The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Terry Alford - One of the best experts on this subject based on the ideXlab platform.
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effective Dopant Activation by susceptor assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon
Journal of Applied Physics, 2013Co-Authors: Zhao Zhao, David N Theodore, Rajitha N P Vemuri, S S Lau, A R Lanz, Terry AlfordAbstract:Rapid processing and reduced end-of-range diffusion result from susceptor-assisted microwave (MW) annealing, making this technique an efficient processing alternative for electrically activating Dopants within ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical Activation. Susceptor-assisted MW annealing, of ion-implanted Si, enables more effective Dopant Activation and at lower temperatures than required for rapid thermal annealing (RTA). Raman spectroscopy and ion channeling analyses are used to monitor the extent of ion implantation damage and recrystallization. The presence and behavior of extended defects are monitored by cross-section transmission electron microscopy. Phosphorus implanted Si samples experience effective electrical Activation upon MW annealing. On the other hand, when boron implanted Si is MW annealed, the growth of extended defects results in reduced crystalline quality that hinders the electrical Activation process. Further comparison of Dopant diffusion resulting from MW annealing and rapid thermal annealing is performed using secondary ion mass spectroscopy. MW annealed ion implanted samples show less end-of-range diffusion when compared to RTA samples. In particular, MW annealed P+ implanted samples achieve no visible diffusion and equivalent electrical Activation at a lower temperature and with a shorter time-duration of annealing compared to RTA. In this study, the peak temperature attained during annealing does not depend on the Dopant species or dose, for susceptor-assisted MW annealing of ion-implanted Si.
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effective Dopant Activation via low temperature microwave annealing of ion implanted silicon
Applied Physics Letters, 2013Co-Authors: Zhao Zhao, David N Theodore, Rajitha N P Vemuri, Sayantan Das, S S Lau, Terry AlfordAbstract:Susceptor-assisted microwave annealing enables effective Dopant Activation, at low temperatures, in ion-implanted Si. Given similar thermal budgets for microwave annealing and rapid thermal annealing (RTA), sheet resistances of microwave annealed Si, with either B+ or P+ implants, are lower than the values obtained using RTA. The fraction of Dopants activated is as high as 18% for B+ implants and 64% for P+ implants. Dopant diffusion is imperceptible after microwave annealing, but significant after RTA, for P+ implanted Si samples with the same Dopant Activation. Microwave annealing achieves such properties using shorter anneal times and lower peak temperatures compared to RTA.
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Susceptor assisted microwave annealing for recrystallization and Dopant Activation of arsenic-implanted silicon
Journal of Applied Physics, 2011Co-Authors: Rajitha N P Vemuri, S S Lau, Mandar J. Gadre, N. D. Theodore, Wayne Chen, Terry AlfordAbstract:The increasing need for quicker and more efficient processing techniques motivates the study of the use of a single frequency applicator microwave cavity, along with an alumina-coated SiC susceptor, as an alternative to current post-implantation processing. The extent of Si recrystallization and repair of the damage caused by arsenic implantation into Si is determined by cross-section transmission electron microscopy and Raman spectroscopy. Dopant Activation is evaluated by sheet resistance measurements. Secondary ion mass spectroscopy is used to compare the extent of diffusion that results from such microwave annealing with that experienced when using conventional rapid thermal annealing (RTA). The results show that, compared to susceptor-assisted microwave annealing, RTA caused undesired Dopant diffusion. The SiC-alumina susceptor plays a significant role in supplying heat to the Si substrate and also acts as an assistor that helps a high-Z Dopant, like arsenic, to absorb the microwave energy, using a m...
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Dopant Activation in arsenic implanted si by susceptor assisted low temperature microwave anneal
IEEE Electron Device Letters, 2011Co-Authors: Rajitha N P Vemuri, Mandar J. Gadre, N. D. Theodore, Terry AlfordAbstract:It is important for nanoscale transistors to have abrupt junctions, which are difficult to achieve via high-temperature anneals of implanted semiconductor layers due to undesired Dopant diffusion. The use of a single-frequency microwave cavity applicator, along with a SiC-Alumina susceptor/assistor, is suggested as an alternative postimplantation process. Secondary ion mass spectroscopy analysis of microwave-annealed As-implanted Si samples show minimal diffusion, compared to rapid thermal annealed samples. Cross-sectional transmission electron microscopy and Raman spectroscopy confirm damage repair and Si recrystallization upon low-temperature microwave annealing (up to 650°C). Ion channeling and sheet resistance measurements validate Dopant relocation and Activation. The susceptor is used to provide surface heating to the high-atomic-number Z implanted sample to enable it to absorb microwaves and thereby recrystallize through volumetric heating.
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Dopant Activation in ion implanted silicon by microwave annealing
Journal of Applied Physics, 2009Co-Authors: Terry Alford, D C Thompson, J W Mayer, David N TheodoreAbstract:Microwaves are used as a processing alternative for the electrical Activation of ion implanted Dopants and the repair of ion implant damage within silicon. Rutherford backscattering spectra demonstrate that microwave heating reduces the damage resulting from ion implantation of boron or arsenic into silicon. Cross-section transmission electron microscopy and selective area electron diffraction patterns demonstrate that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Sheet resistance readings indicate the time required for boron or arsenic electrical Activation within implanted silicon. Hall measurements demonstrate the extent of Dopant Activation after microwave heating of implanted silicon. Physical and electrical characterization determined that the mechanism of recrystallization in arsenic implanted silicon is solid phase epitaxial regrowth. The boron implanted silicon samples did not result in enough lattice damage to amorphize the silicon lattice and resulted in low boron Activation during microwave annealing even though recrystallization of the Si lattice damage did take place. Despite low boron Activation levels, the level of boron Activation in this work was higher than that expected from traditional annealing techniques. The kinetics of microwave heating and its effects on implanted Si are also discussed.
Jin Hong Park - One of the best experts on this subject based on the ideXlab platform.
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characteristics of metal induced crystallization Dopant Activation and its application to junction diodes on single crystalline silicon
Journal of Physics D, 2012Co-Authors: Wooshik Jung, Jin Hong Park, Hyunwook Jung, Krishna C. SaraswatAbstract:In this work, we investigated the effect of p- and n-type Dopant atoms (boron and phosphorus) on two- and one-step Ni metal-induced crystallization (MIC) of amorphous Si in the aspects of crystallization rate and crystal quality with XRD, SIMS and sheet resistance measurements. The two- and one-step MIC techniques were first applied to fabricate p+/n and n+/p junction diodes on single-crystalline Si substrates below 500 °C and we compared those with the diodes formed by the solid phase crystallization technique at 750 °C, in order to demonstrate the feasibility of the low-temperature MIC junction diodes for source/drain of p- and n-channel single-crystalline Si TFTs.
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Dopant dependence of one step metal induced Dopant Activation process in silicon
Current Applied Physics, 2012Co-Authors: Jin Hong Park, Wooshik JungAbstract:Abstract We investigate Dopant-dependence of low temperature Dopant Activation technique in α-Si featuring one-step metal-induced crystallization (MIC) to decrease resistivity of p+ and n+ Si films by forming NixSiy. Ni not only crystallizes p-type α-Si film but also facilitates Activation of boron atoms in the α-Si during the crystallization at 500 °C. However, phosphorus atoms are poorly activated because of the suppressed Ni-MIC rate in n-type α-Si. Finally, p+/n and n+/p junction diodes are demonstrated on single crystalline Si substrates by the low temperature Dopant Activation technique promising for high performance TFTs as well as transistors with an elevated S/D.
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optimization of germanium ge hbox n hbox p and hbox p hbox n junction diodes and sub 380 circ hbox c ge cmos technology for monolithic three dimensional integration
IEEE Transactions on Electron Devices, 2011Co-Authors: Jin Hong Park, Hyun-yong Yu, Duygu Kuzum, Krishna C. SaraswatAbstract:In this paper, we optimize and investigate Ge n+/p and p+/n junction diodes formed by Co metal-induced Dopant Activation technique at the Activation temperature range between 300 °C and 420 °C in terms of on/ off-current ratio. Combining this low-temperature n+/p and p+/n junction formation technique with a low-temperature gate stack comprised of Al/Al2O3/GeO2 by ozone oxidation technique, we demonstrate n- and p-channel Ge metal-oxide-semiconductor field-effect transistors (MOSFETs), respectively, at sub-360 °C and 380 °C. This low-temperature Ge MOSFET process can be utilized to integrate Ge complementary metal-oxide-semiconductor devices above interconnect layers for monolithic 3-D integrated circuits.
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n channel germanium mosfet fabricated below 360 circ hbox c by cobalt induced Dopant Activation for monolithic three dimensional ics
IEEE Electron Device Letters, 2011Co-Authors: Jin Hong Park, Duygu Kuzum, Wooshik Jung, Krishna C. SaraswatAbstract:Below 360°C, we demonstrate germanium (Ge) n+/p junction diode and n-channel Ge metal-oxide-semiconductor field-effect transistor (MOSFET) with a low temperature Al/Al2O3/GeO2 gate stack for monolithic 3-D integration using a metal-induced Dopant Activation (MIDA) technique. In particular, the cobalt (Co) MIDA phenomenon is investigated on Ge damaged by an implantation process. Shallow (~100 nm) source/drain junctions with very low resistivity (5.2 × 10-4 Ω-cm) are then achieved at very low temperature by the Co MIDA technique. Consequently, high diode and transistor current on/off ratios (~104 and ~103, respectively) are obtained in this n-channel Ge MOSFET.
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low temperature germanium growth on silicon oxide using boron seed layer and in situ Dopant Activation
Journal of The Electrochemical Society, 2010Co-Authors: Munehiro Tada, Jin Hong Park, Duygu Kuzum, Yoshio Nishi, Gaurav Thareja, Jinendra Raja Jain, Krishna C. SaraswatAbstract:Low temperature (<350°C) growth of germanium (Ge) on silicon dioxide (SiO 2 ) is demonstrated using a diborane pretreatment technique. Using SiH 4 and B 2 H 6 precursors, Si 1-x B x layers are deposited on Si0 2 to seed the chemical vapor deposition growth of Ge films. In the SiH 4 :B 2 H 6 system, the binary deposition mechanism of the Si 1-x B x film is explained by the "enhancement" model. In situ doping of Ge films is also investigated. In situ boron Activation is achieved during the crystallization of the Ge films at 310°C. Device applicability of the doped Ge film growth on oxide is demonstrated in a low temperature (350°C) Si p-channel metal-oxide-semiconductor field-effect transistor, in which the Ge layer is used as a gate electrode. The low temperature Ge growth technique can be used for low thermal budget processes, e.g., monolithic three-dimensional integrated circuits.
Krishna C. Saraswat - One of the best experts on this subject based on the ideXlab platform.
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enhancement of phosphorus Dopant Activation and diffusion suppression by fluorine co implant in epitaxially grown germanium
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012Co-Authors: Wooshik Jung, Aneesh Nainani, Ju Hyung Nam, J Jason Y Lin, Seunghwa Ryu, Krishna C. SaraswatAbstract:To date, it is a major challenge to achieve in Ge n-MOSFETs low parasitic resistance and ultra shallow n+-p junction. Many studies indicate that vacancies that are present in n-doped Ge i) form electrically neutral donor-vacancy (DnV) pairs that reduce the amount of activated Dopants, and ii) vacancy itself facilitates the enhanced Dopant diffusion. In this work, we aim to achieve both higher Activation level and less diffusion by passivating the vacancies with fluorine (F) implant.
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characteristics of metal induced crystallization Dopant Activation and its application to junction diodes on single crystalline silicon
Journal of Physics D, 2012Co-Authors: Wooshik Jung, Jin Hong Park, Hyunwook Jung, Krishna C. SaraswatAbstract:In this work, we investigated the effect of p- and n-type Dopant atoms (boron and phosphorus) on two- and one-step Ni metal-induced crystallization (MIC) of amorphous Si in the aspects of crystallization rate and crystal quality with XRD, SIMS and sheet resistance measurements. The two- and one-step MIC techniques were first applied to fabricate p+/n and n+/p junction diodes on single-crystalline Si substrates below 500 °C and we compared those with the diodes formed by the solid phase crystallization technique at 750 °C, in order to demonstrate the feasibility of the low-temperature MIC junction diodes for source/drain of p- and n-channel single-crystalline Si TFTs.
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optimization of germanium ge hbox n hbox p and hbox p hbox n junction diodes and sub 380 circ hbox c ge cmos technology for monolithic three dimensional integration
IEEE Transactions on Electron Devices, 2011Co-Authors: Jin Hong Park, Hyun-yong Yu, Duygu Kuzum, Krishna C. SaraswatAbstract:In this paper, we optimize and investigate Ge n+/p and p+/n junction diodes formed by Co metal-induced Dopant Activation technique at the Activation temperature range between 300 °C and 420 °C in terms of on/ off-current ratio. Combining this low-temperature n+/p and p+/n junction formation technique with a low-temperature gate stack comprised of Al/Al2O3/GeO2 by ozone oxidation technique, we demonstrate n- and p-channel Ge metal-oxide-semiconductor field-effect transistors (MOSFETs), respectively, at sub-360 °C and 380 °C. This low-temperature Ge MOSFET process can be utilized to integrate Ge complementary metal-oxide-semiconductor devices above interconnect layers for monolithic 3-D integrated circuits.
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n channel germanium mosfet fabricated below 360 circ hbox c by cobalt induced Dopant Activation for monolithic three dimensional ics
IEEE Electron Device Letters, 2011Co-Authors: Jin Hong Park, Duygu Kuzum, Wooshik Jung, Krishna C. SaraswatAbstract:Below 360°C, we demonstrate germanium (Ge) n+/p junction diode and n-channel Ge metal-oxide-semiconductor field-effect transistor (MOSFET) with a low temperature Al/Al2O3/GeO2 gate stack for monolithic 3-D integration using a metal-induced Dopant Activation (MIDA) technique. In particular, the cobalt (Co) MIDA phenomenon is investigated on Ge damaged by an implantation process. Shallow (~100 nm) source/drain junctions with very low resistivity (5.2 × 10-4 Ω-cm) are then achieved at very low temperature by the Co MIDA technique. Consequently, high diode and transistor current on/off ratios (~104 and ~103, respectively) are obtained in this n-channel Ge MOSFET.
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novel sige source drain for reduced parasitic resistance in ge nmos
Meeting Abstracts, 2010Co-Authors: Shyam Raghunathan, Tejas Krishnamohan, Krishna C. SaraswatAbstract:Summary: We have experimentally investigated the use of SiGe as source/drain material to reduce the parasitic resistance that is an important limitation of Germanium nchannel MOSFETs. We have utilized circular TLM (transmission line method) measurement structures to extract the parasitic resistances of these SiGe layers and show about two orders of magnitude improvement in specific contact resistivity for insitu-doped SiGe (20% Ge) over 100% Ge. We also observe lesser leakage in SiGe n+ p diodes compared to Ge n+ p diodes, thus making these suitable for incorporation into Ge n-channel MOSFETs. Motivation: Germanium is being considered as a leading candidate for channel material for future CMOS technology owing to its high electron and hole mobilities. While Ge p-channel MOSFETs have shown excellent performance[1], n-channel transistors have exhibited poor drive currents owing to gate passivation and parasitic resistance issues [2]. The parasitic resistance issues are caused by poor Dopant Activation and large contact barrier height (pinned near valence band). Previous work [3] has shown that SiGe with large Si fraction has better n-type Dopant Activation than Ge. Hence we explore the use of SiGe as the source/drain, to alleviate the parasitic resistance issue. Experiment: Epi-Germanium virtual substrates [4] were utilized for this study. An AMAT Centura epitaxial reactor was utilized to create the Epi-Ge substrates and to epitaxially grow SiGe layers on top. SiGe concentrations ranging from 100% Ge to 20% Ge SiGe were characterized and grown for this study. We have studied both implanted and insitu-doped SiGe layers. The ionimplantation dose (P31+) was 4 x 10 15 /cm 2
Rajitha N P Vemuri - One of the best experts on this subject based on the ideXlab platform.
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effective Dopant Activation by susceptor assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon
Journal of Applied Physics, 2013Co-Authors: Zhao Zhao, David N Theodore, Rajitha N P Vemuri, S S Lau, A R Lanz, Terry AlfordAbstract:Rapid processing and reduced end-of-range diffusion result from susceptor-assisted microwave (MW) annealing, making this technique an efficient processing alternative for electrically activating Dopants within ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical Activation. Susceptor-assisted MW annealing, of ion-implanted Si, enables more effective Dopant Activation and at lower temperatures than required for rapid thermal annealing (RTA). Raman spectroscopy and ion channeling analyses are used to monitor the extent of ion implantation damage and recrystallization. The presence and behavior of extended defects are monitored by cross-section transmission electron microscopy. Phosphorus implanted Si samples experience effective electrical Activation upon MW annealing. On the other hand, when boron implanted Si is MW annealed, the growth of extended defects results in reduced crystalline quality that hinders the electrical Activation process. Further comparison of Dopant diffusion resulting from MW annealing and rapid thermal annealing is performed using secondary ion mass spectroscopy. MW annealed ion implanted samples show less end-of-range diffusion when compared to RTA samples. In particular, MW annealed P+ implanted samples achieve no visible diffusion and equivalent electrical Activation at a lower temperature and with a shorter time-duration of annealing compared to RTA. In this study, the peak temperature attained during annealing does not depend on the Dopant species or dose, for susceptor-assisted MW annealing of ion-implanted Si.
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effective Dopant Activation via low temperature microwave annealing of ion implanted silicon
Applied Physics Letters, 2013Co-Authors: Zhao Zhao, David N Theodore, Rajitha N P Vemuri, Sayantan Das, S S Lau, Terry AlfordAbstract:Susceptor-assisted microwave annealing enables effective Dopant Activation, at low temperatures, in ion-implanted Si. Given similar thermal budgets for microwave annealing and rapid thermal annealing (RTA), sheet resistances of microwave annealed Si, with either B+ or P+ implants, are lower than the values obtained using RTA. The fraction of Dopants activated is as high as 18% for B+ implants and 64% for P+ implants. Dopant diffusion is imperceptible after microwave annealing, but significant after RTA, for P+ implanted Si samples with the same Dopant Activation. Microwave annealing achieves such properties using shorter anneal times and lower peak temperatures compared to RTA.
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Susceptor assisted microwave annealing for recrystallization and Dopant Activation of arsenic-implanted silicon
Journal of Applied Physics, 2011Co-Authors: Rajitha N P Vemuri, S S Lau, Mandar J. Gadre, N. D. Theodore, Wayne Chen, Terry AlfordAbstract:The increasing need for quicker and more efficient processing techniques motivates the study of the use of a single frequency applicator microwave cavity, along with an alumina-coated SiC susceptor, as an alternative to current post-implantation processing. The extent of Si recrystallization and repair of the damage caused by arsenic implantation into Si is determined by cross-section transmission electron microscopy and Raman spectroscopy. Dopant Activation is evaluated by sheet resistance measurements. Secondary ion mass spectroscopy is used to compare the extent of diffusion that results from such microwave annealing with that experienced when using conventional rapid thermal annealing (RTA). The results show that, compared to susceptor-assisted microwave annealing, RTA caused undesired Dopant diffusion. The SiC-alumina susceptor plays a significant role in supplying heat to the Si substrate and also acts as an assistor that helps a high-Z Dopant, like arsenic, to absorb the microwave energy, using a m...
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Dopant Activation in arsenic implanted si by susceptor assisted low temperature microwave anneal
IEEE Electron Device Letters, 2011Co-Authors: Rajitha N P Vemuri, Mandar J. Gadre, N. D. Theodore, Terry AlfordAbstract:It is important for nanoscale transistors to have abrupt junctions, which are difficult to achieve via high-temperature anneals of implanted semiconductor layers due to undesired Dopant diffusion. The use of a single-frequency microwave cavity applicator, along with a SiC-Alumina susceptor/assistor, is suggested as an alternative postimplantation process. Secondary ion mass spectroscopy analysis of microwave-annealed As-implanted Si samples show minimal diffusion, compared to rapid thermal annealed samples. Cross-sectional transmission electron microscopy and Raman spectroscopy confirm damage repair and Si recrystallization upon low-temperature microwave annealing (up to 650°C). Ion channeling and sheet resistance measurements validate Dopant relocation and Activation. The susceptor is used to provide surface heating to the high-atomic-number Z implanted sample to enable it to absorb microwaves and thereby recrystallize through volumetric heating.
Tiensheng Chao - One of the best experts on this subject based on the ideXlab platform.
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Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review
2016Co-Authors: Michael I Current, Tiensheng Chao, Tseung-yuen Tseng, Fu-liang YangAbstract:Abstract — Microwave annealing (MWA) and rapid thermal annealing (RTA) of Dopants in implanted Si are compared in their abilities to produce very shallow and highly activated junctions. First, arsenic (As), phosphorus (P), and BF2 implants in Si substrate were annealed by MWA at temperatures below 550 °C. Next, enhancing the substitutional carbon concentration ([C]sub) by cluster carbon implantation in (100) Si substrates with MWA or RTA techniques was investigated. Annealing temperatures and time effects were studied. Different formation mechanisms of SiCx layer were observed. In addition, substrate temperature is an important factor for Dopant Activation during MWA and in situ doped a-Si on oxide/Si substrate or glass were compared to elucidate the substrate temperature effect. After the discussion of Dopant Activation in Si substrates, low temperature formation of ultrathin NiGe layer is presented. Ultrathin NiGe films with low sheet resistance have been demonstrated with a novel two-step MWA process. In the two-step MWA process, the first step anneals the sample with low power MWA, and the second step applies higher power MWA for reducing sheet resistance. During fixed-frequency microwave heating, standing wave patterns may be present in the MWA chamber resulting in nodes and antinodes and thermal variations over the process wafer. Therefore, the effects of Si or quartz susceptor wafers on Dopant Activation and sheet resistance uniformity during fixed-frequency MWA were investigated. Index Terms — Dopant Activation, low temperature, microwave, microwave annealing (MWA), NiGe, solid phase epitaxial growt
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Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal
2016Co-Authors: Yaojen Lee, Fukuo Hsueh, Michael I Current, Tiensheng ChaoAbstract:Abstract—Microwave annealing of Dopants in Si has been re-ported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However, during conventional fixed-frequency microwave heating, standing wave patterns can be established in the microwave processing chamber, resulting in nodes and antinodes over the processing area, resulting in thermal variations over the process wafer. In this letter, the effects of Si or quartz susceptor wafers on Dopant Activation and sheet resistance unifor-mity during fixed-frequency microwave anneal are studied. The composition, number, and spacing of susceptor wafers were varied in a systematic fashion in these experiments. Index Terms—Coupling effect, low temperature, microwave an-neal, phosphorus, quartz
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susceptor coupling for the uniformity and Dopant Activation efficiency in implanted si under fixed frequency microwave anneal
IEEE Electron Device Letters, 2012Co-Authors: Yaojen Lee, Fukuo Hsueh, Michael I Current, Tiensheng ChaoAbstract:Microwave annealing of Dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However, during conventional fixed-frequency microwave heating, standing wave patterns can be established in the microwave processing chamber, resulting in nodes and antinodes over the processing area, resulting in thermal variations over the process wafer. In this letter, the effects of Si or quartz susceptor wafers on Dopant Activation and sheet resistance uniformity during fixed-frequency microwave anneal are studied. The composition, number, and spacing of susceptor wafers were varied in a systematic fashion in these experiments.
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Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation
IEEE Electron Device Letters, 2010Co-Authors: Yu-lun Lu, Fukuo Hsueh, Tiensheng Chao, Tzyen Cheng, Jeff M Kowalski, Jeff E Kowalski, Kuo-ching Huang, Ching-yi WuAbstract:In this letter, nanoscale p-MOS TFTs with a TiN gate electrode were realized using a novel microwave (MW) Dopant-Activation technique. We compared both low-temperature MW annealing and rapid thermal annealing. We successfully activated the source/drain region and suppressed the short-channel effects using low-temperature MW annealing. This technique is promising from the viewpoint of realizing high-performance and low-cost upper layer nanoscale transistors required for low-temperature 3-D integrated circuit fabrication.