The Experts below are selected from a list of 111 Experts worldwide ranked by ideXlab platform

D. Hahn - One of the best experts on this subject based on the ideXlab platform.

  • A new photoreceiver concept using InGaAs-Transferred-Electron Devices
    IEEE Journal of Quantum Electronics, 1995
    Co-Authors: D. Hahn, G. Zwinge, L. Malacky, Andreas Schlachetzki
    Abstract:

    A new optical receiver is proposed incorporating an InGaAs-Transferred-Electron device with Schottky gate-electrode (STED) and an InGaAs-metal-semiconductor-metal detector (MSM). This photoreceiver is applicable to the detection of digital, intensity modulated signals and can be integrated on an InP-substrate. The monolithically integrated circuit has been fabricated. Both the integrated STED and the MSM detector has been characterized. From the measurements the receiver can be expected to offer high current gain and inherent pulse shaping. Based on experiments the sensitivity and the gain of the photoreceiver as a function of the bit-rate has been calculated. >

  • optically triggered in sub 0 53 ga sub 0 47 as Transferred Electron Devices for repeater applications
    IEEE Transactions on Electron Devices, 1993
    Co-Authors: D. Hahn, L. Malacky, K Hansen, A Schlachetzhi
    Abstract:

    The generation of current pulses in In/sub 0.53/Ga/sub 0.47/As-transfer Devices by short optical pulses is demonstrated. The triggering conditions for the generation of single domains are determined with respect to optical peak power, doping concentration, and location of irradiation. The sensitivity and gain of a proposed repeater circuit are calculated. >

  • mesfet like Transferred Electron Devices in in sub 0 53 ga sub 0 47 as
    Electronics Letters, 1993
    Co-Authors: D. Hahn, G. Zwinge, A. Schlachetzki
    Abstract:

    In/sub 0.53/Ga/sub 0.47/As Transferred-Electron Devices with Schottky-gate electrodes were fabricated. These Devices can be used in optoElectronic circuits on InP or as millimetre wave oscillators. For the realisation of the gate electrode several enhancement layers were tested to increase the Schottky barrier height on In/sub 0.53/Ga/sub 0.47/As. The triggering of single dipole domains in the device was demonstrated.

  • MESFET-like Transferred-Electron Devices in In/sub 0.53/Ga/sub 0.47/As
    Electronics Letters, 1993
    Co-Authors: D. Hahn, G. Zwinge, A. Schlachetzki
    Abstract:

    In/sub 0.53/Ga/sub 0.47/As Transferred-Electron Devices with Schottky-gate electrodes were fabricated. These Devices can be used in optoElectronic circuits on InP or as millimetre wave oscillators. For the realisation of the gate electrode several enhancement layers were tested to increase the Schottky barrier height on In/sub 0.53/Ga/sub 0.47/As. The triggering of single dipole domains in the device was demonstrated.

  • Carrier-concentration dependence of velocity-field characteristics in ln_0.53Ga_0.47 as
    Journal of Electronic Materials, 1992
    Co-Authors: D. Hahn, A. Schlachetzki
    Abstract:

    The doping dependence of the velocity-field characteristic in InGaAs has been investigated by an analysis of measurements with Transferred-Electron Devices. The Electron peak velocity has been determined directly as a function of Electron concentration and low-field mobility. The carrier-concentration dependence of the velocity-field characteristic has been deduced by comparing experimental and theoretical transient device behaviour. The experimental results support a theoretical approach for the velocity-field characteristic which has been proposed recently.

Melvin P. Shaw - One of the best experts on this subject based on the ideXlab platform.

  • study of submicron inp Transferred Electron Devices
    Journal of Applied Physics, 1993
    Co-Authors: J. Czekaj, Melvin P. Shaw
    Abstract:

    We have performed an experimental and numerical investigation of near‐micron, and a numerical investigation of submicron sized InP Transferred Electron Devices (TEDs) having alloyed metal cathode ‘‘current‐limiting’’ contacts. A drift and diffusion analysis utilizing a modified Schottky barrier for the cathode contact was used to model the dc characteristics of near‐micron structures, while a Boltzmann transport equation moments analysis with a cathode mobility model was implemented in order to simulate the ac and dc results in general. Our theoretical study emphasized the length effect for submicron structures. A generalized ‘‘different areas rule’’ for short Devices was compared with the results of our numerical analysis. Submicron InP TEDs were studied and simulated numerically in the near millimeter wave region (100–250 GHz). The static velocity‐field, v(E), characteristics showed a large deviation from long device behavior (≳1.0 μm) as the device length decreased into the submicron region. The upper ...

  • Monte Carlo Simulations for Submicron InP Two-Terminal Transferred Electron Devices
    Computational Electronics, 1991
    Co-Authors: V. V. Mitin, Melvin P. Shaw, V. M. Ivastchenko
    Abstract:

    We performed Monte Carlo simulations taking into account all scattering mechanisms in InP and the presence of an inhomogeneous electric field. We report that: 1) the drifted Maxwellian distribution used in many publications is reliable only for long samples; 2) in addition to the boundary conditions at the cathode, the anode boundary condition becomes important in short Devices; 3) Negative Differential Energy (NDE) occurs in the Negative Differential Conductivity (NDC) regime in InP (i.e. cooling of the Electron gas by the electric field take place) ; 4) the critical electric field for NDE is somewhat higher than the critical electric field for NDC.

Andreas Schlachetzki - One of the best experts on this subject based on the ideXlab platform.

  • A new photoreceiver concept using InGaAs-Transferred-Electron Devices
    IEEE Journal of Quantum Electronics, 1995
    Co-Authors: D. Hahn, G. Zwinge, L. Malacky, Andreas Schlachetzki
    Abstract:

    A new optical receiver is proposed incorporating an InGaAs-Transferred-Electron device with Schottky gate-electrode (STED) and an InGaAs-metal-semiconductor-metal detector (MSM). This photoreceiver is applicable to the detection of digital, intensity modulated signals and can be integrated on an InP-substrate. The monolithically integrated circuit has been fabricated. Both the integrated STED and the MSM detector has been characterized. From the measurements the receiver can be expected to offer high current gain and inherent pulse shaping. Based on experiments the sensitivity and the gain of the photoreceiver as a function of the bit-rate has been calculated. >

  • Carrier-concentration dependence of velocity-field characteristics in In 0.53 Ga 0.47 As
    Journal of Electronic Materials, 1992
    Co-Authors: D. Hahn, Andreas Schlachetzki
    Abstract:

    The doping dependence of the velocity-field characteristic in InGaAs has been investigated by an analysis of measurements with Transferred-Electron Devices. The Electron peak velocity has been determined directly as a function of Electron concentration and low-field mobility. The carrier-concentration dependence of the velocity-field characteristic has been deduced by comparing experimental and theoretical transient device behaviour. The experimental results support a theoretical approach for the velocity-field characteristic which has been proposed recently.

J. Czekaj - One of the best experts on this subject based on the ideXlab platform.

  • study of submicron inp Transferred Electron Devices
    Journal of Applied Physics, 1993
    Co-Authors: J. Czekaj, Melvin P. Shaw
    Abstract:

    We have performed an experimental and numerical investigation of near‐micron, and a numerical investigation of submicron sized InP Transferred Electron Devices (TEDs) having alloyed metal cathode ‘‘current‐limiting’’ contacts. A drift and diffusion analysis utilizing a modified Schottky barrier for the cathode contact was used to model the dc characteristics of near‐micron structures, while a Boltzmann transport equation moments analysis with a cathode mobility model was implemented in order to simulate the ac and dc results in general. Our theoretical study emphasized the length effect for submicron structures. A generalized ‘‘different areas rule’’ for short Devices was compared with the results of our numerical analysis. Submicron InP TEDs were studied and simulated numerically in the near millimeter wave region (100–250 GHz). The static velocity‐field, v(E), characteristics showed a large deviation from long device behavior (≳1.0 μm) as the device length decreased into the submicron region. The upper ...

A Schlachetzhi - One of the best experts on this subject based on the ideXlab platform.