The Experts below are selected from a list of 210 Experts worldwide ranked by ideXlab platform
Kurt E. Sickafus - One of the best experts on this subject based on the ideXlab platform.
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Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence
Journal of Applied Physics, 2004Co-Authors: In-tae Bae, Manabu Ishimaru, Yoshihiko Hirotsu, Kurt E. SickafusAbstract:We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150keV Xe ions to fluences of 1015 and 1016∕cm2, followed by annealing at 890°C. Full epitaxial recrystallization took place in a specimen Implanted with 1015 Xe ions, while retardation of recrystallization was observed in a specimen Implanted with 1016∕cm2 Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 1016Xe∕cm2 Implanted Sample is attributed to the difference in amorphous structures between the 1015 and 1016Xe∕cm2 Implanted Samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 1016Xe∕cm2 Implanted Sample.
D. Kanjilal - One of the best experts on this subject based on the ideXlab platform.
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Studies of SiO2 thin films Implanted with 100keV silicon ions
Materials Today: Proceedings, 2020Co-Authors: Suraj B. Vishwakarma, R.l. Dubey, Sheshmani K. Dubey, V. Bambole, I. Sulania, D. KanjilalAbstract:Abstract 100 keV energetic siliconnegative ions with fluences varying from 1 x 10 15 to 2 x 10 17 ions-cm-2 are Implanted in SiO2 thin film of thickness 300 nm grown on silicon substrate. Structural properties of as-Implanted Samples have been investigated using glancing angle X-ray diffraction (GAXRD) and Raman Scattering. The topographical studies have been done by Atomic Force Microscopy (AFM) measurements. X-ray diffraction spectra of non-Implanted Sample showed the presence of broad XRD peak of SiO2 at 22° and silicon peak at 54°with d∼0.177 nm corresponding to (311) reflection. The GAXRD investigation of Implanted Samples showed increase in the X-ray peak intensity for glancing angle 2° as compared to 1.5°. Particle size decreases and found to vary with ion fluences at the angle of 2°as compared with 1.5°, this may be due to cluster formation varies within SiO2 matrix with depth. Raman scattering measurements reveals that theband spectra about 1100-1200 cm-1 appears due to oxide layer covering the silicon nanoclusters formed as well as the Si-O-Si stretching vibrations within SiO2 matrix. AFM studies reveal that as compared to non-Implanted Samples the roughness of Implanted Samples decreased after implantation.
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Structural and optical studies of GaSb Implanted with iron ions
Surface & Coatings Technology, 2009Co-Authors: Vidya Jadhav, S. K. Dubey, R.l. Dubey, A.d. Yadav, D. KanjilalAbstract:Abstract Single crystal gallium antimonide substrate was Implanted with 200 keV iron ions with different ion fluences varying from 1 × 10 14 to 1 × 10 16 cm − 2 . Optical and structural properties have been investigated using the micro-Raman, Fourier transform infrared and grazing-angle X-ray diffraction measurements. Raman studies have shown the amorphization of gallium antimonide at higher fluences. Fourier transform infrared transmission studies over photon energy range 0.3 to 0.7 eV showed the change in the value of optical density over the entire photon energy range for the Implanted Samples as compared with the non-Implanted Sample. Damage profile probed by etching the Sample was found to be non-uniformly distributed in the Implanted Sample. Grazing-angle X-ray diffraction spectra recorded at 1, 5 and 10° suggests the presence of defects and disorder in gallium antimonide after implantation.
Z. P. Wang - One of the best experts on this subject based on the ideXlab platform.
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Photoluminescence and Raman scattering of silicon nanocrystals prepared by silicon ion implantion into SiO2 films
Journal of Applied Physics, 2000Co-Authors: K. Ding, Ye Chen, H. X. Han, Z. P. WangAbstract:Photoluminescence (PL) and Raman spectra of silicon nanocrystals prepared by Si ion implantion into SiO2 layers on Si substrate have been measured at room temperature. Their dependence on annealing temperature was investigated in detail. The PL peaks observed in the as-Implanted Sample originate from the defects in SiO2 layers caused by ion implantation. They actually disappear after thermal annealing at 800 degrees C. The PL peak from silicon nanocrystals was observed when thermal annealing temperatures are higher than 900 degrees C. The PL peak is redshifted to 1.7 eV and the intensity reaches maximum at the thermal annealing temperature of 1100 degrees C. The characterized Raman scattering peak of silicon nanocrystals was observed by using a right angle scattering configuration. The Raman signal related to the silicon nanocrystals appears only in the Samples annealed at temperature above 900 degrees C. It further proves the formation of silicon nanocrystals in these Samples. (C) 2000 American Institute of Physics. [S0021-8979(00)00215-2].
Kazuo Saitoh - One of the best experts on this subject based on the ideXlab platform.
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High-energy co-implantation of Ti and O ions into sapphire
Materials Chemistry and Physics, 1998Co-Authors: Setsuo Nakao, Masami Ikeyama, Masato Tazawa, Ping Jin, Hiroaki Niwa, Seita Tanemura, Yoshiko Miyagawa, Soji Miyagawa, Kazuo SaitohAbstract:Abstract Optical and structural changes of sapphire(0001) substrates Implanted with Ti ions or with Ti and 0 ions and subjected to thermal annealing, are examined by optical absorption, RBS-channeling and XRD measurements. The transmittance of the co-Implanted Sample was larger than that of the Ti-Implanted Sample. After annealing at 1000 °C, rutile-type TiO 2 microcrystals with (200) orientation were formed in the co-Implanted Sample of Ti and O ions. Furthermore, a broad optical absorption at 220–340 nm in the co-Implanted Sample was increased after the annealing. This was possibly due to the formation of TiO2 microcrystals in the sapphire substrate. In contrast to this result, no evidence of the formation of titanium oxide in a crystal structure was obtained for the Ti-Implanted Sample after the annealing.
In-tae Bae - One of the best experts on this subject based on the ideXlab platform.
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Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence
Journal of Applied Physics, 2004Co-Authors: In-tae Bae, Manabu Ishimaru, Yoshihiko Hirotsu, Kurt E. SickafusAbstract:We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150keV Xe ions to fluences of 1015 and 1016∕cm2, followed by annealing at 890°C. Full epitaxial recrystallization took place in a specimen Implanted with 1015 Xe ions, while retardation of recrystallization was observed in a specimen Implanted with 1016∕cm2 Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 1016Xe∕cm2 Implanted Sample is attributed to the difference in amorphous structures between the 1015 and 1016Xe∕cm2 Implanted Samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 1016Xe∕cm2 Implanted Sample.
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Ion dose dependence on solid phase epitaxy of amorphous silicon carbide induced by ion implantation
MRS Proceedings, 2002Co-Authors: In-tae Bae, Manabu Ishimaru, Yoshihiko HirotsuAbstract:ABSTRACTAmorphous silicon carbides (a-SiC) fabricated by Xe+ ion implantation into 6H-SiC (0001) to fluences of 1015 and 1016/cm2 have been annealed at 850 °C for 1 hour. Transmission electron microscopy (TEM) observations revealed that the 1015 Xe+/cm2 Implanted Sample was completely recrystallized, while most of the a-SiC remains in the 1016 Xe+/cm2 Implanted Sample. Pair-distribution function analyses of both of the as-Implanted Samples show that the peak intensity of Si-C heteronuclear bonds is higher and the peak intensities of Si-Si and C-C homonuclear bonds are lower in the 1015 Xe+/cm2 Implanted Sample, indicating that the atomistic structure of the 1015 Xe+/cm2 Implanted Sample is more chemically ordered than that of the 1016 Xe+/cm2 Implanted Sample. This result suggests that more chemically ordered atomistic structure of 1015 Xe+/cm2 Implanted a-SiC leads to complete recrystallization during thermal annealing.
