The Experts below are selected from a list of 17748 Experts worldwide ranked by ideXlab platform
Yasuhito Gotoh - One of the best experts on this subject based on the ideXlab platform.
-
Extraction of molecular negative-ion beams of CN from radio frequency plasma-sputter-type heavy negative ion source for negative-ion beam deposition
Review of Scientific Instruments, 1998Co-Authors: Hiroshi Tsuji, Tetsuo Tomita, Takaaki Yoshihara, Junzo Ishikawa, Yasuhito GotohAbstract:A high current CN negative-ion beam was obtained from a radio frequency plasma-sputter-type heavy negative ion source in a Target-gas mode operation and CN negative-ion beam deposition was investigated. CN negative ions of 0.88 mA were safely obtained by using a carbon Sputtering Target and nitrogen gas instead of cyanogen for ionization. Even in this Target-gas mode operation of the source with N2 gas, the work function of the Sputtering Target surface was effectively decreased by introducing cesium vapor so that the production of CN negative ions was remarkably enhanced. In a CN negative-ion beam deposition on silicon substrate, the nitrogen concentration in deposited layers depended on ion energy and the maximum ratio (N/C) of 0.3 was obtained at an energy of 70 eV. From a Raman spectra with these results, it was found that CN-deposited films were a diamondlike carbon film including nitrogen atoms.
-
Negative‐ion extraction of gaseous materials from a radio frequency plasma‐sputter‐type heavy negative‐ion source
Review of Scientific Instruments, 1996Co-Authors: Hiroshi Tsuji, Tetsuo Tomita, Junzo Ishikawa, Yasuhito GotohAbstract:The operational characteristics of a rf plasma‐sputter‐type heavy negative‐ion source with a feeding of O2 or SF6 gas as an ionized material together with Xe gas is presented. To obtain negative ions of chemically reactive elements, we used a material gas and a stainless‐steel Sputtering Target instead of an oxide or fluoride Sputtering Target to prevent charging trouble. In the source, gas particles adsorbed on the Target surface were negatively ionized by Sputtering. O− or F− was dominant in the extracted beam and increased with the Cs supply until the yield was optimized. Then, high‐current negative ions of mA at an intensity of several, such as 4.6 mA for O− and 4.3 mA for F−, were extracted in a dc mode of operation. Even in this plasma‐sputter source with a material gas feeding, the surface production of negative ions was found to be the dominant mechanism.
-
Radio frequency plasma sputter type heavy negative ion source
Vacuum, 1993Co-Authors: Junzo Ishikawa, Hiroshi Tsuji, Yukio Okada, Masanobu Shinoda, Yasuhito GotohAbstract:Abstract A rf plasma sputter type heavy negative ion source with mA-class ion currents in dc operation has been developed. Although maximum negative ion production efficiencies by Sputtering on a cesiated Sputtering Target surface were high (about 10% or more for Cu, C, Si, Ge and W), electron-detachment cross-sections were also considerably high (about 10 −15 cm 2 ). Therefore, in order to extract an intense negative ion beam through a generated plasma region from a Sputtering Target it is essential that the plasma should be discharged at low gas pressures in the order of 10 −4 torr. By using a rf (13.56 MHz) discharge with a three-turn rf coil 50 mm in diameter, a dense plasma of 10 11 cm −3 order was obtained in the xenon gas pressure range of 10 −5 -10 −4 torr. In this source a Sputtering Target 42 mm in diameter whose surface was part of a sphere was used, and negatively biased by 600 V against the plasma. Extracted total negative ion currents were 6.5 mA for a copper Target and 4.2 mA for a graphite Target, in which electrons were eliminated by a magnetic field near the extraction hole. The concentration of Cu - current in the total copper negative ion current was 96.6%. The percentages of C - and C 2 - currents in the carbon negative ion current was 38.1 and 54.5%, respectively.
-
RF plasma sputter‐type DC‐mode heavy negative ion source
AIP Conference Proceedings, 1992Co-Authors: Hiroshi Tsuji, Junzo Ishikawa, Yasuhito Gotoh, Yukio OkadaAbstract:An RF plasma sputter‐type heavy negative ion source with mA‐class ion currents in DC‐mode has been developed. A dense plasma of 1011 cm−3 order was generated in the xenon gas pressure range of 10−5–10−4 Torr (10−2 Pa), whose low gas pressure discharge is essential to extract produced negative ions without loss (electron detachment). A cesiated Sputtering Target surface (42 mm in diameter) was negatively biased by several hundreds volts against the plasma. The extracted total negative ion currents of 12.5 mA for a copper Target and 4.2 mA for a graphite Target were obtained.
Jaydeep Sarkar - One of the best experts on this subject based on the ideXlab platform.
-
Sputtering Target Manufacturing
Sputtering Materials for VLSI and Thin Film Devices, 2014Co-Authors: Jaydeep SarkarAbstract:This chapter discusses Sputtering Target manufacturing essentials which include design concepts, metallurgical principles of Target fabrication, elements of machining, bonding, bond evaluation, cleaning and packaging. Separate flow charts have been used to highlight unit processing steps used in the manufacturing of Sputtering Target using liquid metallurgy and powder metallurgy processes. Various aspects of thermomechanical processing of Sputtering Targets including recovery, recrystallization, grain growth and dynamic recrystallization are discussed in detail.
-
Performance of Sputtering Targets and Productivity
Sputtering Materials for VLSI and Thin Film Devices, 2014Co-Authors: Jaydeep SarkarAbstract:This chapter discusses role of Sputtering Target performance on overall productivity of a manufacturing process. Here, the term performance of a Sputtering Target is used to describe the ability of a Sputtering Target to deposit thin films with desired properties in a consistent manner under a given set of process parameters, and the term productivity refers to the number of processed wafers with desired film properties. This chapter only provides an overview of the subject and the majority of examples presented here come from the semiconductor industry. Factors that influence productivity of a process include Target design, Target chemistry, Target metallurgy and texture, bond characteristics, level of contamination and also maintenance schedule of process kit. These topics are treated again in greater length in subsequent chapters.
-
Sputtering Targets and Thin Films for Flat Panel Displays and Photovoltaics
Sputtering Materials for VLSI and Thin Film Devices, 2014Co-Authors: Jaydeep SarkarAbstract:In this chapter, a number of materials that are sputter deposited to form thin films for flat panel displays, in particular active matrix liquid crystal displays (AMLCDs) and photovoltaic solar cell modules are reviewed. Considering technology trends, for individual Sputtering Target, Target manufacturing steps and thin films properties have been reviewed. Essentials of aluminum, aluminum-neodymium (Al-Nd), molybdenum, chromium, indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), CIS, CIGS and CZTS have been discussed in light of Sputtering Target making and thin film deposition.
-
Sputtering Targets and Thin Films for Integrated Circuits
Sputtering Materials for VLSI and Thin Film Devices, 2014Co-Authors: Jaydeep SarkarAbstract:This chapter reviews commercially important materials that are either sputtered in pure form (e.g., Al, Al-0.5Cu, Cu, NiV, Ti, W, W-Ti) or reactively (e.g., Ti, Ta) to form a variety of thin films for integrated circuit (IC) manufacturing. These sputter deposited thin films are used for forming silicide contact, conductor, liner, wetting layer, adhesion layer, anti-reflection coating, barrier, self-forming barrier and so forth. Considering technology trend, for individual Sputtering Target, Target manufacturing steps and thin films properties have been reviewed.
-
Sputtering Targets and Sputtered Films for the Microelectronic Industry
Sputtering Materials for VLSI and Thin Film Devices, 2014Co-Authors: Jaydeep SarkarAbstract:A wide variety of materials are sputtered either in pure or in reactive mode to form thin films on chosen substrates for microelectronic applications. Such sputtered thin films are used as silicide contacts, conductors, diffusion barriers, anti-reflection coatings, transparent conducting oxides, reflective layer, semi-reflective layer, dielectric layer, recording media, absorber layer and so forth. In this chapter, commercially important Sputtering Targets and Sputtering chambers (tools) for semiconductor, display, data storage and photovoltaic industries have been identified. This chapter also reviews essential semiconductor, active matrix liquid crystal display (AMLCD), data storage (e.g. magnetic, optical, phase change) and photovoltaic industry topics which include (a) major inventions, (b) technology trends, (c) process flows for device manufacturing, (d) original equipment manufacturers (OEMs) and (e) Sputtering Target suppliers.
A. Monfardini - One of the best experts on this subject based on the ideXlab platform.
-
Uniform Non-stoichiometric Titanium Nitride Thin Films for Improved Kinetic Inductance Detector Arrays
Journal of Low Temperature Physics, 2016Co-Authors: G. Coiffard, K.-f. Schuster, E. F. C. Driessen, S. Pignard, M. Calvo, A. Catalano, J. Goupy, A. MonfardiniAbstract:We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (KID) arrays. Using a 6 $$''$$ ′ ′ Sputtering Target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2 $$''$$ ′ ′ wafer was reduced to $${
-
Uniform non-stoichiometric titanium nitride thin films for improved kinetic inductance detector array
Journal of Low Temperature Physics, 2016Co-Authors: G. Coiffard, K.-f. Schuster, E. F. C. Driessen, S. Pignard, M. Calvo, A. Catalano, J. Goupy, A. MonfardiniAbstract:We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (mKID) arrays. Using a 6 inch Sputtering Target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2 inch wafer was reduced to
Hiroshi Tsuji - One of the best experts on this subject based on the ideXlab platform.
-
Extraction of molecular negative-ion beams of CN from radio frequency plasma-sputter-type heavy negative ion source for negative-ion beam deposition
Review of Scientific Instruments, 1998Co-Authors: Hiroshi Tsuji, Tetsuo Tomita, Takaaki Yoshihara, Junzo Ishikawa, Yasuhito GotohAbstract:A high current CN negative-ion beam was obtained from a radio frequency plasma-sputter-type heavy negative ion source in a Target-gas mode operation and CN negative-ion beam deposition was investigated. CN negative ions of 0.88 mA were safely obtained by using a carbon Sputtering Target and nitrogen gas instead of cyanogen for ionization. Even in this Target-gas mode operation of the source with N2 gas, the work function of the Sputtering Target surface was effectively decreased by introducing cesium vapor so that the production of CN negative ions was remarkably enhanced. In a CN negative-ion beam deposition on silicon substrate, the nitrogen concentration in deposited layers depended on ion energy and the maximum ratio (N/C) of 0.3 was obtained at an energy of 70 eV. From a Raman spectra with these results, it was found that CN-deposited films were a diamondlike carbon film including nitrogen atoms.
-
Negative‐ion extraction of gaseous materials from a radio frequency plasma‐sputter‐type heavy negative‐ion source
Review of Scientific Instruments, 1996Co-Authors: Hiroshi Tsuji, Tetsuo Tomita, Junzo Ishikawa, Yasuhito GotohAbstract:The operational characteristics of a rf plasma‐sputter‐type heavy negative‐ion source with a feeding of O2 or SF6 gas as an ionized material together with Xe gas is presented. To obtain negative ions of chemically reactive elements, we used a material gas and a stainless‐steel Sputtering Target instead of an oxide or fluoride Sputtering Target to prevent charging trouble. In the source, gas particles adsorbed on the Target surface were negatively ionized by Sputtering. O− or F− was dominant in the extracted beam and increased with the Cs supply until the yield was optimized. Then, high‐current negative ions of mA at an intensity of several, such as 4.6 mA for O− and 4.3 mA for F−, were extracted in a dc mode of operation. Even in this plasma‐sputter source with a material gas feeding, the surface production of negative ions was found to be the dominant mechanism.
-
Radio frequency plasma sputter type heavy negative ion source
Vacuum, 1993Co-Authors: Junzo Ishikawa, Hiroshi Tsuji, Yukio Okada, Masanobu Shinoda, Yasuhito GotohAbstract:Abstract A rf plasma sputter type heavy negative ion source with mA-class ion currents in dc operation has been developed. Although maximum negative ion production efficiencies by Sputtering on a cesiated Sputtering Target surface were high (about 10% or more for Cu, C, Si, Ge and W), electron-detachment cross-sections were also considerably high (about 10 −15 cm 2 ). Therefore, in order to extract an intense negative ion beam through a generated plasma region from a Sputtering Target it is essential that the plasma should be discharged at low gas pressures in the order of 10 −4 torr. By using a rf (13.56 MHz) discharge with a three-turn rf coil 50 mm in diameter, a dense plasma of 10 11 cm −3 order was obtained in the xenon gas pressure range of 10 −5 -10 −4 torr. In this source a Sputtering Target 42 mm in diameter whose surface was part of a sphere was used, and negatively biased by 600 V against the plasma. Extracted total negative ion currents were 6.5 mA for a copper Target and 4.2 mA for a graphite Target, in which electrons were eliminated by a magnetic field near the extraction hole. The concentration of Cu - current in the total copper negative ion current was 96.6%. The percentages of C - and C 2 - currents in the carbon negative ion current was 38.1 and 54.5%, respectively.
-
RF plasma sputter‐type DC‐mode heavy negative ion source
AIP Conference Proceedings, 1992Co-Authors: Hiroshi Tsuji, Junzo Ishikawa, Yasuhito Gotoh, Yukio OkadaAbstract:An RF plasma sputter‐type heavy negative ion source with mA‐class ion currents in DC‐mode has been developed. A dense plasma of 1011 cm−3 order was generated in the xenon gas pressure range of 10−5–10−4 Torr (10−2 Pa), whose low gas pressure discharge is essential to extract produced negative ions without loss (electron detachment). A cesiated Sputtering Target surface (42 mm in diameter) was negatively biased by several hundreds volts against the plasma. The extracted total negative ion currents of 12.5 mA for a copper Target and 4.2 mA for a graphite Target were obtained.
Kamal Alameh - One of the best experts on this subject based on the ideXlab platform.
-
high sensitivity ph sensor employing a sub micron ruthenium oxide thin film in conjunction with a thick reference electrode
Sensors and Actuators A-physical, 2013Co-Authors: Devendra Maurya, Ali Sardarinejad, Kamal AlamehAbstract:Abstract We demonstrate the feasibility of developing a low-cost, rugged, miniaturized ruthenium oxide (RuO 2 ) thin-film pH sensor comprising a RuO 2 on platinum sensing electrode deposited using R.F. magnetron sputtered in conjunction with an integrated thick Ag/AgCl reference electrode. A RuO 2 thin-film (300 nm) is deposited on an alumina substrate using R. F. magnetron Sputtering with a RuO 2 Sputtering Target in Argon plasma. Experimental results show a linear pH sensitivity of 58.50 mV/pH when the developed sensor is immersed in a standard buffer solution having pH values of 4.0 and 10.0 and lab supply water of pH 7.7 at a temperature of 22 °C. These results are in excellent agreement with the theoretical Nernstian response of 58.56 mV/pH at 22 °C.
-
high sensitivity ph sensor employing a sub micron ruthenium oxide thin film in conjunction with a thick reference electrode
Sensors and Actuators A-physical, 2013Co-Authors: Devendra Maurya, Ali Sardarinejad, Kamal AlamehAbstract:Abstract We demonstrate the feasibility of developing a low-cost, rugged, miniaturized ruthenium oxide (RuO 2 ) thin-film pH sensor comprising a RuO 2 on platinum sensing electrode deposited using R.F. magnetron sputtered in conjunction with an integrated thick Ag/AgCl reference electrode. A RuO 2 thin-film (300 nm) is deposited on an alumina substrate using R. F. magnetron Sputtering with a RuO 2 Sputtering Target in Argon plasma. Experimental results show a linear pH sensitivity of 58.50 mV/pH when the developed sensor is immersed in a standard buffer solution having pH values of 4.0 and 10.0 and lab supply water of pH 7.7 at a temperature of 22 °C. These results are in excellent agreement with the theoretical Nernstian response of 58.56 mV/pH at 22 °C.
