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Amorphous Oxide
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Hideo Hosono – One of the best experts on this subject based on the ideXlab platform.
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Electronic defects in Amorphous Oxide semiconductor and recent development
2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2020Co-Authors: Keisuke Ide, Hideo Hosono, Toshio KamiyaAbstract:Amorphous Oxide semiconductors (AOSs) represented by Amorphous In-Ga-Zn-O have been applied for state-of-the-art flat panel displays as thin-film transistor backplane since 2012. Understanding defects in AOS is critically important for controlling the instability of TFTs. It is found in the past decades that many AOS defects are related to oxygen and hydrogen impurities, though oxygen is the major constituent of AOS and hydrogen is not intentionally incorporated.
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Amorphous Oxide Semiconductor Thin-Film Transistors
Novel Structured Metallic and Inorganic Materials, 2019Co-Authors: Toshio Kamiya, Kenji Nomura, Keisuke Ide, Jungwhan Kim, Hidenori Hiramatsu, Hideya Kumomi, Hideo HosonoAbstract:Amorphous Oxide semiconductor (AOS) is now commercialized in many flat-panel displays. On the other hand, its electronic structures and defects are largely different from conventional covalent semiconductors such as Si. This chapter explains their origins and reviews the defects that have been known to date. Finally, we will discuss how to fabricate high-quality, stabile AOS.
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Transparent Amorphous Oxide semiconductors: Materials design, electronic structure, and device applications
2017 75th Annual Device Research Conference (DRC), 2017Co-Authors: Hideo HosonoAbstract:In 1995, I presented a materials design concept for transparent Amorphous Oxide semiconductors with a large electron mobility (TAOS) at the 16’h International conference on Amorphous semiconductors along with concrete example materials of TAOS and the paper was published in 1996 [1[. The basic concept of TAOS is that large electron mobility should be retained even in Amorphous materials if the conduction band minimum is mainly composed of spatially large spread of metal ns-orbitals.1 The validity of this design concept was demonstrated by analysis of electronic structure using photoemission experiments combined with calculations based on X-ray structural analysis[2].
Toshio Kamiya – One of the best experts on this subject based on the ideXlab platform.
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Electronic defects in Amorphous Oxide semiconductor and recent development
2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2020Co-Authors: Keisuke Ide, Hideo Hosono, Toshio KamiyaAbstract:Amorphous Oxide semiconductors (AOSs) represented by Amorphous In-Ga-Zn-O have been applied for state-of-the-art flat panel displays as thin-film transistor backplane since 2012. Understanding defects in AOS is critically important for controlling the instability of TFTs. It is found in the past decades that many AOS defects are related to oxygen and hydrogen impurities, though oxygen is the major constituent of AOS and hydrogen is not intentionally incorporated.
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Amorphous Oxide Semiconductor Thin-Film Transistors
Novel Structured Metallic and Inorganic Materials, 2019Co-Authors: Toshio Kamiya, Kenji Nomura, Keisuke Ide, Jungwhan Kim, Hidenori Hiramatsu, Hideya Kumomi, Hideo HosonoAbstract:Amorphous Oxide semiconductor (AOS) is now commercialized in many flat-panel displays. On the other hand, its electronic structures and defects are largely different from conventional covalent semiconductors such as Si. This chapter explains their origins and reviews the defects that have been known to date. Finally, we will discuss how to fabricate high-quality, stabile AOS.
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Ultrawide band gap Amorphous Oxide semiconductor, Ga–Zn–O
Thin Solid Films, 2016Co-Authors: Junghwan Kim, Hideo Hosono, Keisuke Ide, Hidenori Hiramatsu, Norihiko Miyokawa, Takumi Sekiya, Yoshitake Toda, Toshio KamiyaAbstract:Abstract We fabricated Amorphous Oxide semiconductor films, a-(Ga1–xZnx)Oy, at room temperature on glass, which have widely tunable band gaps (Eg) ranging from 3.47–4.12 eV. The highest electron Hall mobility ~ 7 cm2 V− 1 s− 1 was obtained for Eg = ~ 3.8 eV. Ultraviolet photoemission spectroscopy revealed that the increase in Eg with increasing the Ga content comes mostly from the deepening of the valence band maximum level while the conduction band minimum level remains almost unchanged. These characteristics are explained by their electronic structures. As these films can be fabricated at room temperature on plastic, this achievement extends the applications of flexible electronics to opto-electronic integrated circuits associated with deep ultraviolet region.
Kenji Nomura – One of the best experts on this subject based on the ideXlab platform.
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Amorphous Oxide Semiconductor Thin-Film Transistors
Novel Structured Metallic and Inorganic Materials, 2019Co-Authors: Toshio Kamiya, Kenji Nomura, Keisuke Ide, Jungwhan Kim, Hidenori Hiramatsu, Hideya Kumomi, Hideo HosonoAbstract:Amorphous Oxide semiconductor (AOS) is now commercialized in many flat-panel displays. On the other hand, its electronic structures and defects are largely different from conventional covalent semiconductors such as Si. This chapter explains their origins and reviews the defects that have been known to date. Finally, we will discuss how to fabricate high-quality, stabile AOS.
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4.1: Invited Paper: Electronic Structure, Carrier Transport, Defects and Impurities in Amorphous Oxide Semiconductor
SID Symposium Digest of Technical Papers, 2013Co-Authors: Toshio Kamiya, Kenji Nomura, Hideo HosonoAbstract:This review paper provides the present status of Amorphous Oxide semiconductor technology along with knowledge obtained to date on their carrier transport, defects and impurities in relation to their stability issues.
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Present status and open issues of Amorphous Oxide semiconductor TFT technology
2013 IEEE Photonics Conference, 2013Co-Authors: Kenji NomuraAbstract:We review the progress made to date on Amorphous Oxide semiconductor TFT technology. In addition, we discuss some remaining issues for manufacturing with the focus on the role of hydrogen impurity in Amorphous Oxide semiconductors.