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Bharat Bhushan - One of the best experts on this subject based on the ideXlab platform.
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Effect of carbon nanohorns on nanofriction and wear reduction in dry and liquid environments.
Journal of colloid and interface science, 2013Co-Authors: Dave Maharaj, Bharat Bhushan, Sumio IijimaAbstract:Nano-objects in dry and liquid conditions have shown reductions in friction and wear on the macroscale. In this research, for the first time, carbon nanohorn (CNH) nanoparticles were studied on the nanoscale under dry and low viscosity liquid environments for their effect on friction and wear reduction. The data were compared with gold (Au) nanoparticles and molybdenum disulfide (MoS2) and tungsten disulfide (WS2) nanotubes. Atomic Force microscopy (AFM) experiments on the nanoscale were performed in single-nano-object contact with an AFM tip, where nano-objects were laterally manipulated and multiple-nano-object contact with a tip attached to a glass sphere sliding over several nano-objects. Wear tests were performed on the nanoscale with an AFM as well as on the macroscale by using a ball-on-flat tribometer to relate friction and wear reduction on both scales. Results indicate CNH nanoparticles contribute to friction and wear reduction due to the reduced contact area and low Meniscus Force contribution.
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effect of deposition gas ratio rf power and substrate temperature on the charging discharging processes in pecvd silicon nitride films for electrostatic nems mems reliability using atomic Force microscopy
IEEE\ ASME Journal of Microelectromechanical Systems, 2011Co-Authors: Usama Zaghloul, Bharat Bhushan, G Papaioannou, Haixia Wang, F Coccetti, P Pons, R PlanaAbstract:The dependence of the electrical properties of silicon nitride, which is a commonly used dielectric in nano- and micro-electromechanical systems (NEMS and MEMS), on the deposition conditions used to prepare it and, consequently, on material stoichiometry has not been fully understood. In this paper, the influence of plasma-enhanced chemical vapor deposition conditions on the dielectric charging of films is investigated. The work targets mainly the dielectric-charging phenomenon which constitutes a major failure mechanism in electrostatically driven NEMS/MEMS devices and particularly in capacitive MEMS switches. The charging/discharging processes are studied using two nanoscale characterization techniques: Kelvin probe Force microscopy (KPFM) and, for the first time, Force-distance curve (FDC) measurements. KPFM is used to investigate dielectric charging at the level of a single asperity, while FDC is employed to measure the multiphysics coupling between the charging phenomenon and tribological issues, mainly Meniscus Force. The electrical properties of the films obtained from both techniques show a very good correlation. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy material characterization techniques are also used to determine the compositions and chemical bonds, respectively, of the films. An attempt to correlate between the chemical and electrical properties of films is made.
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Effect of deposition reactive gas ratio, RF power and substrate temperature on the charging/discharging processes in PECVD silicon nitride films based on induced surface potential and adhesive Force measurements using atomic Force microscopy
Journal of Microelectromechanical Systems, 2011Co-Authors: Heiba Zaghloul, Bharat Bhushan, G Papaioannou, Haixia Wang, F Coccetti, P Pons, R PlanaAbstract:The dependence of the electrical properties of silicon nitride, which is a commonly used dielectric in nanoand micro-electromechanical systems (NEMS and MEMS), on the deposition conditions used to prepare it and, consequently, on material stoichiometry has not been fully understood. In this paper, the influence of plasma-enhanced chemical vapor deposition conditions on the dielectric charging of SiNx films is investigated. The work targets mainly the dielectriccharging phenomenon which constitutes a major failure mechanism in electrostatically driven NEMS/MEMS devices and particularly in capacitive MEMS switches. The charging/discharging processes are studied using two nanoscale characterization techniques: Kelvin probe Force microscopy (KPFM) and, for the first time, Force-distance curve (FDC) measurements. KPFM is used to investigate dielectric charging at the level of a single asperity, while FDC is employed to measure the multiphysics coupling between the charging phenomenon and tribological issues, mainly Meniscus Force. The electrical properties of the SiNx films obtained from both techniques show a very good correlation. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy material characterization techniques are also used to determine the compositions and chemical bonds, respectively, of the SiNx films. An attempt to correlate between the chemical and electrical properties of SiNx films is made.
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Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy
Journal of Microelectromechanical Systems, 2011Co-Authors: Usama Zaghloul, Bharat Bhushan, Haixia Wang, F Coccetti, P Pons, George J. Papaioannou, R PlanaAbstract:The dependence of the electrical properties of silicon nitride, which is a commonly used dielectric in nano- and micro-electromechanical systems (NEMS and MEMS), on the deposition conditions used to prepare it and, consequently, on material stoichiometry has not been fully understood. In this paper, the influence of plasma-enhanced chemical vapor deposition conditions on the dielectric charging of films is investigated. The work targets mainly the dielectric-charging phenomenon which constitutes a major failure mechanism in electrostatically driven NEMS/MEMS devices and particularly in capacitive MEMS switches. The charging/discharging processes are studied using two nanoscale characterization techniques: Kelvin probe Force microscopy (KPFM) and, for the first time, Force-distance curve (FDC) measurements. KPFM is used to investigate dielectric charging at the level of a single asperity, while FDC is employed to measure the multiphysics coupling between the charging phenomenon and tribological issues, mainly Meniscus Force. The electrical properties of the films obtained from both techniques show a very good correlation. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy material characterization techniques are also used to determine the compositions and chemical bonds, respectively, of the films. An attempt to correlate between the chemical and electrical properties of films is made.
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multiscale dissipative mechanisms and hierarchical surfaces friction superhydrophobicity and biomimetics
2008Co-Authors: Mikhail Nosonovskiĭ, Bharat BhushanAbstract:Surface Roughness and Hierarchical Friction Mechanisms.- Rough Surface Topography.- Mechanisms of Dry Friction, Their Scaling and Linear Properties.- Friction as a Nonlinear Hierarchical Phenomenon.- Solid-Liquid Friction and Superhydrophobicity.- Solid-Liquid Interaction and Capillary Effects.- Roughness-Induced Superhydrophobicity.- Stability of the Composite Interface, Roughness Optimization and Meniscus Force.- Cassie-Wenzel Wetting Regime Transition.- Underwater Superhydrophobicity and Dynamic Effects.- Biological and Biomimetic Surfaces.- Lotus-Effect and Water-Repellent Surfaces in Nature.- Artificial (Biomimetic) Superhydrophobic Surfaces.- Gecko-Effect and Smart Adhesion.- Other Biomimetic Surfaces.- Outlook.
Takahisa Kato - One of the best experts on this subject based on the ideXlab platform.
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Effects of surface roughness on Meniscus Force for nano-Meniscus bridge
Japanese journal of tribology, 2004Co-Authors: Masahiro Kawaguchi, Koichi Tanaka, Takahisa KatoAbstract:A nanoscale Meniscus bridge is formed when ultrathin liquid films exist in the gap between two solid surfaces. Due to conventional bulk theory, an adhesive Force caused by the Meniscus bridge is given as a function of bridge length, curvature of surfaces, surface separation, and surface tension of liquid film. On the other hand, effects of surface roughness on a Meniscus bridge must be introduced to the theory or model for the Meniscus bridge when the surface roughness is comparable with the length of a Meniscus bridge. In this study, experiments and modeling for a Meniscus bridge formed between rough and smooth surfaces are performed. We will show that the maximum adhesive Force between two surfaces depends on the height of the Meniscus bridge taking the geometry of the rough surface into account.
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Measurement on the shear properties of liquid nanoMeniscus bridge
Tribology International, 2003Co-Authors: Junho Choi, Takahisa KatoAbstract:Abstract The shear properties of liquid nanoMeniscus bridge were measured by a nanorheometer which was developed recently. The Meniscus bridges of PFPE (Perfluoropolyether) Z-dol were formed between two glass spheres. One was mounted on a piezo actuator and moved sinusoidally in the shear direction against the other which was mounted on a rectangular-type microcantilever. The diameters of the spheres were 90 μm and 20 μm, respectively. The induced oscillatory motions of the cantilever-sphere assembly were detected via a two phase lock-in amplifier with respect to the modulation frequency and the surface separation. The amplitude response was interpreted as elastic characteristics and phase shift as damping characteristics of the liquid Meniscus bridge. The experimental results were qualitatively compared to those of the normal oscillatory experiments. The lateral Meniscus Force was much smaller than the normal case, which affected directly the amplitude ratio and phase shift of the system. In results, the system showed more viscous behavior compared to the normal case. However, the system still showed the excess stiffness and excess damping at low frequencies and large surface separations, which was originated from the existence of the liquid Meniscus bridge. The excess stiffness was directly attributed to the lateral Meniscus Force and the excess damping to the moving contact line.
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Influence of the Meniscus Force for contact recording head dynamics over a randomly undulating disk surface
IEEE Transactions on Magnetics, 2003Co-Authors: Hiroshige Matsuoka, Shigehisa Fukui, Takahisa KatoAbstract:Dynamic characteristics of a tripad contact recording head over a random undulation disk surface are analyzed considering the surface energy of a thin liquid film lubricant. The head-suspension assembly is described in terms of a three-degrees-of-freedom (3-DOF) model. The configuration of the contact pad, the lubricant, and the disk surface is classified into four regimes, and the equations of motion for each regime considering the Meniscus Force and the contact Force are solved. It is clarified from the simulation and multiple regression results that the surface energy has significant effects on the dynamics of the contact slider.
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Dynamic Characteristics of an In-Contact Head Slider Considering Meniscus Force: Part 3—Wear Durability and Optimization of Surface Energy of Liquid Lubricant Under Perfect Contact Condition
Journal of Tribology, 2002Co-Authors: Hiroshige Matsuoka, Shigehisa Fukui, Takahisa KatoAbstract:The authors developed a computer simulator for in-contact head slider motion where a 3-DOF model of head-suspension assembly was introduced and effects of Meniscus Force between the slider and the disk were considered. The contact Force between a contact pad and a disk surface was taken into account and the dynamic characteristics of an in-contact head slider were discussed from the viewpoints of both bouncing vibration and wear durability by not only 3-DOF head-suspension assembly model over a sinusoidal disk surface undulation but also 1-DOF head-suspension assembly model over a sinusoidal disk surface undulation. In addition to the critical frequency of bouncing, the critical frequency of pressure was introduced. As a result of 3-DOF simulation and 1-DOF analysis, it was found that there exists an optimum surface energy at which the stability of bouncing vibration and wear durability becomes highest under perfect contact condition. Furthermore, the behavior of the optimum point for several design parameters were made clear.
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NanoMeniscus Forces in Undersaturated Vapors: Observable Limit of Macroscopic Characteristics
Langmuir, 2002Co-Authors: Hiroshige Matsuoka, Shigehisa Fukui, Takahisa KatoAbstract:An apparatus which can accurately measure surface Forces between solid surfaces in an atmospherecontrolled chamber has been developed. The surface Forces between crossed-cylindrical mica surfaces were measured in undersaturated vapors of various liquids (hydrocarbons, alcohols, and water) using this apparatus. The surface Forces changed gradually with an increase in the relative vapor pressure of liquid from those under dry conditions to macroscopic Meniscus Forces. To investigate the formation of the Meniscus bridge between solid surfaces, the authors introduce the critical relative vapor pressure, (p/ps)c, at which the surface adhesive Force approaches the macroscopic Meniscus Force. The Kelvin radius at this critical relative vapor pressure was on the nanometer level and was found to be dependent on the structure, molecular weight, and electrostatic nature of the molecules.
Seiichiro Higashi - One of the best experts on this subject based on the ideXlab platform.
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Development of high-yield layer transfer process of single-crystalline silicon thin films on plastic substrate and its application to multi-functional device integration
Japanese Journal of Applied Physics, 2020Co-Authors: Tomotaka Hirano, Hiroaki Hanafusa, Fumiyasu Kondo, Satoshi Nagasawa, Yuri Mizukawa, Seiichiro HigashiAbstract:We attempted hydrophilization of polyethylene terephthalate (PET) substrate surface with oxygen plasma to enhance the Meniscus Force, and the transfer yield of the SOI islands to the PET substrate was improved to 99.97% (16,376/16,380s). In addition, we succeeded in the fabrication and operation of a floating gate memory on a PET substrate below 130 °C. When the gate voltage was swept, clear hysteresis of clockwise was observed. The memory window increases from ±0.1 V to ±1.7 V with increasing sweep range of gate voltage from ±2 V to ±6 V. Also, We succeeded in the integration of single-crystalline Silicon (c-Si) complementary metal-oxide-semiconductor (CMOS) circuits and perovskite solar cells (PSC) module. C-Si CMOS ring oscillator was driven by photovoltaic of PSC module and the oscillation frequency was 8.9 MHz under illumination at 50,000 Lux.
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Single-Crystalline Si-CMOS Circuit Fabrication on Polyethylene Terephthalate Substrate by Meniscus Force-Mediated Layer Transfer
IEEE Journal of the Electron Devices Society, 2019Co-Authors: Ryutatsu Mizukami, Tomonori Yamashita, Hiroaki Hanafusa, Seiichiro HigashiAbstract:Single-crystalline silicon (sc-Si) complementary metal–oxide–semiconductor (CMOS) circuits were fabricated on a polyethylene terephthalate (PET) substrate using Meniscus Force-mediated layer transfer. The introduction of a two-step tapered SiO2 structure formed using low-dose and high-energy pillar shaping ion implantation (I/I) and self-limited SiO2 pillar etching were crucial for obtaining a high transfer yield of 99.86% and simultaneous transfer of both n- and p-channel sc-Si islands to the PET substrate. The fabricated MOS field-effect transistors exhibited a high field effect mobility of 603 cm2 V−1 s−1 (n) and 172 cm2 V−1 s−1 (p), respectively. The CMOS inverters exhibited clear input/output characteristics under a supply voltage of 2.0 V, and high-speed operation of a five-stage ring oscillator (RO) with an operating frequency of 14.6 MHz was realized. Moreover, the oscillation frequency of the RO transferred onto the PET was 3.5 times that of the non-transferred RO owing to the reduction in the parasitic capacitance.
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Formation of silicon-on-insulator layer with midair cavity for Meniscus Force-mediated layer transfer and high-performance transistor fabrication on glass
Japanese Journal of Applied Physics, 2015Co-Authors: Muneki Akazawa, Kohei Sakaike, Seiichiro HigashiAbstract:We attempted to transfer a phosphorus ion (P+)-implanted oxidized silicon-on-insulator (SOI) layer with a midair cavity to a glass substrate using Meniscus Force at a low temperature. The SiO2 column size was controlled by etching time and the minimum column size was 104 nm. The transfer yield of the implanted sample was significantly improved by decreasing the column size, and the maximum transfer yield was 95% when the implantation dose was 1 × 1015 cm−2. The causes of increasing transfer yield are considered to be the tapered SiO2 column shape and the hydrophilicity of the surface of oxidized samples with implantation. N-channel thin-film transistors (TFTs) fabricated using the films on glass at 300 °C showed a field-effect mobility of 505 cm2 V−1 s−1, a threshold voltage of 2.47 V and a subthreshold swing of 324 mV/dec. on average.
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Meniscus-Force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates
Japanese Journal of Applied Physics, 2015Co-Authors: Kohei Sakaike, Muneki Akazawa, Akitoshi Nakagawa, Seiichiro HigashiAbstract:A novel low-temperature technique for transferring a silicon-on-insulator (SOI) layer with a midair cavity (supported by narrow SiO2 columns) by Meniscus Force has been proposed, and a single-crystalline Si (c-Si) film with a midair cavity formed in dog-bone shape was successfully transferred to a poly(ethylene terephthalate) (PET) substrate at its heatproof temperature or lower. By applying this proposed transfer technique, high-performance c-Si-based complementary metal–oxide–semiconductor (CMOS) transistors were successfully fabricated on the PET substrate. The key processes are the thermal oxidation and subsequent hydrogen annealing of the SOI layer on the midair cavity. These processes ensure a good MOS interface, and the SiO2 layer works as a "blocking" layer that blocks contamination from PET. The fabricated n- and p-channel c-Si thin-film transistors (TFTs) on the PET substrate showed field-effect mobilities of 568 and 103 cm2 V−1 s−1, respectively.
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fabrication of n channel single crystalline silicon 100 thin film transistors on glass substrate by Meniscus Force mediated layer transfer technique
Japanese Journal of Applied Physics, 2014Co-Authors: Muneki Akazawa, Kohei Sakaike, Shogo Nakamura, Seiichiro HigashiAbstract:We propose a novel low-temperature layer transfer of single crystalline silicon (100) to glass substrate using Meniscus Force and midair cavity structure. Local transfer of thermally-oxidized silicon-on-insulator (SOI) layer to glass was successfully carried out at 80 °C. N-channel thin-film transistor (TFT) fabricated on glass at 300 °C showed a field-effect mobility of 1097 cm2 V−1 s−1, a threshold voltage of 1.1 V and a subthreshold swing value of 78 mV/dec. Raman scattering analysis suggests such a high mobility of TFT is originated from tensile strain introduced after gate SiO2 film deposition.
Hiroshige Matsuoka - One of the best experts on this subject based on the ideXlab platform.
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Effects of surface roughness on characteristics of liquid transfer due to breakage of liquid Meniscus bridge
Microsystem Technologies, 2016Co-Authors: Hiroshige Matsuoka, Mayu Miyamoto, Shigehisa FukuiAbstract:We investigated experimentally the effects of surface roughness on liquid transfer due to breakage of the liquid Meniscus bridge. A liquid Meniscus bridge was formed between a hemispherical glass surface (radius of curvature R = 10 mm) and a glass plate. The liquids used as test sample were ethylene glycol and n -tetradecane. The contact angles at the two solid interfaces were set the same by coating the surfaces with an oil repellent to mitigate the contact angle effects. More liquid was found to be transferred to the rougher surface, despite the contact angles being nearly the same. This phenomenon cannot be explained by the theory for smooth surfaces because the theory predicts about a 50 % transfer. Furthermore, on measuring the Force curve we found that the attractive Meniscus Force increases as surface roughness increases. We suggested that these experimental results arise from the difference in surface roughness of the two solids.
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Dynamic Meniscus models for MEMS elements
Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems, 2005Co-Authors: Hiroshige Matsuoka, S. Matsumoto, Shigehisa FukuiAbstract:The dynamics of a liquid Meniscus bridge between solid surfaces were analyzed based on the continuum lubrication theory assuming a small vibration of the spacing. The geometry of the Meniscus considered in this study was the finite Meniscus ring. The following two Meniscus models were considered: (1) the fixed boundary position of the Meniscus and variable contact angle (VCA) model and (2) the fixed contact angle and variable boundary position (VBP) model. The time-dependent Reynolds equation was solved under the boundary condition considering the Laplace pressure, assuming that the mass of the liquid in the Meniscus is conserved. It was found by linearization that the pressures and the load-carrying capacities of both models have three terms, i.e., a time-dependent squeeze term due to the viscosity of the liquid, a spring term due to the dynamic Laplace pressure and a static Meniscus Force term. The comparisons between these models and experimental results were also presented.
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Influence of the Meniscus Force for contact recording head dynamics over a randomly undulating disk surface
IEEE Transactions on Magnetics, 2003Co-Authors: Hiroshige Matsuoka, Shigehisa Fukui, Takahisa KatoAbstract:Dynamic characteristics of a tripad contact recording head over a random undulation disk surface are analyzed considering the surface energy of a thin liquid film lubricant. The head-suspension assembly is described in terms of a three-degrees-of-freedom (3-DOF) model. The configuration of the contact pad, the lubricant, and the disk surface is classified into four regimes, and the equations of motion for each regime considering the Meniscus Force and the contact Force are solved. It is clarified from the simulation and multiple regression results that the surface energy has significant effects on the dynamics of the contact slider.
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Dynamic Characteristics of an In-Contact Head Slider Considering Meniscus Force: Part 3—Wear Durability and Optimization of Surface Energy of Liquid Lubricant Under Perfect Contact Condition
Journal of Tribology, 2002Co-Authors: Hiroshige Matsuoka, Shigehisa Fukui, Takahisa KatoAbstract:The authors developed a computer simulator for in-contact head slider motion where a 3-DOF model of head-suspension assembly was introduced and effects of Meniscus Force between the slider and the disk were considered. The contact Force between a contact pad and a disk surface was taken into account and the dynamic characteristics of an in-contact head slider were discussed from the viewpoints of both bouncing vibration and wear durability by not only 3-DOF head-suspension assembly model over a sinusoidal disk surface undulation but also 1-DOF head-suspension assembly model over a sinusoidal disk surface undulation. In addition to the critical frequency of bouncing, the critical frequency of pressure was introduced. As a result of 3-DOF simulation and 1-DOF analysis, it was found that there exists an optimum surface energy at which the stability of bouncing vibration and wear durability becomes highest under perfect contact condition. Furthermore, the behavior of the optimum point for several design parameters were made clear.
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NanoMeniscus Forces in Undersaturated Vapors: Observable Limit of Macroscopic Characteristics
Langmuir, 2002Co-Authors: Hiroshige Matsuoka, Shigehisa Fukui, Takahisa KatoAbstract:An apparatus which can accurately measure surface Forces between solid surfaces in an atmospherecontrolled chamber has been developed. The surface Forces between crossed-cylindrical mica surfaces were measured in undersaturated vapors of various liquids (hydrocarbons, alcohols, and water) using this apparatus. The surface Forces changed gradually with an increase in the relative vapor pressure of liquid from those under dry conditions to macroscopic Meniscus Forces. To investigate the formation of the Meniscus bridge between solid surfaces, the authors introduce the critical relative vapor pressure, (p/ps)c, at which the surface adhesive Force approaches the macroscopic Meniscus Force. The Kelvin radius at this critical relative vapor pressure was on the nanometer level and was found to be dependent on the structure, molecular weight, and electrostatic nature of the molecules.
Kohei Sakaike - One of the best experts on this subject based on the ideXlab platform.
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Formation of silicon-on-insulator layer with midair cavity for Meniscus Force-mediated layer transfer and high-performance transistor fabrication on glass
Japanese Journal of Applied Physics, 2015Co-Authors: Muneki Akazawa, Kohei Sakaike, Seiichiro HigashiAbstract:We attempted to transfer a phosphorus ion (P+)-implanted oxidized silicon-on-insulator (SOI) layer with a midair cavity to a glass substrate using Meniscus Force at a low temperature. The SiO2 column size was controlled by etching time and the minimum column size was 104 nm. The transfer yield of the implanted sample was significantly improved by decreasing the column size, and the maximum transfer yield was 95% when the implantation dose was 1 × 1015 cm−2. The causes of increasing transfer yield are considered to be the tapered SiO2 column shape and the hydrophilicity of the surface of oxidized samples with implantation. N-channel thin-film transistors (TFTs) fabricated using the films on glass at 300 °C showed a field-effect mobility of 505 cm2 V−1 s−1, a threshold voltage of 2.47 V and a subthreshold swing of 324 mV/dec. on average.
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Meniscus-Force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates
Japanese Journal of Applied Physics, 2015Co-Authors: Kohei Sakaike, Muneki Akazawa, Akitoshi Nakagawa, Seiichiro HigashiAbstract:A novel low-temperature technique for transferring a silicon-on-insulator (SOI) layer with a midair cavity (supported by narrow SiO2 columns) by Meniscus Force has been proposed, and a single-crystalline Si (c-Si) film with a midair cavity formed in dog-bone shape was successfully transferred to a poly(ethylene terephthalate) (PET) substrate at its heatproof temperature or lower. By applying this proposed transfer technique, high-performance c-Si-based complementary metal–oxide–semiconductor (CMOS) transistors were successfully fabricated on the PET substrate. The key processes are the thermal oxidation and subsequent hydrogen annealing of the SOI layer on the midair cavity. These processes ensure a good MOS interface, and the SiO2 layer works as a "blocking" layer that blocks contamination from PET. The fabricated n- and p-channel c-Si thin-film transistors (TFTs) on the PET substrate showed field-effect mobilities of 568 and 103 cm2 V−1 s−1, respectively.
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fabrication of n channel single crystalline silicon 100 thin film transistors on glass substrate by Meniscus Force mediated layer transfer technique
Japanese Journal of Applied Physics, 2014Co-Authors: Muneki Akazawa, Kohei Sakaike, Shogo Nakamura, Seiichiro HigashiAbstract:We propose a novel low-temperature layer transfer of single crystalline silicon (100) to glass substrate using Meniscus Force and midair cavity structure. Local transfer of thermally-oxidized silicon-on-insulator (SOI) layer to glass was successfully carried out at 80 °C. N-channel thin-film transistor (TFT) fabricated on glass at 300 °C showed a field-effect mobility of 1097 cm2 V−1 s−1, a threshold voltage of 1.1 V and a subthreshold swing value of 78 mV/dec. Raman scattering analysis suggests such a high mobility of TFT is originated from tensile strain introduced after gate SiO2 film deposition.
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low temperature layer transfer of midair cavity silicon films to a poly ethylene terephthalate substrate by Meniscus Force
Japanese Journal of Applied Physics, 2014Co-Authors: Kohei Sakaike, Muneki Akazawa, Shogo Nakamura, Seiichiro HigashiAbstract:A single-crystalline-silicon (c-Si) layer (supported by columns on a starting Si-on-insulator wafer) and a counter-poly(ethylene terephthalate) (PET) substrate were placed in close face-to-face contact, and pure water was sandwiched in between the c-Si layer and the PET substrate. The samples formed in this manner were heated on a hot plate at 80 °C. By the Meniscus Force generated during the evaporation of the sandwiched water from the samples, the c-Si films were completely transferred to the PET substrate. A (100)-oriented c-Si thin film that shows good adhesion was successfully formed on PET substrates at low process temperatures.
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Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by Meniscus Force
Applied Physics Letters, 2013Co-Authors: Kohei Sakaike, Muneki Akazawa, Shogo Nakamura, Seiichiro HigashiAbstract:A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a Meniscus Force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a Meniscus Force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 108 and a high field-effect mobility of 609 cm2 V−1 s−1.