The Experts below are selected from a list of 969 Experts worldwide ranked by ideXlab platform
P J Parbrook - One of the best experts on this subject based on the ideXlab platform.
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doping of III Nitride Materials
Materials Science in Semiconductor Processing, 2017Co-Authors: Pietro Pampili, P J ParbrookAbstract:Abstract In this review paper we will report the current state of research regarding the doping of III-Nitride Materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as extending power electronic devices. It is found that doping of AlGaN and InGaN alloys with low-gallium-content has particular challenges, especially for p-Materials and these issues are described.
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characterisation of III Nitride Materials by synchrotron x ray microdiffraction reciprocal space mapping
Physica Status Solidi (c), 2013Co-Authors: V Kachkanov, Igor Dobnya, Kevin P Odonnell, K Lorenz, S Pereira, Ian Watson, Thomas C Sadler, Haoning Li, V Z Zubialevich, P J ParbrookAbstract:X-ray Reciprocal Space Mapping (RSM) is a powerful tool to explore the structure of semiconductor Materials. However, conventional lab-based RSMs are usually measured in two dimensions (2D) ignoring the third dimension of diffraction-space volume. We report the use of a combination of X-ray microfocusing and state-of-the-art 2D area detectors to study the full volume of diffraction–space while probing III-Nitride Materials on the microscale.
R.d. Dupuis - One of the best experts on this subject based on the ideXlab platform.
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actual temperatures of growing surfaces of III Nitride based Materials depending on substrates and forced convection conditions in metal organic chemical vapor deposition
Journal of Applied Physics, 2009Co-Authors: Suk Choi, Jae Hyun Ryou, R.d. DupuisAbstract:We have investigated the differences in the actual surface temperature of various substrates for the growth of III-Nitride Materials and the influence of this difference in the characteristics of the resulting epitaxial films. From calculations using the finite element method, high-thermal conductivity substrates have significantly higher surface temperature than substrates with low thermal conductivity in typical growth conditions of metal organic chemical vapor deposition. Also, the hydrodynamics of various growth parameters and the chamber condition play a significant role in establishing the actual surface temperature. The thickness of the substrate is found to be another important factor on the temperature of the surface. High resolution x-ray diffraction analysis of AlGaN epitaxial layers grown on bulk AlN substrates and sapphire substrates with different thicknesses supports our theoretical calculations, showing that the Al compositional discrepancy originated from the differences in the surface te...
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Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers
IEEE Transactions on Electron Devices, 2001Co-Authors: B.s. Shelton, D.j.h. Lambert, R.d. DupuisAbstract:The use of GaN for the fabrication of Schottky and p-i-n rectifiers presents an opportunity to take advantage of the high-voltage and high-power handling characteristics of the III-Nitride Materials. We report the results of two-dimensional (2-D) device simulations to provide estimates of the performance limitations and a comparison for vertical- and horizontal-geometry GaN mesa and planar Schottky-barrier rectifiers and p-i-n devices. The simulated performance of devices with practical drift region thicknesses indicate that it is possible to realize Schottky-barrier and p-i-n rectifiers with turn-on voltages of V/sub 0N/1000 and 3000 MW/cm/sup 2/, respectively.
Suk Choi - One of the best experts on this subject based on the ideXlab platform.
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actual temperatures of growing surfaces of III Nitride based Materials depending on substrates and forced convection conditions in metal organic chemical vapor deposition
Journal of Applied Physics, 2009Co-Authors: Suk Choi, Jae Hyun Ryou, R.d. DupuisAbstract:We have investigated the differences in the actual surface temperature of various substrates for the growth of III-Nitride Materials and the influence of this difference in the characteristics of the resulting epitaxial films. From calculations using the finite element method, high-thermal conductivity substrates have significantly higher surface temperature than substrates with low thermal conductivity in typical growth conditions of metal organic chemical vapor deposition. Also, the hydrodynamics of various growth parameters and the chamber condition play a significant role in establishing the actual surface temperature. The thickness of the substrate is found to be another important factor on the temperature of the surface. High resolution x-ray diffraction analysis of AlGaN epitaxial layers grown on bulk AlN substrates and sapphire substrates with different thicknesses supports our theoretical calculations, showing that the Al compositional discrepancy originated from the differences in the surface te...
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Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes
Journal of Crystal Growth, 2008Co-Authors: Russell D. Dupuis, Jae Hyun Ryou, Shyh Chiang Shen, P. Douglas Yoder, Suk Choi, Hee-jin Kim, Yun Zhang, Zachary LochnerAbstract:Wide-bandgap III-Nitride-based photodetectors are excellent candidates for high-sensitivity and cost-effective detection of photons in the ultraviolet and near-UV spectral region. Owing to the superior intrinsic properties of III-Nitride Materials for the detection of photons with short wavelengths λ
J. C. Zolper - One of the best experts on this subject based on the ideXlab platform.
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comparison of gan inn and aln powders for susceptor based rapid annealing of group III Nitride Materials
Semiconductor Science and Technology, 1997Co-Authors: J Hong, J. D. Mackenzie, S. M. Donovan, S. J. Pearton, C. R. Abernathy, J. C. ZolperAbstract:We have compared the use of GaN, InN and AlN powders for providing a nitrogen partial pressure within a graphite susceptor during high-temperature rapid thermal annealing of GaN, AlN, InN and InAlN. At temperatures above vapour transport of In from InN powder produces In droplet condensation on the surface of all Nitride samples being annealed. GaN powder provides better surface protection than AlN powders for temperatures up to when annealing GaN and AlN samples. Dissociation of Nitrides from the surface is found to occur with approximate activation energies of 3.8 eV, 4.4 eV and 3.4 eV, respectively, for GaN, AlN and InN.
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Ion implantation in group III-Nitride semiconductors: a tool for doping and defect studies
Journal of Crystal Growth, 1997Co-Authors: J. C. ZolperAbstract:Ion implantation is a flexible process technology for introducing an array of doping or compensating impurities into semiconductors. As the crystal quality of the group III-Nitride Materials continues to improve, ion implantation is playing an enabling role in exploring new dopant species and device structures. In this paper we review the recent developments in ion implantation processing of these Materials with a particular emphasis on how this technology has brought new understanding to this Materials system. In particular, the use of ion implantation to characterize impurity luminescence, doping, and compensation in III-Nitride Materials is reviewed. In addition, we address the nature of implantation induced damage in GaN which demonstrates a very strong resistance to amorphization while at the same time forming damage that is not easily removed by thermal annealing. Finally, we review the coupling of implantation with high temperature rapid thermal annealing to better understand the thermal stability of these Materials and the redistribution properties of the common dopant (Si, O, Be, Mg, Ca, and Zn).
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Implant activation and redistribution of dopants in GaN
Proceedings of 11th International Conference on Ion Implantation Technology, 1996Co-Authors: J. C. Zolper, R. G. Wilson, S. J. Pearton, R.a. StallAbstract:Gallium Nitride (GaN) and related III-Nitride Materials (AlN, InN) have recently been the focus of extensive research for photonic and electronic device applications. As this material system matures, ion implantation doping and isolation is expected to play an important role in advance device demonstrations. To this end, we report the demonstration of implanted p-type doping with /sup 24/Mg+/sup 31/P and /sup 40/Ca as well as n-type doping with Si in GaN. These implanted dopants require annealing /spl sim/1100/spl deg/C to achieve electrical activity, but demonstrate limited redistribution at this temperature. The redistribution of other potential dopants in GaN (such as Be, Zn, and Cd) will also be reported. Results for a GaN junction field effect transistor (JFET), the first GaN device to use implantation doping, will also be presented.
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Ion Implantation and Annealing Studies in III–V Nitrides
MRS Proceedings, 1996Co-Authors: J. C. Zolper, Stephen J. Pearton, James Williams, R. J. Karlicek, Richard A. StallAbstract:Ion implantation doping and isolation has played a critical role in realizing high performance photonic and electronic devices in all mature semiconductor Materials; this is also expected for binary III-Nitride Materials (InN, GaN, AlN) and their alloys as epitaxy improves and more advanced device structures fabricated. This paper reports on recent progress in ion implantation doping of III-Nitride Materials that has led to the first demonstration of a GaN JFET (junction field effect transistor). The JFET was fabricated with all ion implantation doping; in particular, p-type doping of GaN with Ca has been demonstrated with an estimated acceptor ionization energy of 169 meV. O-implantation has also been studied and shown to yield n-type conduction with an ionization energy of {similar_to}29 meV. Neither Ca or O display measurable redistribution during a 1125 C, 15 s activation anneal which sets an upper limit on their diffusivity at this temperature of 2.7{times}10{sup {minus}13}cm{sup 2}/s.
Jae Hyun Ryou - One of the best experts on this subject based on the ideXlab platform.
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actual temperatures of growing surfaces of III Nitride based Materials depending on substrates and forced convection conditions in metal organic chemical vapor deposition
Journal of Applied Physics, 2009Co-Authors: Suk Choi, Jae Hyun Ryou, R.d. DupuisAbstract:We have investigated the differences in the actual surface temperature of various substrates for the growth of III-Nitride Materials and the influence of this difference in the characteristics of the resulting epitaxial films. From calculations using the finite element method, high-thermal conductivity substrates have significantly higher surface temperature than substrates with low thermal conductivity in typical growth conditions of metal organic chemical vapor deposition. Also, the hydrodynamics of various growth parameters and the chamber condition play a significant role in establishing the actual surface temperature. The thickness of the substrate is found to be another important factor on the temperature of the surface. High resolution x-ray diffraction analysis of AlGaN epitaxial layers grown on bulk AlN substrates and sapphire substrates with different thicknesses supports our theoretical calculations, showing that the Al compositional discrepancy originated from the differences in the surface te...
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Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes
Journal of Crystal Growth, 2008Co-Authors: Russell D. Dupuis, Jae Hyun Ryou, Shyh Chiang Shen, P. Douglas Yoder, Suk Choi, Hee-jin Kim, Yun Zhang, Zachary LochnerAbstract:Wide-bandgap III-Nitride-based photodetectors are excellent candidates for high-sensitivity and cost-effective detection of photons in the ultraviolet and near-UV spectral region. Owing to the superior intrinsic properties of III-Nitride Materials for the detection of photons with short wavelengths λ
