The Experts below are selected from a list of 324 Experts worldwide ranked by ideXlab platform
Hala A. Al-jawhari - One of the best experts on this subject based on the ideXlab platform.
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A review of recent advances in transparent p-type Cu2O-based thin film transistors
Materials Science in Semiconductor Processing, 2015Co-Authors: Hala A. Al-jawhariAbstract:Abstract One of the crucial challenges that face the wide-spread implementation of flexible and transparent electronics is the lack of high performance p-type Semiconductor Material. Cu2O in thin-film form is a potentially attractive Material for such applications because of its native p-type semi-conductivity, transparency, abundant availability, non-toxic nature, and low production cost. This review summarizes recent research on using copper oxide Cu2O thin films to produce p-type transparent thin-film transistors (TFTs) and complementary metal-oxide-Semiconductor (CMOS) devices. After a short introduction about the main advantages of Cu2O Semiconductor Material, different methods for depositing and growing Cu2O thin films are discussed. The hi-tech development, along with the associated obstacles, of the Cu2O-based thin-film transistors is reviewed, with special emphasis on those made of sputtered Cu2O films. Finally, the bilayer scheme as one of the most exciting and promising technique for both TFTs and CMOS devices will be considered.
John M White - One of the best experts on this subject based on the ideXlab platform.
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high mobility amorphous zinc oxynitride Semiconductor Material for thin film transistors
Journal of Applied Physics, 2009Co-Authors: Yan Ye, John M WhiteAbstract:Zinc oxynitride Semiconductor Material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride (Zn3N2) is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, 47 cm2 V−1 s−1 for the as-deposited film produced at 50 °C and 110 cm2 V−1 s−1 after annealing at 400 °C. In addition, it has been observed that the Hall mobility of the Material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide Semiconductor, indium–gallium–zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film tran...
Marc Cahay - One of the best experts on this subject based on the ideXlab platform.
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Current crowding effects in a CdS/LaS cold cathode
Journal of Applied Physics, 1997Co-Authors: P. D. Mumford, Marc CahayAbstract:We analyze the importance of current crowding in a new cold cathode emitter that consists of a thin wide band-gap Semiconductor Material sandwiched between a metallic contact and a low work function semimetallic thin film. Potential Material candidates are suggested to achieve low-voltage (
Yan Ye - One of the best experts on this subject based on the ideXlab platform.
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high mobility amorphous zinc oxynitride Semiconductor Material for thin film transistors
Journal of Applied Physics, 2009Co-Authors: Yan Ye, John M WhiteAbstract:Zinc oxynitride Semiconductor Material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride (Zn3N2) is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, 47 cm2 V−1 s−1 for the as-deposited film produced at 50 °C and 110 cm2 V−1 s−1 after annealing at 400 °C. In addition, it has been observed that the Hall mobility of the Material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide Semiconductor, indium–gallium–zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film tran...
P. D. Mumford - One of the best experts on this subject based on the ideXlab platform.
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Current crowding effects in a CdS/LaS cold cathode
Journal of Applied Physics, 1997Co-Authors: P. D. Mumford, Marc CahayAbstract:We analyze the importance of current crowding in a new cold cathode emitter that consists of a thin wide band-gap Semiconductor Material sandwiched between a metallic contact and a low work function semimetallic thin film. Potential Material candidates are suggested to achieve low-voltage (
