The Experts below are selected from a list of 93 Experts worldwide ranked by ideXlab platform
A Aissat - One of the best experts on this subject based on the ideXlab platform.
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effect of in0 70ga0 30as quantum dot insertion in the Middle Cell of inyga1 yp inxga1 xas ge triple junction for solar Cells
Superlattices and Microstructures, 2021Co-Authors: A Aissat, S Nacer, J P VilcotAbstract:Abstract This paper focuses on the simulation and optimization of electrical and structural properties of high efficiency InGaP/InGaAs/Ge triple junction solar Cells that incorporate In0.7Ga0.3As quantum dots with in the GaAs Middle Cell material. Current density-voltage (J-V), external quantum efficiency (EQE) and capacitance-voltage (C-V) characteristics have been simulated and discussed. Results show that 30 pairs of In0.70Ga0.30As (QD)/GaAs (barrier) in the Middle Cell provide a relative enhancement of 13% in EQE in the 900–1000 nm wavelength range. This leads to a short-circuit current of 20 mA/cm2, an open circuit voltage of 2.3 V, a fill factor of 81.73%, and a conversion efficiency of 39.03%. The C-V revealed that a relatively high number of interfacial states are present in the 3-J Cell structure including the QD layers, which decreases the open circuit voltage. In this study we benefited 18% of relative efficiency.
J P Vilcot - One of the best experts on this subject based on the ideXlab platform.
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effect of in0 70ga0 30as quantum dot insertion in the Middle Cell of inyga1 yp inxga1 xas ge triple junction for solar Cells
Superlattices and Microstructures, 2021Co-Authors: A Aissat, S Nacer, J P VilcotAbstract:Abstract This paper focuses on the simulation and optimization of electrical and structural properties of high efficiency InGaP/InGaAs/Ge triple junction solar Cells that incorporate In0.7Ga0.3As quantum dots with in the GaAs Middle Cell material. Current density-voltage (J-V), external quantum efficiency (EQE) and capacitance-voltage (C-V) characteristics have been simulated and discussed. Results show that 30 pairs of In0.70Ga0.30As (QD)/GaAs (barrier) in the Middle Cell provide a relative enhancement of 13% in EQE in the 900–1000 nm wavelength range. This leads to a short-circuit current of 20 mA/cm2, an open circuit voltage of 2.3 V, a fill factor of 81.73%, and a conversion efficiency of 39.03%. The C-V revealed that a relatively high number of interfacial states are present in the 3-J Cell structure including the QD layers, which decreases the open circuit voltage. In this study we benefited 18% of relative efficiency.
Frank Dimroth - One of the best experts on this subject based on the ideXlab platform.
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lattice matched 3 junction Cell with 1 2 ev ingaas gaasp superlattice Middle Cell for improved current matching
Photovoltaic Specialists Conference, 2015Co-Authors: Hassanet Sodabanlu, Frank Dimroth, Takaaki Agui, Tatsuya Takamoto, Hiromasa Fujii, Kentaroh Watanabe, Ryusuke Onitsuka, Hiroyuki Juso, David Lackner, A W BettAbstract:A strain-compensated InGaAs/GaAsP superlattice (SL) was successfully integrated into the GaAs Middle Cell of a lattice-matched InGaP/GaAs/Ge triple junction (3J) solar Cell. Wafer shuttle technology was employed for proof of concept because the growth of the SL was optimized for a different metalorganic vapor phase epitaxy (MOVPE) reactor from the one for conventional 3J Cells, but an entire structure can be grown in a single reactor in the future. The SL extended the absorption edge of the Middle Cell from 875 nm of GaAs to 1150 nm. Consequently, the photo current generated in the SL Middle Cells was enhanced by approximately 30% compared to a normal GaAs Middle Cell, improving current matching among subCells. The performance of SL Cell, especially photo-current, was affected by the structure of the SL Middle Cell and the regrowth condition of the InGaP top Cell. The conversion efficiency reached approximately 37% under 100-sun. The results encourage the implementation of InGaAs/GaAsP SL for high efficiency multijunction solar Cells (MJSCs) with reduced total layer thickness.
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current matched triple junction solar Cell reaching 41 1 conversion efficiency under concentrated sunlight
Applied Physics Letters, 2009Co-Authors: Wolfgang Guter, Marc Steiner, Gerald Siefer, S.p. Philipps, J Schone, A Wekkeli, E Welser, E Oliva, Frank DimrothAbstract:A metamorphic Ga0.35In0.65P/Ga0.83In0.17As/Ge triple-junction solar Cell is shown to provide current-matching of all three subCells and thus composes a device structure with virtually ideal band gap combination. We demonstrate that the key for the realization of this device is the improvement of material quality of the lattice-mismatched layers as well as the development of a highly relaxed Ga1−yInyAs buffer structure between the Ge substrate and the Middle Cell. This allows the metamorphic growth with low dislocation densities below 106 cm−2. The performance of the approach has been demonstrated by a conversion efficiency of 41.1% at 454 suns (454 kW/m2, AM1.5d ASTM G173–03).
Tatsuya Takamoto - One of the best experts on this subject based on the ideXlab platform.
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lattice matched 3 junction Cell with 1 2 ev ingaas gaasp superlattice Middle Cell for improved current matching
Photovoltaic Specialists Conference, 2015Co-Authors: Hassanet Sodabanlu, Frank Dimroth, Takaaki Agui, Tatsuya Takamoto, Hiromasa Fujii, Kentaroh Watanabe, Ryusuke Onitsuka, Hiroyuki Juso, David Lackner, A W BettAbstract:A strain-compensated InGaAs/GaAsP superlattice (SL) was successfully integrated into the GaAs Middle Cell of a lattice-matched InGaP/GaAs/Ge triple junction (3J) solar Cell. Wafer shuttle technology was employed for proof of concept because the growth of the SL was optimized for a different metalorganic vapor phase epitaxy (MOVPE) reactor from the one for conventional 3J Cells, but an entire structure can be grown in a single reactor in the future. The SL extended the absorption edge of the Middle Cell from 875 nm of GaAs to 1150 nm. Consequently, the photo current generated in the SL Middle Cells was enhanced by approximately 30% compared to a normal GaAs Middle Cell, improving current matching among subCells. The performance of SL Cell, especially photo-current, was affected by the structure of the SL Middle Cell and the regrowth condition of the InGaP top Cell. The conversion efficiency reached approximately 37% under 100-sun. The results encourage the implementation of InGaAs/GaAsP SL for high efficiency multijunction solar Cells (MJSCs) with reduced total layer thickness.
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super high efficiency multi junction and concentrator solar Cells
Solar Energy Materials and Solar Cells, 2006Co-Authors: Masafumi Yamaguchi, Tatsuya Takamoto, Kenji ArakiAbstract:Abstract III–V compound multi-junction (MJ) (tandem) solar Cells have the potential for achieving high conversion efficiencies of over 50% and are promising for space and terrestrial applications. We have proposed AlInP–InGaP double hetero (DH) structure top Cell, wide-band gap InGaP DH structure tunnel junction for sub Cell interconnection, and lattice-matched InGaAs Middle Cell. In 2004, we have successfully fabricated world-record efficiency concentrator InGaP/InGaAs/Ge 3-junction solar Cells with an efficiency of 37.4% at 200-suns AM1.5 as a result of widening top Cell band gap, current matching of sub Cells, precise lattice matching of sub Cell materials, proposal of InGaP–Ge heteroface bottom Cell, and introduction of DH-structure tunnel junction. In addition, we have realized high-efficiency concentrator InGaP/InGaAs/Ge 3-junction solar Cell modules (with area of 7000 cm 2 ) with an out-door efficiency of 27% as a result of developing high-efficiency InGaP/InGaAs/Ge 3-junction Cells, low optical loss Fresnel lens and homogenizers, and designing low thermal conductivity modules. Future prospects are also presented. We have proposed concentrator III–V compound MJ solar Cells as the 3rd-generation solar Cells in addition to 1st-generation crystalline Si solar Cells and 2nd-generation thin-film solar Cells. We are now challenging to develop low-cost and high output power concentrator MJ solar Cell modules with an output power of 400 W/m 2 for terrestrial applications and high-efficiency, light-weight and low-cost MJ solar Cells for space applications.
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multi junction iii v solar Cells current status and future potential
Solar Energy, 2005Co-Authors: Masafumi Yamaguchi, Tatsuya Takamoto, Kenji Araki, N J EkinsdaukesAbstract:Abstract Our recent R&D activities of III–V compound multi-junction (MJ) solar Cells are presented. Conversion efficiency of InGaP/InGaAs/Ge has been improved up to 31–32% (AM1.5) as a result of technologies development such as double hetero-wide band-gap tunnel junction, InGaP–Ge hetero-face structure bottom Cell, and precise lattice-matching of InGaAs Middle Cell to Ge substrate by adding indium into the conventional GaAs layer. For concentrator applications, grid structure has been designed in order to reduce the energy loss due to series resistance, and world-record efficiency InGaP/InGaAs/Ge 3-junction concentrator solar Cell with an efficiency of 37.4% (AM1.5G, 200-suns) has been fabricated. In addition, we have also demonstrated high-efficiency and large-area (7000 cm 2 ) concentrator InGaP/InGaAs/Ge 3-junction solar Cell modules of an outdoor efficiency of 27% as a result of developing high-efficiency InGaP/InGaAs/Ge 3-junction Cells, low optical loss Fresnel lens and homogenizers, and designing high thermal conductivity modules. Future prospects are also presented. We have proposed concentrator III–V compound MJ solar Cells as the 3rd generation solar Cells in addition to 1st generation crystalline Si solar Cells and 2nd generation thin-film solar Cells. We are now developing low-cost and high output power concentrator MJ solar Cell modules with an output power of 400 W/m 2 for terrestrial applications.
Rey-stolle Ignacio - One of the best experts on this subject based on the ideXlab platform.
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Thinned GaInP/GaInAs/Ge solar Cells grown with reduced cracking on Ge|Si virtual substrates
'Elsevier BV', 2021Co-Authors: García Ivan, Barrutia Laura, Dadgostar Shabnam, Hinojosa Manuel, Johnson Andrew, Rey-stolle IgnacioAbstract:Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar Cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom Cell and the GaInAs Middle Cell. The theoretical analysis performed using realistic device parameters indicates that the GaInAs Middle Cell can be drastically thinned to 1000 nm while increasing its In content to 8% with an efficiency loss in the 3-junction Cell below 3%. The experimental results show that the formation of macroscopic cracks is prevented in thinned GaInAs/Ge 2-junction and GaInP/GaInAs/Ge 3-junction Cells. These prototype crack-free multijunction Cells demonstrate the concept and were used to rule out any possible component integration issue. The performance metrics are limited by the high threading dislocation density over 2e7cm-2 in the virtual substrates used, but an almost current matched, crack-free, thinned 3-junction solar Cell is demonstrated, and the pathway towards solar Cells with higher voltages identified
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Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar Cells
'Elsevier BV', 2020Co-Authors: Barrutia Laura, García Ivan, Barrigon Enrique, Ochoa Mario, Algora Carlos, Rey-stolle IgnacioAbstract:This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar Cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated. The resulting open circuit voltage of triple-junction solar Cells with these designs is significantly affected (up to 50 mV for the best optimization routine), whereas minimal differences in short circuit current are observed. Electroluminescence measurements show that both the Ge bottom Cell and the Ga(In)As Middle Cell present a VOC gain of 25 mV each. This result indicates that the first stages of the growth not only affect the Ge subCell itself but also to subsequent subCells. This study highlights the impact of the nucleation routine design in the performance of high efficiency multijunction solar Cell based on Ge substrates.Comment: 7 pages,7 figure
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Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar Cells
'Elsevier BV', 2020Co-Authors: Barrutia Laura, García Ivan, Barrigon Enrique, Ochoa Mario, Algora Carlos, Rey-stolle IgnacioAbstract:This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar Cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated. The resulting open circuit voltage of triple-junction solar Cells with these designs is significantly affected (up to 50 mV for the best optimization routine), whereas minimal differences in short circuit current are observed. Electroluminescence measurements show that both the Ge bottom Cell and the Ga(In)As Middle Cell present a VOC gain of 25 mV each. This result indicates that the first stages of the growth not only affect the Ge subCell itself but also to subsequent subCells. This study highlights the impact of the nucleation routine design in the performance of high efficiency multijunction solar Cell based on Ge substrates