The Experts below are selected from a list of 20757 Experts worldwide ranked by ideXlab platform

Masahiro Numa - One of the best experts on this subject based on the ideXlab platform.

  • an 80 mv to 1 8 v conversion range low energy Level Shifter for extremely low voltage vlsis
    IEEE Transactions on Circuits and Systems I-regular Papers, 2017
    Co-Authors: Ryo Matsuzuka, Tetsuya Hirose, Nobutaka Kuroki, Yuzuru Shizuku, Kyohei Shinonaga, Masahiro Numa
    Abstract:

    We present a low-power and low-energy Level Shifter (LS) circuit that can convert extremely low-voltage input into high-voltage output. The proposed LS consists of a pre-amplifier (pre-AMP) and an output latch. The pre-AMP employs a logic error correction circuit, which generates an operating current for the pre-AMP only when the logic Levels of the input and output do not correspond. The pre-AMP generates complementary amplified signals, and the latch converts them into full-swing outputs. Measurement results demonstrated that the proposed LS fabricated in 0.18- $\mu \text{m}$ CMOS technology was able to convert an extremely low-voltage input of 80 mV into a high-voltage output of 1.8 V. The energy of the proposed LS was 0.35 pJ, when the low supply voltage, high supply voltage, and input pulse frequency were 0.4 V, 1.8 V, and 10 kHz, respectively. The static power dissipation without input was 0.12 nW.

  • a 0 19 v minimum input low energy Level Shifter for extremely low voltage vlsis
    International Symposium on Circuits and Systems, 2015
    Co-Authors: Ryo Matsuzuka, Tetsuya Hirose, Nobutaka Kuroki, Yuzuru Shizuku, Masahiro Numa
    Abstract:

    In this paper, we propose a low-power Level Shifter (LS) capable of converting extremely low-input voltage into highoutput voltage. The proposed LS consists of a pre-amplifier with a logic error correction circuit and an output latch stage. The pre-amplifier generates complementary amplified signals, and the latch stage converts them into full-swing output signals. Simulated results demonstrated that the proposed LS in a 0.18-μm CMOS process can convert a 0.19-V input into 1.8-V output correctly. The energy and the delay time of the proposed LS were 0.24 pJ and 21.4 ns when the low supply voltage, high supply voltage, and the input pulse frequency, were 0.4, 1.8 V, and 100 kHz, respectively.

  • a low power Level Shifter with logic error correction for extremely low voltage digital cmos lsis
    IEEE Journal of Solid-state Circuits, 2012
    Co-Authors: Yuji Osaki, Tetsuya Hirose, Nobutaka Kuroki, Masahiro Numa
    Abstract:

    This paper presents a Level Shifter circuit capable of handling extremely low-voltage inputs. The circuit has a distinctive current generation scheme using a logic error correction circuit that works by detecting the input and output logic Levels. The proposed Level Shifter circuit can convert low-voltage digital input signals into high-voltage digital output signals. The circuit achieves low-power operation because it dissipates operating current only when the input signal changes. Measurement results demonstrated that the circuit can convert a 0.23-V input signal into a 3-V output signal. The power dissipation was 58 nW for a 0.4-V 10-kHz input pulse.

  • a Level Shifter with logic error correction circuit for extremely low voltage digital cmos lsis
    European Solid-State Circuits Conference, 2011
    Co-Authors: Yuji Osaki, Tetsuya Hirose, Nobutaka Kuroki, Masahiro Numa
    Abstract:

    A Level Shifter circuit capable of extremely low-voltage inputs is presented in this paper. The circuit has a distinctive feature in current generation scheme with logic error correction circuit by detecting input and output logic Levels. The proposed circuit can convert low-voltage input digital signals into high-voltage output digital signals. The circuit achieves low-power operation because it dissipates operating current only when the input signals change. Measurement results demonstrated that the circuit can convert low-voltage input signals of 0.4 V into 3 V output signals. The power dissipation was 58 nW at 0.4-V and 10-kHz input pulse.

Minkyu Je - One of the best experts on this subject based on the ideXlab platform.

  • an ultra low voltage Level Shifter using revised wilson current mirror for fast and energy efficient wide range voltage conversion from sub threshold to i o voltage
    IEEE Transactions on Circuits and Systems, 2015
    Co-Authors: Jun Zhou, Chao Wang, Xin Zhang, Minkyu Je
    Abstract:

    This paper presents a novel ultra-low voltage Level Shifter for fast and energy-efficient wide-range voltage conversion from sub-threshold to I/O voltage. By addressing the voltage drop and non-optimal feedback control in a state-of-the-art Level Shifter based on Wilson current mirror, the proposed Level Shifter with revised Wilson current mirror significantly improves the delay and power consumption while achieving a wide voltage conversion range. It also employs mixed-Vt device and device sizing aware of inverse narrow width effect to further improve the delay and power consumption. Measurement results at 0.18 μm show that compared with the Wilson current mirror based Level Shifter, the proposed Level Shifter improves the delay, switching energy and leakage power by up to 3×, 19×, 29× respectively, when converting 0.3 V to a voltage between 0.6 V and 3.3 V. More specifically, it achieves 1.03 (or 1.15) FO4 delay, 39 (or 954) fJ/transition and 160 (or 970) pW leakage power, when converting 0.3 V to 1.8 V (or 3.3 V), which is better than several state-of-the-art Level Shifters for similar range voltage conversion. The measurement results also show that the proposed Level Shifter has good delay scalability with supply voltage scaling and low sensitivity to process and temperature variations.

Jun Zhou - One of the best experts on this subject based on the ideXlab platform.

  • an ultra low voltage Level Shifter using revised wilson current mirror for fast and energy efficient wide range voltage conversion from sub threshold to i o voltage
    IEEE Transactions on Circuits and Systems, 2015
    Co-Authors: Jun Zhou, Chao Wang, Xin Zhang, Minkyu Je
    Abstract:

    This paper presents a novel ultra-low voltage Level Shifter for fast and energy-efficient wide-range voltage conversion from sub-threshold to I/O voltage. By addressing the voltage drop and non-optimal feedback control in a state-of-the-art Level Shifter based on Wilson current mirror, the proposed Level Shifter with revised Wilson current mirror significantly improves the delay and power consumption while achieving a wide voltage conversion range. It also employs mixed-Vt device and device sizing aware of inverse narrow width effect to further improve the delay and power consumption. Measurement results at 0.18 μm show that compared with the Wilson current mirror based Level Shifter, the proposed Level Shifter improves the delay, switching energy and leakage power by up to 3×, 19×, 29× respectively, when converting 0.3 V to a voltage between 0.6 V and 3.3 V. More specifically, it achieves 1.03 (or 1.15) FO4 delay, 39 (or 954) fJ/transition and 160 (or 970) pW leakage power, when converting 0.3 V to 1.8 V (or 3.3 V), which is better than several state-of-the-art Level Shifters for similar range voltage conversion. The measurement results also show that the proposed Level Shifter has good delay scalability with supply voltage scaling and low sensitivity to process and temperature variations.

  • a fast and energy efficient Level Shifter with wide shifting range from sub threshold up to i o voltage
    Asian Solid-State Circuits Conference, 2013
    Co-Authors: Jun Zhou, Chao Wang, Xin Liu, Xin Zhang
    Abstract:

    This paper presents a fast and energy-efficient current mirror based Level Shifter with wide shifting range from sub-threshold voltage up to I/O voltage. Small delay and low power consumption are achieved by addressing the non-full output swing and charge sharing issues in the Level Shifter from [4]. The measurement results show that the proposed Level Shifter can convert from 0.21V up to 3.3V with significantly improved delay and power consumption over the existing Level Shifters. Compared with [4], the maximum reduction of delay, switching energy and leakage power are 3X, 19X, 29X respectively when converting 0.3V to a higher voltage between 0.6V and 3.3V.

M. Ashok Kumar - One of the best experts on this subject based on the ideXlab platform.

  • Design of Level Shifter with Wide Input Voltage Range
    International Journal of Research, 2018
    Co-Authors: P Pydi Reddy, M. Ashok Kumar
    Abstract:

    The Level Shifters are crucial primitives in the multi supply voltage circuits and systems. In this project, a Level Shifter is proposed to achieve the conversion from the sub-threshold voltage to the above threshold voltage for different input voltages.  It is a hybrid structure consisting of the Wilson current mirror and cross- coupled Level Shifter. By addressing the voltage drop issue of the Level Shifter based on the Wilson current mirror, the leakage power is significantly reduced, with the advantage of wide input voltage range for the Wilson current mirror Level Shifter well preserved. In addition, the multi-threshold CMOS (MTCMOS) technology is employed to provide more flexibility for our ultra-low power design. The reporter simulation results using 65nm CMOS process validate our proposed implementation and an ultra-low power consumption of 5.6 uJ per conversion from 0.09 V to 1.2 V at 1MHz is achieved without the need of any intermediate power supply.

Yuanhua Chu - One of the best experts on this subject based on the ideXlab platform.

  • a wide range Level Shifter using a modified wilson current mirror hybrid buffer
    IEEE Transactions on Circuits and Systems, 2014
    Co-Authors: Shienchun Luo, Chingji Huang, Yuanhua Chu
    Abstract:

    Wide-range Level Shifters play critical roles in ultra- low-voltage circuits and systems. Although state-of-the-art Level Shifters can convert a subthreshold voltage to the standard supply voltage, they may have limited operating ranges, which restrict the flexibility of dynamic voltage scaling. Therefore, this paper presents a novel Level Shifter, of which the operating range is from a deep subthreshold voltage to the standard supply voltage and includes upward and downward Level conversion. The proposed Level Shifter is a hybrid structure comprising a modified Wilson current mirror and generic CMOS logic gates. The simulation and measurement results were verified using a 65-nm technology. The minimal operating voltage of the proposed Level Shifter was less than 200 mV based on the measurement results. In addition to the operating range, the delay, power consumption, and duty cycle of the proposed Level Shifter were designed for practical applications.