The Experts below are selected from a list of 297 Experts worldwide ranked by ideXlab platform
Li Wei Zhou - One of the best experts on this subject based on the ideXlab platform.
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effect of voltage divider layer on self current compliance resistive switching in ta taox ito structure with an ultra low power consumption
Applied Physics Letters, 2021Co-Authors: Jinshi Zhao, Shuqin Guo, Li Wei ZhouAbstract:Based on the Ta/TaOx/ITO structure, self-current compliance behavior in the resistive switching (RS) properties was investigated. The formation and rupture of metallic indium (In) conducting filaments (CFs), which contributes to the RS in this device, are confirmed by the variable temperature electrical test combined with X-ray photoelectron spectroscopy (XPS) analysis. It showed high uniformity and endurance performance up to 108 switching cycles, including a lower power consumption. The excellent electrical performance can be attributed to the role of a Series Resistor of ITO because the adverse effects of the voltage (or current) overshooting can be efficiently suppressed, resulting in the controllability of the In CF formation and rupture. The XPS depth profile results confirmed the oxygen exchange at the TaOx/ITO interface, combined with the Ohmic conduction mechanism at low resistance state, indicating that the ITO interface acts as the Series Resistor rather than the Schottky barrier.
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Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption
Applied Physics Letters, 2021Co-Authors: Jinshi Zhao, Shuqin Guo, Li Wei ZhouAbstract:Based on the Ta/TaOx/ITO structure, self-current compliance behavior in the resistive switching (RS) properties was investigated. The formation and rupture of metallic indium (In) conducting filaments (CFs), which contributes to the RS in this device, are confirmed by the variable temperature electrical test combined with X-ray photoelectron spectroscopy (XPS) analysis. It showed high uniformity and endurance performance up to 108 switching cycles, including a lower power consumption. The excellent electrical performance can be attributed to the role of a Series Resistor of ITO because the adverse effects of the voltage (or current) overshooting can be efficiently suppressed, resulting in the controllability of the In CF formation and rupture. The XPS depth profile results confirmed the oxygen exchange at the TaOx/ITO interface, combined with the Ohmic conduction mechanism at low resistance state, indicating that the ITO interface acts as the Series Resistor rather than the Schottky barrier.
Jinshi Zhao - One of the best experts on this subject based on the ideXlab platform.
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effect of voltage divider layer on self current compliance resistive switching in ta taox ito structure with an ultra low power consumption
Applied Physics Letters, 2021Co-Authors: Jinshi Zhao, Shuqin Guo, Li Wei ZhouAbstract:Based on the Ta/TaOx/ITO structure, self-current compliance behavior in the resistive switching (RS) properties was investigated. The formation and rupture of metallic indium (In) conducting filaments (CFs), which contributes to the RS in this device, are confirmed by the variable temperature electrical test combined with X-ray photoelectron spectroscopy (XPS) analysis. It showed high uniformity and endurance performance up to 108 switching cycles, including a lower power consumption. The excellent electrical performance can be attributed to the role of a Series Resistor of ITO because the adverse effects of the voltage (or current) overshooting can be efficiently suppressed, resulting in the controllability of the In CF formation and rupture. The XPS depth profile results confirmed the oxygen exchange at the TaOx/ITO interface, combined with the Ohmic conduction mechanism at low resistance state, indicating that the ITO interface acts as the Series Resistor rather than the Schottky barrier.
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Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption
Applied Physics Letters, 2021Co-Authors: Jinshi Zhao, Shuqin Guo, Li Wei ZhouAbstract:Based on the Ta/TaOx/ITO structure, self-current compliance behavior in the resistive switching (RS) properties was investigated. The formation and rupture of metallic indium (In) conducting filaments (CFs), which contributes to the RS in this device, are confirmed by the variable temperature electrical test combined with X-ray photoelectron spectroscopy (XPS) analysis. It showed high uniformity and endurance performance up to 108 switching cycles, including a lower power consumption. The excellent electrical performance can be attributed to the role of a Series Resistor of ITO because the adverse effects of the voltage (or current) overshooting can be efficiently suppressed, resulting in the controllability of the In CF formation and rupture. The XPS depth profile results confirmed the oxygen exchange at the TaOx/ITO interface, combined with the Ohmic conduction mechanism at low resistance state, indicating that the ITO interface acts as the Series Resistor rather than the Schottky barrier.
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Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory
Nanoscale, 2017Co-Authors: Xing Long Shao, Yi Chuan Wang, Hao Jiang, Cheol Seong Hwang, Jinshi ZhaoAbstract:Ta2O5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta2O5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiOx (x < 2) and played the role of a Series Resistor, whose resistance value was comparable to the on-state resistance of the Ta2O5 RS layer. The Series Resistor TiOx efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiOx layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.
Shuqin Guo - One of the best experts on this subject based on the ideXlab platform.
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effect of voltage divider layer on self current compliance resistive switching in ta taox ito structure with an ultra low power consumption
Applied Physics Letters, 2021Co-Authors: Jinshi Zhao, Shuqin Guo, Li Wei ZhouAbstract:Based on the Ta/TaOx/ITO structure, self-current compliance behavior in the resistive switching (RS) properties was investigated. The formation and rupture of metallic indium (In) conducting filaments (CFs), which contributes to the RS in this device, are confirmed by the variable temperature electrical test combined with X-ray photoelectron spectroscopy (XPS) analysis. It showed high uniformity and endurance performance up to 108 switching cycles, including a lower power consumption. The excellent electrical performance can be attributed to the role of a Series Resistor of ITO because the adverse effects of the voltage (or current) overshooting can be efficiently suppressed, resulting in the controllability of the In CF formation and rupture. The XPS depth profile results confirmed the oxygen exchange at the TaOx/ITO interface, combined with the Ohmic conduction mechanism at low resistance state, indicating that the ITO interface acts as the Series Resistor rather than the Schottky barrier.
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Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption
Applied Physics Letters, 2021Co-Authors: Jinshi Zhao, Shuqin Guo, Li Wei ZhouAbstract:Based on the Ta/TaOx/ITO structure, self-current compliance behavior in the resistive switching (RS) properties was investigated. The formation and rupture of metallic indium (In) conducting filaments (CFs), which contributes to the RS in this device, are confirmed by the variable temperature electrical test combined with X-ray photoelectron spectroscopy (XPS) analysis. It showed high uniformity and endurance performance up to 108 switching cycles, including a lower power consumption. The excellent electrical performance can be attributed to the role of a Series Resistor of ITO because the adverse effects of the voltage (or current) overshooting can be efficiently suppressed, resulting in the controllability of the In CF formation and rupture. The XPS depth profile results confirmed the oxygen exchange at the TaOx/ITO interface, combined with the Ohmic conduction mechanism at low resistance state, indicating that the ITO interface acts as the Series Resistor rather than the Schottky barrier.
James C. Booth - One of the best experts on this subject based on the ideXlab platform.
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Optimal Series Resistors for On-Wafer Calibrations
IEEE Transactions on Microwave Theory and Techniques, 2020Co-Authors: Jasper Drisko, Nathan D. Orloff, James C. Booth, Richard A. Chamberlin, Christian J. LongAbstract:The Series Resistor (SR) is a common on-wafer device typically used in the Series-Resistor (SR) calibration and for estimating the capacitance per unit length of coplanar waveguide (CPW) transmission lines. While much work has been done using SRs, this article addresses the design of the Resistor itself, considering both its dc resistance value and geometry, and evaluates which Resistor is the best Resistor. We fabricated 48 different SRs with dc resistances ranging from approximately 1 $\Omega $ to over 6 $\text{k}\Omega $ and tested their utility in the SR calibration and in extracting the capacitance per unit length of CPW transmission lines. We found that a dc resistance near 100 $\Omega $ produces the best SR calibration when compared to multiline thru-reflect-line. For extracting the capacitance per unit length, Resistors with a dc resistance near 150 $\Omega $ and shorter than 20 $\mu \text{m}$ long gave the capacitance values with the lowest uncertainty. In addition, we provide some guidance on choosing frequency bounds for the capacitance estimation. These results are of interest to anyone who performs on-wafer calibrations.
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New Methods for Series-Resistor Calibrations on Substrates With Losses Up to 110 GHz
IEEE Transactions on Microwave Theory and Techniques, 2016Co-Authors: Song Liu, Nathan D. Orloff, Arkadiusz Lewandowski, James C. Booth, Charles A. E. Little, Ilja Ocket, Dominique Schreurs, Bart NauwelaersAbstract:We present two new methods to perform Series-Resistor calibrations on substrates with losses. Lossless calibration substrates, which are required by the traditional calibration comparison technique, are not needed. The proposed methods rely on multiline thru-reflect-line-calibrated Series-Resistor and Series-capacitor data. The first method uses closed-form equations and the second method is based on multifrequency optimization. The proposed methods are based on a fundamental assumption that the resistance and the inductance of Series-Resistor standards fabricated with thin-film technologies are frequency-independent. In addition, an improved version of the traditional calibration comparison technique is proposed and is used as the benchmark technique. By measurement results on a high-resistivity silicon substrate up to 110 GHz, the validity of the proposed approaches is demonstrated.
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A Compact Variable-Temperature Broadband Series-Resistor Calibration
IEEE Transactions on Microwave Theory and Techniques, 2011Co-Authors: Nathan D. Orloff, Jordi Mateu, Arkadiusz Lewandowski, Eduard Rocas, J King, Carlos Collado, Ichiro Takeuchi, James C. BoothAbstract:We present a broadband on-wafer calibration from 45 MHz to 40 GHz for variable temperature measurements, which requires three standards: a thru, reflect, and Series Resistor. At room temperature, the maximum error of this technique, compared to a benchmark nine-standard multiline thru-reflect-line (TRL) method, is comparable to the repeatability of the benchmark calibration. The Series-Resistor standard is modeled as a lumped-element -network, which is described by four frequency-independent parameters. We show that the model is stable over three weeks, and compare the calibration to the multiline TRL method as a function of time. The approach is then demonstrated at variable temperature, where the model parameters are extracted at 300 K and at variable temperatures down to 20 K, in order to determine their temperature dependence. The resulting technique, valid over the temperature range from 300 to 20 K, reduced the total footprint of the calibration standards by a factor of 17 and the measurement time by a factor of 3.
Nathan D. Orloff - One of the best experts on this subject based on the ideXlab platform.
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Optimal Series Resistors for On-Wafer Calibrations
IEEE Transactions on Microwave Theory and Techniques, 2020Co-Authors: Jasper Drisko, Nathan D. Orloff, James C. Booth, Richard A. Chamberlin, Christian J. LongAbstract:The Series Resistor (SR) is a common on-wafer device typically used in the Series-Resistor (SR) calibration and for estimating the capacitance per unit length of coplanar waveguide (CPW) transmission lines. While much work has been done using SRs, this article addresses the design of the Resistor itself, considering both its dc resistance value and geometry, and evaluates which Resistor is the best Resistor. We fabricated 48 different SRs with dc resistances ranging from approximately 1 $\Omega $ to over 6 $\text{k}\Omega $ and tested their utility in the SR calibration and in extracting the capacitance per unit length of CPW transmission lines. We found that a dc resistance near 100 $\Omega $ produces the best SR calibration when compared to multiline thru-reflect-line. For extracting the capacitance per unit length, Resistors with a dc resistance near 150 $\Omega $ and shorter than 20 $\mu \text{m}$ long gave the capacitance values with the lowest uncertainty. In addition, we provide some guidance on choosing frequency bounds for the capacitance estimation. These results are of interest to anyone who performs on-wafer calibrations.
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New Methods for Series-Resistor Calibrations on Substrates With Losses Up to 110 GHz
IEEE Transactions on Microwave Theory and Techniques, 2016Co-Authors: Song Liu, Nathan D. Orloff, Arkadiusz Lewandowski, James C. Booth, Charles A. E. Little, Ilja Ocket, Dominique Schreurs, Bart NauwelaersAbstract:We present two new methods to perform Series-Resistor calibrations on substrates with losses. Lossless calibration substrates, which are required by the traditional calibration comparison technique, are not needed. The proposed methods rely on multiline thru-reflect-line-calibrated Series-Resistor and Series-capacitor data. The first method uses closed-form equations and the second method is based on multifrequency optimization. The proposed methods are based on a fundamental assumption that the resistance and the inductance of Series-Resistor standards fabricated with thin-film technologies are frequency-independent. In addition, an improved version of the traditional calibration comparison technique is proposed and is used as the benchmark technique. By measurement results on a high-resistivity silicon substrate up to 110 GHz, the validity of the proposed approaches is demonstrated.
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A Compact Variable-Temperature Broadband Series-Resistor Calibration
IEEE Transactions on Microwave Theory and Techniques, 2011Co-Authors: Nathan D. Orloff, Jordi Mateu, Arkadiusz Lewandowski, Eduard Rocas, J King, Carlos Collado, Ichiro Takeuchi, James C. BoothAbstract:We present a broadband on-wafer calibration from 45 MHz to 40 GHz for variable temperature measurements, which requires three standards: a thru, reflect, and Series Resistor. At room temperature, the maximum error of this technique, compared to a benchmark nine-standard multiline thru-reflect-line (TRL) method, is comparable to the repeatability of the benchmark calibration. The Series-Resistor standard is modeled as a lumped-element -network, which is described by four frequency-independent parameters. We show that the model is stable over three weeks, and compare the calibration to the multiline TRL method as a function of time. The approach is then demonstrated at variable temperature, where the model parameters are extracted at 300 K and at variable temperatures down to 20 K, in order to determine their temperature dependence. The resulting technique, valid over the temperature range from 300 to 20 K, reduced the total footprint of the calibration standards by a factor of 17 and the measurement time by a factor of 3.
