The Experts below are selected from a list of 210423 Experts worldwide ranked by ideXlab platform
Gregoire Sissoko - One of the best experts on this subject based on the ideXlab platform.
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Silicon Solar Cells: Recombination and Electrical Parameters
'IntechOpen', 2021Co-Authors: Mohamadou Kaka, Gregoire SissokoAbstract:This study shows that most of silicon solar cell is configured in N-P junctions. In these solar cells, recombination mechanisms occur in five regions and are mainly two types: recombination mechanisms in bulk and surface recombination. In practice, the solar cells can be illuminated using several illumination modes: under monochromatic light, under multispectral light, under intense light concentration or under other modes. Basic equations describe the behaviour of the excess minority carriers generated in the base of the solar cells. To understand the electronic behaviour in the study, the solar cell is modelled in an equivalent circuit containing a shunt resistance and a series resistance. Silicon solar cells have two categories of Parameters (Electrical Parameters and recombination Parameters) which, the knowledge is very important to ameliorate the efficiency of the solar cells. Nowadays, many determination techniques of Electrical and recombination Parameters of solar cells exist. It is a great challenge for researchers to find a way to improve the solar cells efficiency. If this challenge is won, solar energy through photovoltaic energy can reveal itself to be a unique opportunity to solve energy and environmental problems simultaneously
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determination of the recombination and Electrical Parameters of a vertical multijunction silicon solar cell
Research Journal of Applied Sciences Engineering and Technology, 2012Co-Authors: Ly H Diallo, B Dieng, I Ly, M M Dione, M Ndiaye, O H Lemrabott, Z N Bako, A Wereme, Gregoire SissokoAbstract:A theoretical study of a vertical parallel junction under constant multispectral light has been made. By using a new approach of the carrier generation rate we determine the recombination and Electrical Parameters. The photocurrent density J_PH is presented as a calibrated function, diffusion length dependent. It intercepts with the experimental short circuit current density J_(SC), at the minority carriers diffusion length L value. The photo voltage as a calibrated function of surface recombination velocity intercepts the experimental open circuit voltage at the junction intrinsic recombination velocity. The shunt and series resistances are presented respectively as a calibrated function of the surface recombination velocity and it intercepts with the value of junction recombination velocity in short circuit SF_(SC) or in open circuit SF_(OC) at the experimental shunt and series resistances value.
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three dimensional study of a polycrystalline silicon solar cell the influence of the applied magnetic field on the Electrical Parameters
Semiconductor Science and Technology, 2011Co-Authors: A Dieng, I Zerbo, M Wade, A S Maiga, Gregoire SissokoAbstract:In this paper, we present a theoretical 3D study of a polycrystalline silicon solar cell in frequency modulation under polychromatic illumination and applied magnetic field. The influence of the applied magnetic field on the diode current density, Jd, and both electric power–photovoltage and photocurrent–photovoltage characteristics are discussed. The Nyquist diagram permitted us to determine the Electrical Parameters such as the series resistance Rs and parallel equivalent resistance Rp of a polycrystalline silicon solar cell. The Bode diagram is then used to calculate the cut-off frequency, capacitance C and inductance L. It has been shown that, under a magnetic field, the solar cell behavior is like that of a low-pass filter.
Tamer Kamel - One of the best experts on this subject based on the ideXlab platform.
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real time measurement of temperature sensitive Electrical Parameters in sic power mosfets
IEEE Transactions on Industrial Electronics, 2018Co-Authors: Antonio Griffo, Jiabin Wang, Kalhana Colombage, Tamer KamelAbstract:This paper examines a number of techniques for junction temperature estimation of silicon carbide (SiC) MOSFET s devices based on the measurement of temperature sensitive Electrical Parameters for use in online condition monitoring. Linearity, sensitivity to temperature, and circuit design for practical implementation are discussed in detail. A demonstrator based on the measurement of the quasi-threshold voltage, the turn- on transient characteristic ( $di/ dt$ ), the on -state voltage, and the gate current peak is designed and validated. It is shown that the threshold voltage, the estimation of the gate current peak, and the on -state voltage have potentially good sensitivity to temperature variation and linearity over a wide operating range. Very low sensitivity to temperature is shown for $di/ dt$ . The proposed method can provide a valuable tool for continuous health monitoring in emerging applications of SiC devices to high-reliability applications.
Gokhan Sahin - One of the best experts on this subject based on the ideXlab platform.
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effect of incidence angle on the Electrical Parameters of vertical parallel junction silicon solar cell under frequency domain
Moscow University Physics Bulletin, 2016Co-Authors: Gokhan SahinAbstract:The effect of incidence angle on the Electrical Parameters of vertical parallel silicon solar cell under frequency domain was theoretically analyzed. Based on the diffusion-recombination equation, the expression of excess minority carrier density in the base was established according to the modulation frequency and the illumination incidence angle. The excess minority carrier density, the photocurrent density, the photo voltage, series resistance, shunt resistance, electric power and the space charge region capacitance were calculated and plotted. The objective of this work was to show the effects of solar cell modulation frequency and the illumination incidence angle on these Electrical Parameters, electric power and space charge region capacitance. Plots of solar cell’s electric power with the junction recombination velocity gave the maximum solar cell’s electric power; Pm. Influence of various Parameters of incidence angles on the solar cell’s electric power was also studied.
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effect of wavelength on the Electrical Parameters of a vertical parallel junction silicon solar cell illuminated by its rear side in frequency domain
Results in physics, 2016Co-Authors: Gokhan SahinAbstract:Abstract The influence of the illumination wavelength on the Electrical Parameters of a vertical parallel junction silicon solar cell by its rear side is theoretically analyzed. Based on the excess minority carrier’s density, the photocurrent density and photovoltage across the junction were determined. From both photocurrent and the photovoltage, the series and shunt resistance expressions are deduced and the solar cell associated capacitance and conversion efficiency are calculated. The aim of this study is to show the influence of the illumination wavelength on the Electrical Parameters of the cell and the behavior of both parasitic resistances and capacitance versus operating point.
Srimanta Baishya - One of the best experts on this subject based on the ideXlab platform.
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effect of ge mole fraction on Electrical Parameters of si 1 x ge x source step finfet and its application as an inverter
Silicon, 2019Co-Authors: Rajesh Saha, Brinda Bhowmick, Srimanta BaishyaAbstract:This paper proposes device geometry of Fin-Field-Effect-Transistor (FinFET) with a step-fin. The source region of the proposed device consists of Si1−xGexand the effects of Ge-mole fraction on various Electrical Parameters are premeditated. The values of electron mobility, drive current, transconductance increases, and short channel effects (SCEs) decreases as the percentage of Ge in Si1−xGexincreases. However, the energy bandgap and gate capacitance reduce with the increase of Ge mole fraction in Si1−xGex. A minimum SS being 64.77 mV/decade, lower DIBL of 35.31 mV/V, and low value of threshold voltage 0.26793 V are obtained for Lg = 40 nm at Ge mole fraction (x) = 1. A better Ion/Ioff ratio of 3.11×108 is achieved for Lg = 40 nm at mole fraction (x) = 0.3 and VDS = 0.5 V. Complementary versions of the proposed device are used in the circuit of a digital inverter (VDD = 0.5 V), and the impact of Ge content on DC and transient analysis are observed. As Ge mole fractions increases, average gate delay decreases, high noise margin (NMH) increases, and low noise margin (NML) falls off. A minimum value of average gate delay 0.9 ps, has been achieved for Lg = 40 nm at Ge content (x)= 0.2.
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si and ge step finfets work function variability optimization and Electrical Parameters
Superlattices and Microstructures, 2017Co-Authors: Rajesh Saha, Brinda Bhowmick, Srimanta BaishyaAbstract:Abstract We present two different step-FinFETs under the consideration that fin material is made of either Si or Ge, named as Si step-FinFET and Ge step-FinFET. A comparative simulation study among conventional FinFET (C-FinFET), and proposed step-FinFETs is presented. It is observed that Ge step-FinFET offers better Ion/Ioff ratio, with a lower intrinsic delay. Parametric analysis shows that Si step-FinFET is more resistant to subthreshold swing (SS), drain induced barrier lowering (DIBL), threshold voltage (VT) roll off and Ge step-FinFET has higher Ion/Ioff ratio, lower intrinsic delay at various channel length and oxide thickness. In presence of gate metal work function variations (WFV), a comparison of Electrical Parameters between C-FinFET, Si step-FinFET, and Ge step-FinFET has also been studied. We found that Si step-FinFET gives lesser variation in threshold voltage (σVT), lesser variation in subthreshold swing (σSS), and higher variation in current ratio (σ(Ion/Ioff)) than C-FinFET. σVT, σSS, and σ(Ion/Ioff) are compared for Ge step-FinFET and Si step-FinFET.
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statistical dependence of gate metal work function on various Electrical Parameters for an n channel si step finfet
IEEE Transactions on Electron Devices, 2017Co-Authors: Rajesh Saha, Brinda Bhowmick, Srimanta BaishyaAbstract:This paper presents a 3-D statistical simulation study of an n-channel Si step-FinFET due to work-function variability depending on grain orientation of metal gate. The statistical fluctuation induced by metal gate granularity on threshold-voltage ( $\sigma {V}_{T}$ ), ON current ( $\sigma I_{ \mathrm{\scriptscriptstyle ON}}$ ), and OFF current ( $\sigma {I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) are estimated for a wide range of channel length and effective fin width for varying average grain size using Technology Computer Aided Design simulator. We investigated the effect of grain on magnitude of variability and also on shapes of various Electrical Parameters of distribution. The results indicate that $\sigma {V}_{T}$ decreases for increase in each dimension of the device. The value of $\sigma {I}_{ \mathrm{\scriptscriptstyle ON}}$ , and $\sigma {I}_{ \mathrm{\scriptscriptstyle OFF}}$ reduces as channel length increases. However, $\sigma {I}_{ \mathrm{\scriptscriptstyle ON}}$ and $\sigma {I}_{ \mathrm{\scriptscriptstyle OFF}}$ increase as fin width increases. The distribution of Electrical Parameters is near to normal for small grain size and becomes bimodal at large grain size. The proposed structure shows excellent behavior in terms of threshold-voltage ( ${V}_{T}$ ), subthreshold swing, and current ratio ( ${I}_{ \mathrm{\scriptscriptstyle ON}}/I_{ \mathrm{\scriptscriptstyle OFF}}$ ) compared with conventional FinFET at high temperature. It is found that the hot carrier effect reduces with increased effective channel width.
A Dieng - One of the best experts on this subject based on the ideXlab platform.
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three dimensional study of a polycrystalline silicon solar cell the influence of the applied magnetic field on the Electrical Parameters
Semiconductor Science and Technology, 2011Co-Authors: A Dieng, I Zerbo, M Wade, A S Maiga, Gregoire SissokoAbstract:In this paper, we present a theoretical 3D study of a polycrystalline silicon solar cell in frequency modulation under polychromatic illumination and applied magnetic field. The influence of the applied magnetic field on the diode current density, Jd, and both electric power–photovoltage and photocurrent–photovoltage characteristics are discussed. The Nyquist diagram permitted us to determine the Electrical Parameters such as the series resistance Rs and parallel equivalent resistance Rp of a polycrystalline silicon solar cell. The Bode diagram is then used to calculate the cut-off frequency, capacitance C and inductance L. It has been shown that, under a magnetic field, the solar cell behavior is like that of a low-pass filter.
