The Experts below are selected from a list of 3609 Experts worldwide ranked by ideXlab platform
D Camel - One of the best experts on this subject based on the ideXlab platform.
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laser thermal processing using an optical coating for ultra Shallow Junction formation
Materials Science and Engineering B-advanced Functional Solid-state Materials, 2004Co-Authors: M Hernandez, J Venturini, G Kerrien, C Laviron, D Camel, T Sarnet, J Boulmer, D Berard, D Debarre, J L SantaillerAbstract:Abstract Semiconductor doping is a critical step in microelectronic device fabrication. Particularly, ultra-Shallow Junction formation for the CMOS 45-nm node is today intensively studied. Laser thermal processing (LTP) has already shown potentiality to achieve abrupt and ultra-Shallow Junctions, with a very low resistivity. However, the laser process has to be integrated in the conventional process flow of a real CMOS device fabrication. Therefore, the laser treatment needs to preserve the integrity of the different irradiated structures like transistor gates. Optical coatings, including reflective and anti-reflective coatings, can be used to protect the structures and to control the lateral diffusion of the dopants. In this work, we have studied different optical coatings (different materials and thicknesses) irradiated by a long pulse SOPRA VEL 15 excimer laser (200 ns–15 J). Junctions have been characterized by 4-point probe, in situ reflectivity, UV photometry and secondary ion mass spectroscopy. The efficiency and the integrity of the different coatings have been studied for different laser irradiation conditions in solid and molten phases. The results show that a proper optical coating optimizes the coupling of the deposited laser energy and is promising for improving the integration of the laser activation process of future CMOS Junctions.
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excimer laser thermal processing of ultra Shallow Junction laser pulse duration
Thin Solid Films, 2004Co-Authors: J Venturini, M Hernandez, G Kerrien, C Laviron, D Camel, J L Santailler, T Sarnet, J BoulmerAbstract:Abstract According to the International Technology Roadmap for Semiconductors (ITRS), source and drain extensions thickness for 65 nm and below technology nodes MOSFET lead to a major challenge. Rapid thermal processing (RTP) tools reach the limit of their physical abilities in term of temperature cycle and pulsed laser thermal processing (LTP) tool arise as a major potential candidates to solve the fundamental problem of ultra-Shallow Junction (USJ) activation. LTP experiments have been performed with two different XeCl excimer lasers ( λ =308 nm) with different pulse characteristics (20 and 200 ns). We examine the influence of the pulse duration on LTP of B + (with and without Ge + pre-amorphization) implanted silicon samples on the basis of real-time optical monitoring of the laser induced process, four-point probe resistivity measurements and secondary ion mass spectroscopy (SIMS) depth profiles. Experimental results are compared to model calculations for both laser pulses. The activated dopant dose, Junction depth and sheet resistance, as a function of the laser fluence and shot number for both lasers, confirm the relevance and efficiency of laser processing to realize ultra-Shallow and highly doped Junctions required for the future CMOS generations. Influence of the pulse duration on the USJ formation process is also discussed. In particular, we show the capabilities of the 200 ns pulse to activate B in Si without melting the Si doped layer.
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laser thermal processing for ultra Shallow Junction formation numerical simulation and comparison with experiments
Applied Surface Science, 2003Co-Authors: M Hernandez, J Venturini, G Kerrien, C Laviron, T Sarnet, J Boulmer, D Debarre, D Zahorski, M N Semeria, D CamelAbstract:Abstract In the last few years, laser thermal processing (LTP) has become a potential solution for sub-0.1 μm technology requirements, as focused by the international technology roadmap for semiconductors (ITRS). This paper presents a numerical simulation of the propagation of the melting front and regrowth of Si-based structures during excimer (XeCl-308 nm) laser irradiation. The influence of the pulse duration is highlighted in the simulation and compared with experiments. Two different types of XeCl lasers with different pulse durations have been used for the experiments in order to validate the model (SOPRA VEL 15, 200 ns, 15 J and Compex Lambda Physik, 20 ns, 200 mJ). The comparison between the simulation and the experimental results has been carried out using results from in situ reflectance measurements (transient reflectivity), secondary ion mass spectroscopy, spreading resistance profiles and four-point probes. The different implantation conditions used for this study were B + or BF 2 + implanted Si wafers, with or without Ge + pre-amorphization. Both experimental and simulation results show the potentiality of the LTP annealing technique for realization of ultra Shallow Junction under 0.1 μm.
M Hernandez - One of the best experts on this subject based on the ideXlab platform.
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laser thermal processing using an optical coating for ultra Shallow Junction formation
Materials Science and Engineering B-advanced Functional Solid-state Materials, 2004Co-Authors: M Hernandez, J Venturini, G Kerrien, C Laviron, D Camel, T Sarnet, J Boulmer, D Berard, D Debarre, J L SantaillerAbstract:Abstract Semiconductor doping is a critical step in microelectronic device fabrication. Particularly, ultra-Shallow Junction formation for the CMOS 45-nm node is today intensively studied. Laser thermal processing (LTP) has already shown potentiality to achieve abrupt and ultra-Shallow Junctions, with a very low resistivity. However, the laser process has to be integrated in the conventional process flow of a real CMOS device fabrication. Therefore, the laser treatment needs to preserve the integrity of the different irradiated structures like transistor gates. Optical coatings, including reflective and anti-reflective coatings, can be used to protect the structures and to control the lateral diffusion of the dopants. In this work, we have studied different optical coatings (different materials and thicknesses) irradiated by a long pulse SOPRA VEL 15 excimer laser (200 ns–15 J). Junctions have been characterized by 4-point probe, in situ reflectivity, UV photometry and secondary ion mass spectroscopy. The efficiency and the integrity of the different coatings have been studied for different laser irradiation conditions in solid and molten phases. The results show that a proper optical coating optimizes the coupling of the deposited laser energy and is promising for improving the integration of the laser activation process of future CMOS Junctions.
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excimer laser thermal processing of ultra Shallow Junction laser pulse duration
Thin Solid Films, 2004Co-Authors: J Venturini, M Hernandez, G Kerrien, C Laviron, D Camel, J L Santailler, T Sarnet, J BoulmerAbstract:Abstract According to the International Technology Roadmap for Semiconductors (ITRS), source and drain extensions thickness for 65 nm and below technology nodes MOSFET lead to a major challenge. Rapid thermal processing (RTP) tools reach the limit of their physical abilities in term of temperature cycle and pulsed laser thermal processing (LTP) tool arise as a major potential candidates to solve the fundamental problem of ultra-Shallow Junction (USJ) activation. LTP experiments have been performed with two different XeCl excimer lasers ( λ =308 nm) with different pulse characteristics (20 and 200 ns). We examine the influence of the pulse duration on LTP of B + (with and without Ge + pre-amorphization) implanted silicon samples on the basis of real-time optical monitoring of the laser induced process, four-point probe resistivity measurements and secondary ion mass spectroscopy (SIMS) depth profiles. Experimental results are compared to model calculations for both laser pulses. The activated dopant dose, Junction depth and sheet resistance, as a function of the laser fluence and shot number for both lasers, confirm the relevance and efficiency of laser processing to realize ultra-Shallow and highly doped Junctions required for the future CMOS generations. Influence of the pulse duration on the USJ formation process is also discussed. In particular, we show the capabilities of the 200 ns pulse to activate B in Si without melting the Si doped layer.
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gas immersion laser doping gild for ultra Shallow Junction formation
Thin Solid Films, 2004Co-Authors: G Kerrien, M Hernandez, C Laviron, T Sarnet, J Boulmer, D Debarre, M N SemeriaAbstract:Abstract Gas immersion laser doping (GILD) is a very attractive technique to realize the ultra-Shallow and highly doped Junctions required by the International Technology Roadmap for Semiconductors (ITRS) for future CMOS technologies. In the present work, gaseous dopant precursors (BCl 3 ) are chemisorbed on the Si surface, and partially incorporated during the melting/recrystallisation of the Si top layer induced by an UV laser pulse ( λ =308 nm, pulse duration ≈25 ns). The resulting thickness and dopant concentration of the doped layer depend on the laser energy density and the number of chemisorption/laser-induced incorporation cycles (up to 200). GILD processed Junctions are box-like and exhibit depths ranging from 14 nm to 65 nm, with sheet resistances ranging from ≈110 to 20 Ω/□ (respectively), dopant concentrations well above the B solubility limit in Si (up to 3×10 21 at/cm 3 ) at local thermodynamic equilibrium (LTE) and abruptness of 5–2 nm/decade. Moreover, in situ optical characterization shows the GILD technique capabilities to realize the sub-10 nm thick Shallow Junctions needed for the sub-40 nm node ITRS predictions.
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laser thermal processing for ultra Shallow Junction formation numerical simulation and comparison with experiments
Applied Surface Science, 2003Co-Authors: M Hernandez, J Venturini, G Kerrien, C Laviron, T Sarnet, J Boulmer, D Debarre, D Zahorski, M N Semeria, D CamelAbstract:Abstract In the last few years, laser thermal processing (LTP) has become a potential solution for sub-0.1 μm technology requirements, as focused by the international technology roadmap for semiconductors (ITRS). This paper presents a numerical simulation of the propagation of the melting front and regrowth of Si-based structures during excimer (XeCl-308 nm) laser irradiation. The influence of the pulse duration is highlighted in the simulation and compared with experiments. Two different types of XeCl lasers with different pulse durations have been used for the experiments in order to validate the model (SOPRA VEL 15, 200 ns, 15 J and Compex Lambda Physik, 20 ns, 200 mJ). The comparison between the simulation and the experimental results has been carried out using results from in situ reflectance measurements (transient reflectivity), secondary ion mass spectroscopy, spreading resistance profiles and four-point probes. The different implantation conditions used for this study were B + or BF 2 + implanted Si wafers, with or without Ge + pre-amorphization. Both experimental and simulation results show the potentiality of the LTP annealing technique for realization of ultra Shallow Junction under 0.1 μm.
J Boulmer - One of the best experts on this subject based on the ideXlab platform.
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laser thermal processing using an optical coating for ultra Shallow Junction formation
Materials Science and Engineering B-advanced Functional Solid-state Materials, 2004Co-Authors: M Hernandez, J Venturini, G Kerrien, C Laviron, D Camel, T Sarnet, J Boulmer, D Berard, D Debarre, J L SantaillerAbstract:Abstract Semiconductor doping is a critical step in microelectronic device fabrication. Particularly, ultra-Shallow Junction formation for the CMOS 45-nm node is today intensively studied. Laser thermal processing (LTP) has already shown potentiality to achieve abrupt and ultra-Shallow Junctions, with a very low resistivity. However, the laser process has to be integrated in the conventional process flow of a real CMOS device fabrication. Therefore, the laser treatment needs to preserve the integrity of the different irradiated structures like transistor gates. Optical coatings, including reflective and anti-reflective coatings, can be used to protect the structures and to control the lateral diffusion of the dopants. In this work, we have studied different optical coatings (different materials and thicknesses) irradiated by a long pulse SOPRA VEL 15 excimer laser (200 ns–15 J). Junctions have been characterized by 4-point probe, in situ reflectivity, UV photometry and secondary ion mass spectroscopy. The efficiency and the integrity of the different coatings have been studied for different laser irradiation conditions in solid and molten phases. The results show that a proper optical coating optimizes the coupling of the deposited laser energy and is promising for improving the integration of the laser activation process of future CMOS Junctions.
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excimer laser thermal processing of ultra Shallow Junction laser pulse duration
Thin Solid Films, 2004Co-Authors: J Venturini, M Hernandez, G Kerrien, C Laviron, D Camel, J L Santailler, T Sarnet, J BoulmerAbstract:Abstract According to the International Technology Roadmap for Semiconductors (ITRS), source and drain extensions thickness for 65 nm and below technology nodes MOSFET lead to a major challenge. Rapid thermal processing (RTP) tools reach the limit of their physical abilities in term of temperature cycle and pulsed laser thermal processing (LTP) tool arise as a major potential candidates to solve the fundamental problem of ultra-Shallow Junction (USJ) activation. LTP experiments have been performed with two different XeCl excimer lasers ( λ =308 nm) with different pulse characteristics (20 and 200 ns). We examine the influence of the pulse duration on LTP of B + (with and without Ge + pre-amorphization) implanted silicon samples on the basis of real-time optical monitoring of the laser induced process, four-point probe resistivity measurements and secondary ion mass spectroscopy (SIMS) depth profiles. Experimental results are compared to model calculations for both laser pulses. The activated dopant dose, Junction depth and sheet resistance, as a function of the laser fluence and shot number for both lasers, confirm the relevance and efficiency of laser processing to realize ultra-Shallow and highly doped Junctions required for the future CMOS generations. Influence of the pulse duration on the USJ formation process is also discussed. In particular, we show the capabilities of the 200 ns pulse to activate B in Si without melting the Si doped layer.
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gas immersion laser doping gild for ultra Shallow Junction formation
Thin Solid Films, 2004Co-Authors: G Kerrien, M Hernandez, C Laviron, T Sarnet, J Boulmer, D Debarre, M N SemeriaAbstract:Abstract Gas immersion laser doping (GILD) is a very attractive technique to realize the ultra-Shallow and highly doped Junctions required by the International Technology Roadmap for Semiconductors (ITRS) for future CMOS technologies. In the present work, gaseous dopant precursors (BCl 3 ) are chemisorbed on the Si surface, and partially incorporated during the melting/recrystallisation of the Si top layer induced by an UV laser pulse ( λ =308 nm, pulse duration ≈25 ns). The resulting thickness and dopant concentration of the doped layer depend on the laser energy density and the number of chemisorption/laser-induced incorporation cycles (up to 200). GILD processed Junctions are box-like and exhibit depths ranging from 14 nm to 65 nm, with sheet resistances ranging from ≈110 to 20 Ω/□ (respectively), dopant concentrations well above the B solubility limit in Si (up to 3×10 21 at/cm 3 ) at local thermodynamic equilibrium (LTE) and abruptness of 5–2 nm/decade. Moreover, in situ optical characterization shows the GILD technique capabilities to realize the sub-10 nm thick Shallow Junctions needed for the sub-40 nm node ITRS predictions.
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laser thermal processing for ultra Shallow Junction formation numerical simulation and comparison with experiments
Applied Surface Science, 2003Co-Authors: M Hernandez, J Venturini, G Kerrien, C Laviron, T Sarnet, J Boulmer, D Debarre, D Zahorski, M N Semeria, D CamelAbstract:Abstract In the last few years, laser thermal processing (LTP) has become a potential solution for sub-0.1 μm technology requirements, as focused by the international technology roadmap for semiconductors (ITRS). This paper presents a numerical simulation of the propagation of the melting front and regrowth of Si-based structures during excimer (XeCl-308 nm) laser irradiation. The influence of the pulse duration is highlighted in the simulation and compared with experiments. Two different types of XeCl lasers with different pulse durations have been used for the experiments in order to validate the model (SOPRA VEL 15, 200 ns, 15 J and Compex Lambda Physik, 20 ns, 200 mJ). The comparison between the simulation and the experimental results has been carried out using results from in situ reflectance measurements (transient reflectivity), secondary ion mass spectroscopy, spreading resistance profiles and four-point probes. The different implantation conditions used for this study were B + or BF 2 + implanted Si wafers, with or without Ge + pre-amorphization. Both experimental and simulation results show the potentiality of the LTP annealing technique for realization of ultra Shallow Junction under 0.1 μm.
J Venturini - One of the best experts on this subject based on the ideXlab platform.
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laser thermal processing using an optical coating for ultra Shallow Junction formation
Materials Science and Engineering B-advanced Functional Solid-state Materials, 2004Co-Authors: M Hernandez, J Venturini, G Kerrien, C Laviron, D Camel, T Sarnet, J Boulmer, D Berard, D Debarre, J L SantaillerAbstract:Abstract Semiconductor doping is a critical step in microelectronic device fabrication. Particularly, ultra-Shallow Junction formation for the CMOS 45-nm node is today intensively studied. Laser thermal processing (LTP) has already shown potentiality to achieve abrupt and ultra-Shallow Junctions, with a very low resistivity. However, the laser process has to be integrated in the conventional process flow of a real CMOS device fabrication. Therefore, the laser treatment needs to preserve the integrity of the different irradiated structures like transistor gates. Optical coatings, including reflective and anti-reflective coatings, can be used to protect the structures and to control the lateral diffusion of the dopants. In this work, we have studied different optical coatings (different materials and thicknesses) irradiated by a long pulse SOPRA VEL 15 excimer laser (200 ns–15 J). Junctions have been characterized by 4-point probe, in situ reflectivity, UV photometry and secondary ion mass spectroscopy. The efficiency and the integrity of the different coatings have been studied for different laser irradiation conditions in solid and molten phases. The results show that a proper optical coating optimizes the coupling of the deposited laser energy and is promising for improving the integration of the laser activation process of future CMOS Junctions.
-
excimer laser thermal processing of ultra Shallow Junction laser pulse duration
Thin Solid Films, 2004Co-Authors: J Venturini, M Hernandez, G Kerrien, C Laviron, D Camel, J L Santailler, T Sarnet, J BoulmerAbstract:Abstract According to the International Technology Roadmap for Semiconductors (ITRS), source and drain extensions thickness for 65 nm and below technology nodes MOSFET lead to a major challenge. Rapid thermal processing (RTP) tools reach the limit of their physical abilities in term of temperature cycle and pulsed laser thermal processing (LTP) tool arise as a major potential candidates to solve the fundamental problem of ultra-Shallow Junction (USJ) activation. LTP experiments have been performed with two different XeCl excimer lasers ( λ =308 nm) with different pulse characteristics (20 and 200 ns). We examine the influence of the pulse duration on LTP of B + (with and without Ge + pre-amorphization) implanted silicon samples on the basis of real-time optical monitoring of the laser induced process, four-point probe resistivity measurements and secondary ion mass spectroscopy (SIMS) depth profiles. Experimental results are compared to model calculations for both laser pulses. The activated dopant dose, Junction depth and sheet resistance, as a function of the laser fluence and shot number for both lasers, confirm the relevance and efficiency of laser processing to realize ultra-Shallow and highly doped Junctions required for the future CMOS generations. Influence of the pulse duration on the USJ formation process is also discussed. In particular, we show the capabilities of the 200 ns pulse to activate B in Si without melting the Si doped layer.
-
laser thermal processing for ultra Shallow Junction formation numerical simulation and comparison with experiments
Applied Surface Science, 2003Co-Authors: M Hernandez, J Venturini, G Kerrien, C Laviron, T Sarnet, J Boulmer, D Debarre, D Zahorski, M N Semeria, D CamelAbstract:Abstract In the last few years, laser thermal processing (LTP) has become a potential solution for sub-0.1 μm technology requirements, as focused by the international technology roadmap for semiconductors (ITRS). This paper presents a numerical simulation of the propagation of the melting front and regrowth of Si-based structures during excimer (XeCl-308 nm) laser irradiation. The influence of the pulse duration is highlighted in the simulation and compared with experiments. Two different types of XeCl lasers with different pulse durations have been used for the experiments in order to validate the model (SOPRA VEL 15, 200 ns, 15 J and Compex Lambda Physik, 20 ns, 200 mJ). The comparison between the simulation and the experimental results has been carried out using results from in situ reflectance measurements (transient reflectivity), secondary ion mass spectroscopy, spreading resistance profiles and four-point probes. The different implantation conditions used for this study were B + or BF 2 + implanted Si wafers, with or without Ge + pre-amorphization. Both experimental and simulation results show the potentiality of the LTP annealing technique for realization of ultra Shallow Junction under 0.1 μm.
T Sarnet - One of the best experts on this subject based on the ideXlab platform.
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laser thermal processing using an optical coating for ultra Shallow Junction formation
Materials Science and Engineering B-advanced Functional Solid-state Materials, 2004Co-Authors: M Hernandez, J Venturini, G Kerrien, C Laviron, D Camel, T Sarnet, J Boulmer, D Berard, D Debarre, J L SantaillerAbstract:Abstract Semiconductor doping is a critical step in microelectronic device fabrication. Particularly, ultra-Shallow Junction formation for the CMOS 45-nm node is today intensively studied. Laser thermal processing (LTP) has already shown potentiality to achieve abrupt and ultra-Shallow Junctions, with a very low resistivity. However, the laser process has to be integrated in the conventional process flow of a real CMOS device fabrication. Therefore, the laser treatment needs to preserve the integrity of the different irradiated structures like transistor gates. Optical coatings, including reflective and anti-reflective coatings, can be used to protect the structures and to control the lateral diffusion of the dopants. In this work, we have studied different optical coatings (different materials and thicknesses) irradiated by a long pulse SOPRA VEL 15 excimer laser (200 ns–15 J). Junctions have been characterized by 4-point probe, in situ reflectivity, UV photometry and secondary ion mass spectroscopy. The efficiency and the integrity of the different coatings have been studied for different laser irradiation conditions in solid and molten phases. The results show that a proper optical coating optimizes the coupling of the deposited laser energy and is promising for improving the integration of the laser activation process of future CMOS Junctions.
-
excimer laser thermal processing of ultra Shallow Junction laser pulse duration
Thin Solid Films, 2004Co-Authors: J Venturini, M Hernandez, G Kerrien, C Laviron, D Camel, J L Santailler, T Sarnet, J BoulmerAbstract:Abstract According to the International Technology Roadmap for Semiconductors (ITRS), source and drain extensions thickness for 65 nm and below technology nodes MOSFET lead to a major challenge. Rapid thermal processing (RTP) tools reach the limit of their physical abilities in term of temperature cycle and pulsed laser thermal processing (LTP) tool arise as a major potential candidates to solve the fundamental problem of ultra-Shallow Junction (USJ) activation. LTP experiments have been performed with two different XeCl excimer lasers ( λ =308 nm) with different pulse characteristics (20 and 200 ns). We examine the influence of the pulse duration on LTP of B + (with and without Ge + pre-amorphization) implanted silicon samples on the basis of real-time optical monitoring of the laser induced process, four-point probe resistivity measurements and secondary ion mass spectroscopy (SIMS) depth profiles. Experimental results are compared to model calculations for both laser pulses. The activated dopant dose, Junction depth and sheet resistance, as a function of the laser fluence and shot number for both lasers, confirm the relevance and efficiency of laser processing to realize ultra-Shallow and highly doped Junctions required for the future CMOS generations. Influence of the pulse duration on the USJ formation process is also discussed. In particular, we show the capabilities of the 200 ns pulse to activate B in Si without melting the Si doped layer.
-
gas immersion laser doping gild for ultra Shallow Junction formation
Thin Solid Films, 2004Co-Authors: G Kerrien, M Hernandez, C Laviron, T Sarnet, J Boulmer, D Debarre, M N SemeriaAbstract:Abstract Gas immersion laser doping (GILD) is a very attractive technique to realize the ultra-Shallow and highly doped Junctions required by the International Technology Roadmap for Semiconductors (ITRS) for future CMOS technologies. In the present work, gaseous dopant precursors (BCl 3 ) are chemisorbed on the Si surface, and partially incorporated during the melting/recrystallisation of the Si top layer induced by an UV laser pulse ( λ =308 nm, pulse duration ≈25 ns). The resulting thickness and dopant concentration of the doped layer depend on the laser energy density and the number of chemisorption/laser-induced incorporation cycles (up to 200). GILD processed Junctions are box-like and exhibit depths ranging from 14 nm to 65 nm, with sheet resistances ranging from ≈110 to 20 Ω/□ (respectively), dopant concentrations well above the B solubility limit in Si (up to 3×10 21 at/cm 3 ) at local thermodynamic equilibrium (LTE) and abruptness of 5–2 nm/decade. Moreover, in situ optical characterization shows the GILD technique capabilities to realize the sub-10 nm thick Shallow Junctions needed for the sub-40 nm node ITRS predictions.
-
laser thermal processing for ultra Shallow Junction formation numerical simulation and comparison with experiments
Applied Surface Science, 2003Co-Authors: M Hernandez, J Venturini, G Kerrien, C Laviron, T Sarnet, J Boulmer, D Debarre, D Zahorski, M N Semeria, D CamelAbstract:Abstract In the last few years, laser thermal processing (LTP) has become a potential solution for sub-0.1 μm technology requirements, as focused by the international technology roadmap for semiconductors (ITRS). This paper presents a numerical simulation of the propagation of the melting front and regrowth of Si-based structures during excimer (XeCl-308 nm) laser irradiation. The influence of the pulse duration is highlighted in the simulation and compared with experiments. Two different types of XeCl lasers with different pulse durations have been used for the experiments in order to validate the model (SOPRA VEL 15, 200 ns, 15 J and Compex Lambda Physik, 20 ns, 200 mJ). The comparison between the simulation and the experimental results has been carried out using results from in situ reflectance measurements (transient reflectivity), secondary ion mass spectroscopy, spreading resistance profiles and four-point probes. The different implantation conditions used for this study were B + or BF 2 + implanted Si wafers, with or without Ge + pre-amorphization. Both experimental and simulation results show the potentiality of the LTP annealing technique for realization of ultra Shallow Junction under 0.1 μm.