The Experts below are selected from a list of 2658 Experts worldwide ranked by ideXlab platform
R Koga - One of the best experts on this subject based on the ideXlab platform.
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Single Event Upsets in xilinx virtex 4 fpga devices
Radiation Effects Data Workshop, 2006Co-Authors: J George, Carl Carmichael, R Koga, G M Swift, Gregory R Allen, Chen Wei TsengAbstract:We present Single Event Upset sensitivities for three Xilinx Virtex-4 field-programmable-gate-array (FPGA) devices in protons and heavy ions. Upsets are identified in each functional block and results compared with previous device generations.
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comparison of xilinx virtex ii fpga see sensitivities to protons and heavy ions
European Conference on Radiation and Its Effects on Components and Systems, 2003Co-Authors: R Koga, J George, G M Swift, C Carmichael, Larry Edmonds, C Yui, T Langley, P Murray, K Lanes, M NapierAbstract:A comparison of heavy-ion and proton-induced Single Event effect sensitivities has been made using the Xilinx Virtex-II field programmable gate array (FPGA). Recently fabricated test samples are selected for observations of Single Event Upset and Single Event functional interrupt. A complex relationship appears to exist between the heavy ion and proton sensitivities due to effects such as multiple-bit Upsets and elastic nuclear scattering.
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Single Event Upset seu sensitivity dependence of linear integrated circuits ics on bias conditions
IEEE Transactions on Nuclear Science, 1997Co-Authors: R Koga, S D Pinkerton, Steven C Moss, Stephen Lalumondiere, K B Crawford, W R Crain, S H Penzin, M C MaherAbstract:The Single Event Upset (SEU) sensitivity of certain types of linear microcircuits is strongly affected by bias conditions. For these devices, a model of Upset mechanism and a method for SEU control have been suggested.
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Single Event Upset seu sensitivity dependence of linear integrated circuits ics on bias conditions
IEEE Transactions on Nuclear Science, 1997Co-Authors: R Koga, S D Pinkerton, Steven C Moss, Stephen Lalumondiere, K B Crawford, W R Crain, S H Penzin, M C MaherAbstract:The Single Event Upset (SEU) sensitivity of certain types of linear microcircuits is strongly affected by bias conditions. For these devices, a model of Upset mechanism and a method for SEU control have been suggested.
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the seu in pulse width modulation controllers with soft start and shutdown circuits
Radiation Effects Data Workshop, 1997Co-Authors: S H Penzin, K B Crawford, S J Hansel, W R Crain, R KogaAbstract:A study was done of Single Event Upset (SEU) in pulse width modulation (PWM) controllers which feature either soft start or shutdown circuits. Upsets occurring in the soft start circuit of these devices may greatly effect the external circuit depending on the configuration of the PWM.
L W Massengill - One of the best experts on this subject based on the ideXlab platform.
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Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model
IEEE Transactions on Nuclear Science, 2018Co-Authors: J. M. Trippe, B Narasimham, R A Reed, K M Warren, L W Massengill, R D Schrimpf, R. A. Austin, B. D. Sierawski, R. A. Weller, B. BartzAbstract:Muon-induced Single-Event Upset cross sections are estimated for a 28-nm static random access memory (SRAM) using Monte Carlo simulations informed by ion test results. As an exercise in modeling with limited information, details of the 28-nm SRAM's cell structure were not used (and not available) to inform choices of device model parameters such as sensitive volume dimensions and efficiencies. Instead, inferences were made based on heavy-ion and proton Single Event Upset data. Volume dimensions were sufficiently small to resolve the charge collection profile resulting from highly localized low linear energy transfer particle strikes. Results are compared to muon experimental data taken at TRIUMF for validation. Rate predictions are made for the 28-nm SRAM using the calibrated model and compared to expected neutron rates. Muon-induced Upset rates at sea level for both marginally reduced and significantly reduced electrical biases, as well as rates at 39 000 feet, are predicted to be significantly less than neutron rates in all these environments. This result is consistent with other authors' efforts in similarly scaled bulk CMOS SRAMs, indicating that the modeling method used is reliable.
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heavy ion testing and Single Event Upset rate prediction considerations for a dice flip flop
IEEE Transactions on Nuclear Science, 2009Co-Authors: K M Warren, Robert. A. Weller, J D Black, R A Reed, A L Sternberg, R D Schrimpf, M H Mendenhall, L W MassengillAbstract:Monte-Carlo simulation using the MRED software suite, coupled with SPICE analysis, is used to identify internal mechanisms of SEU in DICE flip-flops. Low frequency cross-section measurements and simulations identify multiple-node charge collection SEU mechanisms as the dominant contributor. An increasingly isotropic response is predicted with increasing frequency due to latching of internal Single-node transients near clock boundaries. Implications for heavy ion testing and SEU rate prediction are presented.
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integrating circuit level simulation and monte carlo radiation transport code for Single Event Upset analysis in seu hardened circuitry
IEEE Transactions on Nuclear Science, 2008Co-Authors: K M Warren, Robert. A. Weller, Marcus H Mendenhall, R A Reed, A L Sternberg, M P Baze, L W Massengill, R D SchrimpfAbstract:Monte-Carlo radiation transport code is coupled with SPICE circuit level simulation to identify regions of Single Event Upset vulnerability in an SEU hardened flip-flop, as well as predict Single Event Upset cross sections and on-orbit soft error rates under static and dynamic operating conditions.
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Single Event Upsets in deep submicrometer technologies due to charge sharing
IEEE Transactions on Device and Materials Reliability, 2008Co-Authors: O A Amusan, B L Bhuva, A F Witulski, A L Sternberg, M P Baze, L W Massengill, J D BlackAbstract:Circuit and 3D technology computer aided design mixed-mode simulations show that the Single Event Upset vulnerability of 130- and 90-nm hardened latches to low linear energy transfer (LET) particles is due to charge sharing between multiple nodes as a result of a Single ion strike. The low LET vulnerability of the hardened latches is verified experimentally.
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monte carlo based on orbit Single Event Upset rate prediction for a radiation hardened by design latch
IEEE Transactions on Nuclear Science, 2007Co-Authors: K M Warren, P. E. Dodd, Robert. A. Weller, Marcus H Mendenhall, R A Reed, R D Schrimpf, Brian D Sierawski, C Carmichael, A Lesea, L W MassengillAbstract:Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional Single sensitive volume or classical rectangular parallelepiped model of Single Event Upset. TCAD and SPICE analysis demonstrate a SEU mechanism dominated by multiple node charge collection. Monte Carlo simulation is used to model the response and predict an on-orbit error rate.
P. E. Dodd - One of the best experts on this subject based on the ideXlab platform.
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radiation hardness assurance testing of microelectronic devices and integrated circuits test guideline for proton and heavy ion Single Event effects
IEEE Transactions on Nuclear Science, 2013Co-Authors: J R Schwank, Marty R. Shaneyfelt, P. E. DoddAbstract:This document gives detailed test guidelines for Single-Event Upset (SEU), Single-Event latchup (SEL), Single-Event burnout (SEB), and Single-Event gate rupture (SEGR) hardness assurance testing. It includes guidelines for both heavy-ion and proton environments. The guidelines are based on many years of testing at remote site facilities and our present understanding of the mechanisms for Single-Event effects.
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low energy proton Single Event Upset test results on 65 nm soi sram
IEEE Transactions on Nuclear Science, 2008Co-Authors: D F Heidel, P. E. Dodd, Melanie D Berg, M Friendlich, Kenneth A Label, J R Schwank, P W Marshall, Kenneth P Rodbell, Mark C Hakey, A PhanAbstract:Experimental results are presented on proton induced Single-Event-Upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results are very different for the 65 nm SRAM as compared with SRAMs fabricated in previous technology generations. Specifically, no Upset threshold is observed as the proton energy is decreased down to 1 MeV; and a sharp rise in the Upset cross-section is observed below 1 MeV. The increase below 1 MeV is attributed to Upsets caused by direct ionization from the low energy protons. The implications of the low energy proton Upsets are discussed for space applications of 65 nm SRAMs; and the implications for radiation assurance testing are also discussed.
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characterizing sram Single Event Upset in terms of Single and multiple node charge collection
IEEE Transactions on Nuclear Science, 2008Co-Authors: J D Black, D R Ball, R A Reed, K M Warren, R D Schrimpf, William H Robinson, D M Fleetwood, Dolores A Black, A D Tipton, P. E. DoddAbstract:A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell Upset patterns for direct charge collection and the well-collapse source-injection mechanisms are predicted and compared to SRAM test data.
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impact of heavy ion energy and nuclear interactions on Single Event Upset and latchup in integrated circuits
IEEE Transactions on Nuclear Science, 2007Co-Authors: P. E. Dodd, Marty R. Shaneyfelt, R A Reed, K M Warren, J R Schwank, J A Felix, P Paillet, V Ferletcavrois, J Baggio, Robert. A. WellerAbstract:The effects of heavy ion energy and nuclear interactions on the Single-Event Upset (SEU) and Single-Event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced Upsets, little difference is observed in Single-Event Upset and latchup cross sections measured using low versus high energy heavy ions. However, significant differences between low- and high-energy heavy ion test results are observed below the threshold LET for Single-node direct ionization-induced Upsets. The data suggest that secondary particles produced by nuclear interactions play a role in determining the SEU and SEL hardness of integrated circuits, especially at low LET. The role of nuclear interactions and implications for radiation hardness assurance and rate prediction are discussed.
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monte carlo based on orbit Single Event Upset rate prediction for a radiation hardened by design latch
IEEE Transactions on Nuclear Science, 2007Co-Authors: K M Warren, P. E. Dodd, Robert. A. Weller, Marcus H Mendenhall, R A Reed, R D Schrimpf, Brian D Sierawski, C Carmichael, A Lesea, L W MassengillAbstract:Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional Single sensitive volume or classical rectangular parallelepiped model of Single Event Upset. TCAD and SPICE analysis demonstrate a SEU mechanism dominated by multiple node charge collection. Monte Carlo simulation is used to model the response and predict an on-orbit error rate.
R A Reed - One of the best experts on this subject based on the ideXlab platform.
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Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model
IEEE Transactions on Nuclear Science, 2018Co-Authors: J. M. Trippe, B Narasimham, R A Reed, K M Warren, L W Massengill, R D Schrimpf, R. A. Austin, B. D. Sierawski, R. A. Weller, B. BartzAbstract:Muon-induced Single-Event Upset cross sections are estimated for a 28-nm static random access memory (SRAM) using Monte Carlo simulations informed by ion test results. As an exercise in modeling with limited information, details of the 28-nm SRAM's cell structure were not used (and not available) to inform choices of device model parameters such as sensitive volume dimensions and efficiencies. Instead, inferences were made based on heavy-ion and proton Single Event Upset data. Volume dimensions were sufficiently small to resolve the charge collection profile resulting from highly localized low linear energy transfer particle strikes. Results are compared to muon experimental data taken at TRIUMF for validation. Rate predictions are made for the 28-nm SRAM using the calibrated model and compared to expected neutron rates. Muon-induced Upset rates at sea level for both marginally reduced and significantly reduced electrical biases, as well as rates at 39 000 feet, are predicted to be significantly less than neutron rates in all these environments. This result is consistent with other authors' efforts in similarly scaled bulk CMOS SRAMs, indicating that the modeling method used is reliable.
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heavy ion testing and Single Event Upset rate prediction considerations for a dice flip flop
IEEE Transactions on Nuclear Science, 2009Co-Authors: K M Warren, Robert. A. Weller, J D Black, R A Reed, A L Sternberg, R D Schrimpf, M H Mendenhall, L W MassengillAbstract:Monte-Carlo simulation using the MRED software suite, coupled with SPICE analysis, is used to identify internal mechanisms of SEU in DICE flip-flops. Low frequency cross-section measurements and simulations identify multiple-node charge collection SEU mechanisms as the dominant contributor. An increasingly isotropic response is predicted with increasing frequency due to latching of internal Single-node transients near clock boundaries. Implications for heavy ion testing and SEU rate prediction are presented.
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integrating circuit level simulation and monte carlo radiation transport code for Single Event Upset analysis in seu hardened circuitry
IEEE Transactions on Nuclear Science, 2008Co-Authors: K M Warren, Robert. A. Weller, Marcus H Mendenhall, R A Reed, A L Sternberg, M P Baze, L W Massengill, R D SchrimpfAbstract:Monte-Carlo radiation transport code is coupled with SPICE circuit level simulation to identify regions of Single Event Upset vulnerability in an SEU hardened flip-flop, as well as predict Single Event Upset cross sections and on-orbit soft error rates under static and dynamic operating conditions.
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characterizing sram Single Event Upset in terms of Single and multiple node charge collection
IEEE Transactions on Nuclear Science, 2008Co-Authors: J D Black, D R Ball, R A Reed, K M Warren, R D Schrimpf, William H Robinson, D M Fleetwood, Dolores A Black, A D Tipton, P. E. DoddAbstract:A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell Upset patterns for direct charge collection and the well-collapse source-injection mechanisms are predicted and compared to SRAM test data.
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impact of heavy ion energy and nuclear interactions on Single Event Upset and latchup in integrated circuits
IEEE Transactions on Nuclear Science, 2007Co-Authors: P. E. Dodd, Marty R. Shaneyfelt, R A Reed, K M Warren, J R Schwank, J A Felix, P Paillet, V Ferletcavrois, J Baggio, Robert. A. WellerAbstract:The effects of heavy ion energy and nuclear interactions on the Single-Event Upset (SEU) and Single-Event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced Upsets, little difference is observed in Single-Event Upset and latchup cross sections measured using low versus high energy heavy ions. However, significant differences between low- and high-energy heavy ion test results are observed below the threshold LET for Single-node direct ionization-induced Upsets. The data suggest that secondary particles produced by nuclear interactions play a role in determining the SEU and SEL hardness of integrated circuits, especially at low LET. The role of nuclear interactions and implications for radiation hardness assurance and rate prediction are discussed.
D Mcmorrow - One of the best experts on this subject based on the ideXlab platform.
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Single Event Upset in flip chip sram induced by through wafer two photon absorption
IEEE Transactions on Nuclear Science, 2005Co-Authors: D Mcmorrow, W T Lotshaw, Joseph S Melinger, S Buchner, J D Davis, Reed K Lawrence, J H Bowman, Ronald D Brown, D Carlton, J PenaAbstract:The Single-Event Upset response of a Single-Event hardened SRAM 10-transistor cell is mapped in two dimensions via carrier injection by two-photon absorption through the back (substrate) surface in a flip-chip mounted 4 Mb SRAM. Using through-wafer carrier injection, charge is deposited into the active regions of the device at well-defined locations in a reproducible manner, and the Single-Event Upset sensitive region of the device is localized to within /spl plusmn/0.3 micrometers.
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application of a pulsed laser for evaluation and optimization of seu hard designs cmos
European Conference on Radiation and Its Effects on Components and Systems, 1999Co-Authors: D Mcmorrow, Joseph S Melinger, S Buchner, Ronald D Brown, T Scott, Nadim F HaddadAbstract:Pulsed laser Single-Event Upset tests are used to pinpoint and characterize sensitive nodes of circuits and to provide feedback relevant to the development and optimization of radiation-hard designs. The results presented reveal the advantages of incorporating laser evaluation at an early stage into programs described for the development of radiation-hardened parts. A quantitative correlation is observed between the laser Single-Event Upset and Single-Event latchup threshold measurements and those performed using accelerator-based heavy ion testing methods.
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pulsed laser induced Single Event Upset and charge collection measurements as a function of optical penetration depth
Journal of Applied Physics, 1998Co-Authors: Joseph S Melinger, A B Campbell, D Mcmorrow, Stephen P Buchner, Lan Hu Tran, A R Knudson, W R CurticeAbstract:We use picosecond laser pulses to investigate Single Event Upsets and related fundamental charge collection mechanisms in semiconductor microelectronic devices and circuits. By varying the laser wavelength the incident laser pulses deposit charge tracks of variable length, which form an approximation to the charge tracks resulting from high energy space particle strikes. We show how variation of the charge track length deposited by laser pulses allows the mechanisms of charge collection in semiconductor devices to be probed in a sensitive manner. With the aid of computer simulations, new insight into charge collection mechanisms for metal–semiconductor field effect transistor (MESFET) devices and heterojunction bipolar transistor devices is found. In the case of the MESFET we point out the correlation between charge collection in the device and the ensuing Single Event Upset in the composite circuit. In favorable cases, we show how probing circuits with tunable laser pulses can estimate a charge collectio...
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Single Event Upset cross sections at various data rates
IEEE Transactions on Nuclear Science, 1996Co-Authors: R A Reed, S Buchner, M A Carts, P W Marshall, C J Marshall, M La Macchia, B Mathes, D McmorrowAbstract:We present data which show that Single Event Upset (SEU) cross section varies linearly with frequency for most devices tested. We show that the SEU cross section can increase dramatically away from a linear relationship when the test setup is not optimized, or when testing near the maximum operating frequency. We also observe non-linear behavior in some complex circuit topologies. Knowledge of the relationship between SEU cross section and frequency is important for estimates of on-orbit SEU rates.
