The Experts below are selected from a list of 1671 Experts worldwide ranked by ideXlab platform
Dadi Setiadi - One of the best experts on this subject based on the ideXlab platform.
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An Integrated 16 × 16 PVDF Pyroelectric Sensor Array
2020Co-Authors: T David Binnie, H.j. Weller, Dadi SetiadiAbstract:This paper presents a fully integrated PVDF- on-silicon Pyroelectric Sensor array. The Pyroelectric Sensor has two main features: a subpixel low noise charge ampli- fier and a self-absorbing layered structure. The integrated low noise charge amplifier is implemented in a standard CMOS process technology. It is located directly under the sensing structure, maximizing the pixel fill factor. The self- absorbing Pyroelectric Sensor is a three-layer stack, consist- ing of a conductive polymer as an absorber layer and front electrode, a thin PVDF film as the Pyroelectric material, and a rear metal layer acting as a reflector layer and rear electrode. The manufacture of the Pyroelectric Sensor array requires five maskless post-CMOS processing steps and is compatible with any n-well, double metal, double polysili- con, CMOS process. The array has an average pixel voltage sensitivity of 2200 V/W at 100 Hz, an NEP of 2 4 10 11 W/ (Hz at 100 Hz, and a specific detectivity of 4 4 10 8 cm Hz/W at 100 Hz. good sensitivity, low noise, thermal stability, and mini- mum electromagnetic and noise interference. The technical approach to the device configuration is relatively simple. The sensing structure consists of a thin film Pyroelectric polymer bonded to a metal oxide semiconductor (MOS) capacitor on a silicon substrate. The variation in charge across the Pyroelectric material, induced by the incident infrared radiation, is transferred to the silicon and detected by charge-sensitive electronic circuitry integrated in the silicon substrate. We have used a prepoled PVDF thin film. Although PVDF has a lower Pyroelectric response than its copolymer P(VDF/TrFE), we found PVDF to be more readily available in small quantities in the thicknesses required than the copolymer. The infrared Sensor array can thus be constructed by postprocessing a convention- ally produced integrated silicon circuit with a nonspecialist material. In an array format with on-chip signal processing
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An integrated 16/spl times/16 PVDF Pyroelectric Sensor array
IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, 2000Co-Authors: T David Binnie, H.j. Weller, Zhiqun He, Dadi SetiadiAbstract:This paper presents a fully integrated PVDF-on-silicon Pyroelectric Sensor array. The Pyroelectric Sensor has two main features: a subpixel low noise charge amplifier and a self-absorbing layered structure. The integrated low noise charge amplifier is implemented in a standard CMOS process technology. It is located directly under the sensing structure, maximizing the pixel fill factor. The self-absorbing Pyroelectric Sensor is a three-layer stack, consisting of a conductive polymer as an absorber layer and front electrode, a thin PVDF film as the Pyroelectric material, and a rear metal layer acting as a reflector layer and rear electrode. The manufacture of the Pyroelectric Sensor array requires five maskless post-CMOS processing steps and is compatible with any n-well, double metal, double polysilicon, CMOS process. The array has an average pixel voltage sensitivity of 2200 V/W at 100 Hz, an NEP of 2.4/spl times/10/sup -11/ W//spl radic/Hz at 100 Hz, and a specific detectivity of 4.4/spl times/10/sup 8/ cm /spl radic/Hz/W at 100 Hz.
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an integrated 16 spl times 16 pvdf Pyroelectric Sensor array
IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, 2000Co-Authors: T David Binnie, Zhiqun He, H Weller, Dadi SetiadiAbstract:This paper presents a fully integrated PVDF-on-silicon Pyroelectric Sensor array. The Pyroelectric Sensor has two main features: a subpixel low noise charge amplifier and a self-absorbing layered structure. The integrated low noise charge amplifier is implemented in a standard CMOS process technology. It is located directly under the sensing structure, maximizing the pixel fill factor. The self-absorbing Pyroelectric Sensor is a three-layer stack, consisting of a conductive polymer as an absorber layer and front electrode, a thin PVDF film as the Pyroelectric material, and a rear metal layer acting as a reflector layer and rear electrode. The manufacture of the Pyroelectric Sensor array requires five maskless post-CMOS processing steps and is compatible with any n-well, double metal, double polysilicon, CMOS process. The array has an average pixel voltage sensitivity of 2200 V/W at 100 Hz, an NEP of 2.4/spl times/10/sup -11/ W//spl radic/Hz at 100 Hz, and a specific detectivity of 4.4/spl times/10/sup 8/ cm /spl radic/Hz/W at 100 Hz.
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Application of a conductive polymer to self-absorbing ferroelectric polymer Pyroelectric Sensors
Infrared Physics & Technology, 1999Co-Authors: Dadi Setiadi, Zhiqun He, J. Hajto, T David BinnieAbstract:Abstract This paper presents application of a conductive polymer to a self-absorbing Pyroelectric Sensor. The Pyroelectric Sensor is a free standing thermal infrared detector. It consists of a conductive polymer (PEDT/PSS) as an absorber layer and front electrode, a PVDF film as the Pyroelectric material and a Ni–Al metal film as a reflector layer and rear electrode. Theoretical analysis of the infra red absorptivity of this structure shows that a selective, self-absorbing Pyroelectric Sensor with an absorptance of up to 90% is feasible. The conductive polymer, PEDT/PSS with added organic binders, is coated on PVDF film using both spin-coating and solution-casting techniques. The deposition technology of the conductive polymer is shown to be a non-critical process with a high reproducibility and compatible with PVDF film. The measured response of this PVDF Pyroelectric Sensor is shown to be 10 times higher than that of a commercially available PVDF film with thin nickel aluminium front and back electrodes.
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An integrated charge amplifier for a Pyroelectric Sensor
Sensors and Actuators A: Physical, 1997Co-Authors: Dadi Setiadi, Alistair Armitage, T David Binnie, Paulus P L Regtien, Pasqualina M. SarroAbstract:This paper presents an integrated charge amplifier that measures a small charge. This charge is generated by a Pyroelectric detector. The charge amplifier consists of a single-stage common source configuration with a passive feedback network. The charge amplifier has a bandwidth of 700 kHz and an output noise voltage of 20 nV Hz-1/2at 1 kHz. A 2 × 2 integrated Pyroelectric Sensor based on VDF/TrFE copolymer has been realized. The voltage response of this Sensor-amplifier is reported.
Paulus P L Regtien - One of the best experts on this subject based on the ideXlab platform.
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An integrated charge amplifier for a Pyroelectric Sensor
Sensors and Actuators A: Physical, 1997Co-Authors: Dadi Setiadi, Alistair Armitage, T David Binnie, Paulus P L Regtien, Pasqualina M. SarroAbstract:This paper presents an integrated charge amplifier that measures a small charge. This charge is generated by a Pyroelectric detector. The charge amplifier consists of a single-stage common source configuration with a passive feedback network. The charge amplifier has a bandwidth of 700 kHz and an output noise voltage of 20 nV Hz-1/2at 1 kHz. A 2 × 2 integrated Pyroelectric Sensor based on VDF/TrFE copolymer has been realized. The voltage response of this Sensor-amplifier is reported.
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a 3 1 integrated Pyroelectric Sensor based on vdf trfe copolymer
Sensors and Actuators A-physical, 1996Co-Authors: Dadi Setiadi, Pasqualina M. Sarro, Paulus P L RegtienAbstract:Abstract This paper presents an integrated Pyroelectric Sensor based on a vinylidene fluoride—trifluoroethylene (VDF/TrFE) copolymer. A silicon substrate that contains field-effect transistor (FET) readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied using a step-wise poling at room temperature. The copolymer deposition and polarization are compatible with semiconductor technology. An array of 3 × 1 integrated Pyroelectric Sensor has been realized. The current and voltage sensitivities and noise of this Sensor have been measured. Voltage noise decreases with increasing frequency, and it is 2 nV (Hz) −1 2 at 100 kHz.
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A 3 × 1 integrated Pyroelectric Sensor based on VDF/TrFE copolymer
Sensors and Actuators A: Physical, 1996Co-Authors: Dadi Setiadi, Pasqualina M. Sarro, Paulus P L RegtienAbstract:This paper presents an integrated Pyroelectric Sensor based on a vinylidene fluoride-trifluoroethylene (VDF/TrFE) copolymer. A silicon substrate that contains field-effect transistor (FET) readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied using a step-wise poling at room temperature. The copolymer deposition and polarization are compatible with semiconductor technology. An array of 3 × 1 integrated Pyroelectric Sensor has been realized. The current and voltage sensitivities and noise of this Sensor have been measured. Voltage noise decreases with increasing frequency, and it is 2 nV (Hz)-1/2at 100 kHz.
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Design of a vdf/trfe copolymer-on-silicon Pyroelectric Sensor
Ferroelectrics, 1995Co-Authors: Dadi Setiadi, Paulus P L RegtienAbstract:Abstract This paper presents the design of a Vinylidene Fluoride TriFluoroEthylene (VDF/TrFE) copolymer-on-silicon Pyroelectric Sensor. For an optimal design of a VDF/TrFE copolymer-on-silicon Pyroelectric Sensor, the one-dimensional diffusion equation is solved for the multilayer stricture. Output voltage and current of the Sensor are calculated. Moreover, the current and voltage sensitivity of the 1 μm VDF/TrFE copolymer-on-silicon Pyroelectric Sensor has been measured. Improvement of the Sensor can be obtained by: (a) etching the silicon substrate under the Sensor element, and (b) an additional VDF/TrFE copolymer layer as thermal insulation. Different noise sources for a Pyroelectric Sensor have been calculated. It was found that dielectric noise dominates the noise. This conclusion has been verified by measured values. Noise equivalent power of 5.10−7 W . Hz−1/2 has been achieved at 100 Hz.
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Realization of an integrated VDF/TrFE copolymer-on-silicon Pyroelectric Sensor
Microelectronic Engineering, 1995Co-Authors: Dadi Setiadi, Paulus P L Regtien, Pasqualina M. SarroAbstract:An integrated Pyroelectric Sensor based on a vinylidene fluoride trifluoroethylene (VDF/TrFE) copolymer is presented. A silicon substrate that contains FET readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied using a step-wise poling at room temperature. The copolymer deposition and polarization are compatible with semiconductor technology. A 3×1 integrated Pyroelectric Sensor has been realized. Voltage sensitivity and noise of this Sensor have been measured
Tadaaki Nagao - One of the best experts on this subject based on the ideXlab platform.
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an on chip quad wavelength Pyroelectric Sensor for spectroscopic infrared sensing
Advanced Science, 2019Co-Authors: Satoshi Ishii, Anh Tung Doan, Yoshiki Wada, Toshihide Nabatame, Tadaaki NagaoAbstract:: Merging photonic structures and optoelectronic Sensors into a single chip may yield a Sensor-on-chip spectroscopic device that can measure the spectrum of matter. In this work, an on-chip concurrent multiwavelength infrared (IR) Sensor, which consists of a set of narrowband wavelength-selective plasmonic perfect absorbers combined with Pyroelectric Sensors, where the response of each Pyroelectric Sensor is boosted only at the resonance of the nanostructured absorber, is proposed and realized. The proposed absorber, which is based on Wood's anomaly absorption from a 2D plasmonic square lattice, shows a narrowband polarization-independent resonance (quality factor - Q of 73) with a nearly perfect absorptivity as high as 0.99 at normal incidence. The fabricated quad-wavelength IR Sensors exhibit four different narrowband spectral responses at normal incidence following the predesigned resonances in the mid-wavelength infrared region that corresponds to the atmospheric window. The device can be applied for practical spectroscopic applications such as nondispersive IR Sensors, IR chemical imaging devices, pyrometers, and spectroscopic thermography imaging.
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An On‐Chip Quad‐Wavelength Pyroelectric Sensor for Spectroscopic Infrared Sensing
Advanced Science, 2019Co-Authors: Satoshi Ishii, Anh Tung Doan, Yoshiki Wada, Toshihide Nabatame, Tadaaki NagaoAbstract:: Merging photonic structures and optoelectronic Sensors into a single chip may yield a Sensor-on-chip spectroscopic device that can measure the spectrum of matter. In this work, an on-chip concurrent multiwavelength infrared (IR) Sensor, which consists of a set of narrowband wavelength-selective plasmonic perfect absorbers combined with Pyroelectric Sensors, where the response of each Pyroelectric Sensor is boosted only at the resonance of the nanostructured absorber, is proposed and realized. The proposed absorber, which is based on Wood's anomaly absorption from a 2D plasmonic square lattice, shows a narrowband polarization-independent resonance (quality factor - Q of 73) with a nearly perfect absorptivity as high as 0.99 at normal incidence. The fabricated quad-wavelength IR Sensors exhibit four different narrowband spectral responses at normal incidence following the predesigned resonances in the mid-wavelength infrared region that corresponds to the atmospheric window. The device can be applied for practical spectroscopic applications such as nondispersive IR Sensors, IR chemical imaging devices, pyrometers, and spectroscopic thermography imaging.
Pasqualina M. Sarro - One of the best experts on this subject based on the ideXlab platform.
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An integrated charge amplifier for a Pyroelectric Sensor
Sensors and Actuators A: Physical, 1997Co-Authors: Dadi Setiadi, Alistair Armitage, T David Binnie, Paulus P L Regtien, Pasqualina M. SarroAbstract:This paper presents an integrated charge amplifier that measures a small charge. This charge is generated by a Pyroelectric detector. The charge amplifier consists of a single-stage common source configuration with a passive feedback network. The charge amplifier has a bandwidth of 700 kHz and an output noise voltage of 20 nV Hz-1/2at 1 kHz. A 2 × 2 integrated Pyroelectric Sensor based on VDF/TrFE copolymer has been realized. The voltage response of this Sensor-amplifier is reported.
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a 3 1 integrated Pyroelectric Sensor based on vdf trfe copolymer
Sensors and Actuators A-physical, 1996Co-Authors: Dadi Setiadi, Pasqualina M. Sarro, Paulus P L RegtienAbstract:Abstract This paper presents an integrated Pyroelectric Sensor based on a vinylidene fluoride—trifluoroethylene (VDF/TrFE) copolymer. A silicon substrate that contains field-effect transistor (FET) readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied using a step-wise poling at room temperature. The copolymer deposition and polarization are compatible with semiconductor technology. An array of 3 × 1 integrated Pyroelectric Sensor has been realized. The current and voltage sensitivities and noise of this Sensor have been measured. Voltage noise decreases with increasing frequency, and it is 2 nV (Hz) −1 2 at 100 kHz.
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A 3 × 1 integrated Pyroelectric Sensor based on VDF/TrFE copolymer
Sensors and Actuators A: Physical, 1996Co-Authors: Dadi Setiadi, Pasqualina M. Sarro, Paulus P L RegtienAbstract:This paper presents an integrated Pyroelectric Sensor based on a vinylidene fluoride-trifluoroethylene (VDF/TrFE) copolymer. A silicon substrate that contains field-effect transistor (FET) readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied using a step-wise poling at room temperature. The copolymer deposition and polarization are compatible with semiconductor technology. An array of 3 × 1 integrated Pyroelectric Sensor has been realized. The current and voltage sensitivities and noise of this Sensor have been measured. Voltage noise decreases with increasing frequency, and it is 2 nV (Hz)-1/2at 100 kHz.
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Realization of an integrated VDF/TrFE copolymer-on-silicon Pyroelectric Sensor
Microelectronic Engineering, 1995Co-Authors: Dadi Setiadi, Paulus P L Regtien, Pasqualina M. SarroAbstract:An integrated Pyroelectric Sensor based on a vinylidene fluoride trifluoroethylene (VDF/TrFE) copolymer is presented. A silicon substrate that contains FET readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied using a step-wise poling at room temperature. The copolymer deposition and polarization are compatible with semiconductor technology. A 3×1 integrated Pyroelectric Sensor has been realized. Voltage sensitivity and noise of this Sensor have been measured
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A 3 X 1 Integrated Pyroelectric Sensor Based On Vdf/trfe Copolymer
Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95, 1995Co-Authors: Dadi Setiadi, Pasqualina M. Sarro, Paulus P L RegtienAbstract:This paper presents an integrated Pyroelectric Sensor based on a Vinylidene Fluoride TriFluoroEthylene (VDF/TrFE) copolymer. A silicon substrate that contains FET readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied using a stepwise poling at room temperature. An array of 3x1 Pyroelectric Sensor has been realized. Current and voltage sensitivities and noise of this Sensor have been measured. A signal-to-noise of 80 dB has been achieved.
Abdelowahed Hajjaji - One of the best experts on this subject based on the ideXlab platform.
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Pyroelectric Sensor based on Pb(Mg1/3Nb2/3)1-xTixO3 single crystals for solid state hydrogen storage reactors
International Journal of Hydrogen Energy, 2019Co-Authors: Amine Alaoui-belghiti, Houda Lifi, S. Laasri, S. Touhtouh, Abdelowahed HajjajiAbstract:Abstract The Pyroelectric effect is commonly used to construct infrared radiation detectors. To pay attention to the possibility of using this phenomenon in materials based on relaxor-ferroelectric such as Pb(Mg1/3Nb2/3)1-xTixO3 (lead titanium-lead magnesium niobate), single crystals from solid solution were grown using modified Bridgman method with x taken three different range (x = 0.25, 0.33 and 0.40). In this work the operation principles for Pyroelectric Sensor and their properties are presented, with a brief review on the temperature stability of the Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN–xPT) single crystals. It was shown that the Pyroelectric and dielectric properties are strongly dependent on composition (PT content), as well as the temperature variation. The investigations have revealed that the best choice for Pyroelectric performances is oriented PMN–0.25 PT, although, the PMN–0.33 PT and PMN–0.40 PT owns much better temperature stability, and higher Curie temperature Tc. The PMN–xPT single crystals showed promising Pyroelectric performances, they can be used as thermal Sensors and may be associated with temperature management systems to improve the performance of solid state hydrogen reactors.
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Pyroelectric Sensor based on pb mg1 3nb2 3 1 xtixo3 single crystals for solid state hydrogen storage reactors
International Journal of Hydrogen Energy, 2019Co-Authors: Amine Alaouibelghiti, Houda Lifi, S. Laasri, S. Touhtouh, Abdelowahed HajjajiAbstract:Abstract The Pyroelectric effect is commonly used to construct infrared radiation detectors. To pay attention to the possibility of using this phenomenon in materials based on relaxor-ferroelectric such as Pb(Mg1/3Nb2/3)1-xTixO3 (lead titanium-lead magnesium niobate), single crystals from solid solution were grown using modified Bridgman method with x taken three different range (x = 0.25, 0.33 and 0.40). In this work the operation principles for Pyroelectric Sensor and their properties are presented, with a brief review on the temperature stability of the Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN–xPT) single crystals. It was shown that the Pyroelectric and dielectric properties are strongly dependent on composition (PT content), as well as the temperature variation. The investigations have revealed that the best choice for Pyroelectric performances is oriented PMN–0.25 PT, although, the PMN–0.33 PT and PMN–0.40 PT owns much better temperature stability, and higher Curie temperature Tc. The PMN–xPT single crystals showed promising Pyroelectric performances, they can be used as thermal Sensors and may be associated with temperature management systems to improve the performance of solid state hydrogen reactors.
