The Experts below are selected from a list of 17622 Experts worldwide ranked by ideXlab platform

T. Yamauchi - One of the best experts on this subject based on the ideXlab platform.

  • new continuous input current Charge Pump power factor correction electronic ballast
    IEEE Transactions on Industry Applications, 1999
    Co-Authors: Jinrong Qian, F C Lee, T. Yamauchi
    Abstract:

    Continuous-input current Charge Pump power-factor-correction (CIC-CPPFC) electronic ballasts are proposed in this paper. The CPPFC circuit and unity power factor condition using the Charge Pump concept are derived and analyzed. The average lamp current control with switching frequency modulation was developed so that low crest factor and constant lamp power operation can be achieved. The developed electronic ballast has continuous input current, so that a small line input filter can be used. The proposed CIC-CPPFC electronic ballast was implemented and tested with two 45 W fluorescent lamps. It is shown that the measured line input current harmonics satisfy IEC 1000-3-2 Class C requirements.

  • a new continuous input current Charge Pump power factor correction cic cppfc electronic ballast
    IEEE Industry Applications Society Annual Meeting, 1997
    Co-Authors: Jinrong Qian, F C Lee, T. Yamauchi
    Abstract:

    A continuous input current Charge Pump power factor correction (CIC-CPPFC) electronic ballast is proposed in this paper. Circuit derivation and unity power factor condition using the Charge Pump concept are derived and analyzed. The power switch only deals with the resonant load current which is the same as the two-stage approach. The developed electronic ballast has continuous input line current so that a small line input filter can be used. The proposed CIC-CPPFC electronic ballast was implemented and tested. It is shown that switching current stress is only half of the integrated single stage electronic ballast. 0.992 power factor and 10.5% THD can be achieved with two 45-watt fluorescent lamps.

  • an improved Charge Pump electronic ballast with low thd and low crest factor
    IEEE Transactions on Power Electronics, 1997
    Co-Authors: T. Yamauchi
    Abstract:

    The "Charge Pump" electronic ballast circuit, which employs a charging capacitor and a high-frequency AC source to implement power factor correction (PFC), has become an attractive topology for ballasting fluorescent lamps. However, the basic "Charge Pump" electronic ballast circuit has the problems of high total harmonic distortion (THD) of the input current and high crest factor (CF) of the lamp current. This paper analyzes the origin of the problems and proposes a novel solution. With the addition of two small clamping diodes, good input current (PF>0.99, THD<5%) and lamp current (CF<1.6) can be obtained with open-loop control. Experimental results are provided for verification.

  • current source Charge Pump power factor correction electronic ballast
    Power Electronics Specialists Conference, 1997
    Co-Authors: Jinrong Qian, F C Lee, T. Yamauchi
    Abstract:

    Current source Charge Pump power factor correction (CS-CPPFC) electronic ballast is presented in this paper. Unity power factor condition and operation principle using the Charge Pump concept are derived and analyzed. Based on the steady state analysis, the design considerations are discussed in detail. It is shown that the power switch only deals with the resonant load current, which is the same as in the two-stage approach. This feature is very attractive, since the switch in the integrated single-stage power factor correction converter has to carry the current not only from input but also from the load. The developed current source Charge Pump electronic ballast can save one choke inductor, and has a potentially low cost. The current source Charge Pump electronic ballast was implemented and tested. It is shown that 0.992 power factor and 9.0% THD can be achieved for 85-watt fluorescent lamps.

T M Jahns - One of the best experts on this subject based on the ideXlab platform.

  • a self boost Charge Pump topology for a gate drive high side power supply
    IEEE Transactions on Power Electronics, 2005
    Co-Authors: Shihong Park, T M Jahns
    Abstract:

    A self-boost Charge Pump topology is presented for a floating high-side gate drive power supply that features high voltage and current capabilities for use in integrated power electronic modules (IPEMs). The transformerless topology uses a small capacitor to transfer energy to the high-side switch from a single power supply referred to the negative rail. Unlike conventional bootstrap power supplies, no switching of the main phase-leg switches is required to provide power continuously to the high-side gate drive, even if the high-side switch is permanently on. Additional advantages include low parts-count and simple control requirements. A piecewise linear model of the self-boost Charge Pump is derived and the circuit's operating characteristics are analyzed. Simulation and experimental results are provided to verify the desired operation of the new Charge Pump circuit. Guidelines are provided to assist with circuit component selection in new applications.

  • a self boost Charge Pump topology for a gate drive high side power supply
    Applied Power Electronics Conference, 2003
    Co-Authors: Shihong Park, T M Jahns
    Abstract:

    A self-boost Charge Pump topology is presented for a floating high-side gate drive power supply that features high voltage and current capabilities for use in integrated power electronic modules (IPEMs). The transformerless topology uses a small capacitor to transfer energy to the high-side switch from a single power supply referred to the negative rail. Unlike conventional bootstrap power supplies, no switching of the main phase-leg switches is required to provide power continuously to the high-side gate drive, even if the high-side switch is permanently on. Additional advantages include a low parts count and simple control requirements. A piecewise linear model of the self-boost Charge Pump is derived and the circuit's operating characteristics are analyzed. Simulation and experimental results are provided to verify the desired operation of the new Charge Pump circuit.

R St Pierre - One of the best experts on this subject based on the ideXlab platform.

  • low power bicmos op amp with integrated current mode Charge Pump
    IEEE Journal of Solid-state Circuits, 2000
    Co-Authors: R St Pierre
    Abstract:

    An operational amplifier with an integrated current-mode Charge Pump is presented. This operational amplifier functions with a 4-/spl mu/A single-supply above-the-rail input and rail-to-rail output. Having an integrated Charge Pump greatly simplifies the amplifier design while providing an increased dynamic range over other rail-to-rail amplifiers. The current-mode Charge Pump limits the power loss associated with feedthrough current found in most voltage mode designs. The resulting amplifier, designed with a dual-well BiCMOS process, achieves a bandwidth of 54 kHz while consuming less than 10 /spl mu/W.

  • low power bicmos op amp with integrated current mode Charge Pump
    European Solid-State Circuits Conference, 1999
    Co-Authors: R St Pierre
    Abstract:

    An operational amplifier with an integrated current mode Charge Pump is presented. This operational amplifier functions with a 4µA single-supply above-the-rail input and rail-to-rail output. Having an integrated Charge Pump greatly simplifies the amplifier design while providing an increased dynamic range over other rail-to-rail amplifiers. The current mode Charge Pump limits the power loss associated with feedthrough current found in most voltage mode designs. The resulting amplifier achieves a bandwidth of 54KHz, while consuming less than 10µW.

Shihong Park - One of the best experts on this subject based on the ideXlab platform.

  • a self boost Charge Pump topology for a gate drive high side power supply
    IEEE Transactions on Power Electronics, 2005
    Co-Authors: Shihong Park, T M Jahns
    Abstract:

    A self-boost Charge Pump topology is presented for a floating high-side gate drive power supply that features high voltage and current capabilities for use in integrated power electronic modules (IPEMs). The transformerless topology uses a small capacitor to transfer energy to the high-side switch from a single power supply referred to the negative rail. Unlike conventional bootstrap power supplies, no switching of the main phase-leg switches is required to provide power continuously to the high-side gate drive, even if the high-side switch is permanently on. Additional advantages include low parts-count and simple control requirements. A piecewise linear model of the self-boost Charge Pump is derived and the circuit's operating characteristics are analyzed. Simulation and experimental results are provided to verify the desired operation of the new Charge Pump circuit. Guidelines are provided to assist with circuit component selection in new applications.

  • a self boost Charge Pump topology for a gate drive high side power supply
    Applied Power Electronics Conference, 2003
    Co-Authors: Shihong Park, T M Jahns
    Abstract:

    A self-boost Charge Pump topology is presented for a floating high-side gate drive power supply that features high voltage and current capabilities for use in integrated power electronic modules (IPEMs). The transformerless topology uses a small capacitor to transfer energy to the high-side switch from a single power supply referred to the negative rail. Unlike conventional bootstrap power supplies, no switching of the main phase-leg switches is required to provide power continuously to the high-side gate drive, even if the high-side switch is permanently on. Additional advantages include a low parts count and simple control requirements. A piecewise linear model of the self-boost Charge Pump is derived and the circuit's operating characteristics are analyzed. Simulation and experimental results are provided to verify the desired operation of the new Charge Pump circuit.

Kehorng Chen - One of the best experts on this subject based on the ideXlab platform.

  • A dual-phase Charge Pump circuit with compact size
    Analog Integrated Circuits and Signal Processing, 2010
    Co-Authors: Ming-hsin Huang, Pochin Fan, Chunyu Hsieh, Kehorng Chen
    Abstract:

    In this paper, a regulated dual-phase Charge Pump with compact size is presented. By means of a nano-ampere switched-capacitor voltage reference (SCVR) circuit, the dual-phase Charge Pump regulator can reduce the quiescent current and the output ripple. Besides, a new power stage is proposed to define the stability of the overall system. Owing to the design of buffer stage, the Charge Pump regulator can extend bandwidth and increase phase margin. Thus, the transient response and driving capability can be improved. Beside, the proposed automatic body switching circuit can efficiently drive the bulk of the power p-type MOSFETs to avoid leakage and potential latch-up. This chip was fabricated by TSMC 0.35 μm, 3.3 V/5 V 2P4 M CMOS technology. The input voltage range varies from 2.9 to 4.9 V for the lithium battery and the output voltage is regulated at 5 V. Experimental results demonstrate the Charge Pump can provide 50 mA maximum load current without any oscillation problems.

  • Low-Ripple and Dual-Phase Charge Pump Circuit Regulated by Switched-Capacitor-Based Bandgap Reference
    IEEE Transactions on Power Electronics, 2009
    Co-Authors: Ming-hsin Huang, Pochin Fan, Kehorng Chen
    Abstract:

    This paper proposes a low-ripple and dual-phase Charge Pump circuit regulated by switched-capacitor-based bandgap reference. Due to design of a buffer stage, a system can have better bandwidth and phase margin, and thus, the transient response and driving capability can be improved. Besides, the dual-phase control can reduce the output voltage ripple by means of only one closed-loop regulation in order to improve the power conversion efficiency. Besides, the proposed automatic body switching (ABS) circuit can efficiently drive the bulk of the power p-type MOSFETs to avoid leakage and potential latch-up. Usually, the regulated Charge Pump circuit needs a bandgap reference circuit to provide a temperature-independent reference voltage. The switched-capacitor-based bandgap reference circuit is utilized to regulate the output voltage. This chip was fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 mum 3.3 V/5 V 2P4M CMOS technology. The input voltage range varies from 2.9 to 5.5 V, and the output voltage is regulated at 5 V. Experimental results demonstrate that the Charge Pump can provide 48 mA maximum load current without any oscillation problems.

  • a dual phase Charge Pump with compact size
    International Conference on Electronics Circuits and Systems, 2007
    Co-Authors: Chunyu Hsieh, Pochin Fan, Kehorng Chen
    Abstract:

    In this paper, the regulated dual phase Charge Pump with compact size is presented. This Charge Pump uses the dual phase technique to reduce the output ripple and proposes a new power stage to define the stability of the overall system. This Charge Pump provides output voltage 5V and maximum load current 50 Am with the constant frequency regulation. This design is based on TSMC 035 mum 3.3V/5V CMOS technology.