The Experts below are selected from a list of 279 Experts worldwide ranked by ideXlab platform

Ruben Lieten - One of the best experts on this subject based on the ideXlab platform.

  • single crystalline sige layers on si by Solid Phase Epitaxy
    Journal of Crystal Growth, 2015
    Co-Authors: Ruben Lieten, J C Mccallum, B C Johnson
    Abstract:

    Abstract We demonstrate a straightforward way to obtain single crystalline SiGe layers on silicon substrates. Amorphous SiGe layers, deposited by plasma enhanced chemical vapour deposition on Si, are transformed into single crystalline and smooth layers by Solid Phase Epitaxy during annealing in a N 2 atmosphere. The SiGe layers relax during the crystallization anneal and become slightly tensile strained during cooldown due to the thermal mismatch. The SiGe layers show excellent structural quality for compositions ranging from Ge- to Si-rich. The Ge content can be accurately estimated from the SiH 4 to GeH 4 flow ratio. Furthermore, the crystallization temperature decreases linearly with increasing Ge content from 725 °C for a-Si to 475 °C for a-Ge.

  • Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy
    Applied Physics Express, 2013
    Co-Authors: Ruben Lieten, Tatsuro Maeda, Wipakorn Jevasuwan, Hiroyuki Hattori, Noriyuki Uchida, Shu Miura, Masatoshi Tanaka, Jeanpierre Locquet
    Abstract:

    We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using Solid Phase Epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by Solid Phase Epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel MOSFETs (pMOSFETs) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMOSFETs on Si substrates.

  • tensile strained gesn metal oxide semiconductor field effect transistor devices on si 111 using Solid Phase Epitaxy
    Applied Physics Express, 2013
    Co-Authors: Ruben Lieten, Tatsuro Maeda, Wipakorn Jevasuwan, Hiroyuki Hattori, Noriyuki Uchida, Shu Miura, Masatoshi Tanaka, Jeanpierre Locquet
    Abstract:

    We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using Solid Phase Epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by Solid Phase Epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel MOSFETs (pMOSFETs) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMOSFETs on Si substrates.

  • tensile strained gesn on si by Solid Phase Epitaxy
    Applied Physics Letters, 2013
    Co-Authors: Ruben Lieten, S Decoster, Andre Vantomme, Sven Peters, Karen C Bustillo, E E Haller, Mariela Menghini, Jeanpierre Locquet
    Abstract:

    We demonstrate single crystalline GeSn with tensile strain on silicon substrates. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single crystalline GeSn by Solid Phase Epitaxy. Excellent structural quality is demonstrated for layers with up to 6.1% of Sn. The GeSn layers show tensile strain (up to +0.34%), which lowers the difference between direct and indirect band transition and makes this method promising for obtaining direct band gap group IV layers. GeSn with 4.5% Sn shows increased optical absorption compared to Ge and an optical band gap of 0.52 eV.

  • Solid Phase Epitaxy of Germanium on Silicon substrates
    MRS Proceedings, 2011
    Co-Authors: Ruben Lieten, Quan-bao Ma, J. Guzman, Joel W. Ager, Eugene E. Haller, Jeanpierre Locquet
    Abstract:

    ABSTRACTWe demonstrate the possibilities of plasma enhanced chemical vapor deposition (PECVD) and Solid Phase Epitaxy to obtain germanium on silicon with excellent crystalline properties, even for very thin layers (< 100 nm). Amorphous germanium layers are deposited by PECVD on silicon substrates. Deposition of an amorphous layer, without the presence of crystalline seeds, is critical. Crystalline inclusions must be avoided to obtain high crystal quality and a smooth surface after crystallization. PECVD is well suited for deposition of amorphous layers because low temperature deposition and high growth rates are possible. Additional experiments with molecular beam Epitaxy show that it is not mandatory to have hydrogen present inside the germanium layer to obtain highly crystalline germanium. Atomic hydrogen plays, however, an important role during deposition by lowering the surface adatom mobility and consequently increasing the disorder of the deposited layer. Synchrotron X-ray diffraction shows no germanium diffraction, indicating that the layer does not contain crystalline seeds. Crystallization can be performed at limited temperatures: Raman measurements show crystallization between 400 and 425 °C. Another important advantage of the proposed method is the scalability: germanium layers of larger diameter can be obtained by simply using larger silicon substrates.

Jeanpierre Locquet - One of the best experts on this subject based on the ideXlab platform.

  • Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy
    Applied Physics Express, 2013
    Co-Authors: Ruben Lieten, Tatsuro Maeda, Wipakorn Jevasuwan, Hiroyuki Hattori, Noriyuki Uchida, Shu Miura, Masatoshi Tanaka, Jeanpierre Locquet
    Abstract:

    We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using Solid Phase Epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by Solid Phase Epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel MOSFETs (pMOSFETs) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMOSFETs on Si substrates.

  • tensile strained gesn metal oxide semiconductor field effect transistor devices on si 111 using Solid Phase Epitaxy
    Applied Physics Express, 2013
    Co-Authors: Ruben Lieten, Tatsuro Maeda, Wipakorn Jevasuwan, Hiroyuki Hattori, Noriyuki Uchida, Shu Miura, Masatoshi Tanaka, Jeanpierre Locquet
    Abstract:

    We demonstrate tensile-strained GeSn metal–oxide–semiconductor field-effect transistor (MOSFET) devices on Si(111) substrates using Solid Phase Epitaxy of amorphous GeSn layers. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by Solid Phase Epitaxy. Single-crystalline GeSn layers with 4.5% Sn and 0.33% tensile strain are fabricated on Si(111) substrates. To verify the structural quality of thin-film GeSn as a channel material, we fabricate ultrathin GeSn p-channel MOSFETs (pMOSFETs) on Si(111). We demonstrate junctionless depletion-mode operation of tensile-strained GeSn(111) pMOSFETs on Si substrates.

  • tensile strained gesn on si by Solid Phase Epitaxy
    Applied Physics Letters, 2013
    Co-Authors: Ruben Lieten, S Decoster, Andre Vantomme, Sven Peters, Karen C Bustillo, E E Haller, Mariela Menghini, Jeanpierre Locquet
    Abstract:

    We demonstrate single crystalline GeSn with tensile strain on silicon substrates. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single crystalline GeSn by Solid Phase Epitaxy. Excellent structural quality is demonstrated for layers with up to 6.1% of Sn. The GeSn layers show tensile strain (up to +0.34%), which lowers the difference between direct and indirect band transition and makes this method promising for obtaining direct band gap group IV layers. GeSn with 4.5% Sn shows increased optical absorption compared to Ge and an optical band gap of 0.52 eV.

  • Solid Phase Epitaxy of Germanium on Silicon substrates
    MRS Proceedings, 2011
    Co-Authors: Ruben Lieten, Quan-bao Ma, J. Guzman, Joel W. Ager, Eugene E. Haller, Jeanpierre Locquet
    Abstract:

    ABSTRACTWe demonstrate the possibilities of plasma enhanced chemical vapor deposition (PECVD) and Solid Phase Epitaxy to obtain germanium on silicon with excellent crystalline properties, even for very thin layers (< 100 nm). Amorphous germanium layers are deposited by PECVD on silicon substrates. Deposition of an amorphous layer, without the presence of crystalline seeds, is critical. Crystalline inclusions must be avoided to obtain high crystal quality and a smooth surface after crystallization. PECVD is well suited for deposition of amorphous layers because low temperature deposition and high growth rates are possible. Additional experiments with molecular beam Epitaxy show that it is not mandatory to have hydrogen present inside the germanium layer to obtain highly crystalline germanium. Atomic hydrogen plays, however, an important role during deposition by lowering the surface adatom mobility and consequently increasing the disorder of the deposited layer. Synchrotron X-ray diffraction shows no germanium diffraction, indicating that the layer does not contain crystalline seeds. Crystallization can be performed at limited temperatures: Raman measurements show crystallization between 400 and 425 °C. Another important advantage of the proposed method is the scalability: germanium layers of larger diameter can be obtained by simply using larger silicon substrates.

E Bugiel - One of the best experts on this subject based on the ideXlab platform.

J Klatt - One of the best experts on this subject based on the ideXlab platform.

H J Osten - One of the best experts on this subject based on the ideXlab platform.