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M. S. Ünlü - One of the best experts on this subject based on the ideXlab platform.
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high speed Resonant Cavity enhanced ge photodetectors on reflecting si substrates for 1550 nm operation
IEEE Photonics Technology Letters, 2005Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, M. S. ÜnlüAbstract:We have designed and fabricated high-speed Resonant Cavity enhanced germanium (Ge) Schottky photodetectors on a silicon-on-insulator substrate. These back-illuminated detectors have demonstrated 3-dB bandwidths of more than 12 GHz at 3-V reverse bias and a peak quantum efficiency of 59% (R=0.73 A/W) at the Resonant wavelength of /spl sim/1540 nm. Time domain measurements of our Ge photodetectors with diameters of up to 48 /spl mu/m show transit-time limited impulse responses corresponding to bandwidths of at least 6.7 GHz, making these detectors compatible with 10-Gb/s data communication systems.
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high speed Resonant Cavity enhanced ge photodetectors on reflecting si substrates for 1550 nm operation
Lasers and Electro-Optics Society Meeting, 2004Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, M. S. ÜnlüAbstract:We have fabricated high-speed Resonant Cavity enhanced Ge-on-SOI photodetectors, demonstrating 3 dB bandwidths of more than 12 GHz at 3 V reverse bias and a peak quantum efficiency of 59% at the Resonant wavelength of 1540 nm.
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Resonant Cavity enhanced ge photodetectors for 1550 nm operation on reflecting si substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2004Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, Bruno Ghyselen, Jifeng Liu, M. S. ÜnlüAbstract:We have fabricated and characterized the first Resonant Cavity-enhanced germanium photodetectors on double silicon-on-insulator substrates (Ge-DSOI) for operation around the 1550-nm communication wavelength and have demonstrated over four-fold improvement in quantum efficiency compared to its single-pass counterpart. The DSOI substrate is fabricated using an ion-cut process and optimized for high reflectivity (>90%) in the 1300-1600-nm wavelength range, whereas the Ge layer is grown using a novel two-step ultra-high vacuum/chemical vapor deposition direct epitaxial growth technique. We have simulated a Ge-DSOI photodetector optimized for operation at 1550 nm, exhibiting a quantum efficiency of 76% at 1550 nm given a Ge layer thickness of only 860 nm as a result of both strain-induced and Resonant Cavity enhancement. For this Ge thickness, we estimate a transit time-limited 3-dB bandwidth of approximately 25 GHz.
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silicon substrates with buried distributed bragg reflectors for Resonant Cavity enhanced optoelectronics
IEEE Journal of Selected Topics in Quantum Electronics, 2002Co-Authors: M K Emsley, O I Dosunmu, M. S. ÜnlüAbstract:We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated Resonant Cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at half-maximum of 29 ps suitable for 10 Gbps data communications. We have also implemented double-SOI substrates with 90% reflectivity covering 1300 and 1550 nm for use in Si-based optoelectronics.
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high speed Resonant Cavity enhanced silicon photodetectors on reflecting silicon on insulator substrates
IEEE Photonics Technology Letters, 2002Co-Authors: M K Emsley, O I Dosunmu, M. S. ÜnlüAbstract:We report a Resonant-Cavity-enhanced Si photodetector fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector (DBR) fabricated using a commercially available double-SOI process. The buried DBR provides a 90% reflecting surface. The Resonant-Cavity-enhanced Si photodetectors have 40% quantum efficiency at 860 nm and response time of 29 ps. These devices are suitable for 10-Gb/s data communications.
J C Campbell - One of the best experts on this subject based on the ideXlab platform.
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design consideration and demonstration of Resonant Cavity enhanced quantum dot infrared photodetectors in mid infrared wavelength regime 3 5 mu rm m
IEEE Journal of Quantum Electronics, 2010Co-Authors: T Asano, J C Campbell, Chong Hu, Yi Zhang, A MadhukarAbstract:Lattice-mismatched-strain-driven, defect-free, 3-D islands, dubbed self-assembled quantum dots (SAQDs), currently provide the most advanced platform for quantum-dot-based devices with successful applications to SAQD lasers and considerable potential for infrared detectors. For the latter, one of the limitations is the short optical path length owing to the difficulties in creation of large numbers of quantum dot layers without formation of structural defects arising from accumulated strain. This limitation can be considerably overcome by creation of an appropriate Resonant Cavity to enhance the optical field in the SAQD regions. In this paper, we demonstrate Resonant-Cavity-enhanced quantum dot infrared photodetectors in the mid-infrared (MIR, 3-5 μm ) regime. For effective enhancement, the SAQDs are designed to generate a very narrow peak (Δλ/λ ~ 10%) in the intraband photocurrent response in the MIR range utilizing short period superlattices as the quantum confining layers. Incorporating such SAQD layers at specific enhanced electric field regions within the Resonant Cavity comprising a two-pair GaAs/air-gap back mirror and a GaAs surface front mirror, we have obtained QDIP detectivity enhancement of ~ 8-12 times.
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Resonant Cavity enhanced high speed si photodiode grown by epitaxial lateral overgrowth
IEEE Photonics Technology Letters, 1999Co-Authors: J D Schaub, J C Campbell, Clint L Schow, G W Neudeck, J DentonAbstract:We report a Resonant Cavity Si photodiode grown by merged epitaxial lateral overgrowth. At a reverse bias of 5 V, the dark current was 2.7 pA and the bandwidth exceeded 34 GHz. The peak quantum efficiencies ranged from 42% at 704 nm to 31% at 836 nm. This is the highest speed reported for a Si p-i-n photodiode and the highest bandwidth-efficiency product for any Si-based photodetector.
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quantum dot Resonant Cavity photodiode with operation near 1 3 micro sign m wavelength
Electronics Letters, 1997Co-Authors: J C Campbell, D L Huffaker, H Deng, D G DeppeAbstract:It is shown that strained-layer InGaAs quantum dots grown on GaAs substrates can extend the operating wavelength of GaAs-based optoelectronic devices to wavelengths near 1.3 µm. Specifically, a 1.27 µm Resonant-Cavity photodiode with a quantum dot absorbing region is demonstrated. This photodiode exhibits a peak external quantum efficiency of 49% with a spectral bandwidth of 1.2 nm.
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quantum dot Resonant Cavity photodiode with operation near 1 3 spl mu m wavelength
Electronics Letters, 1997Co-Authors: J C Campbell, D L Huffaker, H Deng, D G DeppeAbstract:It is shown that strained-layer InGaAs quantum dots grown on GaAs substrates can extend the operating wavelength of GaAs-based optoelectronic devices to wavelengths near 1.3 /spl mu/m. Specifically a 1.27 /spl mu/m Resonant-Cavity photodiode with a quantum dot absorbing region is demonstrated. This photodiode exhibits a peak external quantum efficiency of 49% with a spectral bandwidth of 1.2 nm.
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high speed polysilicon Resonant Cavity photodiode with sio sub 2 si bragg reflectors
IEEE Photonics Technology Letters, 1997Co-Authors: J C Bean, H. Nie, Clint L Schow, J D Schaub, J C CampbellAbstract:Previously, it has been shown that the bandwidth of Si photodiodes can be increased by more than an order of magnitude, without sacrificing responsivity, by a Resonant-Cavity structure that utilized GeSi-Si asymmetric Bragg reflectors. In this letter, we report an interdigitated p-i-n polysilicon Resonant-Cavity photodiode, which employs a Si-SiO/sub 2/ Bragg reflector, that is more compatible with standard Si processing technology. For an absorbing region thickness of only 0.5 /spl mu/m, a peak quantum efficiency of 40% was achieved and the dark current was <60 nA at 10 V. For 2 /spl mu/m/spl times/2-/spl mu/m finger width and spacing the bandwidth was 10 GHz.
Lionel C Kimerling - One of the best experts on this subject based on the ideXlab platform.
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Resonant Cavity enhanced mid infrared photodetector on a silicon platform
Optics Express, 2010Co-Authors: Jianfei Wang, Piotr Becla, Anuradha M Agarwal, Lionel C KimerlingAbstract:In this paper, we demonstrate high optical quantum efficiency (90%) Resonant-Cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The Cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the Resonant wavelength of 3.5 microm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 x 10(9) cmHz(1/2)W(-1) has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 degrees C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits.
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Resonant Cavity enhanced photosensitivity in as2s3 chalcogenide glass at 1550 nm telecommunication wavelength
Optics Letters, 2010Co-Authors: Juejun Hu, M Torregiani, Francesco Morichetti, Nathan Carlie, Anu Agarwal, Kathleen Richardson, Lionel C Kimerling, Andrea MelloniAbstract:We report the first (to our knowledge) experimental observation of Resonant Cavity-enhanced photosensitivity in As2S3 chalcogenide glass film at 1550 nm telecommunication wavelength. The measured photosensitivity threshold is <0.1 GW/cm2, and a photoinduced refractive index increase as large as 0.016 is observed. The photosensitive process is athermal; further, we confirm the absence of two-photon absorption in As2S3, suggesting that defect absorption accounts for the energy transfer from photons to glass network. Besides its potential application for reconfigurable photonics circuit, such photosensitivity is also an important design consideration for nonlinear optical devices using chalcogenide glasses.
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high speed Resonant Cavity enhanced ge photodetectors on reflecting si substrates for 1550 nm operation
IEEE Photonics Technology Letters, 2005Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, M. S. ÜnlüAbstract:We have designed and fabricated high-speed Resonant Cavity enhanced germanium (Ge) Schottky photodetectors on a silicon-on-insulator substrate. These back-illuminated detectors have demonstrated 3-dB bandwidths of more than 12 GHz at 3-V reverse bias and a peak quantum efficiency of 59% (R=0.73 A/W) at the Resonant wavelength of /spl sim/1540 nm. Time domain measurements of our Ge photodetectors with diameters of up to 48 /spl mu/m show transit-time limited impulse responses corresponding to bandwidths of at least 6.7 GHz, making these detectors compatible with 10-Gb/s data communication systems.
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high speed Resonant Cavity enhanced ge photodetectors on reflecting si substrates for 1550 nm operation
Lasers and Electro-Optics Society Meeting, 2004Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, M. S. ÜnlüAbstract:We have fabricated high-speed Resonant Cavity enhanced Ge-on-SOI photodetectors, demonstrating 3 dB bandwidths of more than 12 GHz at 3 V reverse bias and a peak quantum efficiency of 59% at the Resonant wavelength of 1540 nm.
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Resonant Cavity enhanced ge photodetectors for 1550 nm operation on reflecting si substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2004Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, Bruno Ghyselen, Jifeng Liu, M. S. ÜnlüAbstract:We have fabricated and characterized the first Resonant Cavity-enhanced germanium photodetectors on double silicon-on-insulator substrates (Ge-DSOI) for operation around the 1550-nm communication wavelength and have demonstrated over four-fold improvement in quantum efficiency compared to its single-pass counterpart. The DSOI substrate is fabricated using an ion-cut process and optimized for high reflectivity (>90%) in the 1300-1600-nm wavelength range, whereas the Ge layer is grown using a novel two-step ultra-high vacuum/chemical vapor deposition direct epitaxial growth technique. We have simulated a Ge-DSOI photodetector optimized for operation at 1550 nm, exhibiting a quantum efficiency of 76% at 1550 nm given a Ge layer thickness of only 860 nm as a result of both strain-induced and Resonant Cavity enhancement. For this Ge thickness, we estimate a transit time-limited 3-dB bandwidth of approximately 25 GHz.
M K Emsley - One of the best experts on this subject based on the ideXlab platform.
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Resonant Cavity enhanced single photon avalanche diodes on reflecting silicon substrates
IEEE Photonics Technology Letters, 2008Co-Authors: M Ghioni, M K Emsley, Giacomo Armellini, Piera Maccagnani, Ivan Rech, Selim M UnluAbstract:In this letter, we report the first Resonant-Cavity-enhanced single-photon avalanche diode (RCE SPAD) fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two-period distributed Bragg reflector fabricated using a commercially available double-SOI process. The RCE SPAD detectors have peak photon detection efficiencies ranging from 42% at 780 nm to 34% at 850 nm and time resolution of 35-ps full-width at half-maximum. Typical dark count rates of 450, 3500, and 100 000 c/s were measured at room temperature with RCE SPADs having, respectively 8-, 20-, and 50-mum diameter.
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high speed Resonant Cavity enhanced ge photodetectors on reflecting si substrates for 1550 nm operation
IEEE Photonics Technology Letters, 2005Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, M. S. ÜnlüAbstract:We have designed and fabricated high-speed Resonant Cavity enhanced germanium (Ge) Schottky photodetectors on a silicon-on-insulator substrate. These back-illuminated detectors have demonstrated 3-dB bandwidths of more than 12 GHz at 3-V reverse bias and a peak quantum efficiency of 59% (R=0.73 A/W) at the Resonant wavelength of /spl sim/1540 nm. Time domain measurements of our Ge photodetectors with diameters of up to 48 /spl mu/m show transit-time limited impulse responses corresponding to bandwidths of at least 6.7 GHz, making these detectors compatible with 10-Gb/s data communication systems.
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high speed Resonant Cavity enhanced ge photodetectors on reflecting si substrates for 1550 nm operation
Lasers and Electro-Optics Society Meeting, 2004Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, M. S. ÜnlüAbstract:We have fabricated high-speed Resonant Cavity enhanced Ge-on-SOI photodetectors, demonstrating 3 dB bandwidths of more than 12 GHz at 3 V reverse bias and a peak quantum efficiency of 59% at the Resonant wavelength of 1540 nm.
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Resonant Cavity enhanced ge photodetectors for 1550 nm operation on reflecting si substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2004Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, Bruno Ghyselen, Jifeng Liu, M. S. ÜnlüAbstract:We have fabricated and characterized the first Resonant Cavity-enhanced germanium photodetectors on double silicon-on-insulator substrates (Ge-DSOI) for operation around the 1550-nm communication wavelength and have demonstrated over four-fold improvement in quantum efficiency compared to its single-pass counterpart. The DSOI substrate is fabricated using an ion-cut process and optimized for high reflectivity (>90%) in the 1300-1600-nm wavelength range, whereas the Ge layer is grown using a novel two-step ultra-high vacuum/chemical vapor deposition direct epitaxial growth technique. We have simulated a Ge-DSOI photodetector optimized for operation at 1550 nm, exhibiting a quantum efficiency of 76% at 1550 nm given a Ge layer thickness of only 860 nm as a result of both strain-induced and Resonant Cavity enhancement. For this Ge thickness, we estimate a transit time-limited 3-dB bandwidth of approximately 25 GHz.
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silicon substrates with buried distributed bragg reflectors for Resonant Cavity enhanced optoelectronics
IEEE Journal of Selected Topics in Quantum Electronics, 2002Co-Authors: M K Emsley, O I Dosunmu, M. S. ÜnlüAbstract:We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated Resonant Cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at half-maximum of 29 ps suitable for 10 Gbps data communications. We have also implemented double-SOI substrates with 90% reflectivity covering 1300 and 1550 nm for use in Si-based optoelectronics.
O I Dosunmu - One of the best experts on this subject based on the ideXlab platform.
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high speed Resonant Cavity enhanced ge photodetectors on reflecting si substrates for 1550 nm operation
IEEE Photonics Technology Letters, 2005Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, M. S. ÜnlüAbstract:We have designed and fabricated high-speed Resonant Cavity enhanced germanium (Ge) Schottky photodetectors on a silicon-on-insulator substrate. These back-illuminated detectors have demonstrated 3-dB bandwidths of more than 12 GHz at 3-V reverse bias and a peak quantum efficiency of 59% (R=0.73 A/W) at the Resonant wavelength of /spl sim/1540 nm. Time domain measurements of our Ge photodetectors with diameters of up to 48 /spl mu/m show transit-time limited impulse responses corresponding to bandwidths of at least 6.7 GHz, making these detectors compatible with 10-Gb/s data communication systems.
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high speed Resonant Cavity enhanced ge photodetectors on reflecting si substrates for 1550 nm operation
Lasers and Electro-Optics Society Meeting, 2004Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, M. S. ÜnlüAbstract:We have fabricated high-speed Resonant Cavity enhanced Ge-on-SOI photodetectors, demonstrating 3 dB bandwidths of more than 12 GHz at 3 V reverse bias and a peak quantum efficiency of 59% at the Resonant wavelength of 1540 nm.
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Resonant Cavity enhanced ge photodetectors for 1550 nm operation on reflecting si substrates
IEEE Journal of Selected Topics in Quantum Electronics, 2004Co-Authors: O I Dosunmu, Lionel C Kimerling, Douglas D Cannon, M K Emsley, Bruno Ghyselen, Jifeng Liu, M. S. ÜnlüAbstract:We have fabricated and characterized the first Resonant Cavity-enhanced germanium photodetectors on double silicon-on-insulator substrates (Ge-DSOI) for operation around the 1550-nm communication wavelength and have demonstrated over four-fold improvement in quantum efficiency compared to its single-pass counterpart. The DSOI substrate is fabricated using an ion-cut process and optimized for high reflectivity (>90%) in the 1300-1600-nm wavelength range, whereas the Ge layer is grown using a novel two-step ultra-high vacuum/chemical vapor deposition direct epitaxial growth technique. We have simulated a Ge-DSOI photodetector optimized for operation at 1550 nm, exhibiting a quantum efficiency of 76% at 1550 nm given a Ge layer thickness of only 860 nm as a result of both strain-induced and Resonant Cavity enhancement. For this Ge thickness, we estimate a transit time-limited 3-dB bandwidth of approximately 25 GHz.
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silicon substrates with buried distributed bragg reflectors for Resonant Cavity enhanced optoelectronics
IEEE Journal of Selected Topics in Quantum Electronics, 2002Co-Authors: M K Emsley, O I Dosunmu, M. S. ÜnlüAbstract:We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated Resonant Cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at half-maximum of 29 ps suitable for 10 Gbps data communications. We have also implemented double-SOI substrates with 90% reflectivity covering 1300 and 1550 nm for use in Si-based optoelectronics.
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high speed Resonant Cavity enhanced silicon photodetectors on reflecting silicon on insulator substrates
IEEE Photonics Technology Letters, 2002Co-Authors: M K Emsley, O I Dosunmu, M. S. ÜnlüAbstract:We report a Resonant-Cavity-enhanced Si photodetector fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector (DBR) fabricated using a commercially available double-SOI process. The buried DBR provides a 90% reflecting surface. The Resonant-Cavity-enhanced Si photodetectors have 40% quantum efficiency at 860 nm and response time of 29 ps. These devices are suitable for 10-Gb/s data communications.
