The Experts below are selected from a list of 13113 Experts worldwide ranked by ideXlab platform
Pratyusha Davuluri - One of the best experts on this subject based on the ideXlab platform.
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x feg module for titan Datasheet
2018Co-Authors: Pratyusha DavuluriAbstract:Key BenefitsMaximize analytical probe currents to improve lateral resolution in chemical analysis.Enhance time to result and signal to noise ratio in S/TEM imaging and chemical analysis.Improve spatial coherence for holography and HR-TEM applications.Benefit from the excellent stability of the emission in automated experiments.The ease of use coupled with the long life time and robustness of Schottky emitter technology maximizes your throughput.Explore the frontiers in electron microscopy with the combination of an X-FEG with corrector and monochromator technology.Upgrade your Titan S/TEM with the new X-FEG to boost your perfor mance.
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Talos for Materials Science Datasheet
2018Co-Authors: Pratyusha DavuluriAbstract:The Thermo Scientific™ Talos™ is a 200kV scanning/transmission electron microscope (S/TEM) that delivers fast, precise, quantitative characterization of nanomaterials in multiple dimensions. With innovative features designed to increase throughput, precision, and ease of use, Talos is ideal for advanced research and analysis across academic, government, and industrial research environments.
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helios nanolab 600i Datasheet
2018Co-Authors: Pratyusha DavuluriAbstract:Helios NanoLab600i, the DualBeam of reference for ultra-high resolution of imaging, high quality sample preparation and nanofabrication. The Helios NanoLab™ 600i builds on the success of winning DualBeam™ series offering advances in the ion beam, electron beam, patterning and a range of features to make milling, imaging, analysis and sample preparation down to a nanoscale, standard applications in the lab.
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Talos F200X Datasheet
2018Co-Authors: Pratyusha DavuluriAbstract:The Thermo Scientific™ Talos™ F200X scanning/ transmission electron microscope (S/TEM) delivers the fastest, most precise, quantitative characterization of nanomaterials in multiple dimensions. With innovative features designed to increase throughput, precision and ease of use, FEI’s Talos F200X is ideal for advanced research and analysis across academic, government, and industrial research environments.
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prisma e Datasheet
2018Co-Authors: Pratyusha DavuluriAbstract:Prisma E offers all-round performance in imaging and analytics, a unique environmental mode (ESEM), and a full range of accessories that make it the most complete tungsten SEM available.
Massimo Poncino - One of the best experts on this subject based on the ideXlab platform.
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A Diode-Aware Model of PV Modules from Datasheet Specifications
2020 Design Automation & Test in Europe Conference & Exhibition (DATE), 2020Co-Authors: Sara Vinco, Yukai Chen, Enrico Macii, Massimo PoncinoAbstract:Semi-empirical models of photovoltaic (PV) modules based only on Datasheet information are popular in electrical energy systems (EES) simulation because they can be built without measurements and allow quick exploration of alternative devices. One key limitation of these models, however, is the fact that they cannot model the presence of bypass diodes, which are inserted across a set of series-connected cells in a PV module to mitigate the impact of partial shading; Datasheet information refer in fact to the operations of the module under uniform irradiance. Neglecting the effect of bypass diodes may incur in significant underestimation of the extracted power. This paper proposes a semi-empirical model for a PV module, that, by taking into account the only available information about bypass diodes in a Datasheet, i.e., its number, by a first downscaling the model to a single PV cell and a subsequent upscaling to the level of a substring and of a module, allows to take into account the diode effect as much accurately as allowed by the Datasheet information. Experimental results show that, in a typical PV array on a roof, using a diode-agnostic model can significantly underestimate the output power production.
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DATE - A Diode-Aware Model of PV Modules from Datasheet Specifications
2020 Design Automation & Test in Europe Conference & Exhibition (DATE), 2020Co-Authors: Sara Vinco, Yukai Chen, Enrico Macii, Massimo PoncinoAbstract:Semi-empirical models of photovoltaic (PV) modules based only on Datasheet information are popular in electrical energy systems (EES) simulation because they can be built without measurements and allow quick exploration of alternative devices. One key limitation of these models, however, is the fact that they cannot model the presence of bypass diodes, which are inserted across a set of series-connected cells in a PV module to mitigate the impact of partial shading; Datasheet information refer in fact to the operations of the module under uniform irradiance. Neglecting the effect of bypass diodes may incur in significant underestimation of the extracted power.This paper proposes a semi-empirical model for a PV module, that, by taking into account the only available information about bypass diodes in a Datasheet, i.e., its number, by a first downscaling the model to a single PV cell and a subsequent upscaling to the level of a substring and of a module, allows to take into accout the diode effect as much accurately as allowed by the Datasheet information.Experimental results show that, in a typical PV array on a roof, using a diode-agnostic model can signifantly underestimate the output power production.
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ISLPED - An automated framework for generating variable-accuracy battery models from Datasheet information
International Symposium on Low Power Electronics and Design (ISLPED), 2013Co-Authors: Massimo Petricca, Enrico Macii, Donghwa Shin, Alberto Bocca, Alberto Macii, Massimo PoncinoAbstract:Models based on an electrical circuit equivalent have become the most popular choice for modeling the behavior of batteries, thanks to their ease of co-simulation with other parts of a digital system. Such circuit models are actually model templates: the specific values of their electrical elements must be derived by the analysis of the specific battery devices to be modeled. This process requires either to measure the battery characteristics or to derive them from the Datasheet. In the latter case, however, very often not all information are available and the model fitting becomes then unfeasible. In this paper we present a methodology for deriving, in a semi-automatic way, circuit equivalent battery models solely from data available in a battery Datasheet. In order to account for the different amount of information available, we introduce the concept of "level" of a model, so that models with different accuracy can be derived depending on the available data. The methodology requires only minimal intervention by the designer and it automatically generates MATLAB models once the required data for the corresponding model level are transcribed from the Datasheet. Simulation results show that our methodology allows to accurately reconstruct the information reported in the Datasheet as well as to derive missing ones.
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An automated framework for generating variable-accuracy battery models from Datasheet information
International Symposium on Low Power Electronics and Design (ISLPED), 2013Co-Authors: Massimo Petricca, Enrico Macii, Donghwa Shin, Alberto Bocca, Alberto Macii, Massimo PoncinoAbstract:Models based on an electrical circuit equivalent have become the most popular choice for modeling the behavior of batteries, thanks to their ease of co-simulation with other parts of a digital system. Such circuit models are actually model templates: the specific values of their electrical elements must be derived by the analysis of the specific battery devices to be modeled. This process requires either to measure the battery characteristics or to derive them from the Datasheet. In the latter case, however, very often not all information are available and the model fitting becomes then unfeasible. In this paper we present a methodology for deriving, in a semi-automatic way, circuit equivalent battery models solely from data available in a battery Datasheet. In order to account for the different amount of information available, we introduce the concept of “level” of a model, so that models with different accuracy can be derived depending on the available data. The methodology requires only minimal intervention by the designer and it automatically generates MATLAB models once the required data for the corresponding model level are transcribed from the Datasheet. Simulation results show that our methodology allows to accurately reconstruct the information reported in the Datasheet as well as to derive missing ones.
Douglas M. Densmore - One of the best experts on this subject based on the ideXlab platform.
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Owl: Electronic Datasheet generator
ACS Synthetic Biology, 2014Co-Authors: Evan Appleton, Jenhan Tao, F. Carter Wheatley, Devina H. Desai, Thomas M. Lozanoski, Pooja D. Shah, Jake A. Awtry, Shawn S. Jin, Traci L. Haddock, Douglas M. DensmoreAbstract:Owl ( www.owlcad.org ) is a biodesign automation tool that generates electronic Datasheets for synthetic biological parts using common formatting. Data can be retrieved automatically from existing repositories and modified in the Owl user interface (UI). Owl uses the data to generate an HTML page with standard typesetting that can be saved as a PDF file. Here we present the Owl software tool in its alpha version, its current UI, its description of input data for generating a Datasheet, its example Datasheets, and the vision of the tool's role in biodesign automation.
Alan H Mantooth - One of the best experts on this subject based on the ideXlab platform.
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Datasheet driven silicon carbide power mosfet model
IEEE Transactions on Power Electronics, 2014Co-Authors: M. Mudholkar, Shamim Ahmed, Nance M Ericson, S S Frank, Charles L Britton, Alan H MantoothAbstract:A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25°C to 225°C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new Datasheet driven parameter extraction strategy has been presented which requires only data available in device Datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.
M. Mudholkar - One of the best experts on this subject based on the ideXlab platform.
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Datasheet driven silicon carbide power mosfet model
IEEE Transactions on Power Electronics, 2014Co-Authors: M. Mudholkar, Shamim Ahmed, Nance M Ericson, S S Frank, Charles L Britton, Alan H MantoothAbstract:A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25°C to 225°C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new Datasheet driven parameter extraction strategy has been presented which requires only data available in device Datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.
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A Datasheet driven power MOSFET model and parameter extraction procedure for 1200V, 20A SiC MOSFETs
Proceedings of the 2011 14th European Conference on Power Electronics and Applications, 2011Co-Authors: M. Mudholkar, M. Saadeh, H. A. MantoothAbstract:A compact model for SiC Power MOSFETs has been presented. The model has been validated with measurements from commercially available 1200V, 20A SiC power MOSFETs. The model features temperature scaling from 25°C to 225°C, which is the operating temperature for the new devices. In order to improve the user's experience with the model, a new Datasheet driven parameter extraction strategy has been proposed. The parameter extraction strategy requires only the data normally given in device Datasheets, so off-the-shelf devices can characterized quickly. The model includes charge conserving expressions for all non-linear capacitances of the power MOSFET. The SiC power MOSFET shows excellent performance over elevated temperatures, with small variation in on-state resistance over temperature.
