The Experts below are selected from a list of 206976 Experts worldwide ranked by ideXlab platform
Wayne Greene - One of the best experts on this subject based on the ideXlab platform.
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Indium transient enhanced diffusion
Applied Physics Letters, 1998Co-Authors: Peter B. Griffin, Min Cao, P. Vande Voorde, Y.-l. Chang, Wayne GreeneAbstract:Indium, an acceptor dopant in silicon, is a large atom with a low diffusion coefficient potentially suitable for doping the channel of transistors. Systematic experiments are described which measure the susceptibility of Indium to transient enhanced diffusion caused by ion implant damage introduced during the transistor fabrication process. We find that Indium diffusion is dramatically enhanced by a source of interstitials and that the amount of enhancement is comparable to that seen for boron. Indium is preferable as a channel dopant not because of its diffusion behavior, but rather because a narrow ion implanted distribution can be obtained using the heavy Indium ion, giving a more steeply retrograde profile than can be achieved by boron doping. These results help clarify the physics of Indium and boron doping in small devices.
Erkki Paatero - One of the best experts on this subject based on the ideXlab platform.
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recovery of Indium from Indium tin oxide by solvent extraction
Hydrometallurgy, 2011Co-Authors: Sami Virolainen, Don Ibana, Erkki PaateroAbstract:Abstract Recovery of Indium from LCD screen wastes, which contain Indium in the form of Indium tin oxide (ITO) as the electrode material, is becoming economically and environmentally justified. Indium is a valuable metal and the present work was aimed to recover Indium from ITO as the starting material to study the recovery of Indium from waste LCD screens by solvent extraction. The apparent rate of dissolution in acidic media is slow requiring six hours for complete dissolution of the ITO sample in 1 M of either H2SO4 or HCl. Complete dissolution in HNO3 took significantly longer. The acid concentration was found to have a major effect on both the amount and rate of leaching allowing some leaching selectivity. Three solvent systems were chosen to study their selectivity for the separation of Indium from tin: TBP, D2EHPA and a mixture of both. With either 1 M of TBP or 0.2 M of D2EHPA + 0.8 M of TBP, tin could be selectively extracted from a 1.5 M HCl solution of this metal. D2EHPA extracts both Indium and tin from H2SO4 media but Indium could be selectively stripped with HCl from the loaded D2EHPA. Based on these results, a scheme for separating and concentrating Indium from ITO by solvent extraction is proposed. The scheme includes dissolving ITO into 1 M of H2SO4, then extracting Indium and tin to D2EHPA followed by selective stripping of Indium into 1.5 M of HCl. With this process, HCl solution containing 12.2 g/L of Indium could be achieved.
T Noda - One of the best experts on this subject based on the ideXlab platform.
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evolution of end of range damage and transient enhanced diffusion of Indium in silicon
Journal of Applied Physics, 2002Co-Authors: T NodaAbstract:Correlation of evolution of end-of-range (EOR) damage and transient enhanced diffusion (TED) of Indium has been studied by secondary ion mass spectrometry and transmission electron microscopy. A physically based model of diffusion and defect growth is applied to the Indium diffusion system. Indium implantation with 200 keV, 1×1014/cm2 through a 10 nm screen oxide into 〈100〉 p-type Czochralski silicon wafer was performed. During postimplantation anneal at 750 °C for times ranging from 2 to 120 min, formation of dislocation loops and Indium segregation into loops were observed. Simulation results of evolution of EOR defects show that there is a period that {311} defects dissolve and release free interstitials before the Ostwald ripening step of EOR dislocation loops. Our diffusion model that contains the interaction between Indium and loops shows the Indium pileup to the loops. Indium segregation to loops occurs at a pure growth step of loops and continues during the Ostwald ripening step. Although dislocat...
Peter B. Griffin - One of the best experts on this subject based on the ideXlab platform.
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Indium transient enhanced diffusion
Applied Physics Letters, 1998Co-Authors: Peter B. Griffin, Min Cao, P. Vande Voorde, Y.-l. Chang, Wayne GreeneAbstract:Indium, an acceptor dopant in silicon, is a large atom with a low diffusion coefficient potentially suitable for doping the channel of transistors. Systematic experiments are described which measure the susceptibility of Indium to transient enhanced diffusion caused by ion implant damage introduced during the transistor fabrication process. We find that Indium diffusion is dramatically enhanced by a source of interstitials and that the amount of enhancement is comparable to that seen for boron. Indium is preferable as a channel dopant not because of its diffusion behavior, but rather because a narrow ion implanted distribution can be obtained using the heavy Indium ion, giving a more steeply retrograde profile than can be achieved by boron doping. These results help clarify the physics of Indium and boron doping in small devices.
Jongyoung Kim - One of the best experts on this subject based on the ideXlab platform.
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recovery of Indium from etching waste by solvent extraction and electrolytic refining
Hydrometallurgy, 2011Co-Authors: Hee Nam Kang, Jinyoung Lee, Jongyoung KimAbstract:Abstract A large amount of an etching waste containing Indium is wasted by plants manufacturing liquid crystal displays. In this study, the recovery of Indium from the etching waste by solvent extraction and electrolytic refining was investigated. Initially, major impurities, such as aluminum and molybdenum, were removed by dissolution using sodium hydroxide. From the resulting etching cake, solvent extraction of Indium was studied for the extractant of PC88A. Indium was extracted efficiently in an acidity range of 0.1 to 0.5 mol/dm3 (MH+). PC88A extracts Indium, aluminium, molybdenium, and iron from the HCl medium, but Indium could be selectively stripped from the loaded solvent. The conditions for continuous running on a pilot scale using PC88A were obtained. The resulting Indium solution was further purified to metal by electrolytic refining so that the final purity of the Indium metal was 99.997%.
