The Experts below are selected from a list of 60 Experts worldwide ranked by ideXlab platform

Seyed Ali Sedigh Ziabari - One of the best experts on this subject based on the ideXlab platform.

  • representation of heterostructure electrically doped nanoscale tunnel fet with gaussian doping profile for high performance low power applications
    International Nano Letters, 2018
    Co-Authors: Maryam Abedini, Seyed Ali Sedigh Ziabari, Abdollah Eskandarian
    Abstract:

    In this paper, a gallium antimonide junctionless tunnel field-effect transistor based on electrically doped concept (GaSb–EDTFET) is studied and simulated. The performance of the device is analyzed based on the energy band diagram and electric field profile. The on-current, transconductance, and cut-off frequency are enhanced in case of GaSb–EDTFET compared with Si-EDTFET due to the combination of the high tunneling efficiency of the narrow bandgap and the high-electron mobility of GaSb. On the other hand, the Gaussian-doping profile decreases the ambipolar and off current by increasing the tunneling barrier length at the drain/channel Interface. Hence, applying Gaussian-doping profile on GaSb–EDTFET makes it a suitable candidate for analog and digital applications. Next, heterostructure channel/Source Interface EDTFET is studied which uses GaSb for the Source and AlGaSb for the drain and channel regions. Then, it has been optimized by numerical simulation in terms of aluminum (Al) composition. The optimal Al composition was founded to be around 10% (x = 0.1). It is shown that the blend of Gaussian-doping profile and the heterostructure channel/Source Interface with optimal Al composition remarkably reduces ambipolar current amount to a value of 1.3 × 10−23 A/μm. The improvements in terms of Ioff, Ion, Ion/Ioff rate, subthreshold swing, transconductance, cut-off frequency, and also suppressed ambipolar behavior are illustrated by numerical simulations.

  • gate engineered heterostructure junctionless tfet with gaussian doping profile for ambipolar suppression and electrical performance improvement
    Superlattices and Microstructures, 2017
    Co-Authors: Hadi Aghandeh, Seyed Ali Sedigh Ziabari
    Abstract:

    Abstract This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/Source Interface (DMG-H-JLTFET). We find that using the heterostructure Interface improves device behavior by reducing the tunneling barrier width at the channel/Source Interface. Simultaneously, the dual material gate structure decreases ambipolar current by increasing the tunneling barrier width at the drain/channel Interface. The performance of the device is analyzed based on the energy band diagram at on, off, and ambipolar states. Numerical simulations demonstrate improvements in ION, IOFF, ION/IOFF, subthreshold slope (SS), transconductance and cut-off frequency and suppressed ambipolar behavior. Next, the workfunction optimization of dual material gate is studied. It is found that if appropriate workfunctions are selected for tunnel and auxiliary gates, the JLTFET exhibits considerably improved performance. We then study the influence of Gaussian doping distribution at the drain and the channel on the ambipolar performance of the device and find that a Gaussian doping profile and a dual material gate structure remarkably reduce ambipolar current. Gaussian doped DMG-H-JLTFET, also exhibits enhanced IOFF, ION/IOFF, SS and a low threshold voltage without degrading IOFF.

Changyou Deng - One of the best experts on this subject based on the ideXlab platform.

  • light Source changing device for high power energy saving lamp
    2009
    Co-Authors: Changyou Deng
    Abstract:

    The utility model relates to a lighting device which enables a user to easily use a more energy-saving light Source through a changing device without replacing the original high-power energy-saving lamp. A lamp improving device of a high-power energy-saving lamp comprises a lampshade, a telescopic changing device and an electrical apparatus control device. If a light Source adopts an LED light Source, the electrical apparatus control device is an LED driving circuit; one end of the telescopic changing device is a power supply Interface matched with the power supply on the lampshade, the other end is a light Source Interface matched with the light Source, and the part between the power supply Interface and the light Source Interface is of a telescopic structure. The utility model provides a novel telescopic changing device for improving an energy-saving lamp and enables a user to use a new type more energy-saving light Source, solve the problems of nonuniform lighting of a metal halogen lamp and out-of-focus of an energy-saving lamp and conveniently use such a novel energy-saving and environment-friendly LED without replacing the lamp installed before.

  • light Source conversion device for high power energy saving lamp
    2008
    Co-Authors: Changyou Deng
    Abstract:

    The invention provides a light Source conversion device of a high-power energy-saving lamp comprising a lamp shield, a telescopic switching device and a circuit control device. The lamp shield is provided with a bell-shaped high-power energy-saving lamp shield. An electrical apparatus control device provides a drive light Source for a corresponding light Source. If the light Source is provided with a LED light Source, the electrical apparatus control device is provided with a LED drive circuit. One end of the telescopic switching device is provided with an electric power Source Interface connecting with an electric power Source on the lamp shield, the other end thereof is provided with a light Source Interface cooperating with the light Source, and the space between the electric power Source and the light Source are telescopic. According to the invention, energy-saving light Sources can be used to replace high-power energy conserving lamps by using conversion devices without replacing high-power energy conserving lamps per se.

David C Muddiman - One of the best experts on this subject based on the ideXlab platform.

  • msireader an open Source Interface to view and analyze high resolving power ms imaging files on matlab platform
    Journal of the American Society for Mass Spectrometry, 2013
    Co-Authors: Guillaume Robichaud, Kenneth P Garrard, Jeremy A Barry, David C Muddiman
    Abstract:

    During the past decade, the field of mass spectrometry imaging (MSI) has greatly evolved, to a point where it has now been fully integrated by most vendors as an optional or dedicated platform that can be purchased with their instruments. However, the technology is not mature and multiple research groups in both academia and industry are still very actively studying the fundamentals of imaging techniques, adapting the technology to new ionization Sources, and developing new applications. As a result, there important varieties of data file formats used to store mass spectrometry imaging data and, concurrent to the development of MSi, collaborative efforts have been undertaken to introduce common imaging data file formats. However, few free software packages to read and analyze files of these different formats are readily available. We introduce here MSiReader, a free open Source application to read and analyze high resolution MSI data from the most common MSi data formats. The application is built on the Matlab platform (Mathworks, Natick, MA, USA) and includes a large selection of data analysis tools and features. People who are unfamiliar with the Matlab language will have little difficult navigating the user-friendly Interface, and users with Matlab programming experience can adapt and customize MSiReader for their own needs.

Hadi Aghandeh - One of the best experts on this subject based on the ideXlab platform.

  • gate engineered heterostructure junctionless tfet with gaussian doping profile for ambipolar suppression and electrical performance improvement
    Superlattices and Microstructures, 2017
    Co-Authors: Hadi Aghandeh, Seyed Ali Sedigh Ziabari
    Abstract:

    Abstract This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/Source Interface (DMG-H-JLTFET). We find that using the heterostructure Interface improves device behavior by reducing the tunneling barrier width at the channel/Source Interface. Simultaneously, the dual material gate structure decreases ambipolar current by increasing the tunneling barrier width at the drain/channel Interface. The performance of the device is analyzed based on the energy band diagram at on, off, and ambipolar states. Numerical simulations demonstrate improvements in ION, IOFF, ION/IOFF, subthreshold slope (SS), transconductance and cut-off frequency and suppressed ambipolar behavior. Next, the workfunction optimization of dual material gate is studied. It is found that if appropriate workfunctions are selected for tunnel and auxiliary gates, the JLTFET exhibits considerably improved performance. We then study the influence of Gaussian doping distribution at the drain and the channel on the ambipolar performance of the device and find that a Gaussian doping profile and a dual material gate structure remarkably reduce ambipolar current. Gaussian doped DMG-H-JLTFET, also exhibits enhanced IOFF, ION/IOFF, SS and a low threshold voltage without degrading IOFF.

Guillaume Robichaud - One of the best experts on this subject based on the ideXlab platform.

  • msireader an open Source Interface to view and analyze high resolving power ms imaging files on matlab platform
    Journal of the American Society for Mass Spectrometry, 2013
    Co-Authors: Guillaume Robichaud, Kenneth P Garrard, Jeremy A Barry, David C Muddiman
    Abstract:

    During the past decade, the field of mass spectrometry imaging (MSI) has greatly evolved, to a point where it has now been fully integrated by most vendors as an optional or dedicated platform that can be purchased with their instruments. However, the technology is not mature and multiple research groups in both academia and industry are still very actively studying the fundamentals of imaging techniques, adapting the technology to new ionization Sources, and developing new applications. As a result, there important varieties of data file formats used to store mass spectrometry imaging data and, concurrent to the development of MSi, collaborative efforts have been undertaken to introduce common imaging data file formats. However, few free software packages to read and analyze files of these different formats are readily available. We introduce here MSiReader, a free open Source application to read and analyze high resolution MSI data from the most common MSi data formats. The application is built on the Matlab platform (Mathworks, Natick, MA, USA) and includes a large selection of data analysis tools and features. People who are unfamiliar with the Matlab language will have little difficult navigating the user-friendly Interface, and users with Matlab programming experience can adapt and customize MSiReader for their own needs.