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Akira Toriumi - One of the best experts on this subject based on the ideXlab platform.
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effect of al diffusion induced positive flatband voltage shift on the electrical characteristics of al incorporated high k Metal oxide semiconductor field effective transistor
Journal of Applied Physics, 2009Co-Authors: Wenwu Wang, Wataru Mizubayashi, Hiroyuki Ota, Toshihide Nabatame, Koji Akiyama, Akira ToriumiAbstract:We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which ar...
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effect of al diffusion induced positive flatband voltage shift on the electrical characteristics of al incorporated high k Metal oxide semiconductor field effective transistor
Journal of Applied Physics, 2009Co-Authors: Wenwu Wang, Wataru Mizubayashi, Hiroyuki Ota, Toshihide Nabatame, Koji Akiyama, Akira ToriumiAbstract:We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which are caused by Al diffusion from HfxAl1−xOy through SiO2 to the SiO2/Si interface. These results indicate that anomalous positive shift in Vfb, i.e., Vfb roll-up, should be taken into consideration in quantitatively adjusting Vfb in thin EOT regions and that it could be used to further tune Vth in p-MOSFETs.We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which ar...
Wenwu Wang - One of the best experts on this subject based on the ideXlab platform.
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effect of al diffusion induced positive flatband voltage shift on the electrical characteristics of al incorporated high k Metal oxide semiconductor field effective transistor
Journal of Applied Physics, 2009Co-Authors: Wenwu Wang, Wataru Mizubayashi, Hiroyuki Ota, Toshihide Nabatame, Koji Akiyama, Akira ToriumiAbstract:We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which ar...
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effect of al diffusion induced positive flatband voltage shift on the electrical characteristics of al incorporated high k Metal oxide semiconductor field effective transistor
Journal of Applied Physics, 2009Co-Authors: Wenwu Wang, Wataru Mizubayashi, Hiroyuki Ota, Toshihide Nabatame, Koji Akiyama, Akira ToriumiAbstract:We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which are caused by Al diffusion from HfxAl1−xOy through SiO2 to the SiO2/Si interface. These results indicate that anomalous positive shift in Vfb, i.e., Vfb roll-up, should be taken into consideration in quantitatively adjusting Vfb in thin EOT regions and that it could be used to further tune Vth in p-MOSFETs.We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which ar...
D.s.h. Chan - One of the best experts on this subject based on the ideXlab platform.
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ultrathin hfo 2 eot 0 75 nm Gate stack with tan hfn Electrodes fabricated using a high temperature process
Electrochemical and Solid State Letters, 2005Co-Authors: J F Kang, M. F. Li, H Y Yu, D.s.h. ChanAbstract:With the continuous scaling of the complementary Metal oxide semiconductor CMOS technology, high-k Gate dielectrics will be needed to replace conventional SiO2 Gate dielectrics for addressing the excessive high leakage concern. 1 HfO2 has been considered as one of the most promising candidates for such applications. 2 Much effort has been made in developing a HfO2 Gate stack with equivalent oxide thickness EOT of less than 1 nm. 3-7 Although the asdeposited HfO2-based Gate dielectrics with Metal Gate Electrode could achieve an EOT 1 nm, a significant increase of both the EOT and the leakage current have been reported after the Gate stack has been subjected to high temperature postMetallization annealing PMA. 3-6 The increase of EOT during PMA has been speculated to be caused by either the reaction at the Metal Gate/HfO2 interface and/or the poor oxygen diffusion barrier of the Metal Gate Electrode. This thermal instability is a major concern for conventional Gatefirst CMOS processing. In this article, we have demonstrated a high-quality HfO2 Gate stack fabricated using NH3-based surface nitridation prior to HfO2 deposition in order to suppress interfacial oxidation at the HfO2/Si interface as well as the HfN Gate Electrode that has been shown to be an excellent oxygen diffusion barrier.
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Lanthanide-incorporated Metal nitrides with tunable work function and good thermal stability for NMOS devices
Digest of Technical Papers. 2005 Symposium on VLSI Technology 2005., 2005Co-Authors: D.s.h. Chan, B.b. Faizhal, Natesan Balasubramanian, A. D. Trigg, M. F. Li, A. Agarwal, D L KwongAbstract:Lanthanide-incorporated Metal nitride (lanthanide-MN/sub x/) is investiGated as a novel n-type Metal Gate Electrode with tunable work function and good thermal stability for the first time. By incorporating lanthanide elements, such as terbium (Tb), erbium (Er), or ytterbium (Yb), into Metal nitride Gates, such as TaN and HfN, the work function of MN/sub x/ can be continuously tuned down to 4.2/spl sim/4.3 eV even after 1000/spl deg/C RTA by varying the lanthanide concentrations. In addition, the lanthanide-MN/sub x/ Gates exhibit good thermal stability up to 1000/spl deg/C on both SiO/sub 2/ and high-k HfAlO. Possible mechanism for the stability of these Metal Gates is also discussed and the results show that the enhancement of the nitrogen content in lanthanide-MN/sub x/ films could be responsible.
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schottky barrier s d mosfets with high k Gate dielectrics and Metal Gate Electrode
IEEE Electron Device Letters, 2004Co-Authors: Shiyang Zhu, D.s.h. Chan, C H Tung, S J Whang, J H Chen, Chen Shen, Chunxiang Zhu, Sungjoo Lee, Won Jong Yoo, J SinghAbstract:This letter presents a low-temperature process to fabricate Schottky-barrier silicide source/drain transistors (SSDTs) with high-/spl kappa/ Gate dielectric and Metal Gate. For p-channel SSDTs (P-SSDT) using PtSi sourece/drain (S/D) , excellent electrical performance of I/sub on//I/sub off//spl sim/10/sup 7/-10/sup 8/ and subthreshold slope of 66 mV/dec have been achieved. For n-channel SSDTs (N-SSDTs) using DySi/sub 2-x/ S/D , I/sub on//I/sub off/ can reach /spl sim/10/sup 5/ at V/sub ds/ of 0.2 V with two subthreshold slopes of 80 and 340 mV/dec. The low-temperature process relaxes the thermal budget of high-/spl kappa/ dielectric and Metal-Gate materials to be used in the future generation CMOS technology.
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effect of surface nh3 anneal on the physical and electrical properties of hfo2 films on ge substrate
Applied Physics Letters, 2004Co-Authors: Qingchun Zhang, D.s.h. Chan, C H Tung, D L Kwong, S J Whang, Chunxiang Zhu, Albert Chin, Chia Chin Yeo, Byung Jin Cho, N BalasubramanianAbstract:Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using Metalorganic-chemical-vapor-deposited HfO2 as the dielectric and TaN as the Metal Gate Electrode. It is demonstrated that a surface annealing step in NH3 ambient before the HfO2 deposition could result in significant improvement in both Gate leakage current and the equivalent oxide thickness (EOT). It was possible to achieve a capacitor with an EOT of 10.5 A and a leakage current of 5.02×10−5 A/cm2 at 1 V Gate bias. X-ray photoelectron spectroscopy analysis indicates the formation of GeON during surface NH3 anneal. The presence of Ge was also detected within the HfO2 films. This may be due to Ge diffusion at the high temperature (∼400 °C) used in the chemical-vapor deposition process.
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low temperature mosfet technology with schottky barrier source drain high k Gate dielectric and Metal Gate Electrode
Solid-state Electronics, 2004Co-Authors: D.s.h. Chan, Shiyang Zhu, J D Chen, S J Whang, J H Chen, Chen Shen, Chunxiang Zhu, Sungjoo Lee, Won Jong YooAbstract:Abstract Both P- and N-channel MOSFETs with Schottky barrier silicide source/drain (S/D), high-K Gate dielectric and Metal Gate were successfully fabricated using a simplified low temperature process. The highest temperature after the high-K dielectric formation is 420 °C. PMOSFETs with PtSi S/D show excellent electrical performance of an Ion/Ioff∼107–108 and a subthreshold slope of 66 mV/dec, similar to those formed by a normal process with an optimized sidewall spacer. NMOSFETs with DySi2−x S/D have ∼3 orders of magnitude larger Ioff than that of PMOSFETs and show two slopes in the subthreshold region, resulting in the Ion/Ioff∼105 at low drain voltage. It can be attributed to the relatively higher barrier height (Φn) of DySi2−x/n-Si than that of PtSi/p-Si (Φp) and the rougher DySi2−x film. Adding a thin intermediate Ge layer (∼1nm) between Dy and Si can improve the film morphology significantly. As a result, the improved performance of N-MOSFET is observed.
Toshihide Nabatame - One of the best experts on this subject based on the ideXlab platform.
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effect of al diffusion induced positive flatband voltage shift on the electrical characteristics of al incorporated high k Metal oxide semiconductor field effective transistor
Journal of Applied Physics, 2009Co-Authors: Wenwu Wang, Wataru Mizubayashi, Hiroyuki Ota, Toshihide Nabatame, Koji Akiyama, Akira ToriumiAbstract:We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which ar...
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effect of al diffusion induced positive flatband voltage shift on the electrical characteristics of al incorporated high k Metal oxide semiconductor field effective transistor
Journal of Applied Physics, 2009Co-Authors: Wenwu Wang, Wataru Mizubayashi, Hiroyuki Ota, Toshihide Nabatame, Koji Akiyama, Akira ToriumiAbstract:We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which are caused by Al diffusion from HfxAl1−xOy through SiO2 to the SiO2/Si interface. These results indicate that anomalous positive shift in Vfb, i.e., Vfb roll-up, should be taken into consideration in quantitatively adjusting Vfb in thin EOT regions and that it could be used to further tune Vth in p-MOSFETs.We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which ar...
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comprehensive study of v fb shift in high k cmos dipole formation fermi level pinning and oxygen vacancy effect
International Electron Devices Meeting, 2007Co-Authors: Yuuichi Kamimuta, K Iwamoto, Y Nunoshige, A Hirano, Wataru Mizubayashi, Y Watanabe, Shinji Migita, A Ogawa, Hiroyuki Ota, Toshihide NabatameAbstract:We have quantitatively investiGated effective work function (Phim,eff) shift, and experimentally demonstrated that high-k/SiO2 dipole and Si-based Gate/high-k contribution are critically important for understanding anomalous VFB shift. Furthermore, we have also found that annealing of Metal/high-k Gate stack in the reduction ambient induces another dipole formation at the high-k/Si02 interface. Finally, by using the AI2O3 and Y2O3 layer as a bottom high-k, the symmetric VTH CMOS is successfully achieved with a single Metal Gate Electrode.
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silicon atom induced fermi level pinning of fully silicided platinum Gates on hfo2 dielectrics
Japanese Journal of Applied Physics, 2005Co-Authors: Masaru Kadoshima, K Iwamoto, Shinji Migita, Koji Akiyama, Nobuyuki Mise, Naoki Yasuda, Koji Tominaga, Minoru Ikeda, Hideki Satake, Toshihide NabatameAbstract:Fully silicided platinum Gates have been proposed as Metal Gate Electrodes for scaled complementary Metal oxide semiconductor field-effect transistors (CMOSFETs). The Pt monosilicide (PtSi) phase was formed on Gate dielectrics by a full silicidation reaction at 400°C. PtSi Gate Electrodes on SiO2 possess a high effective work function of 4.9 eV, which could be used as a possible Metal Gate Electrode for p-MOSFETs, while at the PtSi/HfO2 interface, Fermi-level pinning is observed independent of the PtSi fabrication process. The Fermi-level pinning at the PtSi/HfO2 interface is comparable to that at the poly-Si/HfO2 interface, and Fermi-level pinning does not occur at the Pt/HfO2 interface. These results show that Fermi-level pinning is induced by the presence of silicon atoms at the HfO2 upper interface.
Koji Akiyama - One of the best experts on this subject based on the ideXlab platform.
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effect of al diffusion induced positive flatband voltage shift on the electrical characteristics of al incorporated high k Metal oxide semiconductor field effective transistor
Journal of Applied Physics, 2009Co-Authors: Wenwu Wang, Wataru Mizubayashi, Hiroyuki Ota, Toshihide Nabatame, Koji Akiyama, Akira ToriumiAbstract:We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which are caused by Al diffusion from HfxAl1−xOy through SiO2 to the SiO2/Si interface. These results indicate that anomalous positive shift in Vfb, i.e., Vfb roll-up, should be taken into consideration in quantitatively adjusting Vfb in thin EOT regions and that it could be used to further tune Vth in p-MOSFETs.We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which ar...
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effect of al diffusion induced positive flatband voltage shift on the electrical characteristics of al incorporated high k Metal oxide semiconductor field effective transistor
Journal of Applied Physics, 2009Co-Authors: Wenwu Wang, Wataru Mizubayashi, Hiroyuki Ota, Toshihide Nabatame, Koji Akiyama, Akira ToriumiAbstract:We systematically studied what effect Al diffusion from high-k dielectrics had on the flatband voltage (Vfb) of Al-incorporated high-k Gate stacks. An anomalous positive shift fin Vfb with the decreasing equivalent oxide thickness (EOT) of high-k Gate stacks is reported. As the SiO2 interfacial layer is aggressively thinned in Al-incorporated HfxAl1−xOy Gate stacks with a Metal-Gate Electrode, the Vfb first lies on the well known linear Vfb-EOT plot and deviates toward the positive-voltage direction (Vfb roll-up), followed by shifting toward negative voltage (Vfb roll-off). We demonstrated that the Vfb roll-up behavior remarkably decreases the threshold voltage (Vth) of p-type Metal-oxide-semiconductor field-effect transistors (p-MOSFETs), and does not cause severe degradation in the characteristics of hole mobility. The Vfb roll-up behavior, which is independent of Gate materials but strongly dependent on high-k dielectrics, was ascribed to variations in fixed charges near the SiO2/Si interface, which ar...
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silicon atom induced fermi level pinning of fully silicided platinum Gates on hfo2 dielectrics
Japanese Journal of Applied Physics, 2005Co-Authors: Masaru Kadoshima, K Iwamoto, Shinji Migita, Koji Akiyama, Nobuyuki Mise, Naoki Yasuda, Koji Tominaga, Minoru Ikeda, Hideki Satake, Toshihide NabatameAbstract:Fully silicided platinum Gates have been proposed as Metal Gate Electrodes for scaled complementary Metal oxide semiconductor field-effect transistors (CMOSFETs). The Pt monosilicide (PtSi) phase was formed on Gate dielectrics by a full silicidation reaction at 400°C. PtSi Gate Electrodes on SiO2 possess a high effective work function of 4.9 eV, which could be used as a possible Metal Gate Electrode for p-MOSFETs, while at the PtSi/HfO2 interface, Fermi-level pinning is observed independent of the PtSi fabrication process. The Fermi-level pinning at the PtSi/HfO2 interface is comparable to that at the poly-Si/HfO2 interface, and Fermi-level pinning does not occur at the Pt/HfO2 interface. These results show that Fermi-level pinning is induced by the presence of silicon atoms at the HfO2 upper interface.