The Experts below are selected from a list of 8187 Experts worldwide ranked by ideXlab platform
John Wang - One of the best experts on this subject based on the ideXlab platform.
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a giant polarization value of zn and mn co modified bismuth ferrite thin films
Applied Physics Letters, 2013Co-Authors: Sha Qiao, John Wang, Dingquan Xiao, Jianguo ZhuAbstract:A giant remanent polarization of BiFeO3 thin films is obtained by introducing Zn and Mn, and Bi(Fe0.93Mn0.05Zn0.02)O3 (BFMZO) thin films were prepared on SrRuO3-buffered silicon substrates by the Radio-Frequency Sputtering. An (111) orientation is induced in such a film because of the introduction of an SrRuO3 buffer layer. An enhanced ferroelectric behavior of 2Pr ∼ 235 μC/cm2 and 2Ec ∼ 612 kV/cm is observed in BFMZO thin films, together with a fatigue-free behavior. As a result, the introduction of Zn and Mn is a good way to improve the electrical behavior of BiFeO3 thin films.
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ferromagnetic ferroelectric and fatigue behavior of 111 oriented bifeo3 bi1 2na1 2 tio3 lead free bilayered thin films
Applied Physics Letters, 2009Co-Authors: Jiagang Wu, Guangqing Kang, John WangAbstract:Lead-free bilayered thin films consisting of BiFeO3 (BFO) and (Bi1/2Na1/2)TiO3 (BNT) nanolayers were deposited on the Pt/TiO2/SiO2/Si substrate by Radio Frequency Sputtering. The bilayered BFO/BNT film exhibits a strong (111) orientation and much enhanced ferroelectric and magnetic properties (2Pr=52.2 μC/cm2, 2Ec=554.0 kV/cm, 2Ms=96.0 emu/cm3, and 2Hc=253.2 Oe) as compared to those of the single layer BNT and BFO thin films, together with an almost fatigue-free polarization behavior. Although space charges occur at the interface between the constituent nanolayers, as confirmed by the Frequency dispersion of capacitance, the bottom BNT nanolayer appears to promote the growth and crystallization of BFO layer, largely responsible for the observed ferroelectric and magnetic behavior.
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ferromagnetic ferroelectric and fatigue behavior of 111 oriented bifeo3 bi1 2na1 2 tio3 lead free bilayered thin films
Applied Physics Letters, 2009Co-Authors: Guangqing Kang, Huajun Liu, John WangAbstract:Lead-free bilayered thin films consisting of BiFeO3 (BFO) and (Bi1/2Na1/2)TiO3 (BNT) nanolayers were deposited on the Pt/TiO2/SiO2/Si substrate by Radio Frequency Sputtering. The bilayered BFO/BNT film exhibits a strong (111) orientation and much enhanced ferroelectric and magnetic properties (2Pr=52.2 μC/cm2, 2Ec=554.0 kV/cm, 2Ms=96.0 emu/cm3, and 2Hc=253.2 Oe) as compared to those of the single layer BNT and BFO thin films, together with an almost fatigue-free polarization behavior. Although space charges occur at the interface between the constituent nanolayers, as confirmed by the Frequency dispersion of capacitance, the bottom BNT nanolayer appears to promote the growth and crystallization of BFO layer, largely responsible for the observed ferroelectric and magnetic behavior.
Seyoung Jeong - One of the best experts on this subject based on the ideXlab platform.
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Wafer-scale high-quality Ag thin film using a ZnO buffer layer for plasmonic applications
'Elsevier BV', 2020Co-Authors: Bo-gwang Jung, Miyeon Cheon, Su Jae Kim, Alexander Gliserin, Soo Hoon Chew, Chae Ryong Cho, Seong-gon Kim, Young Hee Lee, Seungchul Kim, Seyoung JeongAbstract:© 2020 Realizing laterally continuous, ultraflat silver (Ag) single-crystal films is a significant technological challenge. Ag thin film grown on various hetero-substrates has been used in numerous applications, due to its superior electrical and optical properties. To exploit these properties without degradation and apply these films to high-precision patterning, surface plasmonics, and so on, a high-quality thin film having an ultraflat surface and few grain boundaries is needed. A zinc oxide (ZnO) buffer layer can be used to facilitate the growth of a single-crystalline Ag thin film on a sapphire (Al2O3) substrate. ZnO films deposited on Al2O3 substrates have grain boundaries; however, Ag films grown on ZnO are nearly grain-free and close to single-crystalline quality. This can be explained by the exceptionally small extended atomic distance mismatch, of ~0.08%, between Ag and Al2O3, in which the ninth Ag atom and the eighth Al atom are matched in terms of coherence and periodicity. A modified Radio Frequency Sputtering system with a single-crystal Ag target enabled wafer-scale growth of ultraflat, grain-free Ag films. The proposed approach using a ZnO buffer provides a new method for fabricating Ag films with high adhesion, anti-oxidative stability, and superior optical properties, and allows for easy nano-patterning11sciescopu
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Wafer-scale high-quality Ag thin film using a ZnO buffer layer for plasmonic applications
ELSEVIER SCIENCE BV, 2020Co-Authors: Bo-gwang Jung, Miyeon Cheon, Su Jae Kim, Alexander Gliserin, Soo Hoon Chew, Chae Ryong Cho, Seong-gon Kim, Young Hee Lee, Seungchul Kim, Seyoung JeongAbstract:© 2020 Realizing laterally continuous, ultraflat silver (Ag) single-crystal films is a significant technological challenge. Ag thin film grown on various hetero-substrates has been used in numerous applications, due to its superior electrical and optical properties. To exploit these properties without degradation and apply these films to high-precision patterning, surface plasmonics, and so on, a high-quality thin film having an ultraflat surface and few grain boundaries is needed. A zinc oxide (ZnO) buffer layer can be used to facilitate the growth of a single-crystalline Ag thin film on a sapphire (Al2O3) substrate. ZnO films deposited on Al2O3 substrates have grain boundaries; however, Ag films grown on ZnO are nearly grain-free and close to single-crystalline quality. This can be explained by the exceptionally small extended atomic distance mismatch, of ~0.08%, between Ag and Al2O3, in which the ninth Ag atom and the eighth Al atom are matched in terms of coherence and periodicity. A modified Radio Frequency Sputtering system with a single-crystal Ag target enabled wafer-scale growth of ultraflat, grain-free Ag films. The proposed approach using a ZnO buffer provides a new method for fabricating Ag films with high adhesion, anti-oxidative stability, and superior optical properties, and allows for easy nano-patternin
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fabrication of high quality single crystal cu thin films using Radio Frequency Sputtering
Scientific Reports, 2015Co-Authors: Ji Hun Park, Minwook Oh, Cheol Seong Hwang, Seyoung JeongAbstract:Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and Radio-Frequency (RF) Sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10−3 Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.
A Redondocubero - One of the best experts on this subject based on the ideXlab platform.
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flexible zinc nitride thin film transistors using spin on glass as gate insulator
IEEE Transactions on Electron Devices, 2018Co-Authors: Miguel A Dominguez, J L Pau, A RedondocuberoAbstract:In this paper, zinc nitride (Zn3N2)-based flexible thin-film transistors (TFTs) are presented. The zinc nitride thin film is deposited by magnetron Radio Frequency Sputtering at room temperature, while spin-on glass and aluminum were used as gate insulator and source/drain electrode, respectively. Polyethylene terephthalate is used as flexible substrate. The flexible Zn3N2 TFTs were characterized while bent to 5-mm tensile radius. The flexible TFTs exhibit an electron mobility of 3.8 cm $^{2}/\text{V}\cdot \text{s}$ and an ON/OFF current ratio close to 105 after several cycles of bending and being exposed to air ambient for 30 days.
Guangqing Kang - One of the best experts on this subject based on the ideXlab platform.
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ferromagnetic ferroelectric and fatigue behavior of 111 oriented bifeo3 bi1 2na1 2 tio3 lead free bilayered thin films
Applied Physics Letters, 2009Co-Authors: Jiagang Wu, Guangqing Kang, John WangAbstract:Lead-free bilayered thin films consisting of BiFeO3 (BFO) and (Bi1/2Na1/2)TiO3 (BNT) nanolayers were deposited on the Pt/TiO2/SiO2/Si substrate by Radio Frequency Sputtering. The bilayered BFO/BNT film exhibits a strong (111) orientation and much enhanced ferroelectric and magnetic properties (2Pr=52.2 μC/cm2, 2Ec=554.0 kV/cm, 2Ms=96.0 emu/cm3, and 2Hc=253.2 Oe) as compared to those of the single layer BNT and BFO thin films, together with an almost fatigue-free polarization behavior. Although space charges occur at the interface between the constituent nanolayers, as confirmed by the Frequency dispersion of capacitance, the bottom BNT nanolayer appears to promote the growth and crystallization of BFO layer, largely responsible for the observed ferroelectric and magnetic behavior.
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ferromagnetic ferroelectric and fatigue behavior of 111 oriented bifeo3 bi1 2na1 2 tio3 lead free bilayered thin films
Applied Physics Letters, 2009Co-Authors: Guangqing Kang, Huajun Liu, John WangAbstract:Lead-free bilayered thin films consisting of BiFeO3 (BFO) and (Bi1/2Na1/2)TiO3 (BNT) nanolayers were deposited on the Pt/TiO2/SiO2/Si substrate by Radio Frequency Sputtering. The bilayered BFO/BNT film exhibits a strong (111) orientation and much enhanced ferroelectric and magnetic properties (2Pr=52.2 μC/cm2, 2Ec=554.0 kV/cm, 2Ms=96.0 emu/cm3, and 2Hc=253.2 Oe) as compared to those of the single layer BNT and BFO thin films, together with an almost fatigue-free polarization behavior. Although space charges occur at the interface between the constituent nanolayers, as confirmed by the Frequency dispersion of capacitance, the bottom BNT nanolayer appears to promote the growth and crystallization of BFO layer, largely responsible for the observed ferroelectric and magnetic behavior.
Zhilin Zhang - One of the best experts on this subject based on the ideXlab platform.
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atomic layer deposition deposited high dielectric constant κ zralo x gate insulator enabling high performance znsno thin film transistors
Superlattices and Microstructures, 2017Co-Authors: Chuanxin Huang, Xueyin Jiang, Deyao Zhong, Chengyu Zhao, Wenqing Zhu, Jianhua Zhang, Zhilin ZhangAbstract:Abstract The high κ ZrAlOx gate insulators were deposited by atomic layer deposition on silicon and characterized by the different analytical techniques. The grazing incidence X-ray diffraction (GIXRD) verifies that ZrAlOx thin films show an amorphous structure. The X-ray photoelectron spectroscopy (XPS) confirms that the form of ZrAlOx phase improves the electrical properties and stability of the associated devices. Then, all ZrAlOx thin films were integrated in metal-insulator-semiconductor structures to check the electrical capabilities. They all show a low leakage current density (about 1 × 10−8 A/cm2) under a high electric field of about 2.0 MV/cm, and exhibit a stable capacitance as a function of Frequency. Their associated ZTO TFTs were deposited by a Radio Frequency Sputtering, and the influence of the ZrAlOx thickness on the stabilities under positive bias stress and electrical properties is investigated. The 130 nm ZrAlOx based TFT shows the optimized electrical properties (its mobility, threshold voltage, sub-threshold voltage swing and on-off ratio are 12.5 cm2/V, 0.3 V, 0.15 V/dec. and 8 × 107 and the good stability with 2.5 V threshold voltage shift under the positive bias voltage stress. The better properties of 130 nm ZrAlOx based TFTs are attributed to a less interface trap states and surface scattering center.
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the influence of the sio2 deposition condition on the zno thin film transistor performance
Superlattices and Microstructures, 2010Co-Authors: L Zhang, X W Zhang, Huaping Lin, Xueyin Jiang, Zhilin ZhangAbstract:Abstract Thin-film transistors with bottom gate and staggered electrodes using Radio Frequency Sputtering ZnO and SiO2 films as channel layer and gate insulator are fabricated in this work. The performance of ZnO-TFTs with different oxygen partial pressure (15%, 20% and 30%) SiO2 dielectrics are investigated and compared with each other. The experiment results show that the oxygen partial pressure plays an important role in enhancing both the field effect mobility and bias stability of the devices. The best performance device is obtained with 20% oxygen partial pressure SiO2 dielectric, which has the smallest leakage current compared with the other two types of insulators. The field effect mobility, on/off ratio and sub-threshold swing for the 20% oxygen partial pressure SiO2 dielectric based device are 8.1 cm2/V.s, 1.8×108 and 1.35 V/dec, respectively. The 20% oxygen partial pressure insulator based device also shows a much small threshold voltage shift of 2 V after a 20 V gate voltage stressed for 1 h, while these values for the 15% and 30% oxygen partial pressure insulator based devices are 7.3 V and 3 V, respectively.
