Tunnel Diode

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Xi Wang - One of the best experts on this subject based on the ideXlab platform.

  • compact model for Tunnel Diode body contact soi n mosfets
    IEEE Transactions on Electron Devices, 2019
    Co-Authors: Yongwei Chang, Jiexin Luo, Jing Chen, Zhan Chai, Shuo Wang, Yemin Dong, Xi Wang
    Abstract:

    A compact model for Tunnel Diode body contact (TDBC) silicon-on-insulator (SOI) n-MOSFETs was developed in this paper. The compact model is implemented in Verilog-A to simulate the dc and radio frequency (RF) performance of a TDBC SOI MOSFET. The TDBC SOI MOSFETs are successfully fabricated and are used to measure important transistor electrical parameters. The investigation results reveal that TDBC structure suppresses floating body effects (FBEs) as well as T-gate body (TB) contact structure and shows significant improvement in RF performance without introducing additional parasitic capacitances compared with the TB device. Kink phenomena and an abnormal subthreshold swing originating from FBEs are sufficiently suppressed. It is demonstrated that the TDBC SOI MOSFETs provide a promising concept for digital, analog, and RF applications. The outputs from this analytic model are in fair agreement with the TDBC experimental data, which validates the effectiveness and robustness of the compact model for TDBC SOI technology. Finally, good accuracy ensures that the proposed model is applicable for the implementation in circuit simulation tools.

  • total dose effects in Tunnel Diode body contact soi n mosfets
    IEEE Transactions on Nuclear Science, 2014
    Co-Authors: Jiexin Luo, Jing Chen, Zhan Chai, Yan Yang, En Xia Zhang, D M Fleetwood, Xi Wang
    Abstract:

    Tunnel-Diode Body-Contact (TDBC) SOI MOSFETs utilize a shallow source and a deep drain to eliminate total-ionizing-dose induced back-channel leakage and to suppress floating body effects. In contrast, significant leakage current is observed in T-gate Body-Contact (TB) SOI nMOSFETs, as a result of trapped charge in the buried oxide. A subthreshold hump is observed in TDBC SOI nMOSFETs after irradiation. The charge trapped at the shallow trench isolation (STI) corner is the major reason for the post-irradiation hump in the current-voltage characteristics. Pocket p + implantation reduces the size of the subthreshold hump in short-channel TDBC devices.

  • a Tunnel Diode body contact structure for high performance soi mosfets
    IEEE Transactions on Electron Devices, 2012
    Co-Authors: Jiexin Luo, Jing Chen, Zhan Chai, Jianhua Zhou, Yaojun Dong, Wei Liu, Chao Qiu, Xi Wang
    Abstract:

    A Tunnel Diode body contact (TDBC) silicon-on-insulator (SOI) MOSFET structure without floating-body effects (FBEs) is proposed and successfully demonstrated. The key idea of the proposed structure is that a Tunnel Diode is embedded in the source region, so that the accumulated carriers can be released through Tunneling. In an n-MOSFET, a heavily doped p+ layer is introduced beneath the n+ source region. The simulated and measured results show the suppressed FBE, as expected. Other phenomena that originate from the FBEs, such as the kink, linear kink effect, abnormal subthreshold swing, and small drain-tosource breakdown voltage in the properties, were also sufficiently suppressed. In addition, it should be noted that the proposed SOI MOSFETs are fully laid out and process compatible with SOI CMOS. Hysteresis effects disappear in TDBC SOI MOSFETs, which makes them attractive for digital applications. On the other hand, in analog applications, TDBC SOI MOSFETs are shown to hold the advantage over floating-body SOI MOSFETs due to their higher Gm/ID ratio. TDBC SOI MOSFETs can be considered as one of the promising candidates for digital and analog devices.

  • a Tunnel Diode body contact structure to suppress the floating body effect in partially depleted soi mosfets
    IEEE Electron Device Letters, 2011
    Co-Authors: Jing Chen, Jiexin Luo, Zhan Chai, Yaojun Dong, Xi Wang
    Abstract:

    A novel SOI MOSFET structure to suppress the floating-body effect (FBE) and the short-channel effects is proposed and successfully demonstrated. In the new structure, a Tunnel Diode body contact is embedded in the source region, which can effectively release the accumulated body carriers. In an nMOSFET, a heavily doped p+ layer is introduced beneath the n+ source region so that the body and the source are effectively connected through Tunneling. The fabricated device shows the suppressed FBE and lower DIBL. The new structure does not enlarge the device size and is fully compatible with SOI CMOS technology.

Jiexin Luo - One of the best experts on this subject based on the ideXlab platform.

  • compact model for Tunnel Diode body contact soi n mosfets
    IEEE Transactions on Electron Devices, 2019
    Co-Authors: Yongwei Chang, Jiexin Luo, Jing Chen, Zhan Chai, Shuo Wang, Yemin Dong, Xi Wang
    Abstract:

    A compact model for Tunnel Diode body contact (TDBC) silicon-on-insulator (SOI) n-MOSFETs was developed in this paper. The compact model is implemented in Verilog-A to simulate the dc and radio frequency (RF) performance of a TDBC SOI MOSFET. The TDBC SOI MOSFETs are successfully fabricated and are used to measure important transistor electrical parameters. The investigation results reveal that TDBC structure suppresses floating body effects (FBEs) as well as T-gate body (TB) contact structure and shows significant improvement in RF performance without introducing additional parasitic capacitances compared with the TB device. Kink phenomena and an abnormal subthreshold swing originating from FBEs are sufficiently suppressed. It is demonstrated that the TDBC SOI MOSFETs provide a promising concept for digital, analog, and RF applications. The outputs from this analytic model are in fair agreement with the TDBC experimental data, which validates the effectiveness and robustness of the compact model for TDBC SOI technology. Finally, good accuracy ensures that the proposed model is applicable for the implementation in circuit simulation tools.

  • improved single event transient hardness in Tunnel Diode body contact soi nmos
    IEEE Transactions on Nuclear Science, 2017
    Co-Authors: Jiexin Luo, Jing Chen, Zhan Chai, En Xia Zhang, D M Fleetwood
    Abstract:

    Single-event transient (SET) responses are compared for floating-body contact, T-gate body-contact (TB), and Tunnel-Diode body-contact (TDBC) silicon-on-insulator (SOI) MOSFETs. The influence of three body-contact schemes on SET sensitivity is examined via irradiations as functions of position, bias voltage, and device size. The mechanisms of SET in SOI devices are discussed. Although both TB and TDBC schemes suppress floating body effects (FBEs), the TDBC scheme has superior SET hardness because it effectively eliminates charge enhancement due to bipolar amplification originating from FBEs. Thus, TDBC-structure SOI devices can lead to improved single-event upset hardness in static random access memory cells.

  • total dose effects in Tunnel Diode body contact soi n mosfets
    IEEE Transactions on Nuclear Science, 2014
    Co-Authors: Jiexin Luo, Jing Chen, Zhan Chai, Yan Yang, En Xia Zhang, D M Fleetwood, Xi Wang
    Abstract:

    Tunnel-Diode Body-Contact (TDBC) SOI MOSFETs utilize a shallow source and a deep drain to eliminate total-ionizing-dose induced back-channel leakage and to suppress floating body effects. In contrast, significant leakage current is observed in T-gate Body-Contact (TB) SOI nMOSFETs, as a result of trapped charge in the buried oxide. A subthreshold hump is observed in TDBC SOI nMOSFETs after irradiation. The charge trapped at the shallow trench isolation (STI) corner is the major reason for the post-irradiation hump in the current-voltage characteristics. Pocket p + implantation reduces the size of the subthreshold hump in short-channel TDBC devices.

  • a Tunnel Diode body contact structure for high performance soi mosfets
    IEEE Transactions on Electron Devices, 2012
    Co-Authors: Jiexin Luo, Jing Chen, Zhan Chai, Jianhua Zhou, Yaojun Dong, Wei Liu, Chao Qiu, Xi Wang
    Abstract:

    A Tunnel Diode body contact (TDBC) silicon-on-insulator (SOI) MOSFET structure without floating-body effects (FBEs) is proposed and successfully demonstrated. The key idea of the proposed structure is that a Tunnel Diode is embedded in the source region, so that the accumulated carriers can be released through Tunneling. In an n-MOSFET, a heavily doped p+ layer is introduced beneath the n+ source region. The simulated and measured results show the suppressed FBE, as expected. Other phenomena that originate from the FBEs, such as the kink, linear kink effect, abnormal subthreshold swing, and small drain-tosource breakdown voltage in the properties, were also sufficiently suppressed. In addition, it should be noted that the proposed SOI MOSFETs are fully laid out and process compatible with SOI CMOS. Hysteresis effects disappear in TDBC SOI MOSFETs, which makes them attractive for digital applications. On the other hand, in analog applications, TDBC SOI MOSFETs are shown to hold the advantage over floating-body SOI MOSFETs due to their higher Gm/ID ratio. TDBC SOI MOSFETs can be considered as one of the promising candidates for digital and analog devices.

  • a Tunnel Diode body contact structure to suppress the floating body effect in partially depleted soi mosfets
    IEEE Electron Device Letters, 2011
    Co-Authors: Jing Chen, Jiexin Luo, Zhan Chai, Yaojun Dong, Xi Wang
    Abstract:

    A novel SOI MOSFET structure to suppress the floating-body effect (FBE) and the short-channel effects is proposed and successfully demonstrated. In the new structure, a Tunnel Diode body contact is embedded in the source region, which can effectively release the accumulated body carriers. In an nMOSFET, a heavily doped p+ layer is introduced beneath the n+ source region so that the body and the source are effectively connected through Tunneling. The fabricated device shows the suppressed FBE and lower DIBL. The new structure does not enlarge the device size and is fully compatible with SOI CMOS technology.

Jing Chen - One of the best experts on this subject based on the ideXlab platform.

  • compact model for Tunnel Diode body contact soi n mosfets
    IEEE Transactions on Electron Devices, 2019
    Co-Authors: Yongwei Chang, Jiexin Luo, Jing Chen, Zhan Chai, Shuo Wang, Yemin Dong, Xi Wang
    Abstract:

    A compact model for Tunnel Diode body contact (TDBC) silicon-on-insulator (SOI) n-MOSFETs was developed in this paper. The compact model is implemented in Verilog-A to simulate the dc and radio frequency (RF) performance of a TDBC SOI MOSFET. The TDBC SOI MOSFETs are successfully fabricated and are used to measure important transistor electrical parameters. The investigation results reveal that TDBC structure suppresses floating body effects (FBEs) as well as T-gate body (TB) contact structure and shows significant improvement in RF performance without introducing additional parasitic capacitances compared with the TB device. Kink phenomena and an abnormal subthreshold swing originating from FBEs are sufficiently suppressed. It is demonstrated that the TDBC SOI MOSFETs provide a promising concept for digital, analog, and RF applications. The outputs from this analytic model are in fair agreement with the TDBC experimental data, which validates the effectiveness and robustness of the compact model for TDBC SOI technology. Finally, good accuracy ensures that the proposed model is applicable for the implementation in circuit simulation tools.

  • improved single event transient hardness in Tunnel Diode body contact soi nmos
    IEEE Transactions on Nuclear Science, 2017
    Co-Authors: Jiexin Luo, Jing Chen, Zhan Chai, En Xia Zhang, D M Fleetwood
    Abstract:

    Single-event transient (SET) responses are compared for floating-body contact, T-gate body-contact (TB), and Tunnel-Diode body-contact (TDBC) silicon-on-insulator (SOI) MOSFETs. The influence of three body-contact schemes on SET sensitivity is examined via irradiations as functions of position, bias voltage, and device size. The mechanisms of SET in SOI devices are discussed. Although both TB and TDBC schemes suppress floating body effects (FBEs), the TDBC scheme has superior SET hardness because it effectively eliminates charge enhancement due to bipolar amplification originating from FBEs. Thus, TDBC-structure SOI devices can lead to improved single-event upset hardness in static random access memory cells.

  • total dose effects in Tunnel Diode body contact soi n mosfets
    IEEE Transactions on Nuclear Science, 2014
    Co-Authors: Jiexin Luo, Jing Chen, Zhan Chai, Yan Yang, En Xia Zhang, D M Fleetwood, Xi Wang
    Abstract:

    Tunnel-Diode Body-Contact (TDBC) SOI MOSFETs utilize a shallow source and a deep drain to eliminate total-ionizing-dose induced back-channel leakage and to suppress floating body effects. In contrast, significant leakage current is observed in T-gate Body-Contact (TB) SOI nMOSFETs, as a result of trapped charge in the buried oxide. A subthreshold hump is observed in TDBC SOI nMOSFETs after irradiation. The charge trapped at the shallow trench isolation (STI) corner is the major reason for the post-irradiation hump in the current-voltage characteristics. Pocket p + implantation reduces the size of the subthreshold hump in short-channel TDBC devices.

  • a Tunnel Diode body contact structure for high performance soi mosfets
    IEEE Transactions on Electron Devices, 2012
    Co-Authors: Jiexin Luo, Jing Chen, Zhan Chai, Jianhua Zhou, Yaojun Dong, Wei Liu, Chao Qiu, Xi Wang
    Abstract:

    A Tunnel Diode body contact (TDBC) silicon-on-insulator (SOI) MOSFET structure without floating-body effects (FBEs) is proposed and successfully demonstrated. The key idea of the proposed structure is that a Tunnel Diode is embedded in the source region, so that the accumulated carriers can be released through Tunneling. In an n-MOSFET, a heavily doped p+ layer is introduced beneath the n+ source region. The simulated and measured results show the suppressed FBE, as expected. Other phenomena that originate from the FBEs, such as the kink, linear kink effect, abnormal subthreshold swing, and small drain-tosource breakdown voltage in the properties, were also sufficiently suppressed. In addition, it should be noted that the proposed SOI MOSFETs are fully laid out and process compatible with SOI CMOS. Hysteresis effects disappear in TDBC SOI MOSFETs, which makes them attractive for digital applications. On the other hand, in analog applications, TDBC SOI MOSFETs are shown to hold the advantage over floating-body SOI MOSFETs due to their higher Gm/ID ratio. TDBC SOI MOSFETs can be considered as one of the promising candidates for digital and analog devices.

  • a Tunnel Diode body contact structure to suppress the floating body effect in partially depleted soi mosfets
    IEEE Electron Device Letters, 2011
    Co-Authors: Jing Chen, Jiexin Luo, Zhan Chai, Yaojun Dong, Xi Wang
    Abstract:

    A novel SOI MOSFET structure to suppress the floating-body effect (FBE) and the short-channel effects is proposed and successfully demonstrated. In the new structure, a Tunnel Diode body contact is embedded in the source region, which can effectively release the accumulated body carriers. In an nMOSFET, a heavily doped p+ layer is introduced beneath the n+ source region so that the body and the source are effectively connected through Tunneling. The fabricated device shows the suppressed FBE and lower DIBL. The new structure does not enlarge the device size and is fully compatible with SOI CMOS technology.

Zhan Chai - One of the best experts on this subject based on the ideXlab platform.

  • compact model for Tunnel Diode body contact soi n mosfets
    IEEE Transactions on Electron Devices, 2019
    Co-Authors: Yongwei Chang, Jiexin Luo, Jing Chen, Zhan Chai, Shuo Wang, Yemin Dong, Xi Wang
    Abstract:

    A compact model for Tunnel Diode body contact (TDBC) silicon-on-insulator (SOI) n-MOSFETs was developed in this paper. The compact model is implemented in Verilog-A to simulate the dc and radio frequency (RF) performance of a TDBC SOI MOSFET. The TDBC SOI MOSFETs are successfully fabricated and are used to measure important transistor electrical parameters. The investigation results reveal that TDBC structure suppresses floating body effects (FBEs) as well as T-gate body (TB) contact structure and shows significant improvement in RF performance without introducing additional parasitic capacitances compared with the TB device. Kink phenomena and an abnormal subthreshold swing originating from FBEs are sufficiently suppressed. It is demonstrated that the TDBC SOI MOSFETs provide a promising concept for digital, analog, and RF applications. The outputs from this analytic model are in fair agreement with the TDBC experimental data, which validates the effectiveness and robustness of the compact model for TDBC SOI technology. Finally, good accuracy ensures that the proposed model is applicable for the implementation in circuit simulation tools.

  • improved single event transient hardness in Tunnel Diode body contact soi nmos
    IEEE Transactions on Nuclear Science, 2017
    Co-Authors: Jiexin Luo, Jing Chen, Zhan Chai, En Xia Zhang, D M Fleetwood
    Abstract:

    Single-event transient (SET) responses are compared for floating-body contact, T-gate body-contact (TB), and Tunnel-Diode body-contact (TDBC) silicon-on-insulator (SOI) MOSFETs. The influence of three body-contact schemes on SET sensitivity is examined via irradiations as functions of position, bias voltage, and device size. The mechanisms of SET in SOI devices are discussed. Although both TB and TDBC schemes suppress floating body effects (FBEs), the TDBC scheme has superior SET hardness because it effectively eliminates charge enhancement due to bipolar amplification originating from FBEs. Thus, TDBC-structure SOI devices can lead to improved single-event upset hardness in static random access memory cells.

  • total dose effects in Tunnel Diode body contact soi n mosfets
    IEEE Transactions on Nuclear Science, 2014
    Co-Authors: Jiexin Luo, Jing Chen, Zhan Chai, Yan Yang, En Xia Zhang, D M Fleetwood, Xi Wang
    Abstract:

    Tunnel-Diode Body-Contact (TDBC) SOI MOSFETs utilize a shallow source and a deep drain to eliminate total-ionizing-dose induced back-channel leakage and to suppress floating body effects. In contrast, significant leakage current is observed in T-gate Body-Contact (TB) SOI nMOSFETs, as a result of trapped charge in the buried oxide. A subthreshold hump is observed in TDBC SOI nMOSFETs after irradiation. The charge trapped at the shallow trench isolation (STI) corner is the major reason for the post-irradiation hump in the current-voltage characteristics. Pocket p + implantation reduces the size of the subthreshold hump in short-channel TDBC devices.

  • a Tunnel Diode body contact structure for high performance soi mosfets
    IEEE Transactions on Electron Devices, 2012
    Co-Authors: Jiexin Luo, Jing Chen, Zhan Chai, Jianhua Zhou, Yaojun Dong, Wei Liu, Chao Qiu, Xi Wang
    Abstract:

    A Tunnel Diode body contact (TDBC) silicon-on-insulator (SOI) MOSFET structure without floating-body effects (FBEs) is proposed and successfully demonstrated. The key idea of the proposed structure is that a Tunnel Diode is embedded in the source region, so that the accumulated carriers can be released through Tunneling. In an n-MOSFET, a heavily doped p+ layer is introduced beneath the n+ source region. The simulated and measured results show the suppressed FBE, as expected. Other phenomena that originate from the FBEs, such as the kink, linear kink effect, abnormal subthreshold swing, and small drain-tosource breakdown voltage in the properties, were also sufficiently suppressed. In addition, it should be noted that the proposed SOI MOSFETs are fully laid out and process compatible with SOI CMOS. Hysteresis effects disappear in TDBC SOI MOSFETs, which makes them attractive for digital applications. On the other hand, in analog applications, TDBC SOI MOSFETs are shown to hold the advantage over floating-body SOI MOSFETs due to their higher Gm/ID ratio. TDBC SOI MOSFETs can be considered as one of the promising candidates for digital and analog devices.

  • a Tunnel Diode body contact structure to suppress the floating body effect in partially depleted soi mosfets
    IEEE Electron Device Letters, 2011
    Co-Authors: Jing Chen, Jiexin Luo, Zhan Chai, Yaojun Dong, Xi Wang
    Abstract:

    A novel SOI MOSFET structure to suppress the floating-body effect (FBE) and the short-channel effects is proposed and successfully demonstrated. In the new structure, a Tunnel Diode body contact is embedded in the source region, which can effectively release the accumulated body carriers. In an nMOSFET, a heavily doped p+ layer is introduced beneath the n+ source region so that the body and the source are effectively connected through Tunneling. The fabricated device shows the suppressed FBE and lower DIBL. The new structure does not enlarge the device size and is fully compatible with SOI CMOS technology.

R J Cava - One of the best experts on this subject based on the ideXlab platform.

  • hybrid high temperature superconductor semiconductor Tunnel Diode
    arXiv: Superconductivity, 2013
    Co-Authors: Alex Hayat, Parisa Zareapour, Shu Yang Frank Zhao, Achint Jain, Igor G Savelyev, Marina Blumin, Alina Yang, Harry E Ruda, Shuang Jia, R J Cava
    Abstract:

    We report the demonstration of hybrid high-Tc-superconductor-semiconductor Tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting Tunnel Diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+{\delta} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal material junction, and similar to spectra obtained in scanning Tunneling microscopy. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+{\delta} combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials and quantum technology applications.

  • hybrid high temperature superconductor semiconductor Tunnel Diode
    Physical Review X, 2012
    Co-Authors: Alex Hayat, Parisa Zareapour, Shu Yang Frank Zhao, Achint Jain, Igor G Savelyev, Marina Blumin, Alina Yang, Harry E Ruda, Shuang Jia, R J Cava
    Abstract:

    com-bined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity,similarly to spectra obtained in scanning-Tunneling microscopy, and is in good agreement withtheoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctionsare demonstrated using Bi

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