14 V, which meant the conductivity of the P-doped ZnO nanorod might be a p-type conductivity. The electroluminescence was observed at room temperature for this Homojunction, which contained a violet-blue emission and a broad visible band emission.

Wenching Sun - One of the best experts on this subject based on the ideXlab platform.

  • theoretical simulations of the effects of the indium content thickness and defect density of the i layer on the performance of p i n ingan single Homojunction solar cells
    Journal of Applied Physics, 2010
    Co-Authors: Shihwei Feng, Chihming Lai, Chienhsun Chen, Wenching Sun
    Abstract:

    In this study, we conducted numerical simulations with the consideration of microelectronic and photonic structures to determine the feasibility of and to design the device structure for the optimized performance of InGaN p-i-n single Homojunction solar cells. Operation mechanisms of InGaN p-i-n single Homojunction solar cells were explored through the calculation of the characteristic parameters such as the absorption, collection efficiency (χ), open circuit voltage (Voc), short circuit current density (Jsc), and fill factor (FF). Simulation results show that the characteristic parameters of InGaN solar cells strongly depend on the indium content, thickness, and defect density of the i-layer. As the indium content in the cell increases, Jsc and absorption increase while χ, Voc, and FF decrease. The combined effects of the absorption, χ, Voc, Jsc, and FF lead to a higher conversion efficiency in the high-indium-content solar cell. A high-quality In0.75Ga0.25N solar cell with a 4 μm i-layer thickness can exhibit as high a conversion efficiency as ∼23%. In addition, the similar trend of conversion efficiency to that of Jsc shows that Jsc is a dominant factor to determine the performance of p-i-n InGaN solar cells. Furthermore, compared with the previous simulation results without the consideration of defect density, the lower calculated conversion efficiency verifies that the sample quality has a great effect on the performance of a solar cell and a high-quality InGaN alloy is necessary for the device fabrication. Simulation results help us to better understand the electro-optical characteristics of InGaN solar cells and can be utilized for efficiency enhancement through optimization of the device structure.In this study, we conducted numerical simulations with the consideration of microelectronic and photonic structures to determine the feasibility of and to design the device structure for the optimized performance of InGaN p-i-n single Homojunction solar cells. Operation mechanisms of InGaN p-i-n single Homojunction solar cells were explored through the calculation of the characteristic parameters such as the absorption, collection efficiency (χ), open circuit voltage (Voc), short circuit current density (Jsc), and fill factor (FF). Simulation results show that the characteristic parameters of InGaN solar cells strongly depend on the indium content, thickness, and defect density of the i-layer. As the indium content in the cell increases, Jsc and absorption increase while χ, Voc, and FF decrease. The combined effects of the absorption, χ, Voc, Jsc, and FF lead to a higher conversion efficiency in the high-indium-content solar cell. A high-quality In0.75Ga0.25N solar cell with a 4 μm i-layer thickness can e...

  • theoretical simulations of the effects of the indium content thickness and defect density of the i layer on the performance of p i n ingan single Homojunction solar cells
    Journal of Applied Physics, 2010
    Co-Authors: Shihwei Feng, Chihming Lai, Chienhsun Chen, Wenching Sun
    Abstract:

    In this study, we conducted numerical simulations with the consideration of microelectronic and photonic structures to determine the feasibility of and to design the device structure for the optimized performance of InGaN p-i-n single Homojunction solar cells. Operation mechanisms of InGaN p-i-n single Homojunction solar cells were explored through the calculation of the characteristic parameters such as the absorption, collection efficiency (χ), open circuit voltage (Voc), short circuit current density (Jsc), and fill factor (FF). Simulation results show that the characteristic parameters of InGaN solar cells strongly depend on the indium content, thickness, and defect density of the i-layer. As the indium content in the cell increases, Jsc and absorption increase while χ, Voc, and FF decrease. The combined effects of the absorption, χ, Voc, Jsc, and FF lead to a higher conversion efficiency in the high-indium-content solar cell. A high-quality In0.75Ga0.25N solar cell with a 4 μm i-layer thickness can e...

Kyoungshin Choi - One of the best experts on this subject based on the ideXlab platform.

  • junction studies on electrochemically fabricated p n cu2o Homojunction solar cells for efficiency enhancement
    Physical Chemistry Chemical Physics, 2012
    Co-Authors: Colleen M Mcshane, Kyoungshin Choi
    Abstract:

    p–n Cu2O Homojunction solar cells were electrochemically fabricated by consecutively depositing an n-Cu2O layer on a p-Cu2O layer. In order to better understand the Fermi levels of the electrochemically grown polycrystalline p- and n-Cu2O layers and maximize the overall cell performance, the back and front contacts of the Cu2O Homojunction cells were systematically changed and the I–V characteristics of the resulting cells were examined. The result shows that the intrinsic doping levels of the electrochemically prepared p-Cu2O and n-Cu2O layers are very low and they made almost Ohmic junctions with Cu metal with which previously studied p-Cu2O layers prepared by thermal oxidation of Cu foils are known to form Schottky junctions. The best cell performance (an η of 1.06%, a VOC of 0.621 V, an ISC of 4.07 mA cm–2, and a fill factor (ff) of 42%) was obtained when the p-Cu2O layer was deposited on a commercially available ITO substrate as the back contact and a sputter deposited ITO layer was used as the front contact on the n-Cu2O layer. The unique features of the p–n Cu2O Homojunction solar cell are discussed in comparison with other Cu2O-based heterojunction solar cells.

  • effect of junction morphology on the performance of polycrystalline cu2o Homojunction solar cells
    Journal of Physical Chemistry Letters, 2010
    Co-Authors: Colleen M Mcshane, W Siripala, Kyoungshin Choi
    Abstract:

    Cu2O p−n Homojunction solar cells were fabricated by the consecutive electrochemical deposition of p-Cu2O layer, followed by n-Cu2O layer. The surface morphology of p-type Cu2O, which determines th...