The Experts below are selected from a list of 696 Experts worldwide ranked by ideXlab platform

Shuittong Lee - One of the best experts on this subject based on the ideXlab platform.

  • moo3 nanodots decorated cds nanoribbons for high performance homojunction photovoltaic devices on flexible substrates
    Nano Letters, 2015
    Co-Authors: Zhibin Shao, Jiansheng Jie, Zheng Sun, Feifei Xia, Yuming Wang, Xiaohong Zhang, Ke Ding, Shuittong Lee
    Abstract:

    The p–n Homojunctions are essential components for high-efficiency optoelectronic devices. However, the lack of p-type doping in CdS nanostructures hampers the fabrication of efficient photovoltaic (PV) devices from Homojunctions. Here we report a facile solution-processed method to achieve efficient p-type doping in CdS nanoribbons (NRs) via a surface charge transfer mechanism by using spin-coated MoO3 nanodots (NDs). The NDs-decorated CdS NRs exhibited a hole concentration as high as 8.5 × 1019 cm–3, with the p-type conductivity tunable in a wide range of 7 orders of magnitude. The surface charge transfer mechanism was characterized in detail by X-ray photoelectron spectroscopy, Kelvin probe force microscopy, and first-principle calculations. CdS NR-homojunction PV devices fabricated on a flexible substrate exhibited a power conversion efficiency of 5.48%, which was significantly better than most of the CdS nanostructure-based heterojunction devices, presumably due to minimal junction defects. Devices m...

  • MoO3 Nanodots Decorated CdS Nanoribbons for High-Performance, Homojunction Photovoltaic Devices on Flexible Substrates
    2015
    Co-Authors: Zhibin Shao, Jiansheng Jie, Zheng Sun, Feifei Xia, Yuming Wang, Xiaohong Zhang, Ke Ding, Shuittong Lee
    Abstract:

    The p–n Homojunctions are essential components for high-efficiency optoelectronic devices. However, the lack of p-type doping in CdS nanostructures hampers the fabrication of efficient photovoltaic (PV) devices from Homojunctions. Here we report a facile solution-processed method to achieve efficient p-type doping in CdS nanoribbons (NRs) via a surface charge transfer mechanism by using spin-coated MoO3 nanodots (NDs). The NDs-decorated CdS NRs exhibited a hole concentration as high as 8.5 × 1019 cm–3, with the p-type conductivity tunable in a wide range of 7 orders of magnitude. The surface charge transfer mechanism was characterized in detail by X-ray photoelectron spectroscopy, Kelvin probe force microscopy, and first-principle calculations. CdS NR-homojunction PV devices fabricated on a flexible substrate exhibited a power conversion efficiency of 5.48%, which was significantly better than most of the CdS nanostructure-based heterojunction devices, presumably due to minimal junction defects. Devices made by connecting cells in series or in parallel exhibited enhanced power output, demonstrating the promising potential of the homojunction PV devices for device integration. Given the high efficiency of the surface charge transfer doping and the solution-processing capability of the method, our work opens up unique opportunities for high-performance, low-cost optoelectronic devices based on CdS Homojunctions

Jean-paul Kleider - One of the best experts on this subject based on the ideXlab platform.

  • Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells
    Energy Procedia, 2016
    Co-Authors: Alexander Korovin, J Alvarez, Jean-paul Kleider
    Abstract:

    In this report a 2D modeling of n-type interdigitated back contact (IBC) crystalline silicon (c-Si) solar cell structures is presented for two different types of the BSF and emitter junctions: homojunction cells (referred as IBC-HOMO) and cells combining a homojunction and a heterojunction with hydrogenated amorphous silicon (a-Si:H), also called "hybrid" cells (referred as hybrid IBC). Both structures were analyzed and in particular we studied the effect of doping (peak concentration and penetration depth of the dopants) on the solar cell performances. For doping levels in the range 10 18-10 20 cm-3 relatively large dopant penetration depth (>100 nm) demonstrates better solar cell performance in contrary to very shallow penetration depths (10 nm). The best solar cell performance (25.6% conversion efficiency, 740 mV open circuit voltage, 41 mA/cm 2 short circuit current and 84.2% fill factor) were found for hybrid IBC structures involving a BSF heterojunction and a highly doped emitter homojunction (N E = 10 21 cm-3) with a dopant penetration depth of 10 nm in the case of n-type silicon wafer with a thickness of 100 m. The implementation of defects at the c-Si/a-Si:H interface in the range (1-5)×10 11 cm-2 shows that hybrid cells with BSF heterojunctions are more affected than the structures with emitter heterojunctions. However, solar cell efficiencies of 25% can be simulated for hybrid cells if the width of the BSF is reduced with respect to the emitter and combined with highly doped Homojunctions and shallow dopant penetration depths.

Zhibin Shao - One of the best experts on this subject based on the ideXlab platform.

  • moo3 nanodots decorated cds nanoribbons for high performance homojunction photovoltaic devices on flexible substrates
    Nano Letters, 2015
    Co-Authors: Zhibin Shao, Jiansheng Jie, Zheng Sun, Feifei Xia, Yuming Wang, Xiaohong Zhang, Ke Ding, Shuittong Lee
    Abstract:

    The p–n Homojunctions are essential components for high-efficiency optoelectronic devices. However, the lack of p-type doping in CdS nanostructures hampers the fabrication of efficient photovoltaic (PV) devices from Homojunctions. Here we report a facile solution-processed method to achieve efficient p-type doping in CdS nanoribbons (NRs) via a surface charge transfer mechanism by using spin-coated MoO3 nanodots (NDs). The NDs-decorated CdS NRs exhibited a hole concentration as high as 8.5 × 1019 cm–3, with the p-type conductivity tunable in a wide range of 7 orders of magnitude. The surface charge transfer mechanism was characterized in detail by X-ray photoelectron spectroscopy, Kelvin probe force microscopy, and first-principle calculations. CdS NR-homojunction PV devices fabricated on a flexible substrate exhibited a power conversion efficiency of 5.48%, which was significantly better than most of the CdS nanostructure-based heterojunction devices, presumably due to minimal junction defects. Devices m...

  • MoO3 Nanodots Decorated CdS Nanoribbons for High-Performance, Homojunction Photovoltaic Devices on Flexible Substrates
    2015
    Co-Authors: Zhibin Shao, Jiansheng Jie, Zheng Sun, Feifei Xia, Yuming Wang, Xiaohong Zhang, Ke Ding, Shuittong Lee
    Abstract:

    The p–n Homojunctions are essential components for high-efficiency optoelectronic devices. However, the lack of p-type doping in CdS nanostructures hampers the fabrication of efficient photovoltaic (PV) devices from Homojunctions. Here we report a facile solution-processed method to achieve efficient p-type doping in CdS nanoribbons (NRs) via a surface charge transfer mechanism by using spin-coated MoO3 nanodots (NDs). The NDs-decorated CdS NRs exhibited a hole concentration as high as 8.5 × 1019 cm–3, with the p-type conductivity tunable in a wide range of 7 orders of magnitude. The surface charge transfer mechanism was characterized in detail by X-ray photoelectron spectroscopy, Kelvin probe force microscopy, and first-principle calculations. CdS NR-homojunction PV devices fabricated on a flexible substrate exhibited a power conversion efficiency of 5.48%, which was significantly better than most of the CdS nanostructure-based heterojunction devices, presumably due to minimal junction defects. Devices made by connecting cells in series or in parallel exhibited enhanced power output, demonstrating the promising potential of the homojunction PV devices for device integration. Given the high efficiency of the surface charge transfer doping and the solution-processing capability of the method, our work opens up unique opportunities for high-performance, low-cost optoelectronic devices based on CdS Homojunctions

Young Hee Lee - One of the best experts on this subject based on the ideXlab platform.

  • a van der waals homojunction ideal p n diode behavior in mose2
    Advanced Materials, 2015
    Co-Authors: Youngjo Jin, Dong Hoon Keum, Joonggyu Kim, Hyun Seok Lee, Young Hee Lee
    Abstract:

    A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of ≈1.0 and a high external quantum efficiency (≈52%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.

Dezhen Shen - One of the best experts on this subject based on the ideXlab platform.

  • a highly efficient uv photodetector based on a zno microwire p n homojunction
    Journal of Materials Chemistry C, 2014
    Co-Authors: Linlin Shi, Dongxu Zhao, Fei Wang, Xing Chen, Bin Yao, Dezhen Shen
    Abstract:

    A highly efficient ultraviolet photodetector was successfully obtained based on a Sb-doped p-type ZnO microwire p–n homojunction which consisted of a single Sb-doped p-type ZnO microwire and a single undoped ZnO microwire. The ultralong Sb-doped ZnO single crystalline microwires were synthesized via a chemical vapor deposition method. The ZnO microwire homojunction showed well-defined rectification characteristics, which indicated the p-type conductivity of the Sb-doped ZnO microwire. An ultraviolet photodetector with an external quantum efficiency of 64.5% was obtained based on the ZnO microwire p–n homojunction. The photodetector showed high wavelength selectivity with a full width at half maximum of 6 nm for the photoresponse peak located at 386 nm.

  • phosphorus doped p type zno nanorods and zno nanorod p n homojunction led fabricated by hydrothermal method
    Journal of Physical Chemistry C, 2009
    Co-Authors: Xuan Fang, Dongxu Zhao, Dezhen Shen, Xiaohua Wang
    Abstract:

    Phosphorus-doped ZnO nanorods and ZnO nanorod Homojunctions were prepared by a hydrothermal method. The structural and photoluminescent (PL) characterizations showed the P atoms doped into the ZnO crystal lattice. In low-temperature PL spectra the emission peaks located at 3.310 and 3.241 eV were observed, which could be attributed to a conduction band to the phosphorus-related acceptor transition and a donor−acceptor pair transition, respectively. ZnO Homojunctions were synthesized by P-doped ZnO nanorods grown on undoped ZnO nanorods. The current−voltage (I−V) measurement based on the ZnO nanorod p−n Homojunctions showed a typical semiconductor rectification characteristic with a turn-on voltage of about 3.14 V, which meant the conductivity of the P-doped ZnO nanorod might be a p-type conductivity. The electroluminescence was observed at room temperature for this homojunction, which contained a violet-blue emission and a broad visible band emission.