The Experts below are selected from a list of 156621 Experts worldwide ranked by ideXlab platform
J T Yue - One of the best experts on this subject based on the ideXlab platform.
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novel esd Protection Structure with embedded scr ldmos for smart power technology
International Reliability Physics Symposium, 2002Co-Authors: Jianhsing Lee, J R Shih, C S Tang, K C Liu, R Y Shiue, T C Ong, Y K Peng, J T YueAbstract:In this paper, a new robust ESD Protection Structure has been proposed for smart power technology. By inserting a P+ diffusion into the drain region of 40 V-LDMOS power transistor, the embedded SCR (ESCR-LDMOS) device can be built and without changing any DC I-V characteristics of a 40 V-LDMOS power transistor. It is also found that the method with P+ strap inserted into drain region (N+ in NW) can improve the ESD failure threshold from 1 kV to 6 kV for HBM and from 100 V to 350 V for MM.
A Peyrelavigne - One of the best experts on this subject based on the ideXlab platform.
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multi ring active analogic Protection for minority carrier injection suppression in smart power technology
International Symposium on Power Semiconductor Devices and IC's, 2001Co-Authors: O Gonnard, G Charitat, Ph Lance, M Suquet, M Bafleur, J P Laine, A PeyrelavigneAbstract:Minority-carrier injection is one of the major causes of redesign in Smart Power technology. This parasitic current generated during the power stage turn off can be the source of dramatic failure such as latch-up. We propose in this paper a new Protection Structure able to significantly reduce the parasitic current flowing through the substrate. This new Protection Structure called MAAP (Multi-ring Active Analogic Protection) is self triggered by the injected current, is fully compatible with the standard technological process and reduces the parasitic current by 3 decades.
Don-gey Liu - One of the best experts on this subject based on the ideXlab platform.
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Silicon-Controlled Rectifier for Electrostatic Discharge Protection Solutions With Minimal Snapback and Reduced Overshoot Voltage
IEEE Electron Device Letters, 2015Co-Authors: Ruei-cheng Sun, Wei Liang, Zhixin Wang, Maxim Klebanov, Don-gey LiuAbstract:An electrostatic discharge (ESD) Protection Structure constructed by the stacking of multiple anode gate–cathode gate directly connected silicon-controlled rectifiers (DCSCRs), fabricated in a 0.18- $\mu \text{m}$ CMOS technology is reported in this letter. Two embedded diodes in the DCSCR dictate the turn-ON mechanism and hence give rise to a trigger voltage equal to twice the diode’s turn-ON voltage. This approach enables the DCSCR to offer a diode-like transmission line pulsing IV characteristic with a minimal snapback and a SCR-like high-ESD robustness. At 25 °C, DCSCR has an acceptable nanoampere-level leakage current. Besides, it is verified that the DCSCR can significantly reduce overshoot voltage when stressed by very-fast-rising pulses. As such, an ESD clamp constructed by stacking a selected number of DCSCRs can offer a flexible trigger/holding voltage and is suitable for low and medium voltage ESD Protection applications.
Paul A Frieze - One of the best experts on this subject based on the ideXlab platform.
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development of simple design oriented procedure for predicting the collision damage of fpso caisson Protection Structures
Ocean Engineering, 2017Co-Authors: Dinh Ngoc Can Le, Janghyun Jeong, Paul A Frieze, Hyunkyoung ShinAbstract:Abstract Protection Structures for FPSO (Floating Production Storage and Offloading) caissons should be sufficiently strong so as not to contact caisson pipes even when the Protection Structure is damaged by an impact by attendant vessels. In the present structural design process, non-linear commercial packages are employed for collision analyses. However, non-linear collision analyses using commercial packages are time-consuming and expensive to operate, especially in the initial design stage. In this study, substantiation of the adopted commercial package was first performed using collision test results on single pipes and H-shape pipes. Then, a rigorous parametric study was conducted by changing the design variables. A simple analytical expression was derived assuming that the kinetic energy of the striking vessel was dissipated by the plastic elongation of pipes and rotation of plastic hinges. Using the parametric study results, design equations to predict the maximum deflection and overall bending damage were obtained by which the effects of local denting and dynamic behaviour could be considered. Additionally, an equation to predict the extent of local denting damage was also derived. The developed procedure was numerically substantiated using the predicted extent of damage to an actual Protection Structure.
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development of simple design oriented procedure for predicting the collision damage of fpso caisson Protection Structures
ASME 2010 29th International Conference on Ocean Offshore and Arctic Engineering, 2010Co-Authors: Janghyun Jeong, Paul A FriezeAbstract:Protection Structures for FPSO caissons are required to be strong enough not to contact caisson pipes even when the Protection Structure is damaged by impact by attendant vessels. In the present structural design process, non-linear commercial packages are employed for the collision analyses. However, non-linear collision analyses using commercial packages are still time-consuming and expensive to operate especially at the initial design stage. In this study, validation of the adopted commercial package was firstly performed using collision test results on unstiffened tubulars. Then, a rigorous parametric study was conducted on simple Protection Structures by changing the collision velocity and the scantling of the Protection Structure. A simple analytical expression was derived assuming that the kinetic energy of the striking vessel is dissipated by plastic elongation of tubulars and rotation of plastic hinges. Using the parametric study results, an equation for the modification factor was obtained by which the effects of local denting and dynamic behavior can be considered. The developed procedure was also substantiated using numerically predicted extent of damages of an actual Protection Structure.Copyright © 2010 by ASME
Moustafa Zerarka - One of the best experts on this subject based on the ideXlab platform.
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combined mos igbt scr Structure for a compact high robustness esd power clamp in smart power soi technology
IEEE Transactions on Device and Materials Reliability, 2014Co-Authors: Houssam Arbess, Marise Bafleur, David Tremouilles, Moustafa ZerarkaAbstract:Smart power technologies are required to withstand high-electrostatic-discharge (ESD) robustness under both powered and unpowered conditions, particularly for automotive and aeronautic applications among many others. They are concurrently confronted to the challenges of high-temperature operation in order to reduce heat-sink-related costs. In this context, very compact high-robustness ESD Protections with low sensitivity to temperature are required. To fulfill this need, we studied a new ESD Protection Structure that combines in the same component MOS, IGBT, and thyristor effects. This is achieved by inserting in the same LDMOS device P+ diffusions in the drain. We studied the impact of N+/P+ ratios on RON and holding current at high temperatures. Structure optimization has been realized with 3-D TCAD simulation and experimentally validated. The proposed Structures provide high ESD robustness with small footprint and reduced temperature sensitivity compared with classical solutions. Original design solutions to improve their immunity to latchup are also presented.
