The Experts below are selected from a list of 17397 Experts worldwide ranked by ideXlab platform
D C Koutsogeorgis - One of the best experts on this subject based on the ideXlab platform.
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enhanced electrical and optical properties of room temperature deposited aluminium doped zinc oxide azo thin films by excimer Laser Annealing
Optics and Lasers in Engineering, 2016Co-Authors: S El O Hamali, W M Cranton, N Kalfagiannis, Xianghui Hou, R M Ranson, D C KoutsogeorgisAbstract:High quality transparent conductive oxides (TCOs) often require a high thermal budget fabrication process. In this study, Excimer Laser Annealing (ELA) at a wavelength of 248 nm has been explored as a processing mechanism to facilitate low thermal budget fabrication of high quality aluminium doped zinc oxide (AZO) thin films. 180 nm thick AZO films were prepared by radio frequency magnetron sputtering at room temperature on fused silica substrates. The effects of the applied RF power and the sputtering pressure on the outcome of ELA at different Laser energy densities and number of pulses have been investigated. AZO films deposited with no intentional heating at 180 W, and at 2 mTorr of 0.2% oxygen in argon were selected as the optimum as-deposited films in this work, with a resistivity of 1×10−3 Ω.cm, and an average visible transmission of 85%. ELA was found to result in noticeably reduced resistivity of 5×10−4 Ω.cm, and enhancing the average visible transmission to 90% when AZO is processed with 5 pulses at 125 mJ/cm2. Therefore, the combination of RF magnetron sputtering and ELA, both low thermal budget and scalable techniques, can provide a viable fabrication route of high quality AZO films for use as transparent electrodes.
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Laser Annealing of thin film electroluminescent devices deposited at a high rate using high target utilization sputtering
Semiconductor Science and Technology, 2011Co-Authors: Steve Wakeham, M Thwaites, C Tsakonas, W M Cranton, G Boutaud, D C KoutsogeorgisAbstract:This paper presents the photoluminescent (PL) and electroluminescent (EL) characteristics of ZnS:Mn deposited at room temperature using high target utilization sputtering (HiTUS). Significant improvements in PL intensity are seen when ZnS:Mn is deposited using HiTUS instead of conventional RF magnetron sputtering. When incorporated as part of a complete EL device with yttrium oxide forming the dielectric layers and indium tin oxide used as the top contact electrode, localized Laser Annealing of the ZnS:Mn phosphor layer is shown to provide enhancement of the EL characteristics.
Guillermo H Kaufmann - One of the best experts on this subject based on the ideXlab platform.
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residual stress measurement using a radial in plane speckle interferometer and Laser Annealing preliminary results
Optics and Lasers in Engineering, 2004Co-Authors: Matias R Viotti, Ricardo Suterio, Armando Albertazzi, Guillermo H KaufmannAbstract:This paper presents a combined system based on digital speckle pattern interferometry and Laser Annealing to determine residual stresses in ductile materials. The system allows the measurement of the radial in-plane displacement field generated when a specimen subjected to residual stresses is locally heated. This novel approach for measuring residual stresses has the advantage of being nondestructive and can be easily applied to in situ tests. The description of the combined system is followed by the presentation of preliminary results which illustrate the ability of both techniques to quantify residual stress fields and also to determine their principal directions.
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residual stress measurement using a radial in plane speckle interferometer and Laser Annealing preliminary results
Optical Measurement Systems for Industrial Inspection III, 2003Co-Authors: Matias R Viotti, Ricardo Suterio, Armando Albertazzi, Guillermo H KaufmannAbstract:This paper presents a combined system based on digital speckle pattern interferometry and Laser Annealing to determine residual stresses in ductile materials. The system allows the measurement of the radial in-plane displacement field generated when a specimen subjected to residual stresses is locally heated. This novel approach for measuring residual stresses has the advantage of being nondestructive and can be easily applied to in situ tests. The description of the combined system is followed by the presentation of preliminary results which illustrate the ability of both techniques to identify residual stress fields and also to determine their principal directions.
W M Cranton - One of the best experts on this subject based on the ideXlab platform.
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enhanced electrical and optical properties of room temperature deposited aluminium doped zinc oxide azo thin films by excimer Laser Annealing
Optics and Lasers in Engineering, 2016Co-Authors: S El O Hamali, W M Cranton, N Kalfagiannis, Xianghui Hou, R M Ranson, D C KoutsogeorgisAbstract:High quality transparent conductive oxides (TCOs) often require a high thermal budget fabrication process. In this study, Excimer Laser Annealing (ELA) at a wavelength of 248 nm has been explored as a processing mechanism to facilitate low thermal budget fabrication of high quality aluminium doped zinc oxide (AZO) thin films. 180 nm thick AZO films were prepared by radio frequency magnetron sputtering at room temperature on fused silica substrates. The effects of the applied RF power and the sputtering pressure on the outcome of ELA at different Laser energy densities and number of pulses have been investigated. AZO films deposited with no intentional heating at 180 W, and at 2 mTorr of 0.2% oxygen in argon were selected as the optimum as-deposited films in this work, with a resistivity of 1×10−3 Ω.cm, and an average visible transmission of 85%. ELA was found to result in noticeably reduced resistivity of 5×10−4 Ω.cm, and enhancing the average visible transmission to 90% when AZO is processed with 5 pulses at 125 mJ/cm2. Therefore, the combination of RF magnetron sputtering and ELA, both low thermal budget and scalable techniques, can provide a viable fabrication route of high quality AZO films for use as transparent electrodes.
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Laser Annealing of thin film electroluminescent devices deposited at a high rate using high target utilization sputtering
Semiconductor Science and Technology, 2011Co-Authors: Steve Wakeham, M Thwaites, C Tsakonas, W M Cranton, G Boutaud, D C KoutsogeorgisAbstract:This paper presents the photoluminescent (PL) and electroluminescent (EL) characteristics of ZnS:Mn deposited at room temperature using high target utilization sputtering (HiTUS). Significant improvements in PL intensity are seen when ZnS:Mn is deposited using HiTUS instead of conventional RF magnetron sputtering. When incorporated as part of a complete EL device with yttrium oxide forming the dielectric layers and indium tin oxide used as the top contact electrode, localized Laser Annealing of the ZnS:Mn phosphor layer is shown to provide enhancement of the EL characteristics.
K. Huet - One of the best experts on this subject based on the ideXlab platform.
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theoretical study of the Laser Annealing process in finfet structures
Applied Surface Science, 2019Co-Authors: Salvatore Francesco Lombardo, G Fisicaro, A La Magna, Ioannis Deretzis, B Curver, Bobby Lespinasse, K. HuetAbstract:Abstract In this paper we present a computational tool for the simulation of Laser Annealing processes in FinFET structures. This is a complex self-consistent problem, where heating is evaluated by means of the time harmonic solution of the Maxwell equations. The main features of our computational code include: A versatile graphical user interface for the structure design; The assignment of materials and the simulation analysis; An interface with the finite element method solver for the automatic generation of the mesh and the runtime control; Parameters for numerous materials (optical/thermal properties and mass transport) as a function of temperature and phases; An efficient coupling with electromagnetic simulations for the self-consistent source estimate (i.e. the power dissipation) in nanostructured topographies; Experimental validation of nanostructured samples; Multiple-dopant models simulating dopant redistribution, including diffusion solubility and segregation; Alloy model, e.g. SiGe (where the melting point depends on the alloy fraction); Multiple phases (e.g. amorphous, liquid, crystal). As a particular application of the tool we present a study of the Laser process design by varying the Laser fluence, polarization of the electromagnetic field and the pitch of the devices. Results are in excellent agreement with the experiment and could serve as guidelines for the realization of targeted Laser Annealing processes.
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Dopant activation and crystal recovery in arsenic-implanted ultra-thin silicon-on-insulator structures using 308nm nanosecond Laser Annealing
2016 16th International Workshop on Junction Technology (IWJT), 2016Co-Authors: S. Kerdilès, Acosta P. Alba, B. Mathieu, M. Veillerot, R. Kachtouli, P. Besson, H. Denis, F. Mazzamuto, I. Toqué-trésonne, K. HuetAbstract:The different regimes encountered when submitting ultra-thin SOI structures implanted with arsenic to single pulse Laser Annealing with increasing energy density, are identified. It is found that nanosecond UV Laser Annealing can be successfully applied to rebuild a perfect monocrystalline SOI layer and reach arsenic activation levels at least as high as rapid thermal processing, with a reasonably large process window. Thanks to electrical and morphological characterizations, the defective or polycrystalline silicon obtained below the optimum range is evidenced, as well as the loss of monocrystalline nature of the silicon at the upper end of the process window.
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thin wafer silicon igbt with advanced Laser Annealing and sintering process
IEEE Electron Device Letters, 2012Co-Authors: Munaf Rahimo, Chiara Corvasce, J Vobecky, Yoichi Otani, K. HuetAbstract:A novel insulated gate bipolar transistor (IGBT) featuring thin-wafer processing and a combined dopant activation Laser Annealing and contact metal Laser sintering is presented. The device concept includes a new back-side boron anode (collector) activation process by Laser Annealing through a titanium layer to enhance the absorption of the deposited energy from the Laser beam. This technology enables improved activation control of the anode injection efficiency for thin-wafer-based IGBTs rated normally below 1700 V. The IGBT concept will therefore be provided with a wider range of performance options on the loss technology curve when compared to state-of-the-art devices processed with conventional activation techniques.
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excimer Laser Annealing and chemical texturing of zno al sputtered at room temperature for photovoltaic applications
Solar Energy Materials and Solar Cells, 2011Co-Authors: E V Johnson, K. Huet, C Boniface, Patricia Prodhomme, T Emeraud, Roca P I CabarrocasAbstract:Abstract We demonstrate the effect of excimer (XeCl=308 nm) Laser Annealing on thin films of ZnO:Al deposited by RF sputtering at room temperature. The as-deposited films have good sheet resistance ( 2 ) improves the film transparency, particularly through a blue-shift in the band-gap, without significantly impacting the conductivity. More importantly, chemical etching of these Laser annealed films results in textured films with controllable spectral distributions of haze. We demonstrate the enhanced optical properties (transmission and haze) after Laser Annealing and etching the ZnO:Al films through the fabrication of hydrogenated microcrystalline silicon pin solar cells, and show a significant improvement in the photocurrent density (up to 2.2 mA/cm 2 ) for the optimally annealed substrates—particularly at wavelengths greater than 600 nm (up to 1.7 mA/cm 2 ) where light-trapping is important.
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boron and phosphorus dopant activation in germanium using Laser Annealing with and without preamorphization implant
International Conference on Advanced Thermal Processing of Semiconductors, 2009Co-Authors: V Mazzocchi, K. Huet, C Sabatier, C Boniface, J P Barnes, L Hutin, V Delayer, D Morel, M Vinet, Le C RoyerAbstract:In this work, we studied Excimer Laser Annealing at 308 nm with 180 ns pulse duration on Phosphorus and Boron implanted in Germanium, with or without Pre-Amorphization Implant (PAI) and co-implant. Using an industrial tool, experimental results show that we can achieve electrical activation levels up to 1.2×1020 cm−3 for P implant in Ge, which is the highest level regarding the appropriate mobility model. With the B implanted samples, we obtained an electrical activation level higher than 1×1020 cm−3 which is the better results obtained whithout PAI [1]. Melt thresholds were determined to be 0.65 J/cm² in amorphized Germanium (a-Ge) and 0.95 J/cm² in crystalline Germanium (c-Ge). With P, the best activation was obtained after a complete melt of the amorphous layer and the amorphous / crystalline (a/c) interface, necessary to obtain a perfectly recrystallized layer. In the case of B, we found a better activation in the submelt regime compared the melt one, and no contribution on the electrical activation with PAI was observed.
Jin Jang - One of the best experts on this subject based on the ideXlab platform.
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sequential lateral crystallization of amorphous silicon on glass by blue Laser Annealing for high mobility thin film transistors
Thin Solid Films, 2019Co-Authors: Young Hun Jung, Seungpyo Hong, Suhui Lee, Seonghyun Jin, Taewoong Kim, Yeoungjin Chang, Jin JangAbstract:Abstract We report the thickness effect of amorphous silicon for the polycrystalline silicon (poly-Si) layer laterally crystallized by blue Laser Annealing (BLA) using 50 μs melting time. The grain size is much larger and full width at half-maximum of Raman intensity is lower compared to those of the poly-Si by excimer Laser Annealing. It is found that the average width of lateral grain is wider than 3 μm and full width of half maximum of Raman intensity for the BLA poly-Si with an optimum thickness of 90 nm is 3.32 cm−1. The p-type poly-Si thin-film transistor with 90 nm exhibits field-effect mobility of 161.91 ± 6.14 cm2/Vs and subthreshold swing of 227 ± 7 mV/dec.
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lateral grain growth of amorphous silicon films with wide thickness range by blue Laser Annealing and application to high performance poly si tfts
IEEE Electron Device Letters, 2016Co-Authors: Younwoo Choe, Mallory Mativenga, Jin JangAbstract:We report high performance p-type poly-Si thin-film transistors (TFTs) achieved by lateral grain growth of amorphous silicon (a-Si) by using a continuous-wave blue diode Laser of wavelength 445 nm. The blue Laser beam is efficiently absorbed into the a-Si film, such that full melting and lateral crystallization is achieved in all thicknesses investigated, 50–200 nm. TFTs fabricated with 75-, 100-, and 125-nm-thick poly-Si films laterally grown by the blue Laser Annealing exhibited field-effect mobility of 108 ± 7, 104 ± 9, and 134 ± 12 cm2/ $\textrm {V}\cdot \textrm {s}$ , and subthreshold swing of 210±51, 191±16, and 193±53 mV/decade, respectively, and high ON/OFF current ratio of $\sim 10^{8}$ .
