The Experts below are selected from a list of 537807 Experts worldwide ranked by ideXlab platform

Noriaki Okamoto - One of the best experts on this subject based on the ideXlab platform.

  • Crystallization‐Induced Stress in phosphorus‐doped amorphous silicon thin films
    Journal of Applied Physics, 1994
    Co-Authors: Hideo Miura, Noriaki Okamoto
    Abstract:

    The effect of phosphorus doping on the crystallization‐Induced Stress of silicon thin films is investigated experimentally using a scanning laser microscope. Though the intrinsic Stress of the phosphorus‐doped amorphous silicon films and the crystallization‐Induced Stress of the films do not change, regardless of the doped phosphorus concentration, the final residual Stress of the film after full annealing depends on the phosphorus concentration. The final Stress decreases by increasing the dopant concentration. In addition, phosphorus doping lowers the crystallization temperature of the amorphous silicon thin films. The existing phosphorus at the interface of the film and the base oxide film is found to change the crystallization mechanism and the magnitude of the Stress developed.

  • CRYSTALLIZATION-Induced Stress IN PHOSPHORUS-DOPED AMORPHOUS SILICON THIN FILMS
    Journal of Applied Physics, 1994
    Co-Authors: Hideo Miura, Noriaki Okamoto
    Abstract:

    The effect of phosphorus doping on the crystallization‐Induced Stress of silicon thin films is investigated experimentally using a scanning laser microscope. Though the intrinsic Stress of the phosphorus‐doped amorphous silicon films and the crystallization‐Induced Stress of the films do not change, regardless of the doped phosphorus concentration, the final residual Stress of the film after full annealing depends on the phosphorus concentration. The final Stress decreases by increasing the dopant concentration. In addition, phosphorus doping lowers the crystallization temperature of the amorphous silicon thin films. The existing phosphorus at the interface of the film and the base oxide film is found to change the crystallization mechanism and the magnitude of the Stress developed.

Hideo Miura - One of the best experts on this subject based on the ideXlab platform.

  • Crystallization‐Induced Stress in phosphorus‐doped amorphous silicon thin films
    Journal of Applied Physics, 1994
    Co-Authors: Hideo Miura, Noriaki Okamoto
    Abstract:

    The effect of phosphorus doping on the crystallization‐Induced Stress of silicon thin films is investigated experimentally using a scanning laser microscope. Though the intrinsic Stress of the phosphorus‐doped amorphous silicon films and the crystallization‐Induced Stress of the films do not change, regardless of the doped phosphorus concentration, the final residual Stress of the film after full annealing depends on the phosphorus concentration. The final Stress decreases by increasing the dopant concentration. In addition, phosphorus doping lowers the crystallization temperature of the amorphous silicon thin films. The existing phosphorus at the interface of the film and the base oxide film is found to change the crystallization mechanism and the magnitude of the Stress developed.

  • CRYSTALLIZATION-Induced Stress IN PHOSPHORUS-DOPED AMORPHOUS SILICON THIN FILMS
    Journal of Applied Physics, 1994
    Co-Authors: Hideo Miura, Noriaki Okamoto
    Abstract:

    The effect of phosphorus doping on the crystallization‐Induced Stress of silicon thin films is investigated experimentally using a scanning laser microscope. Though the intrinsic Stress of the phosphorus‐doped amorphous silicon films and the crystallization‐Induced Stress of the films do not change, regardless of the doped phosphorus concentration, the final residual Stress of the film after full annealing depends on the phosphorus concentration. The final Stress decreases by increasing the dopant concentration. In addition, phosphorus doping lowers the crystallization temperature of the amorphous silicon thin films. The existing phosphorus at the interface of the film and the base oxide film is found to change the crystallization mechanism and the magnitude of the Stress developed.

Akito Y. Kawahara - One of the best experts on this subject based on the ideXlab platform.

  • Predator-Induced Stress responses in insects: A review.
    Journal of insect physiology, 2020
    Co-Authors: Scott D. Cinel, Daniel A. Hahn, Akito Y. Kawahara
    Abstract:

    Predators can induce extreme Stress and profound physiological responses in prey. Insects are the most dominant animal group on Earth and serve as prey for many different predators. Although insects have an extraordinary diversity of anti-predator behavioral and physiological responses, predator-Induced Stress has not been studied extensively in insects, especially at the molecular level. Here, we review the existing literature on physiological predator-Induced Stress responses in insects and compare what is known about insect Stress to vertebrate Stress systems. We conclude that many unrelated insects share a baseline pathway of predator-Induced Stress responses that we refer to as the octopamine-adipokinetic hormone (OAH) axis. We also present best practices for studying predator-Induced Stress responses in prey insects. We encourage investigators to compare neurophysiological responses to predator-related Stress at the organismal, neurohormonal, tissue, and cellular levels within and across taxonomic groups. Studying Stress-response variation between ecological contexts and across taxonomic levels will enable the field to build a holistic understanding of, and distinction between, taxon- and stimulus-specific responses relative to universal Stress responses.

Junlan Wang - One of the best experts on this subject based on the ideXlab platform.

  • finite element simulation of cell substrate decohesion by laser Induced Stress waves
    Journal of The Mechanical Behavior of Biomedical Materials, 2010
    Co-Authors: Phillip Miller, Lili Hu, Junlan Wang
    Abstract:

    Abstract Fundamental to the development and application of biomedical devices is an understanding of the adhesion of cells to substrates. There are many experimental techniques and papers dedicated to the study of cell adhesion. This work aims to elucidate on the cell detachment mechanism in a recently reported cell adhesion measurement experiment by laser-Induced Stress wave technique. In the experiment the absorption of an Nd:YAG laser pulse generates a Stress wave of nanoseconds duration that interacts with and detaches the cell adhered to a Si substrate. Due to the ultra-short timescale involved in the experiment, details of the detachment process were not readily observable. In this work, dynamic finite element method is used to simulate the cell–substrate decohesion process under the laser-Induced Stress wave loading. The results show that the combined effect of nanosecond Stress wave pulse and the specific cell geometry results in a complex Stress–strain state along the cell–substrate interface. The principal failure mechanism is large interfacial strains realized from the cell’s tendency to spread and elongate on the substrate as a result of substrate acceleration. The cells behave like a soft elastic solid during the detachment process due to the large difference between their characteristic response time and the ultra-short duration of the applied Stress wave. Evolution of the cell geometry from hydrophobic to hydrophilic contact results in the same detachment process.

  • Cell adhesion measurement by laser-Induced Stress waves
    Journal of Applied Physics, 2006
    Co-Authors: Xuan Zhang, Phillip Miller, Mihrimah Ozkan, Cengiz S. Ozkan, Junlan Wang
    Abstract:

    Cell adhesion is a fundamental property of living cells and influences cell morphology, proliferation, and differentiation. The affinity of cells to relevant substrates plays an important role in tissue response to implanted devices and tissue regeneration. Directivity and precisely quantifying cell adhesion are paramount to the successful development of biomedical and hybrid devices. In this work, a laser-Induced Stress wave technique previously developed for thin solid film adhesion measurement is modified to investigate the cell-substrate adhesion. High-amplitude short-duration Stress wave pulses Induced by laser pulse absorption were used to detach cells from the substrate. The results obtained in this work proved the laser-Induced Stress wave technique to be an effective means for investigating the adhesion between biological cells and inorganic substrates.

Jeannot Trampert - One of the best experts on this subject based on the ideXlab platform.

  • effects of Induced Stress on seismic waves validation based on ab initio calculations
    Journal of Geophysical Research, 2019
    Co-Authors: Jeroen Tromp, Michel L Marcondes, Renata M Wentzcovitch, Jeannot Trampert
    Abstract:

    When a continuum is subjected to an Induced Stress, the equations that govern seismic wave propagation are modified in two ways. First, the equation of conservation of linear momentum gains terms related to the Induced deviatoric Stress, and, second, the elastic constitutive relationship acquires terms linear in the Induced Stress. This continuum mechanics theory makes testable predictions with regard to Stress-Induced changes in the elastic tensor. Specifically, it predicts that Induced compression linearly affects the preStressed moduli with a slope determined by their local adiabatic pressure derivatives and that Induced deviatoric Stress produces anisotropic compressional and shear wave speeds. In this article we successfully compare such predictions against ab initio mineral physics calculations for NaCl and MgO.

  • Effects of Induced Stress on seismic forward modelling and inversion
    Geophysical Journal International, 2018
    Co-Authors: Jeroen Tromp, Jeannot Trampert
    Abstract:

    We demonstrate how effects of Induced Stress may be incorporated in seismic modelling and inversion. Our approach is motivated by the accommodation of pre-Stress in global seismology. Induced Stress modifies both the equation of motion and the constitutive relationship. The theory predicts that Induced pressure linearly affects the unStressed isotropic moduli with a slope determined by their adiabatic pressure derivatives. The Induced deviatoric Stress produces anisotropic compressional and shear wave speeds; the latter result in shear wave splitting. For forward modelling purposes, we determine the weak form of the equation of motion under Induced Stress. In the context of the inverse problem, we determine Induced Stress sensitivity kernels, which may be used for adjoint tomography. The theory is illustrated by considering 2-D propagation of SH waves and related Frechet derivatives based on a spectral-element method.