The Experts below are selected from a list of 55338 Experts worldwide ranked by ideXlab platform
D E Yildiz - One of the best experts on this subject based on the ideXlab platform.
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analysis of temperature dependent current conduction mechanisms in au tio2 n 4h sic metal insulator Semiconductor Type schottky barrier diodes
Journal of Applied Physics, 2014Co-Authors: Sahar Alialy, ş Altindal, E E Tanrikulu, D E YildizAbstract:In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator Semiconductor) Type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the temperature range of 200–380 K. Some electrical parameters, such as ideality factor (n), zero-bias barrier height (BH) (ΦBo), series and shunt resistances (Rs, Rsh), were obtained as 5.09, 0.81 eV, 37.43 Ω, and 435 kΩ at 200 K and 2.68, 0.95 eV, 5.99 Ω, and 73 kΩ at 380 K, respectively. The energy density distribution profile of surface states (Nss) was extracted from the forward-bias I-V data by taking into account voltage dependent of the ideality factor (nV), effective BH (Φe), and Rs for 200, 300, and 380 K. The Ln(I) vs V plots are completely parallel in the intermediate bias voltages, which may be well explained by field emission (FE) mechanism for each temperature. On the other hand, the high value of n cannot be explained with this mechanism. Therefore, to explain the change in BH ...
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gaussian distribution of inhomogeneous barrier height in al sio2 p si schottky diodes
Journal of Applied Physics, 2008Co-Authors: D E Yildiz, ş Altindal, H KanburAbstract:The forward and reverse bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (metal-insulator-Semiconductor) Type Schottky diodes (SDs) were measured in the temperature range of 200–400 K. Evaluation of the experimental I-V data reveals a decrease in ΦB0 and Rs but an increase in n, with a decrease in temperature. To explain this behavior of ΦB0 with temperature, we have reported a modification which included n and the tunneling parameter αχ1/2δ in the expression of reverse saturation current I0. Thus, a corrected effective barrier height ΦB eff(I-V) vs T has a negative temperature coefficient (α≈−5×10−4 eV/K), and it is in good agreement with α=−4.73×10−4 eV/K of Si band gap. Such behavior of Rs estimated from Cheung’s method could be expected for Semiconductors in the temperature region, where there is no carrier freezing out, which is non-negligible at low temperatures. Also, there is a linear correlation between ΦB0(I-V) and n due to the inhomogeneities of the barrier heights (BHs). The conventi...
ş Altindal - One of the best experts on this subject based on the ideXlab platform.
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role of graphene doped organic polymer nanocomposites on the electronic properties of schottky junction structures for photocell applications
Journal of Electronic Materials, 2018Co-Authors: Osman Cicek, H Tecimer, ş AltindalAbstract:In this study, the current–voltage characteristics of non-doped and distinct graphene (Gr)-doped polyvinyl alcohol (PVA) interlayers in metal/organic polymer Semiconductor Type Schottky junction structures (SJSs) were investigated on both forward and reverse biases under distinct levels of illumination. The distinct doping concentration ratios (1%, 3% and 7%) of the Gr added to the PVA interlayers were compared by taking into account the basic electrical parameters, such as saturation current (Io), ideality factor (n), barrier height (ΦBo), series (Rs) and shunt resistance (Rsh). The 7% Gr-doped structure displayed the lowest Io values at zero bias. Moreover, the results indicated that the 7% Gr-doped PVA decreased the n value but increased the ΦBo value compared with values associated with structures that have different doping concentrations. In terms of quality and reliability, the Rs and Rsh values of the SJSs were obtained using Ohm’s law and Cheung’s functions, and the 7% Gr-doped structure eventually displayed more uniformly distributed and lower Rs values and the highest Rsh values. Consequently, the 7% Gr-doped structure had better overall quality because of its superior electrical properties compared with structures that have other doping concentrations. Therefore, the 7% Gr-doped structure can be used as a photodiode in electronic devices.
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analysis of temperature dependent current conduction mechanisms in au tio2 n 4h sic metal insulator Semiconductor Type schottky barrier diodes
Journal of Applied Physics, 2014Co-Authors: Sahar Alialy, ş Altindal, E E Tanrikulu, D E YildizAbstract:In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator Semiconductor) Type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the temperature range of 200–380 K. Some electrical parameters, such as ideality factor (n), zero-bias barrier height (BH) (ΦBo), series and shunt resistances (Rs, Rsh), were obtained as 5.09, 0.81 eV, 37.43 Ω, and 435 kΩ at 200 K and 2.68, 0.95 eV, 5.99 Ω, and 73 kΩ at 380 K, respectively. The energy density distribution profile of surface states (Nss) was extracted from the forward-bias I-V data by taking into account voltage dependent of the ideality factor (nV), effective BH (Φe), and Rs for 200, 300, and 380 K. The Ln(I) vs V plots are completely parallel in the intermediate bias voltages, which may be well explained by field emission (FE) mechanism for each temperature. On the other hand, the high value of n cannot be explained with this mechanism. Therefore, to explain the change in BH ...
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gaussian distribution of inhomogeneous barrier height in al sio2 p si schottky diodes
Journal of Applied Physics, 2008Co-Authors: D E Yildiz, ş Altindal, H KanburAbstract:The forward and reverse bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (metal-insulator-Semiconductor) Type Schottky diodes (SDs) were measured in the temperature range of 200–400 K. Evaluation of the experimental I-V data reveals a decrease in ΦB0 and Rs but an increase in n, with a decrease in temperature. To explain this behavior of ΦB0 with temperature, we have reported a modification which included n and the tunneling parameter αχ1/2δ in the expression of reverse saturation current I0. Thus, a corrected effective barrier height ΦB eff(I-V) vs T has a negative temperature coefficient (α≈−5×10−4 eV/K), and it is in good agreement with α=−4.73×10−4 eV/K of Si band gap. Such behavior of Rs estimated from Cheung’s method could be expected for Semiconductors in the temperature region, where there is no carrier freezing out, which is non-negligible at low temperatures. Also, there is a linear correlation between ΦB0(I-V) and n due to the inhomogeneities of the barrier heights (BHs). The conventi...
Sahar Alialy - One of the best experts on this subject based on the ideXlab platform.
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analysis of temperature dependent current conduction mechanisms in au tio2 n 4h sic metal insulator Semiconductor Type schottky barrier diodes
Journal of Applied Physics, 2014Co-Authors: Sahar Alialy, ş Altindal, E E Tanrikulu, D E YildizAbstract:In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator Semiconductor) Type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the temperature range of 200–380 K. Some electrical parameters, such as ideality factor (n), zero-bias barrier height (BH) (ΦBo), series and shunt resistances (Rs, Rsh), were obtained as 5.09, 0.81 eV, 37.43 Ω, and 435 kΩ at 200 K and 2.68, 0.95 eV, 5.99 Ω, and 73 kΩ at 380 K, respectively. The energy density distribution profile of surface states (Nss) was extracted from the forward-bias I-V data by taking into account voltage dependent of the ideality factor (nV), effective BH (Φe), and Rs for 200, 300, and 380 K. The Ln(I) vs V plots are completely parallel in the intermediate bias voltages, which may be well explained by field emission (FE) mechanism for each temperature. On the other hand, the high value of n cannot be explained with this mechanism. Therefore, to explain the change in BH ...
Joerg Appenzeller - One of the best experts on this subject based on the ideXlab platform.
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wse2 field effect transistors with enhanced ambipolar characteristics
Applied Physics Letters, 2013Co-Authors: Joerg AppenzellerAbstract:One of the most relevant features that a semiconducting channel material can offer when used in a field-effect transistor (FET) layout is its capability to enable both electron transport in the conduction band and hole transport in the valence band. In this way, complementary metal-oxide-Semiconductor Type applications become feasible once similar electron and hole drive current densities are achieved, and the threshold voltages are properly adjusted. In this article, we demonstrate pronounced ambipolar device characteristics of multilayer WSe2 FETs using different contact electrodes. Our study reveals that nickel electrodes facilitate electron injection while palladium electrodes are more efficient for hole injection. We also show, as an interesting demonstration, that by using nickel as the source contact electrode and palladium as the drain contact electrode, ambipolar device characteristics with similar on-state performance for both the electron and the hole branch can be achieved in WSe2 FETs. Finally, we discuss a unique technique based on the asymmetry in the ambipolar device characteristics to extract the Schottky barrier heights for such metal to WSe2 contacts.
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An integrated logic circuit assembled on a single carbon nanotube
Science, 2006Co-Authors: Zhihong Chen, Jennifer Sippel-oakley, Paul M Solomon, Shalom J. Wind, Joerg Appenzeller, Jinyao Tang, Andrew G Rinzler, Phaedon AvourisAbstract:Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide Semiconductor-Type architecture was achieved by adjusting the gate work functions of the individual p-Type and n-Type FETs used.
E E Tanrikulu - One of the best experts on this subject based on the ideXlab platform.
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analysis of temperature dependent current conduction mechanisms in au tio2 n 4h sic metal insulator Semiconductor Type schottky barrier diodes
Journal of Applied Physics, 2014Co-Authors: Sahar Alialy, ş Altindal, E E Tanrikulu, D E YildizAbstract:In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator Semiconductor) Type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the temperature range of 200–380 K. Some electrical parameters, such as ideality factor (n), zero-bias barrier height (BH) (ΦBo), series and shunt resistances (Rs, Rsh), were obtained as 5.09, 0.81 eV, 37.43 Ω, and 435 kΩ at 200 K and 2.68, 0.95 eV, 5.99 Ω, and 73 kΩ at 380 K, respectively. The energy density distribution profile of surface states (Nss) was extracted from the forward-bias I-V data by taking into account voltage dependent of the ideality factor (nV), effective BH (Φe), and Rs for 200, 300, and 380 K. The Ln(I) vs V plots are completely parallel in the intermediate bias voltages, which may be well explained by field emission (FE) mechanism for each temperature. On the other hand, the high value of n cannot be explained with this mechanism. Therefore, to explain the change in BH ...
