The Experts below are selected from a list of 7011 Experts worldwide ranked by ideXlab platform
Kris Myny - One of the best experts on this subject based on the ideXlab platform.
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Electrical Characterization of Flexible InGaZnO Transistors and 8-b Transponder Chip Down to a Bending Radius of 2 mm
IEEE Transactions on Electron Devices, 2015Co-Authors: Ashutosh Kumar Tripathi, Kimberley Wezenberg, Kris Myny, Gerwin H. GelinckAbstract:In this paper, we present the fabrication and characterization of highly flexible indium-gallium-zinc-oxide (IGZO)-based thin-film transistors (TFTs) and integrated circuits on a transparent and thin polymer substrate. Mechanical reliability tests are performed under bending conditions down to a bending radius of 2 mm. All the TFT parameters show only a weak dependence on mechanical strain. TFTs can withstand bending strain up to 0.75% without any significant change in the device operation. Mechanical reliability is further demonstrated to a higher TFT Integration Level by ring oscillators and 8-b transponder chips operating at a bending radius of 2 mm.
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low voltage gallium indium zinc oxide thin film transistors based logic circuits on thin plastic foil building blocks for radio frequency identification application
Applied Physics Letters, 2011Co-Authors: Ashutosh Tripathi, Kris Myny, Edsger C P Smits, J B P H Van Der Putten, M Van Neer, Soeren Steudel, Peter Vicca, K Oneill, E Van Veenendaal, Jan GenoeAbstract:In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The Integration Level is about 300 transistors. © 2011 American Institute of Physics.
L. White - One of the best experts on this subject based on the ideXlab platform.
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ICSM - A study of Integration testing and software regression at the Integration Level
Proceedings. Conference on Software Maintenance 1990, 1990Co-Authors: H.k.n. Leung, L. WhiteAbstract:The authors identify the common errors and faults in combining modules into a working unit. They also make practical recommendations on test selection for Integration testing and utilize these recommendations for regression testing at the Integration Level. With emphasis on reusing the previous test cases and retesting only the parts that are modified, one can reduce the testing expenses. The concept of 'firewall' is proposed to assist the tester in focusing on that part of the system where new errors may have been introduced by a correction or a design change. An experiment is presented in which an application of strategy is compared with the 'retest-all' strategy. By applying the approach for test selection, it is possible to discover all errors found by the retest-all strategy by executing only 35% of the total number of test cases. >
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A study of Integration testing and software regression at the Integration Level
Proceedings. Conference on Software Maintenance 1990, 1990Co-Authors: H.k.n. Leung, L. WhiteAbstract:The authors identify the common errors and faults in combining modules into a working unit. They also make practical recommendations on test selection for Integration testing and utilize these recommendations for regression testing at the Integration Level. With emphasis on reusing the previous test cases and retesting only the parts that are modified, one can reduce the testing expenses. The concept of 'firewall' is proposed to assist the tester in focusing on that part of the system where new errors may have been introduced by a correction or a design change. An experiment is presented in which an application of strategy is compared with the 'retest-all' strategy. By applying the approach for test selection, it is possible to discover all errors found by the retest-all strategy by executing only 35% of the total number of test cases.
Jan Genoe - One of the best experts on this subject based on the ideXlab platform.
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low voltage gallium indium zinc oxide thin film transistors based logic circuits on thin plastic foil building blocks for radio frequency identification application
Applied Physics Letters, 2011Co-Authors: Ashutosh Tripathi, Kris Myny, Edsger C P Smits, J B P H Van Der Putten, M Van Neer, Soeren Steudel, Peter Vicca, K Oneill, E Van Veenendaal, Jan GenoeAbstract:In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The Integration Level is about 300 transistors. © 2011 American Institute of Physics.
M. Aikawa - One of the best experts on this subject based on the ideXlab platform.
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highly integrated three dimensional mmic technology applied to novel masterslice gaas and si mmics
IEEE Journal of Solid-state Circuits, 1997Co-Authors: T. Tokumitsu, N Hirano, K Yamasaki, C Yamaguchi, Kenjiro Nishikawa, M. AikawaAbstract:A novel three-dimensional (3-D) masterslice monolithic microwave integrated circuit (MMIC) is presented that significantly reduces turnaround time and cost for multifunction MMIC production. This MMIC incorporates an artificial ground metal for effective selection of master array elements on the wafer surface, resulting in various MMIC implementations on a master-arrayed footprint in association with thin polyimide and metal layers over it. Additionally, the 3-D miniature circuit components of less than 0.4 mm/sup 2/ in size provide a very high Integration Level. To clearly show the advantages, a 20-GHz-band receiver MMIC was implemented on a master array with 6/spl times/3 array units including a total of 36 MESFETs in a 1.78/spl times/1.78 mm area. Details of the miniature circuit components and the design, closely related to the fabrication process, are also presented. The receiver MMIC exhibited a 19-dB conversion gain with an associated 6.5-dB noise figure from 17 to 24 GHz and an Integration Level four times higher than conventional planar MMICs. This technology promises about a 90% cost reduction for MMIC because it can be similarly applied to large-scale Si wafers with the aid of an artificial ground.
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Highly integrated three-dimensional MMIC single-chip receiver and transmitter
1996 IEEE MTT-S International Microwave Symposium Digest, 1996Co-Authors: I. Toyoda, T. Tokumitsu, M. AikawaAbstract:A three-dimensional (3D) MMIC structure with thin polyimide-film layers on wafers significantly increases the Integration Level of MMICs. We newly developed 9.2-12 GHz receiver and 9.5-14 GHz transmitter chips with 20 dB gain using 3D MMIC technology. The Integration Levels of these chips are nearly three times as high as those of conventional planar ones.
Gerwin H. Gelinck - One of the best experts on this subject based on the ideXlab platform.
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Electrical Characterization of Flexible InGaZnO Transistors and 8-b Transponder Chip Down to a Bending Radius of 2 mm
IEEE Transactions on Electron Devices, 2015Co-Authors: Ashutosh Kumar Tripathi, Kimberley Wezenberg, Kris Myny, Gerwin H. GelinckAbstract:In this paper, we present the fabrication and characterization of highly flexible indium-gallium-zinc-oxide (IGZO)-based thin-film transistors (TFTs) and integrated circuits on a transparent and thin polymer substrate. Mechanical reliability tests are performed under bending conditions down to a bending radius of 2 mm. All the TFT parameters show only a weak dependence on mechanical strain. TFTs can withstand bending strain up to 0.75% without any significant change in the device operation. Mechanical reliability is further demonstrated to a higher TFT Integration Level by ring oscillators and 8-b transponder chips operating at a bending radius of 2 mm.
