The Experts below are selected from a list of 5619 Experts worldwide ranked by ideXlab platform
Andrea Irace - One of the best experts on this subject based on the ideXlab platform.
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self Sustained turn off Oscillation of sic mosfets origin instability analysis and prevention
Energies, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:This paper presents a comprehensive investigation on the self-Sustained Oscillation of silicon carbide (SiC) MOSFETs. At first, based on the double pulse switching test, it is identified that the self-Sustained Oscillation of SiC MOSFETs can be triggered by two distinct test conditions. To investigate the oscillatory criteria of the two types of self-Sustained Oscillation, a small-signal ac model is introduced to obtain the transfer function of the oscillatory system. The instability of the Oscillation is thereby determined by the two conjugate pole pairs of the transfer function. By analyzing the damping ratios of the two pole pairs, the parametric sensitivity of various circuit and device’s parameters on the two types of self-Sustained Oscillation are obtained. The analyses reveal the oscillatory criteria of the self-Sustained Oscillation for SiC MOSFETs. Based on the oscillatory criteria, necessary methods are proposed to prevent the Oscillation. The proposed Oscillation suppression methods are validated by the experiment at the end of the paper.
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Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode
IEEE Transactions on Electron Devices, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:This paper presents the analyses on the self-Sustained Oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-Sustained Oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse switching test. The test results show that the self-Sustained Oscillation with significant self-amplification phenomenon can be triggered during the reverse recovery transient of superjunction MOSFET intrinsic diode. Based on the Sentaurus TCAD simulation, the self-Sustained Oscillation is reproduced. The simulation results reveal the root cause of the self-Sustained Oscillation. Due to the snappy reverse recovery of superjunction MOSFET intrinsic diode, the steep slope of diode snap off current can generate high voltage across the common source inductance, which drives the gate–source voltage and turns on the high-side MOSFET. The unexpected MOSFET turn-on can, in return, enhance the steepness of the current slope when the diode snap off. This leads to a positive feedback process and self-Sustained Oscillation is generated. In the end, based on the theoretical analyses and experimental results, the necessary methods that can suppress the Oscillation are presented.
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Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode
IEEE Transactions on Electron Devices, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:Under certain conditions, self-Sustained Oscillation may occur during reverse recovery transient of high-side silicon carbide (SiC) MOSFET body diode in the half-bridge circuit. In this article, two distinct positive feedback mechanisms that can excite the self-Sustained Oscillation are identified based on the double-pulse test. To investigate the instability of the two types of Oscillation, a small signal ac model of the half-bridge circuit is proposed. With the model utilized, the parametric sensitivities of various parameters on the self-Sustained Oscillation are analyzed. The analyses reveal the oscillatory criteria, which provides effective guidelines to prevent the Oscillation. In the end, the Oscillation prevention guidelines are validated by the experiment. The experimental results demonstrate that the proposed theoretical treatment can provide reasonable guidelines to suppress the two types of self-Sustained Oscillation.
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Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode During Reverse Recovery Transient
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:In this paper, the self-Sustained Oscillation occurs on the reverse recovery transient of the superjunction MOSFET intrinsic diode is studied. Based on the double-pulse test, the characteristics of the self-Sustained Oscillation is identified. Utilizing the Senturus TCAD simulation, the superjunction MOSFET intrinsic diode's reverse recovery Oscillation behavior is reproduced. By analyzing the Oscillation waveforms, the positive feedback mechanism which excites the Oscillation is revealed at the end of the paper.
Peng Xue - One of the best experts on this subject based on the ideXlab platform.
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self Sustained turn off Oscillation of sic mosfets origin instability analysis and prevention
Energies, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:This paper presents a comprehensive investigation on the self-Sustained Oscillation of silicon carbide (SiC) MOSFETs. At first, based on the double pulse switching test, it is identified that the self-Sustained Oscillation of SiC MOSFETs can be triggered by two distinct test conditions. To investigate the oscillatory criteria of the two types of self-Sustained Oscillation, a small-signal ac model is introduced to obtain the transfer function of the oscillatory system. The instability of the Oscillation is thereby determined by the two conjugate pole pairs of the transfer function. By analyzing the damping ratios of the two pole pairs, the parametric sensitivity of various circuit and device’s parameters on the two types of self-Sustained Oscillation are obtained. The analyses reveal the oscillatory criteria of the self-Sustained Oscillation for SiC MOSFETs. Based on the oscillatory criteria, necessary methods are proposed to prevent the Oscillation. The proposed Oscillation suppression methods are validated by the experiment at the end of the paper.
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Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode
IEEE Transactions on Electron Devices, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:This paper presents the analyses on the self-Sustained Oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-Sustained Oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse switching test. The test results show that the self-Sustained Oscillation with significant self-amplification phenomenon can be triggered during the reverse recovery transient of superjunction MOSFET intrinsic diode. Based on the Sentaurus TCAD simulation, the self-Sustained Oscillation is reproduced. The simulation results reveal the root cause of the self-Sustained Oscillation. Due to the snappy reverse recovery of superjunction MOSFET intrinsic diode, the steep slope of diode snap off current can generate high voltage across the common source inductance, which drives the gate–source voltage and turns on the high-side MOSFET. The unexpected MOSFET turn-on can, in return, enhance the steepness of the current slope when the diode snap off. This leads to a positive feedback process and self-Sustained Oscillation is generated. In the end, based on the theoretical analyses and experimental results, the necessary methods that can suppress the Oscillation are presented.
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Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode
IEEE Transactions on Electron Devices, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:Under certain conditions, self-Sustained Oscillation may occur during reverse recovery transient of high-side silicon carbide (SiC) MOSFET body diode in the half-bridge circuit. In this article, two distinct positive feedback mechanisms that can excite the self-Sustained Oscillation are identified based on the double-pulse test. To investigate the instability of the two types of Oscillation, a small signal ac model of the half-bridge circuit is proposed. With the model utilized, the parametric sensitivities of various parameters on the self-Sustained Oscillation are analyzed. The analyses reveal the oscillatory criteria, which provides effective guidelines to prevent the Oscillation. In the end, the Oscillation prevention guidelines are validated by the experiment. The experimental results demonstrate that the proposed theoretical treatment can provide reasonable guidelines to suppress the two types of self-Sustained Oscillation.
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Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode During Reverse Recovery Transient
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:In this paper, the self-Sustained Oscillation occurs on the reverse recovery transient of the superjunction MOSFET intrinsic diode is studied. Based on the double-pulse test, the characteristics of the self-Sustained Oscillation is identified. Utilizing the Senturus TCAD simulation, the superjunction MOSFET intrinsic diode's reverse recovery Oscillation behavior is reproduced. By analyzing the Oscillation waveforms, the positive feedback mechanism which excites the Oscillation is revealed at the end of the paper.
Praveen Jain - One of the best experts on this subject based on the ideXlab platform.
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instability analysis and Oscillation suppression of enhancement mode gan devices in half bridge circuits
IEEE Transactions on Power Electronics, 2018Co-Authors: Kangping Wang, Laili Wang, Xu Yang, Praveen JainAbstract:This paper analyzes the problem of instability in enhancement-mode gallium nitride (GaN) transistors based half-bridge circuits. The instability may cause Sustained Oscillation, resulting in overvoltage, excessive electromagnetic interference (EMI), and even device breakdown. GaN devices operate in the saturation region when they conduct reversely during the dead time. Under the influence of parasitic parameters, the GaN-based half-bridge circuit exhibits positive feedback under certain conditions, thus, resulting in Sustained Oscillation. A small-signal model is proposed to study this positive feedback phenomenon. Like the second-order under-damped system, damping ratio is defined to determine the system's stability. Based on the model, the influence of circuit parameters on instability is investigated and guidelines to suppress the Oscillation are given. Reducing the common-source inductance, increasing the gate resistance of the inactive switch or connecting a diode in parallel to the inactive switch are some effective ways to suppress the Oscillation. Finally, the analyses are verified by both simulation and experiment.
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a self Sustained Oscillation controlled three level ac dc single stage converter
Applied Power Electronics Conference, 2012Co-Authors: Majid Pahlevaninezhad, Praveen Jain, Pritam Das, Alireza Bakhshai, Gerry MoschopoulosAbstract:An improved three level single-stage resonant ac-dc single stage converter suitable for computer server and telecom applications is proposed in this paper. The proposed converter can operate with universal input ac voltage (85Vrms∼265Vrms) and its output voltage is 12V. It can operate with natural ZVS for a load range as wide as 1.5kW down to 150W while maintaining a maximum switch voltage stress that is much less than 450V. The input current harmonic contents of the proposed converter are in compliance with IEC-6100–3–2 Class-A limits for all operating conditions. A novel self-Sustained Oscillation control technique is applied to control the output voltage of the proposed converter instead of conventional variable frequency control.
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series parallel resonant converter in self Sustained Oscillation mode with the high frequency transformer leakage inductance effect analysis modeling and design
IEEE Transactions on Industrial Electronics, 2007Co-Authors: M Z Youssef, Praveen JainAbstract:An accurate modeling of the series-parallel resonant converter operating in self-Sustained Oscillation mode including the overlap effects of the output rectifying stage due to the leakage inductance of the transformer is presented. This paper presents a systematic procedure to study the aforementioned effects on the converter dynamic and steady-state performance. Such information is critical in designing isolated high-frequency resonance-based voltage-regulator modules for powering future subvoltage very large scale integration circuits such as microprocessors. The extended describing function technique is used to extract the steady-state characteristics in order to get an optimum converter design. Averaging state-space techniques are employed to derive a small-signal model that can describe the converter dynamics accurately. Analytical and simulation results are given. Finally, a 1-kW experimental prototype is built to verify the validity of the proposed work
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design and performance of a resonant llc 48v voltage regulator module with a self Sustained Oscillation controller
Applied Power Electronics Conference, 2007Co-Authors: M Z Youssef, Praveen JainAbstract:This paper presents the performance and design of a new 48V/1.5V Voltage Regulator Module (VRM) for the stand-alone high-end servers, and notebook computer applications. The proposed VRM is based on the LLC-type resonant converter as it possesses much lower component stresses compared with the conventional series and series-parallel resonant topologies. Self-Sustained Oscillation control (SSOC) operation is used to achieve voltage regulation and high efficiency for a wide range of load currents. It is a new current mode controller for resonant converter, hence offers lower power component ratings than with the conventional variable frequency (VF) controller and a very fast transient response. It allows a minimum power factor angle and consequently a smaller primary current to reduce conduction losses, leading to a better working efficiency. Analytical, simulation and experimental results of a 48V/1.5V 30W prototype are presented to offer the proof of concept.
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design and experimentation of a novel variable frequency 48v voltage regulator module with self Sustained Oscillation controller
Applied Power Electronics Conference, 2006Co-Authors: M Z Youssef, Praveen JainAbstract:This paper presents the performance and design of a variable frequency 30W, 48V/1.5V voltage regulator module (VRM) for stand-alone high-end servers, laptop computers, and flash memory applications. Self-Sustained Oscillation control (SSOC) operation is used to achieve voltage regulation and high efficiency for a wide range of load currents. It is a current mode controller for resonant converters, hence offers lower power component ratings than the conventional variable frequency controller and very fast transient response as well. Analytical, simulation and experimental results are presented to offer the proof of concept.
Giovanni Breglio - One of the best experts on this subject based on the ideXlab platform.
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self Sustained turn off Oscillation of sic mosfets origin instability analysis and prevention
Energies, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:This paper presents a comprehensive investigation on the self-Sustained Oscillation of silicon carbide (SiC) MOSFETs. At first, based on the double pulse switching test, it is identified that the self-Sustained Oscillation of SiC MOSFETs can be triggered by two distinct test conditions. To investigate the oscillatory criteria of the two types of self-Sustained Oscillation, a small-signal ac model is introduced to obtain the transfer function of the oscillatory system. The instability of the Oscillation is thereby determined by the two conjugate pole pairs of the transfer function. By analyzing the damping ratios of the two pole pairs, the parametric sensitivity of various circuit and device’s parameters on the two types of self-Sustained Oscillation are obtained. The analyses reveal the oscillatory criteria of the self-Sustained Oscillation for SiC MOSFETs. Based on the oscillatory criteria, necessary methods are proposed to prevent the Oscillation. The proposed Oscillation suppression methods are validated by the experiment at the end of the paper.
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Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode
IEEE Transactions on Electron Devices, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:This paper presents the analyses on the self-Sustained Oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-Sustained Oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse switching test. The test results show that the self-Sustained Oscillation with significant self-amplification phenomenon can be triggered during the reverse recovery transient of superjunction MOSFET intrinsic diode. Based on the Sentaurus TCAD simulation, the self-Sustained Oscillation is reproduced. The simulation results reveal the root cause of the self-Sustained Oscillation. Due to the snappy reverse recovery of superjunction MOSFET intrinsic diode, the steep slope of diode snap off current can generate high voltage across the common source inductance, which drives the gate–source voltage and turns on the high-side MOSFET. The unexpected MOSFET turn-on can, in return, enhance the steepness of the current slope when the diode snap off. This leads to a positive feedback process and self-Sustained Oscillation is generated. In the end, based on the theoretical analyses and experimental results, the necessary methods that can suppress the Oscillation are presented.
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Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode
IEEE Transactions on Electron Devices, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:Under certain conditions, self-Sustained Oscillation may occur during reverse recovery transient of high-side silicon carbide (SiC) MOSFET body diode in the half-bridge circuit. In this article, two distinct positive feedback mechanisms that can excite the self-Sustained Oscillation are identified based on the double-pulse test. To investigate the instability of the two types of Oscillation, a small signal ac model of the half-bridge circuit is proposed. With the model utilized, the parametric sensitivities of various parameters on the self-Sustained Oscillation are analyzed. The analyses reveal the oscillatory criteria, which provides effective guidelines to prevent the Oscillation. In the end, the Oscillation prevention guidelines are validated by the experiment. The experimental results demonstrate that the proposed theoretical treatment can provide reasonable guidelines to suppress the two types of self-Sustained Oscillation.
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Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode During Reverse Recovery Transient
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:In this paper, the self-Sustained Oscillation occurs on the reverse recovery transient of the superjunction MOSFET intrinsic diode is studied. Based on the double-pulse test, the characteristics of the self-Sustained Oscillation is identified. Utilizing the Senturus TCAD simulation, the superjunction MOSFET intrinsic diode's reverse recovery Oscillation behavior is reproduced. By analyzing the Oscillation waveforms, the positive feedback mechanism which excites the Oscillation is revealed at the end of the paper.
Michele Riccio - One of the best experts on this subject based on the ideXlab platform.
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self Sustained turn off Oscillation of sic mosfets origin instability analysis and prevention
Energies, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:This paper presents a comprehensive investigation on the self-Sustained Oscillation of silicon carbide (SiC) MOSFETs. At first, based on the double pulse switching test, it is identified that the self-Sustained Oscillation of SiC MOSFETs can be triggered by two distinct test conditions. To investigate the oscillatory criteria of the two types of self-Sustained Oscillation, a small-signal ac model is introduced to obtain the transfer function of the oscillatory system. The instability of the Oscillation is thereby determined by the two conjugate pole pairs of the transfer function. By analyzing the damping ratios of the two pole pairs, the parametric sensitivity of various circuit and device’s parameters on the two types of self-Sustained Oscillation are obtained. The analyses reveal the oscillatory criteria of the self-Sustained Oscillation for SiC MOSFETs. Based on the oscillatory criteria, necessary methods are proposed to prevent the Oscillation. The proposed Oscillation suppression methods are validated by the experiment at the end of the paper.
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Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode
IEEE Transactions on Electron Devices, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:This paper presents the analyses on the self-Sustained Oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-Sustained Oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse switching test. The test results show that the self-Sustained Oscillation with significant self-amplification phenomenon can be triggered during the reverse recovery transient of superjunction MOSFET intrinsic diode. Based on the Sentaurus TCAD simulation, the self-Sustained Oscillation is reproduced. The simulation results reveal the root cause of the self-Sustained Oscillation. Due to the snappy reverse recovery of superjunction MOSFET intrinsic diode, the steep slope of diode snap off current can generate high voltage across the common source inductance, which drives the gate–source voltage and turns on the high-side MOSFET. The unexpected MOSFET turn-on can, in return, enhance the steepness of the current slope when the diode snap off. This leads to a positive feedback process and self-Sustained Oscillation is generated. In the end, based on the theoretical analyses and experimental results, the necessary methods that can suppress the Oscillation are presented.
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Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode
IEEE Transactions on Electron Devices, 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:Under certain conditions, self-Sustained Oscillation may occur during reverse recovery transient of high-side silicon carbide (SiC) MOSFET body diode in the half-bridge circuit. In this article, two distinct positive feedback mechanisms that can excite the self-Sustained Oscillation are identified based on the double-pulse test. To investigate the instability of the two types of Oscillation, a small signal ac model of the half-bridge circuit is proposed. With the model utilized, the parametric sensitivities of various parameters on the self-Sustained Oscillation are analyzed. The analyses reveal the oscillatory criteria, which provides effective guidelines to prevent the Oscillation. In the end, the Oscillation prevention guidelines are validated by the experiment. The experimental results demonstrate that the proposed theoretical treatment can provide reasonable guidelines to suppress the two types of self-Sustained Oscillation.
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Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode During Reverse Recovery Transient
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019Co-Authors: Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea IraceAbstract:In this paper, the self-Sustained Oscillation occurs on the reverse recovery transient of the superjunction MOSFET intrinsic diode is studied. Based on the double-pulse test, the characteristics of the self-Sustained Oscillation is identified. Utilizing the Senturus TCAD simulation, the superjunction MOSFET intrinsic diode's reverse recovery Oscillation behavior is reproduced. By analyzing the Oscillation waveforms, the positive feedback mechanism which excites the Oscillation is revealed at the end of the paper.
