The Experts below are selected from a list of 303 Experts worldwide ranked by ideXlab platform

M. Rothschild - One of the best experts on this subject based on the ideXlab platform.

  • A Roadmap for Optical Lithography
    Optics and Photonics News, 2010
    Co-Authors: M. Rothschild
    Abstract:

    The International Technology Roadmap for Semiconductors is the go-to standard for predicting future technology requirements and driving global research and development in the semiconductor industry. This article serves as your roadmap to what it all means for Optical Lithography over the next 10 to 15 years.

  • Nanopatterning with UV Optical Lithography
    MRS Bulletin, 2005
    Co-Authors: M. Rothschild, Theodore M. Bloomstein, N. Efremow, Theodore H. Fedynyshyn, M. Fritze, I. Pottebaum, M. Switkes
    Abstract:

    Optical Lithography at ultraviolet (UV) wavelengths is the standard process for patterning 90-nm state-of-the-art devices in the semiconductor industry, and extensions to 45 nm and below are currently being explored. With such high resolution, the inherent high throughput of Optical Lithography will enable the development of a broad range of applications beyond semiconductor electronics. In this article, we will review progress toward nanopatterning with UV light in a variety of materials and geometries. The common thread is the use of short wavelengths, 193 nm or 157 nm, coupled with immersion to further reduce the effective wavelength. Densely spaced, 32-nm (and even smaller) features have been patterned, facilitating the future preparation of large-area, deeply scaled microelectronics, nanophotonics, nanobiology, and molecular-scale self-assembly.

  • Projection Optical Lithography
    Materials Today, 2005
    Co-Authors: M. Rothschild
    Abstract:

    Projection Optical Lithography has had a remarkable history and, most probably, it will have an equally successful future for at least another decade. To date, it has met all the major challenges posed by the semiconductor industry roadmap. In order to do so, it has undergone important transformations, and has greatly expanded the frontiers of the science and engineering of optics. This paper will review the most recent developments, including transitioning to the short wavelengths of 193 nm and 157 nm, moving toward ultrahigh numerical apertures facilitated by liquid immersion, and incorporation of a range of resolution-enhancing techniques such as Optical proximity correction and phase-shifting masks.

E. Pavel - One of the best experts on this subject based on the ideXlab platform.

  • Nanopatterning of monolayer graphene by quantum Optical Lithography.
    Applied optics, 2021
    Co-Authors: E. Pavel, Virgil Marinescu, M. Lungulescu
    Abstract:

    Quantum Optical Lithography, a diffraction-unlimited method, was applied to pattern monolayer graphene at 10 nm resolution. In our tests with chemical vapor deposition monolayer graphene samples, we have succeeded in producing flat surfaces of a sandwich of monolayer graphene-resist on Si, Si3N4, or glass substrates. Complex patterns have been written on monolayer graphene samples by a nanoablation process. The method could be used to realize monolayer graphene nanodevices.

  • Recent advances in 3- to 10-nm quantum Optical Lithography
    Journal of Micro Nanolithography MEMS and MOEMS, 2019
    Co-Authors: E. Pavel, Virgil Marinescu, Gabriel Prodan, Roxana Trusca
    Abstract:

    Development of semiconductor technologies requires innovative approaches. Optical Lithography, as a key element in this process, needs to be extended into the sub-10 nm range. Manipulation of matter in this range, in order to produce complex patterns, is a challenge for lithographic techniques. A diffraction-unlimited method (quantum Optical Lithography) for nanofabrication is detailed with applications in prototyping functional nanostructures. The writing method was applied to two different materials: resist and fluorescent glass–ceramics. Complex patterns (rectangles, triangles, and letters) with 3-nm linewidth were obtained on Si3N4 transmission electron microscopy grids covered by the resist.

  • Nanofabrication at 1nm resolution by quantum Optical Lithography (Presentation Recording)
    Nanoengineering: Fabrication Properties Optics and Devices XII, 2015
    Co-Authors: E. Pavel
    Abstract:

    A major problem in the Optical Lithography was the diffraction limit. Here, we report and demonstrate a Lithography method, Quantum Optical Lithography [1,2], able to attain 1 nm resolution by Optical means using new materials (fluorescent photosensitive glass-ceramics and QMC-5 resist). The performance is several times better than that described for any Optical or Electron Beam Lithography (EBL) methods. In Fig. 1 we present TEM images of 1 nm lines recorded at 9.6 m/s. a) b) Fig. 1 TEM images of: a) multiple 1 nm lines written in a fluorescent photosensitive glass-ceramics sample; b) single 1 nm line written in QMC-5 resist. References [1] E. Pavel, S. Jinga, B.S. Vasile, A. Dinescu, V. Marinescu, R. Trusca and N. Tosa, “Quantum Optical Lithography from 1 nm resolution to pattern transfer on silicon wafer“, Optics and Laser Technology, 60 (2014) 80-84. [2] E. Pavel, S. Jinga, E. Andronescu, B.S. Vasile, G. Kada, A. Sasahara, N. Tosa, A. Matei, M. Dinescu, A. Dinescu and O.R. Vasile, “2 nm Quantum Optical Lithography“, Optics Communications,291 (2013) 259–263

  • Quantum Optical Lithography from 1 nm resolution to pattern transfer on silicon wafer
    Optics & Laser Technology, 2014
    Co-Authors: E. Pavel, Sorin Ion Jinga, Roxana Trusca, Adrian Dinescu, Bogdan Stefan Vasile, Virgil Marinescu, Naoko Tosa
    Abstract:

    Many attempts have been made to break the diffraction limit, a major problem in Optical Lithography. Here, we report and demonstrate a Lithography method, quantum Optical Lithography, able to attain 1 nm resolution by Optical means using new materials (fluorescent photosensitive glass–ceramics and QMC-5 resist). The performance is several times better than that described for any Optical or electron beam Lithography (EBL) methods. The written patterns on resist were transferred to Si wafer. SEM measurements show 5 nm line widths.

  • 2 nm Quantum Optical Lithography
    Optics Communications, 2013
    Co-Authors: E. Pavel, Sorin Ion Jinga, Bogdan Stefan Vasile, Naoko Tosa, Ecaterina Andronescu, G. Kada, Akira Sasahara, A. Matei, M. Dinescu, Adrian Dinescu
    Abstract:

    Abstract Optical Lithography is a key technique in the development of semiconductor industry. However, diffraction effects limit the minimal resolvable feature size to the Rayleigh diffraction limit of λ /2, where λ is the Optical wavelength. Many technologies have been proposed in the past to replace Optical Lithography. Here, we present a new quantum Optical method to do subwavelength Lithography which is realizable by our current technology now. Using TEM, STEM, SEM and AFM measurements we show that 2 nm width lines could be written in novel materials such as fluorescent photosensitive glass-ceramics by a quantum multiphoton confinement effect. Exposure to the focus laser diode beam ( λ =650 nm) writes high-density lines with 4 nm pitch on the sample surface at room temperature, far beyond the diffraction limit, a fundamental barrier to the exploitation of Optical Lithography. 2 nm Quantum Optical Lithography is an important step to enable full-wafer-level nanofabrication at this resolution.

Chris A Mack - One of the best experts on this subject based on the ideXlab platform.

  • Special Section on Optical Lithography Extension Beyond the 14-nm Node
    Journal of Micro Nanolithography MEMS and MOEMS, 2014
    Co-Authors: Chris A Mack
    Abstract:

    This PDF file contains the editorial “Special Section on Optical Lithography Extension Beyond the 14-nm Node” for JM3 Vol. 13 Issue 01

  • Charting the future "and remembering the past… of Optical Lithography simulation
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005
    Co-Authors: Chris A Mack
    Abstract:

    Optical Lithography modeling began in the early 1970s and represented the first serious attempt to describe Lithography not as an art, but as a science. Thirty years later, Optical Lithography continues to make dramatic advances that enable the profitable continuation of Moore’s Law. Most if not all of these advances would not be possible without the use of Lithography simulators. This article will review the history of Lithography simulation, describing a few of the milestone events and important lithographic advances that simulation enabled. This historical review will end with a characterization of the current state of Lithography modeling and its important applications in chip design, process development, and manufacturing today. Finally, a prediction of future advances in simulation capabilities will be made as well as how these advances will help to move the industry forward.

  • The new, new limits of Optical Lithography
    Emerging Lithographic Technologies VIII, 2004
    Co-Authors: Chris A Mack
    Abstract:

    The end of Optical Lithography has been so often predicted (incorrectly) that such predictions are now a running joke among lithographers. Yet Optical Lithography does have real, physical limitations and even more real economic limits, and an accurate estimation of these limits is essential for planning potential next generation Lithography (NGL) efforts. This paper will review the two types of resolution limits in Optical Lithography: the pitch resolution, governed by the amount of spatial frequency information that can pass through an imaging lens, and the feature size resolution, limited by our ability to control feature size. Projecting the trends in these resolution limits, the capabilities of 193nm immersion Lithography will be explored.

  • Trends in Optical Lithography
    Optics & Photonics News, 1996
    Co-Authors: Chris A Mack
    Abstract:

    The author describes Optical Lithography in the context of the semiconductor industry. Past trends are evaluated and used to predict future possibilities. The economics of the semiconductor industry, and thus Optical Lithography, is discussed and its impact on technology development explained. Wavefront engineering seems to be the most promising approach to extending the life of Optical Lithography in the near future.

  • Understanding focus effects in submicrometer Optical Lithography: a review
    Optical Engineering, 1993
    Co-Authors: Chris A Mack
    Abstract:

    A review is presented on focus effects in Optical Lithography. Alternative definitions of resolution and depth of focus are given based on an understanding of the interactions of the aerial image with the photoresist process. This interaction points to various aspects of the aerial image that are important from a lithographic point of view, especially the aerial image log-slope. The effects of numerical aperture, wavelength, feature size, and feature type can also be characterized using the log-slope defocus curve, thereby permitting objective comparisons of different lithographic tools. The impact of the photoresist on the response of the process to changes in focus is described as two major effects. First, improving the photoresist results in improved exposure latitude. This in turn allows the image to be further degraded by focus errors and still give acceptable results. Second, submicrometer Optical Lithography usually results in asymmetrical focus behavior because of the defocusing of the aerial image as it propagates through the photoresist. Finally, several methods for depth-of-focus improvement are discussed and their relative merits and drawbacks are reviewed.

M. Switkes - One of the best experts on this subject based on the ideXlab platform.

  • Nanopatterning with UV Optical Lithography
    MRS Bulletin, 2005
    Co-Authors: M. Rothschild, Theodore M. Bloomstein, N. Efremow, Theodore H. Fedynyshyn, M. Fritze, I. Pottebaum, M. Switkes
    Abstract:

    Optical Lithography at ultraviolet (UV) wavelengths is the standard process for patterning 90-nm state-of-the-art devices in the semiconductor industry, and extensions to 45 nm and below are currently being explored. With such high resolution, the inherent high throughput of Optical Lithography will enable the development of a broad range of applications beyond semiconductor electronics. In this article, we will review progress toward nanopatterning with UV light in a variety of materials and geometries. The common thread is the use of short wavelengths, 193 nm or 157 nm, coupled with immersion to further reduce the effective wavelength. Densely spaced, 32-nm (and even smaller) features have been patterned, facilitating the future preparation of large-area, deeply scaled microelectronics, nanophotonics, nanobiology, and molecular-scale self-assembly.

Burn Jeng Lin - One of the best experts on this subject based on the ideXlab platform.

  • The ending of Optical Lithography and the prospects of its successors
    Microelectronic Engineering, 2006
    Co-Authors: Burn Jeng Lin
    Abstract:

    This presentation starts from recounting the history of Optical Lithography since its >[email protected] days until the sub-100nm era. To increase resolution and keep depth of focus in check, the wavelength has been shortened from 436, to 365, 248, and 193nm, numerical aperture has increased from 0.15 to 0.93, the universal resolution indicator k"1, reduced from 0.8 to 0.3. There seems to be little room to extend Optical Lithography. Fortunately, water immersion of 193nm light paved the way to 1.35NA. Recent full-chip results from a 0.85NA, 193nm immersion scanner and remaining issues with immersion Lithography are shown. From this point on, Optical Lithography is starting its ending. The techniques to prolong its ending, such as high-index immersion fluid and lens material, polarized illumination, mask solid immersion, double exposures, and pitch splitting are discussed. Potential successors to Optical Lithography include EUV Lithography, high-voltage and low-voltage e-beam direct write systems. Their pros and cons and financial impacts are given.

  • Optical Lithography—present and future challenges
    Comptes Rendus Physique, 2006
    Co-Authors: Burn Jeng Lin
    Abstract:

    Abstract Optical Lithography has been an industrial workhorse for many decades. It has reached a wavelength of 193 nm, a Numerical Aperture (NA) of 0.93 but was facing difficulties to advance further until the debut of immersion Lithography. This review deals with the limit of dry and immersion Lithography systems, their present and future challenges to reach these very limits. A discussion of defects in immersion Lithography, the status of immersion Lithography, polarized illumination, high-index materials, solid-immersion mask, double exposure and double patterning is included. To cite this article: B.J. Lin, C. R. Physique 7 (2006).

  • Quarter- and sub-quarter-micron Optical Lithography
    1991 International Symposium on VLSI Technology Systems and Applications - Proceedings of Technical Papers, 1
    Co-Authors: Burn Jeng Lin
    Abstract:

    Will Optical Lithography finally have reached its ultimate limit at a quarter micrometer minimum feature size? The author shows the obstacles in the projection and the resist systems that prevent Optical Lithography from performing at its theoretical limit as well as means to further extend the theoretical limit. The requirements on the mask, the projection optics, the resist, and the alignment system to support quarter-and sub-quarter-micrometer Optical Lithography are covered. >