The Experts below are selected from a list of 8010 Experts worldwide ranked by ideXlab platform
P Mascher - One of the best experts on this subject based on the ideXlab platform.
-
excitation mechanism and thermal emission quenching of tb ions in silicon rich silicon oxide thin films grown by plasma enhanced chemical vapour deposition do we need silicon nanoclusters
Journal of Applied Physics, 2014Co-Authors: A Podhorodecki, G Zatryb, J Misiewicz, J Wojcik, P R J Wilson, L W Golacki, J Wang, W M Jadwisienczak, K Fedus, P MascherAbstract:In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford Backscattering Spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.
-
green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition
Nanotechnology, 2012Co-Authors: A Podhorodecki, G Zatryb, J Misiewicz, J Wojcik, P R J Wilson, P MascherAbstract:The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford Backscattering Spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.
A Podhorodecki - One of the best experts on this subject based on the ideXlab platform.
-
excitation mechanism and thermal emission quenching of tb ions in silicon rich silicon oxide thin films grown by plasma enhanced chemical vapour deposition do we need silicon nanoclusters
Journal of Applied Physics, 2014Co-Authors: A Podhorodecki, G Zatryb, J Misiewicz, J Wojcik, P R J Wilson, L W Golacki, J Wang, W M Jadwisienczak, K Fedus, P MascherAbstract:In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford Backscattering Spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.
-
green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition
Nanotechnology, 2012Co-Authors: A Podhorodecki, G Zatryb, J Misiewicz, J Wojcik, P R J Wilson, P MascherAbstract:The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford Backscattering Spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.
I J R Baumvol - One of the best experts on this subject based on the ideXlab platform.
-
exchange diffusion reactions in hfsion during annealing studied by Rutherford Backscattering Spectrometry nuclear reaction analysis and narrow resonant nuclear reaction profiling
Applied Physics Letters, 2004Co-Authors: L Miotti, G V Soares, I J R Baumvol, Karen Paz Bastos, Carlos Driemeier, R P Pezzi, Jonder Morais, Antonio L P Rotondaro, Mark R Visokay, James J ChambersAbstract:HfSiON films deposited on Si (001) by reactive sputtering were submitted to rapid thermal annealing at 1000°C in vacuum, N2 and O2 atmospheres. The stability of the dielectric was evaluated by measuring the atomic transport and exchange of the chemical species, using Rutherford Backscattering Spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling. Annealing in O2 ambient reduced the N concentration mainly from near-surface regions where oxygen was incorporated in comparable amounts. Vacuum annealing, on the other hand, induced N loss preferentially from the Si/dielectric interface and O loss preferentially from near-surface regions. The results are explained in terms of exchange-diffusion reactions occurring in the HfSiON.
-
enhanced initial growth of atomic layer deposited metal oxides on hydrogen terminated silicon
Applied Physics Letters, 2003Co-Authors: Martin M Frank, Yves J Chabal, M L Green, Annelies Delabie, Bert Brijs, Glen D Wilk, Munyee Ho, Elisa Brod Oliveira Da Rosa, I J R Baumvol, F C StedileAbstract:A route is presented for activation of hydrogen-terminated Si(100) prior to atomic layer deposition. It is based on our discovery from in situ infrared spectroscopy that organometallic precursors can effectively initiate oxide growth. Narrow nuclear resonance profiling and Rutherford Backscattering Spectrometry show that surface functionalization by pre-exposure to 108 Langmuir trimethylaluminum at 300 °C leads to enhanced nucleation and to nearly linear growth kinetics of the high-permittivity gate dielectrics aluminum oxide and hafnium oxide.
-
oxygen reaction diffusion in metalorganic chemical vapor deposition hfo2 films annealed in o2
Applied Physics Letters, 2002Co-Authors: Karen Paz Bastos, G V Soares, I J R Baumvol, L Miotti, R P Pezzi, Jonder Morais, Rama I Hegde, Hsinghuang Tseng, Phil J TobinAbstract:Composition, atomic transport, and chemical reaction were investigated following annealing in O2 of ultrathin HfO2 films deposited on Si substrates thermally nitrided in NO. The as-prepared thin film composition was established by Rutherford Backscattering Spectrometry, nuclear reaction analysis, and x-ray photoelectron spectroscopy as a HfO2 film on an intermediate layer containing silicon oxynitride, hafnium silicate, and possibly hafnium–silicon oxynitride. O penetration, incorporation in the bulk of the HfO2/SiOxNy structure, and oxidation of the substrate forming SiO2 were observed.
G Zatryb - One of the best experts on this subject based on the ideXlab platform.
-
excitation mechanism and thermal emission quenching of tb ions in silicon rich silicon oxide thin films grown by plasma enhanced chemical vapour deposition do we need silicon nanoclusters
Journal of Applied Physics, 2014Co-Authors: A Podhorodecki, G Zatryb, J Misiewicz, J Wojcik, P R J Wilson, L W Golacki, J Wang, W M Jadwisienczak, K Fedus, P MascherAbstract:In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford Backscattering Spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.
-
green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition
Nanotechnology, 2012Co-Authors: A Podhorodecki, G Zatryb, J Misiewicz, J Wojcik, P R J Wilson, P MascherAbstract:The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford Backscattering Spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.
P R J Wilson - One of the best experts on this subject based on the ideXlab platform.
-
excitation mechanism and thermal emission quenching of tb ions in silicon rich silicon oxide thin films grown by plasma enhanced chemical vapour deposition do we need silicon nanoclusters
Journal of Applied Physics, 2014Co-Authors: A Podhorodecki, G Zatryb, J Misiewicz, J Wojcik, P R J Wilson, L W Golacki, J Wang, W M Jadwisienczak, K Fedus, P MascherAbstract:In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford Backscattering Spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.
-
green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition
Nanotechnology, 2012Co-Authors: A Podhorodecki, G Zatryb, J Misiewicz, J Wojcik, P R J Wilson, P MascherAbstract:The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford Backscattering Spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.
