The Experts below are selected from a list of 300 Experts worldwide ranked by ideXlab platform
Jae Chul Park - One of the best experts on this subject based on the ideXlab platform.
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The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors
Electron Device Letters, IEEE, 2012Co-Authors: Jae Chul Park, Sang-wook Kim, Chang Jung Kim, Ho Nyeon LeeAbstract:We investigated the effects of gadolinium (Gd) incorporation into indium-zinc-oxide (IZO) thin-film transistors (TFTs) using radio-frequency cosputtering of IZO and Gd. A gadolinium-indium-zinc-oxide (Gd-IZO) TFT with 2.4 at.% Gd content had saturation-mode field-effect mobility, threshold voltage, and switching ratio (on current/off current) of 6.6 cm2V-1s-1, 1.04 V, and on the order of 107, respectively, after thermal annealing at 250 °C. A Gd-IZO TFT with 2.4 at.% Gd content showed better switching performance and thermal stability than pure IZO TFTs due to stable Ionic Bond between Gd and O.
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Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors
Electron Device Letters, IEEE, 2012Co-Authors: Jae Chul Park, Sang-wook Kim, Chang Jung Kim, Ho Nyeon LeeAbstract:We fabricated lanthanum indium zinc oxide (IZO) (La-IZO) thin-film transistors (TFTs) using radio frequency cosputtering of IZO and lanthanum. The field-effect mobility and switching ratio of the La-IZO TFTs were 4.2 cm2·V-1·s-1 and on the order of 108, respectively, before thermal annealing and 3.02 cm2·V-1·s-1 and on the order of 1010, respectively, after thermal annealing at 150°C in air. Our La-IZO TFTs had better thermal stability than pure-IZO TFTs due to the stable Ionic Bond between La and O.
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The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors
IEEE Electron Device Letters, 2012Co-Authors: Jae Chul ParkAbstract:We investigated the effects of gadolinium (Gd) incorporation into indium-zinc-oxide (IZO) thin-film transistors (TFTs) using radio-frequency cosputtering of IZO and Gd. A gadolinium-indium-zinc-oxide (Gd-IZO) TFT with 2.4 at.% Gd content had saturation-mode field-effect mobility, threshold voltage, and switching ratio (on current/off current) of 6.6 cm2V-1s-1, 1.04 V, and on the order of 107, respectively, after thermal annealing at 250 °C. A Gd-IZO TFT with 2.4 at.% Gd content showed better switching performance and thermal stability than pure IZO TFTs due to stable Ionic Bond between Gd and O.
Ho Nyeon Lee - One of the best experts on this subject based on the ideXlab platform.
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The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors
Electron Device Letters, IEEE, 2012Co-Authors: Jae Chul Park, Sang-wook Kim, Chang Jung Kim, Ho Nyeon LeeAbstract:We investigated the effects of gadolinium (Gd) incorporation into indium-zinc-oxide (IZO) thin-film transistors (TFTs) using radio-frequency cosputtering of IZO and Gd. A gadolinium-indium-zinc-oxide (Gd-IZO) TFT with 2.4 at.% Gd content had saturation-mode field-effect mobility, threshold voltage, and switching ratio (on current/off current) of 6.6 cm2V-1s-1, 1.04 V, and on the order of 107, respectively, after thermal annealing at 250 °C. A Gd-IZO TFT with 2.4 at.% Gd content showed better switching performance and thermal stability than pure IZO TFTs due to stable Ionic Bond between Gd and O.
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Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors
Electron Device Letters, IEEE, 2012Co-Authors: Jae Chul Park, Sang-wook Kim, Chang Jung Kim, Ho Nyeon LeeAbstract:We fabricated lanthanum indium zinc oxide (IZO) (La-IZO) thin-film transistors (TFTs) using radio frequency cosputtering of IZO and lanthanum. The field-effect mobility and switching ratio of the La-IZO TFTs were 4.2 cm2·V-1·s-1 and on the order of 108, respectively, before thermal annealing and 3.02 cm2·V-1·s-1 and on the order of 1010, respectively, after thermal annealing at 150°C in air. Our La-IZO TFTs had better thermal stability than pure-IZO TFTs due to the stable Ionic Bond between La and O.
Sang-wook Kim - One of the best experts on this subject based on the ideXlab platform.
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The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors
Electron Device Letters, IEEE, 2012Co-Authors: Jae Chul Park, Sang-wook Kim, Chang Jung Kim, Ho Nyeon LeeAbstract:We investigated the effects of gadolinium (Gd) incorporation into indium-zinc-oxide (IZO) thin-film transistors (TFTs) using radio-frequency cosputtering of IZO and Gd. A gadolinium-indium-zinc-oxide (Gd-IZO) TFT with 2.4 at.% Gd content had saturation-mode field-effect mobility, threshold voltage, and switching ratio (on current/off current) of 6.6 cm2V-1s-1, 1.04 V, and on the order of 107, respectively, after thermal annealing at 250 °C. A Gd-IZO TFT with 2.4 at.% Gd content showed better switching performance and thermal stability than pure IZO TFTs due to stable Ionic Bond between Gd and O.
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Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors
Electron Device Letters, IEEE, 2012Co-Authors: Jae Chul Park, Sang-wook Kim, Chang Jung Kim, Ho Nyeon LeeAbstract:We fabricated lanthanum indium zinc oxide (IZO) (La-IZO) thin-film transistors (TFTs) using radio frequency cosputtering of IZO and lanthanum. The field-effect mobility and switching ratio of the La-IZO TFTs were 4.2 cm2·V-1·s-1 and on the order of 108, respectively, before thermal annealing and 3.02 cm2·V-1·s-1 and on the order of 1010, respectively, after thermal annealing at 150°C in air. Our La-IZO TFTs had better thermal stability than pure-IZO TFTs due to the stable Ionic Bond between La and O.
Chang Jung Kim - One of the best experts on this subject based on the ideXlab platform.
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The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors
Electron Device Letters, IEEE, 2012Co-Authors: Jae Chul Park, Sang-wook Kim, Chang Jung Kim, Ho Nyeon LeeAbstract:We investigated the effects of gadolinium (Gd) incorporation into indium-zinc-oxide (IZO) thin-film transistors (TFTs) using radio-frequency cosputtering of IZO and Gd. A gadolinium-indium-zinc-oxide (Gd-IZO) TFT with 2.4 at.% Gd content had saturation-mode field-effect mobility, threshold voltage, and switching ratio (on current/off current) of 6.6 cm2V-1s-1, 1.04 V, and on the order of 107, respectively, after thermal annealing at 250 °C. A Gd-IZO TFT with 2.4 at.% Gd content showed better switching performance and thermal stability than pure IZO TFTs due to stable Ionic Bond between Gd and O.
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Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors
Electron Device Letters, IEEE, 2012Co-Authors: Jae Chul Park, Sang-wook Kim, Chang Jung Kim, Ho Nyeon LeeAbstract:We fabricated lanthanum indium zinc oxide (IZO) (La-IZO) thin-film transistors (TFTs) using radio frequency cosputtering of IZO and lanthanum. The field-effect mobility and switching ratio of the La-IZO TFTs were 4.2 cm2·V-1·s-1 and on the order of 108, respectively, before thermal annealing and 3.02 cm2·V-1·s-1 and on the order of 1010, respectively, after thermal annealing at 150°C in air. Our La-IZO TFTs had better thermal stability than pure-IZO TFTs due to the stable Ionic Bond between La and O.
Peter A. Rubenstein - One of the best experts on this subject based on the ideXlab platform.
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importance of a lys113 glu195 intermonomer Ionic Bond in f actin stabilization and regulation by yeast formins bni1p and bnr1p
Journal of Biological Chemistry, 2013Co-Authors: Melissa Mckane, Peter A. RubensteinAbstract:Abstract Proper actin cytoskeletal function requires actin's ability to generate a stable filament and requires that this reaction be regulated by actin-binding proteins via allosteric effects on the actin. A proposed Ionic interaction in the actin filament interior between Lys113 of one monomer and Glu195 of a monomer in the apposing strand potentially fosters cross-strand stabilization and allosteric communication between the filament interior and exterior. We interrupted the potential interaction by creating either K113E or E195K actin. By combining the two, we also reversed the interaction with a K113E/E195K (E/K) mutant. In all cases, we isolated viable cells expressing only the mutant actin. Either single mutant cell displays significantly decreased growth in YPD medium. This deficit is rescued in the double mutant. All three mutants display abnormal phalloidin cytoskeletal staining. K113E actin exhibits a critical concentration of polymerization 4 times higher than WT actin, nucleates more poorly, and forms shorter filaments. Restoration of the Ionic Bond, E/K, eliminates most of these problems. E195K actin behaves much more like WT actin, indicating accommodation of the neighboring lysines. Both Bni1 and Bnr1 formin FH1-FH2 fragment accelerate polymerization of WT, E/K, and to a lesser extent E195K actin. Bni1p FH1-FH2 dramatically inhibits K113E actin polymerization, consistent with barbed end capping. However, Bnr1p FH1-FH2 restores K113E actin polymerization, forming single filaments. In summary, the proposed Ionic interaction plays an important role in filament stabilization and in the propagation of allosteric changes affecting formin regulation in an isoform-specific fashion.
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Importance of a Lys113–Glu195 Intermonomer Ionic Bond in F-actin Stabilization and Regulation by Yeast Formins Bni1p and Bnr1p
Journal of Biological Chemistry, 2013Co-Authors: Melissa Mckane, Peter A. RubensteinAbstract:Abstract Proper actin cytoskeletal function requires actin's ability to generate a stable filament and requires that this reaction be regulated by actin-binding proteins via allosteric effects on the actin. A proposed Ionic interaction in the actin filament interior between Lys113 of one monomer and Glu195 of a monomer in the apposing strand potentially fosters cross-strand stabilization and allosteric communication between the filament interior and exterior. We interrupted the potential interaction by creating either K113E or E195K actin. By combining the two, we also reversed the interaction with a K113E/E195K (E/K) mutant. In all cases, we isolated viable cells expressing only the mutant actin. Either single mutant cell displays significantly decreased growth in YPD medium. This deficit is rescued in the double mutant. All three mutants display abnormal phalloidin cytoskeletal staining. K113E actin exhibits a critical concentration of polymerization 4 times higher than WT actin, nucleates more poorly, and forms shorter filaments. Restoration of the Ionic Bond, E/K, eliminates most of these problems. E195K actin behaves much more like WT actin, indicating accommodation of the neighboring lysines. Both Bni1 and Bnr1 formin FH1-FH2 fragment accelerate polymerization of WT, E/K, and to a lesser extent E195K actin. Bni1p FH1-FH2 dramatically inhibits K113E actin polymerization, consistent with barbed end capping. However, Bnr1p FH1-FH2 restores K113E actin polymerization, forming single filaments. In summary, the proposed Ionic interaction plays an important role in filament stabilization and in the propagation of allosteric changes affecting formin regulation in an isoform-specific fashion.
